JP6366216B2 - Ｔｅｍ画像化用の薄い試料を作製する方法 - Google Patents

Ｔｅｍ画像化用の薄い試料を作製する方法 Download PDF

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JP6366216B2
JP6366216B2 JP2012124150A JP2012124150A JP6366216B2 JP 6366216 B2 JP6366216 B2 JP 6366216B2 JP 2012124150 A JP2012124150 A JP 2012124150A JP 2012124150 A JP2012124150 A JP 2012124150A JP 6366216 B2 JP6366216 B2 JP 6366216B2
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tem
sample surface
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particle beam
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JP2012252004A5 (https=
JP2012252004A (ja
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マイケル・モリアーティ
ステーシー・ストーン
ジェフ・ブラックウッド
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エフ・イ−・アイ・カンパニー
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2873—Cutting or cleaving
    • G01N2001/2886—Laser cutting, e.g. tissue catapult
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2012124150A 2011-06-03 2012-05-31 Ｔｅｍ画像化用の薄い試料を作製する方法 Active JP6366216B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161493308P 2011-06-03 2011-06-03
US61/493,308 2011-06-03

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JP2012252004A JP2012252004A (ja) 2012-12-20
JP2012252004A5 JP2012252004A5 (https=) 2015-07-16
JP6366216B2 true JP6366216B2 (ja) 2018-08-01

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US (2) US8859963B2 (https=)
EP (1) EP2530700B1 (https=)
JP (1) JP6366216B2 (https=)
CN (1) CN102809496B (https=)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8859998B2 (en) 2011-01-28 2014-10-14 Fei Company TEM sample preparation
EP2749863A3 (en) * 2012-12-31 2016-05-04 Fei Company Method for preparing samples for imaging
US8912490B2 (en) 2011-06-03 2014-12-16 Fei Company Method for preparing samples for imaging
WO2013082496A1 (en) 2011-12-01 2013-06-06 Fei Company High throughput tem preparation processes and hardware for backside thinning of cross-sectional view lamella
JP6105204B2 (ja) * 2012-02-10 2017-03-29 株式会社日立ハイテクサイエンス Ｔｅｍ観察用試料作製方法
DE102012202519A1 (de) * 2012-02-17 2013-08-22 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtungen zur Präparation mikroskopischer Proben mit Hilfe von gepulstem Licht
JP6085150B2 (ja) * 2012-03-16 2017-02-22 株式会社日立ハイテクサイエンス 試料作製装置及び試料作製方法
JP5986408B2 (ja) * 2012-03-22 2016-09-06 株式会社日立ハイテクサイエンス 試料作製方法
US10465293B2 (en) 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
CN104685617B (zh) 2012-10-05 2018-11-30 Fei 公司 用于减少带电粒子束样品制备中的幕化的方法和系统
TWI607498B (zh) * 2012-10-05 2017-12-01 Fei公司 使用帶電粒子束曝露樣品中所關注特徵的方法及系統
KR102155834B1 (ko) * 2012-10-05 2020-09-14 에프이아이 컴파니 높은 종횡비 구조 분석
EP2939261B1 (en) * 2012-12-31 2016-08-24 FEI Company Depositing material into high aspect ratio structures
US10325754B2 (en) 2013-01-11 2019-06-18 Fei Company Ion implantation to alter etch rate
CN103940643A (zh) * 2013-01-18 2014-07-23 中芯国际集成电路制造(上海)有限公司 Tsv样品的制备方法
CN103196718B (zh) * 2013-03-14 2015-06-17 上海华力微电子有限公司 Tem样品的制备方法
CN103196728B (zh) * 2013-04-09 2015-12-02 上海华力微电子有限公司 使用fib技术制备sem或tem样品保护层的方法
CN103257066B (zh) * 2013-05-07 2015-05-20 上海华力微电子有限公司 Tem样品的制备方法
CN103308365A (zh) * 2013-06-27 2013-09-18 上海华力微电子有限公司 Tem样品的制备方法
JP6453580B2 (ja) * 2013-08-14 2019-01-16 エフ・イ−・アイ・カンパニー 試料調製中におけるｔｅｍ試料からのプローブの分離
CN103743608B (zh) * 2014-01-21 2016-01-20 东南大学 用于原位透射电子显微镜的深亚微米器件样品及制备方法
US9552958B2 (en) * 2014-02-25 2017-01-24 Weatherford Technology Holdings, Llc Alignment marking for rock sample analysis
CN103868773A (zh) * 2014-03-24 2014-06-18 上海华力微电子有限公司 透射电镜样品的制作方法
CN103868777B (zh) * 2014-03-31 2016-03-02 上海华力微电子有限公司 透射电镜样品的制备方法
US20150369710A1 (en) * 2014-06-24 2015-12-24 Fei Company Method and System of Creating a Symmetrical FIB Deposition
CN105334086A (zh) * 2014-08-13 2016-02-17 中芯国际集成电路制造(上海)有限公司 Tem样品的制备方法及tem样品
KR102358551B1 (ko) * 2014-08-29 2022-02-04 가부시키가이샤 히다치 하이테크 사이언스 자동 시료편 제작 장치
CN105510092B (zh) * 2014-09-22 2019-11-01 中芯国际集成电路制造(上海)有限公司 Tem样品的制备方法
CN105092330B (zh) * 2015-08-12 2017-12-22 上海华力微电子有限公司 一种tem样品制备方法
US9978586B2 (en) * 2015-11-06 2018-05-22 Fei Company Method of material deposition
CN105699139B (zh) * 2016-01-20 2019-04-23 西安电子科技大学 基于反应离子刻蚀的GaN薄膜透射电子显微镜截面样品制备方法
US9837246B1 (en) 2016-07-22 2017-12-05 Fei Company Reinforced sample for transmission electron microscope
KR101737946B1 (ko) 2016-08-16 2017-05-19 서울대학교산학협력단 박막 물성측정 및 분석용 시료 제작 방법 및 이에 의해 제작된 시료
CN107860620B (zh) * 2016-09-22 2020-07-28 中芯国际集成电路制造(上海)有限公司 一种透射电子显微镜样品及其制备方法
CN106814095B (zh) * 2017-02-12 2019-05-24 马新军 用于扫描电镜的冷冻制样装置
US10324049B2 (en) 2017-02-15 2019-06-18 Saudi Arabian Oil Company Rock sample preparation method by using focused ion beam for minimizing curtain effect
JP6974820B2 (ja) * 2017-03-27 2021-12-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工方法
US10546719B2 (en) * 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
DE102017212020B3 (de) 2017-07-13 2018-05-30 Carl Zeiss Microscopy Gmbh Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe
CN108036979B (zh) * 2017-11-15 2018-12-21 中国科学院地质与地球物理研究所 基于静电力的矿物样品靶及其制作方法
KR102537699B1 (ko) 2017-12-26 2023-05-26 삼성전자주식회사 반도체 장치의 검사 방법
CN110530700B (zh) * 2019-10-14 2022-04-12 长江存储科技有限责任公司 采用fib制备测试样品的方法以及测试样品
CN111366428B (zh) * 2020-03-03 2023-06-09 上海华力集成电路制造有限公司 Fib倒切制备tem样品的方法
US11069509B1 (en) * 2020-03-16 2021-07-20 Fei Company Method and system for backside planar view lamella preparation
CN113834831B (zh) * 2020-06-08 2023-07-21 全德科技(厦门)有限公司 制备透射电子显微镜样品的方法
WO2022016502A1 (en) 2020-07-24 2022-01-27 Yangtze Memory Technologies Co., Ltd. Method of preparing and analyzing thin films
CN113588372B (zh) * 2021-08-13 2022-09-02 胜科纳米(苏州)股份有限公司 测量vcsel器件多层膜元素扩散的样品制备方法以及检测方法
CN114964969B (zh) * 2022-05-26 2024-10-08 中国工程物理研究院核物理与化学研究所 一种百微米级透射电镜样品的制备方法
CN115078431B (zh) * 2022-06-16 2025-01-21 中国核动力研究设计院 一种基于自离子辐照后锆合金透射电镜试样制备方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1158033A (ja) 1997-08-26 1999-03-02 Nippon Telegr & Teleph Corp <Ntt> イオンミリング方法
US6042736A (en) 1997-11-17 2000-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preparing samples for microscopic examination
US6039000A (en) 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
JP2000035391A (ja) * 1998-07-16 2000-02-02 Seiko Instruments Inc 薄片化加工時の試料歪除去方法
US6753538B2 (en) * 2001-07-27 2004-06-22 Fei Company Electron beam processing
JP3735614B2 (ja) 2003-03-19 2006-01-18 株式会社東芝 透過電子顕微鏡観測用下地試料、透過電子顕微鏡測定方法、および透過電子顕微鏡装置
US7611610B2 (en) * 2003-11-18 2009-11-03 Fei Company Method and apparatus for controlling topographical variation on a milled cross-section of a structure
US7442924B2 (en) * 2005-02-23 2008-10-28 Fei, Company Repetitive circumferential milling for sample preparation
JP2007092507A (ja) 2005-09-05 2007-04-12 Hitachi Zosen Corp ジェットフローゲート
JP4947965B2 (ja) * 2005-12-06 2012-06-06 ラピスセミコンダクタ株式会社 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造
JP5600371B2 (ja) 2006-02-15 2014-10-01 エフ・イ−・アイ・カンパニー 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング
JP2007292507A (ja) 2006-04-21 2007-11-08 Matsushita Electric Ind Co Ltd 透過型電子顕微鏡の試料作製方法および集束イオンビーム装置
US7423263B2 (en) * 2006-06-23 2008-09-09 Fei Company Planar view sample preparation
US8455821B2 (en) 2006-10-20 2013-06-04 Fei Company Method for S/TEM sample analysis
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
EP2109873B1 (en) * 2007-02-06 2017-04-05 FEI Company High pressure charged particle beam system
US8835845B2 (en) 2007-06-01 2014-09-16 Fei Company In-situ STEM sample preparation
EP2009421A1 (en) 2007-06-29 2008-12-31 FEI Company Method for separating a lamella for TEM inspection from a core sample
JP5017059B2 (ja) * 2007-10-29 2012-09-05 エスアイアイ・ナノテクノロジー株式会社 試料作成装置および試料姿勢転換方法
JP2009198412A (ja) 2008-02-25 2009-09-03 Sii Nanotechnology Inc 透過電子顕微鏡用試料の作製方法及び透過電子顕微鏡用試料
US8278220B2 (en) * 2008-08-08 2012-10-02 Fei Company Method to direct pattern metals on a substrate
CN101776543A (zh) * 2009-01-13 2010-07-14 中芯国际集成电路制造(上海)有限公司 透射电子显微镜检测样片的制备方法
US8778804B2 (en) * 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
EP2226830B1 (en) * 2009-03-06 2014-01-08 FEI Company Charged particle beam processing
EP2233907A1 (en) * 2009-03-27 2010-09-29 FEI Company Forming an image while milling a work piece
JP5650234B2 (ja) * 2009-11-16 2015-01-07 エフ・イ−・アイ・カンパニー ビーム処理システムに対するガス送達
EP2402475A1 (en) * 2010-06-30 2012-01-04 Fei Company Beam-induced deposition at cryogenic temperatures
US8859998B2 (en) 2011-01-28 2014-10-14 Fei Company TEM sample preparation

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Publication number Publication date
US20150102009A1 (en) 2015-04-16
US20130143412A1 (en) 2013-06-06
US9279752B2 (en) 2016-03-08
CN102809496B (zh) 2016-09-07
EP2530700B1 (en) 2017-03-01
EP2530700A3 (en) 2014-02-26
CN102809496A (zh) 2012-12-05
EP2530700A2 (en) 2012-12-05
US8859963B2 (en) 2014-10-14
JP2012252004A (ja) 2012-12-20

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