JP6351211B2 - 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造 - Google Patents

亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造 Download PDF

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Publication number
JP6351211B2
JP6351211B2 JP2013101464A JP2013101464A JP6351211B2 JP 6351211 B2 JP6351211 B2 JP 6351211B2 JP 2013101464 A JP2013101464 A JP 2013101464A JP 2013101464 A JP2013101464 A JP 2013101464A JP 6351211 B2 JP6351211 B2 JP 6351211B2
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Japan
Prior art keywords
zinc
layer
wafer
bonding
zinc oxide
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JP2013101464A
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Japanese (ja)
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JP2013243360A (ja
JP2013243360A5 (enExample
Inventor
ロビン エル． ウー，
ロビン エル． ウー，
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Boeing Co
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Boeing Co
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Publication of JP2013243360A5 publication Critical patent/JP2013243360A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31536—Including interfacial reaction product of adjacent layers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2013101464A 2012-05-14 2013-05-13 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造 Expired - Fee Related JP6351211B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/471,306 US9105561B2 (en) 2012-05-14 2012-05-14 Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide
US13/471,306 2012-05-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018031600A Division JP2018093222A (ja) 2012-05-14 2018-02-26 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造

Publications (3)

Publication Number Publication Date
JP2013243360A JP2013243360A (ja) 2013-12-05
JP2013243360A5 JP2013243360A5 (enExample) 2016-06-02
JP6351211B2 true JP6351211B2 (ja) 2018-07-04

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013101464A Expired - Fee Related JP6351211B2 (ja) 2012-05-14 2013-05-13 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造
JP2018031600A Pending JP2018093222A (ja) 2012-05-14 2018-02-26 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造

Family Applications After (1)

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JP2018031600A Pending JP2018093222A (ja) 2012-05-14 2018-02-26 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造

Country Status (5)

Country Link
US (2) US9105561B2 (enExample)
EP (1) EP2665088B1 (enExample)
JP (2) JP6351211B2 (enExample)
KR (1) KR102082009B1 (enExample)
CN (1) CN103426725B (enExample)

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DE102015111040A1 (de) * 2015-07-08 2017-01-12 Osram Opto Semiconductors Gmbh Verfahren zum Verbinden von zumindest zwei Komponenten
DE112019006574T5 (de) * 2019-01-07 2021-10-28 Sony Group Corporation Strukturkörper, strukturkörperherstellungsverfahren und elektronisches gerät
CN110739285A (zh) * 2019-10-30 2020-01-31 北京工业大学 硅基金属中间层化合物半导体晶圆的结构及制备方法
FR3117666B1 (fr) * 2020-12-15 2022-10-28 Commissariat Energie Atomique Procede de fabrication d’une structure semi-conductrice comprenant une zone d’interface incluant des agglomerats

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Also Published As

Publication number Publication date
CN103426725A (zh) 2013-12-04
US20150303316A1 (en) 2015-10-22
EP2665088A2 (en) 2013-11-20
US20130302622A1 (en) 2013-11-14
JP2013243360A (ja) 2013-12-05
EP2665088B1 (en) 2021-06-02
US9105561B2 (en) 2015-08-11
CN103426725B (zh) 2017-10-27
KR102082009B1 (ko) 2020-02-26
KR20130127361A (ko) 2013-11-22
JP2018093222A (ja) 2018-06-14
EP2665088A3 (en) 2014-06-04
US9978893B2 (en) 2018-05-22

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