CN101667528A - 用于三维ic互连的衬底对衬底键合装置和方法 - Google Patents

用于三维ic互连的衬底对衬底键合装置和方法 Download PDF

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CN101667528A
CN101667528A CN200910170208A CN200910170208A CN101667528A CN 101667528 A CN101667528 A CN 101667528A CN 200910170208 A CN200910170208 A CN 200910170208A CN 200910170208 A CN200910170208 A CN 200910170208A CN 101667528 A CN101667528 A CN 101667528A
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substrate
bonding
group
metal gasket
supplemental support
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余振华
邱文智
吴文进
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明公开了一种用于三维IC互连的衬底对衬底键合装置和方法。本发明的装置包括键合头、辅助支撑、还原模件和变换器。键合头抓住第一衬底，所述第一衬底包括第一金属衬垫组。辅助支撑抓住第二衬底，所述第二衬底包括第二金属衬垫组。对准器通过将所述第一金属衬垫组与第二金属衬垫组对准形成对准的金属衬垫组。还原模件容纳所述对准的金属衬垫组，且还原性气体流入所述还原模件。所述变换器提供对所述对准的金属衬垫组的重复的相关运动。

Description

用于三维IC互连的衬底对衬底键合装置和方法
技术领域
本发明涉及用于三维(3D)互连的衬底对衬底键合装置和方法，而且，具体地涉及直接金属键合的装置和方法。
背景技术
随着缩小半导体器件的成本不断增加，探索了可选择的方法，例如将电路集成扩展至三维或半导体衬底堆叠。将两个或更多衬底键合在一起以形成三维结构。对于这些结构已应用了多种键合工艺。
粘合键合和电介质熔合键合是将电介质层键合在一起的键合工艺。在键合后需要进一步地工艺步骤的工艺中通常采用粘合键合和电介质熔合键合，例如穿透通孔刻蚀工艺。另一种键合的方法是传统直接金属键合，其将一个衬底的金属键合至另一衬底的金属。许多传统直接金属键合方案采用焊球。
传统的直接金属键合在包含低k值电介质的结构上采用以铜到铜进行键合时，可能会引起结构和电性问题。随着半导体芯片不断缩小，金属层之间的绝缘电介质已很薄以至于电荷积累和串扰会不利地影响器件性能。用相同厚度的低k值电介质替换二氧化硅或类似电介质以减少寄生电容，能够加快切换速度和降低热消耗。然而，低k值材料通常为多孔材料，其可能没有传统电介质一样机械地强壮。
在传统的金属到金属的直接键合中，可采用额外的对离子体预处理工艺以从衬底金属键合衬垫的金属表面去除表面氧化物，相对比的是，在传统工艺中发现的侵蚀较少的等离子体预处理。接着衬底被传送至键合工具。在传送衬底的过程中，金属键合衬垫被暴露在空气中。表面氧化物和污染可开始聚集在衬底的金属表面上。此外，在传统键合工具中，金属键合衬垫被暴露在空气中。传统键合工具可需要高温例如400℃以进行3D IC键合。在采用超声波键合时，键合工具也可施加高达几个psi的压力至衬底。
传统直接金属到金属键合的缺点是额外的等离子体预处理可损伤器件或低k值材料。而且，传统键合的相对高温也可损伤低k值材料。损伤的低k值材料可具有较高的电介质常数，且因此导致3D器件的较高的RC延迟。
传统直接金属键合的另一缺点是金属衬垫的表面在焊球工艺中可具有分隔彼此的间隙，其具有约20-40μm的厚度。在已知的直接焊料键合工艺中，键合环境是在暴露在空气中的，因此金属衬垫或焊料在空气中被再次氧化。接着将每一个衬底上的金属键合衬垫键合，它们之间会存在上述再氧化层。这个氧化物和/或污染层可能是多孔的，湿气可能接着会侵蚀金属衬垫，引起器件的可靠性问题。
发明内容
通过用于三维互连的衬底对衬底直接键合(其采用在原位还原模件)的方法和装置，总地解决或克服了这些和其他问题，并一般地得到技术效果。
根据实例性的实施例，本发明提供的装置包括键合头、辅助支撑、还原模件和变换器。键合头抓住第一衬底，第一衬底包括第一金属衬垫组。辅助支撑抓住第二衬底，第二衬底包括第二金属衬垫组。对准器通过将所述第一金属衬垫组与第二金属衬垫组对准而形成对准的金属衬垫组。还原模件容纳所述对准的金属衬垫组，且还原性气体流入所述还原模件。所述变换器提供对所述对准的金属衬垫组的重复的相关运动。
该实施例的一个优点是，键合装置可需要低于等离子体预处理的传统工艺的键合温度，在等离子体预处理之后被传送至传统键合工具。进一步地，由于没有进行等离子体预处理，因此也没有侵蚀。没有损伤低k值材料，从而将改善RC延迟时间。而且，其他优点是由于低温减少了工艺时间。
额外的优点是键合金属衬垫的结果的两个衬底的间隙被减小至小于约5μm，优选地小于约1μm。将间隙减小至小于5μm的好处是减小渗入间隙材料和侵蚀金属衬垫的潮气。进一步地，较薄的间隙可消除进一步处理键合的衬底的复杂度。
前述宽泛的略述了示意性实施例的特征和技术优点，这是为了可对本发明之后详细描述的内容有更好的理解。将在此后详细描述示意性实施例额外的特征和优点，这将形成本发明权利要求的主题。本领域技术人员应该明白的是：可轻易以在此所揭示的内容和具体实施例为基础，修改或设计其他结构或工艺以实现与本发明相同的目的。本领域技术人员也应当意识到不脱离该示意性实施例的思想和范围的类似等同结构也应包含在权利要求中。
附图说明
参照结合附图的下列描述可对本发明说明性的实施例及其优点有更清楚的理解，其中：
图1为根据说明性实施例通过直接金属键合工艺形成的三维互连的剖面图；
图2为根据说明性实施例用于三维互连的衬底对衬底键合的方法流程图；
图3为根据说明性实施例用于晶圆键合三维互连的装置的选择部件图；
图4为根据说明性实施例原位还原模件的侧视图；
图5为根据说明性实施例原位还原模件的俯视图；
除非有特殊说明，否则不同附图中对应的标号和数字通常指对应的部件。绘制附图是为了清楚地说明优选实施例的相关方面，因此没必要按比例绘制。
具体实施方式
以下将详细讨论本发明优选实施例的实现和使用。然而，应该明白示意性实施例提供了许多可应用的发明构思，这些发明构思可通过宽的各种具体内容实现。讨论的具体实施例仅是说明实现和使用本发明的具体方式，并不是限制本发明的范围。
示意性实施例的优点是示意性实施例提供了3D IC，其少或无低k值损伤，且在第一和第二衬底之间具有小间隙厚度。根据示意性实施例，该间隙可在约1μm至5μm之间。
图1为通过直接金属键合工艺形成的三维半导体集成电路(3D IC)互连的剖面图。在这个例子中，第一衬底102可包括可与三维互连结构键合的半导体晶圆、半导体管芯、其他衬底、倒装芯片、多衬底层等。第二衬底104可包括可与三维互连结构键合的半导体晶圆、半导体管芯、其他衬底、倒装芯片、多衬底层等。第一衬底102和第二衬底104可以由相同的材料构成，或由不同的材料构成。进一步地，第一衬底102和第二衬底104可包括半导体晶圆、半导体管芯、其他衬底、倒装芯片、多衬底层等的任意组合。无论第一衬底102、第二衬底104或两者均可包括一层或多层低k值电介质，因此易受高温、高压和侵蚀性等离子体工艺的影响。
第一衬底102包括第一金属衬垫106。第二衬底104包括第二金属衬垫108。本发明实施例可包括多个第一和第二金属衬垫。金属衬垫可包括Cu、Sn、Au、In、Al、其他金属、合金等。间隙110包括第一衬底102和第二衬底104之间的间隙。间隙110的厚度“t”包括第一衬底102和第二衬底104之间的距离。间隙110的厚度“t”还包括第一金属衬垫106和第二金属衬垫108之间的金属氧化物和污染物层。根据一个实施例，间隙110的厚度“t”可小于约5μm。在优选实施例中，间隙110的厚度“t”可小于约1μm。
图2为根据示意性实施例用于三维互连的直接金属键合方法的流程图。该工艺由将第一衬底(如图1中的第一衬底102)装载至键合头中(步骤202)开始。将第二衬底(如图1中的第二衬底104)装载至辅助支撑中(步骤204)。第一和第二衬底均具有至少一个金属键合衬垫。例如可通过手动或采用自动传输装置(其可包括管芯捡起保持系统，也可不包括)装载第一和第二衬底。
对在第一和第二衬底上将被键合的金属衬垫进行对准(步骤206)。可在第一和第二衬底之间设置对准系统。将衬底对准后，可将该对准系统从衬底之间移走。各种方式的对准系统已为本领域所知，在此不再进一步讨论。
然后，使第一衬底相对于第二衬底水平(步骤208)。该工艺确保衬底相互之间的倾斜被消除或被最小化。
在整个键合工艺过程中衬底被配置在还原模件中(步骤210)。该还原模件可在空气中，或在真空条件下。优选地，该还原模件被放置在约1-2torr(乇)的真空条件中。
还原性气体流入还原模件(步骤212)。随着还原性气体的流入，可能在金属衬垫上形成的金属氧化物被基本去除，从而允许直接的金属对金属内部的扩散。该还原性气体可为N2+H2、Ar+H2、He+H2、H2、HCOOH等。
可选择地，水平器可引起压力，该压力通过键合头被施压至对准的衬底(步骤214)。该压力可在1-100psi(磅/平方英寸)之间。更高的压力可能损伤在一个或两个衬底中的低k值电介质。
而且，键合头、辅助支撑、和/或两者可使对准的衬底被加热，优选地在均匀的温度被加热(步骤216)。在这个可选择的工艺中提供的温度将典型低小于传统键合工具中的温度。该温度优选地在约室温至400℃之间。更高的温度可能损伤一个或两个衬底中的低k值电介质。
使用超声运动(步骤218)。可通过键合头、通过辅助支撑，或通过键合头和辅助支撑两者，使用该超声运动。当键合头和辅助支撑中的一个或两者提供超声运动时，其被称为“相关装置”。在重要的对准工艺中，应用的实施例中，键合头和辅助支撑中任一个支持超声运动。然而在许多工艺中，目标对准精度可大于3μm。因此在目标金属衬底对准中有较多的宽容度，实施例可采用相关装置。
在整个键合工艺中对准的衬底保持在还原模件中。在键合工艺之后，将衬底从还原模件中移走。该方法的优点是衬底和对准的衬底的金属衬垫之间间隙的厚度，例如图1中的间隙10，可明显小于现有技术工艺。
图3为用于键合三维互连的装置的示意性实施例。键合装置300的选择部件为键合头302、辅助支撑304、对准器306、水平器308、变换器310、还原模件312，和控制单元314。该配置为示例的配置。例如，在图3中，显示的键合头302和辅助支撑304是键合头在顶部，辅助支撑在键合头302之下。然而，在另一个实施例中，在键合装置300中键合头和辅助支撑可在其他位置。本领域技术人员将明白实施例中示例性的配置可被改变。
键合头302抓住第一衬底，例如图1中的第一衬底102。可配置键合头302使其抓住半导体晶片、半导体晶片的一部份、半导体管芯、其他衬底、倒装芯片、多衬底层等。可配置键合头302具有加热能力以对对准的衬底加热。进一步地，变换器310可引起键合头302对对准的衬底进行超声运动。
水平器308与键合头302相连。水平器308包括水平系统，其将第一衬底相对于第二衬底水平。在3D IC互连中水平非常重要，以使最终结构具有平坦表面。进一步地，可配置水平器308以在对准的衬底上施加压力。在示意性实施例中，优选地，可配置水平器308在对准的衬底上施加在约1-100psi之间的压力。
可配置辅助支撑304使其具有类似于键合头302的作用。辅助支撑304抓住第二衬底，例如图1中的第二衬底104。可配置辅助支撑304以抓住半导体晶片、半导体晶片的一部份、半导体管芯、其他衬底、倒装芯片、多衬底层、管芯拾取保持系统等。可配置辅助支撑304具有加热能力以对对准的衬底加热。进一步地，变换器310可引起辅助支撑304对对准的衬底进行超声运动。可在辅助支撑中引入加热。优选地，加热在约室温至400℃。
在键合装置300中，变换器310引起在第一衬底与第二衬底之间的超声运动。在实施例中，通过键合头302和辅助支撑304可产生反复的相关运动。
键合装置300还包括控制单元314。可配置控制单元314以控制键合装置300的多个方面，包括衬底的装载和卸载、衬底水平、温度、压力、真空、和超声参数。控制单元314可包括多种微控制器等。
在还原模件312中将对准的衬底316和318密封，将还原性气体引至对准的金属衬垫322。还原模件312可在空气压力下或在空气被耗尽的真空条件下工作。优选地，还原模件312在约1-3torr的真空条件中。
图4示出了还原模件的更多细节。还原模件400为类似于图3的还原模件312的还原模件。原位还原模件可具有包围所述第一衬底和第二衬底的任何形状。在此所示的，还原模件400为“罐头形状”。所示的第一衬底402和第二衬底404完全被还原模件400所包围。在其他实施例中，至少金属衬垫406和408完全被还原模件400所包围。所示的还原模件400具有环绕该模件的两行气体入口洞。
图5示出了还原模件的俯视图，例如图3中的还原模件312。气体入口洞502围绕还原模件500。还原性气体流入(箭头504所指的)还原模件500浸没了对准的衬底(未示出)。还原性气体耗尽或消除金属衬垫表面上的金属氧化物。还原性气体化学反应的方式见下述例子，该例子以Cu金属键合衬垫和还原性气体H2+N2为例。空气中的氧气与金属键合衬垫的Cu表面混合，形成金属氧化物(Cu+O2＝CuO2)。还原性气体H2+N2被引入到金属表面，且Cu O2中的O与还原性气体中的H2混合形成H2O，从Cu表面耗尽了金属氧化物((Cu+(还原性气体H2+N2)＝Cu+H2O))。因此，清洁的Cu表面可键合(Cu+Cu可内部扩散→直接键合)。
然而，本申请的范围并不仅限于在说明书中描述的工艺、机械、制造、物质构成、手段、方法和步骤的实施例。正如本领域技术人员所能理解的，从本发明所揭露的工艺、机械、制造、物质构成、手段、方法或步骤、当前存在的或今后发展的，与本发明在此所描述相应实施例，执行基本相同的功能或得到基本相同的结果的，根据本发明这些均可使用。因此，以下权利要求可包括例如工艺、机械、制造、物质构成、手段、方法或步骤的范围。

Claims (15)

1、一种装置，包括：
键合头，其被配置用于抓住包含第一金属衬垫组的第一衬底；
辅助支撑，其被配置用于抓住包含第二金属衬垫组的第二衬底；
对准器，其被配置用于将所述第一金属衬垫组与第二金属衬垫组对准，从而形成对准的金属衬垫组；
还原模件，其被配置用于容纳所述对准的金属衬垫组，且其中所述还原模件被配置用于接收还原性气体；
变换器，其被配置用于提供对所述对准的金属衬垫组的重复的相关运动。
2、如权利要求1所述的装置，其中还包括：
水平器，其被配置为将所述第一衬底相对于所述第二衬底水平，其中优选地，所述水平器被配置为在所述对准的金属衬垫组上施加约0-100psi之间的压力。
3、如权利要求1所述的装置，其中，所述键合头和/或所述辅助支撑被配置为对所述对准的金属衬垫组加热，所述加热温度小于或等于400℃。
4、如权利要求1所述的装置，其中，所述重复的相关运动为超声运动，所述超声运动被施加在所述键合头和所述辅助支撑中的一个，或在所述键合头和所述辅助支撑两个上均应用。
5、如权利要求1所述的装置，其中，在键合期间所述第一衬底和所述第二衬底为所述还原模件完全容纳，其中优选地，所述还原性气体从由N2+H2、Ar+H2、He+H2、H2、HCOOH组成的组中选择。
6、如权利要求1所述的装置，其中，所述键合头被配置为抓住半导体晶片、半导体晶片的一部份、或管芯作为所述第一衬底，且其中所述辅助支撑被配置以抓住半导体晶片、半导体晶片的一部份、或管芯作为所述第二衬底。
7、如权利要求1所述的装置，其中，所述还原模件被配置为得到1-3torr的真空条件。
8、如权利要求1所述的装置，其中，所得到的键合的第一金属衬垫和第二金属衬垫的两个衬底之间的间隙小于约5μm。
9、一种三维互连键合的方法，该方法包括：
将具有第一键合衬垫组的第一衬底与具有第二键合衬垫组的第二衬底对准，从而形成对准的键合衬垫；
将所述第一键合衬垫组与所述第二键合衬垫组连接；和
在所述第一键合衬垫组和所述第二键合衬垫组之间施加重复的相关运动以形成键合。
10、如权利要求9所述的方法，其中还包括：
将所述第一衬底相对于所述第二衬底水平。
11、如权利要求9所述的方法，其中，施加在所述对准的金属衬垫组上的压力小于100psi。
12、如权利要求9所述的方法，其中还包括：
为所述还原模件提供真空环境，其中优选地，所述还原性气体从由N2+H2、Ar+H2、He+H2、H2、HCOOH组成的组中选择。
13、如权利要求9所述的方法，其中还包括：
为所述对准的键合衬底施加不超过400℃的温度。
14、如权利要求9所述的方法，其中，所述重复的相关运动为超声运动，所述超声运动被应用在所述键合头和所述辅助支撑中的一个上，或在所述键合头和所述辅助支撑两个上均应用，且其中，所得到的键合的衬底包括至少一低k值层。
15、如权利要求9所述的方法，其中，所述第一衬底和所述第二衬底之间最终的间隙基本小于5μm。
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