KR102082009B1 - 아연 금속과 아연 과산화물의 반응성 결합으로 형성된 층상 결합 구조물 - Google Patents

아연 금속과 아연 과산화물의 반응성 결합으로 형성된 층상 결합 구조물 Download PDF

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KR102082009B1
KR102082009B1 KR1020130022804A KR20130022804A KR102082009B1 KR 102082009 B1 KR102082009 B1 KR 102082009B1 KR 1020130022804 A KR1020130022804 A KR 1020130022804A KR 20130022804 A KR20130022804 A KR 20130022804A KR 102082009 B1 KR102082009 B1 KR 102082009B1
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South Korea
Prior art keywords
zinc
structures
layer
zinc oxide
layered
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KR20130127361A (ko
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로빈 엘. 우
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더 보잉 컴파니
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31536—Including interfacial reaction product of adjacent layers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020130022804A 2012-05-14 2013-03-04 아연 금속과 아연 과산화물의 반응성 결합으로 형성된 층상 결합 구조물 Expired - Fee Related KR102082009B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/471,306 US9105561B2 (en) 2012-05-14 2012-05-14 Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide
US13/471,306 2012-05-14

Publications (2)

Publication Number Publication Date
KR20130127361A KR20130127361A (ko) 2013-11-22
KR102082009B1 true KR102082009B1 (ko) 2020-02-26

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KR1020130022804A Expired - Fee Related KR102082009B1 (ko) 2012-05-14 2013-03-04 아연 금속과 아연 과산화물의 반응성 결합으로 형성된 층상 결합 구조물

Country Status (5)

Country Link
US (2) US9105561B2 (enExample)
EP (1) EP2665088B1 (enExample)
JP (2) JP6351211B2 (enExample)
KR (1) KR102082009B1 (enExample)
CN (1) CN103426725B (enExample)

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DE102015111040A1 (de) * 2015-07-08 2017-01-12 Osram Opto Semiconductors Gmbh Verfahren zum Verbinden von zumindest zwei Komponenten
DE112019006574T5 (de) * 2019-01-07 2021-10-28 Sony Group Corporation Strukturkörper, strukturkörperherstellungsverfahren und elektronisches gerät
CN110739285A (zh) * 2019-10-30 2020-01-31 北京工业大学 硅基金属中间层化合物半导体晶圆的结构及制备方法
FR3117666B1 (fr) * 2020-12-15 2022-10-28 Commissariat Energie Atomique Procede de fabrication d’une structure semi-conductrice comprenant une zone d’interface incluant des agglomerats

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US20020048900A1 (en) * 1999-11-23 2002-04-25 Nova Crystals, Inc. Method for joining wafers at a low temperature and low stress

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Also Published As

Publication number Publication date
CN103426725A (zh) 2013-12-04
US20150303316A1 (en) 2015-10-22
EP2665088A2 (en) 2013-11-20
US20130302622A1 (en) 2013-11-14
JP2013243360A (ja) 2013-12-05
EP2665088B1 (en) 2021-06-02
US9105561B2 (en) 2015-08-11
CN103426725B (zh) 2017-10-27
JP6351211B2 (ja) 2018-07-04
KR20130127361A (ko) 2013-11-22
JP2018093222A (ja) 2018-06-14
EP2665088A3 (en) 2014-06-04
US9978893B2 (en) 2018-05-22

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