CN109273472A - Bsi图像传感器及其形成方法 - Google Patents
Bsi图像传感器及其形成方法 Download PDFInfo
- Publication number
- CN109273472A CN109273472A CN201811108922.9A CN201811108922A CN109273472A CN 109273472 A CN109273472 A CN 109273472A CN 201811108922 A CN201811108922 A CN 201811108922A CN 109273472 A CN109273472 A CN 109273472A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 32
- 235000012431 wafers Nutrition 0.000 claims abstract description 151
- 238000005520 cutting process Methods 0.000 claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 39
- 239000011248 coating agent Substances 0.000 claims description 44
- 238000000576 coating method Methods 0.000 claims description 44
- 150000004767 nitrides Chemical class 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000003475 lamination Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims 4
- 229910052906 cristobalite Inorganic materials 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- 229910052682 stishovite Inorganic materials 0.000 claims 4
- 229910052905 tridymite Inorganic materials 0.000 claims 4
- 229910018557 Si O Inorganic materials 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- 239000000306 component Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910006283 Si—O—H Inorganic materials 0.000 description 7
- 239000005416 organic matter Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 229910001868 water Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811108922.9A CN109273472B (zh) | 2018-09-21 | 2018-09-21 | Bsi图像传感器及其形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811108922.9A CN109273472B (zh) | 2018-09-21 | 2018-09-21 | Bsi图像传感器及其形成方法 |
Publications (2)
Publication Number | Publication Date |
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CN109273472A true CN109273472A (zh) | 2019-01-25 |
CN109273472B CN109273472B (zh) | 2021-01-22 |
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Family Applications (1)
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CN201811108922.9A Active CN109273472B (zh) | 2018-09-21 | 2018-09-21 | Bsi图像传感器及其形成方法 |
Country Status (1)
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CN (1) | CN109273472B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265421A (zh) * | 2019-08-06 | 2019-09-20 | 德淮半导体有限公司 | 半导体结构的形成方法 |
CN117855240A (zh) * | 2024-03-07 | 2024-04-09 | 合肥晶合集成电路股份有限公司 | 一种bsi图像传感器及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030157782A1 (en) * | 2002-02-06 | 2003-08-21 | Kellar Scot A. | Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same |
US20060049155A1 (en) * | 2004-09-02 | 2006-03-09 | Samsung Electro-Mechanics Co., Ltd. | Wafer level package fabrication method using laser illumination |
US20080164575A1 (en) * | 2006-12-15 | 2008-07-10 | Elpida Memory, Inc. | Method for manufacturing a three-dimensional semiconductor device and a wafer used therein |
US7432596B1 (en) * | 2004-10-12 | 2008-10-07 | Energy Innovations, Inc. | Apparatus and method for bonding silicon wafer to conductive substrate |
CN101667528A (zh) * | 2008-09-04 | 2010-03-10 | 台湾积体电路制造股份有限公司 | 用于三维ic互连的衬底对衬底键合装置和方法 |
CN105036066A (zh) * | 2015-07-14 | 2015-11-11 | 华进半导体封装先导技术研发中心有限公司 | 一种晶圆级封装的保护封盖的表面处理方法 |
-
2018
- 2018-09-21 CN CN201811108922.9A patent/CN109273472B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030157782A1 (en) * | 2002-02-06 | 2003-08-21 | Kellar Scot A. | Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same |
US20060049155A1 (en) * | 2004-09-02 | 2006-03-09 | Samsung Electro-Mechanics Co., Ltd. | Wafer level package fabrication method using laser illumination |
US7432596B1 (en) * | 2004-10-12 | 2008-10-07 | Energy Innovations, Inc. | Apparatus and method for bonding silicon wafer to conductive substrate |
US20080164575A1 (en) * | 2006-12-15 | 2008-07-10 | Elpida Memory, Inc. | Method for manufacturing a three-dimensional semiconductor device and a wafer used therein |
CN101667528A (zh) * | 2008-09-04 | 2010-03-10 | 台湾积体电路制造股份有限公司 | 用于三维ic互连的衬底对衬底键合装置和方法 |
CN105036066A (zh) * | 2015-07-14 | 2015-11-11 | 华进半导体封装先导技术研发中心有限公司 | 一种晶圆级封装的保护封盖的表面处理方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265421A (zh) * | 2019-08-06 | 2019-09-20 | 德淮半导体有限公司 | 半导体结构的形成方法 |
CN117855240A (zh) * | 2024-03-07 | 2024-04-09 | 合肥晶合集成电路股份有限公司 | 一种bsi图像传感器及其制备方法 |
CN117855240B (zh) * | 2024-03-07 | 2024-05-24 | 合肥晶合集成电路股份有限公司 | 一种bsi图像传感器及其制备方法 |
Also Published As
Publication number | Publication date |
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CN109273472B (zh) | 2021-01-22 |
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20221229 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee after: Huaian Xide Industrial Design Co.,Ltd. Address before: No. 599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230714 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee after: Huaian Xide Industrial Design Co.,Ltd. Address before: No. 599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |
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TR01 | Transfer of patent right |