CN108122823B - 晶圆键合方法及晶圆键合结构 - Google Patents

晶圆键合方法及晶圆键合结构 Download PDF

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CN108122823B
CN108122823B CN201611081250.8A CN201611081250A CN108122823B CN 108122823 B CN108122823 B CN 108122823B CN 201611081250 A CN201611081250 A CN 201611081250A CN 108122823 B CN108122823 B CN 108122823B
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layer
interlayer dielectric
dielectric layer
bonding
self
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CN108122823A (zh
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陈福成
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Priority to CN201611081250.8A priority Critical patent/CN108122823B/zh
Priority to US15/825,872 priority patent/US10121762B2/en
Priority to EP17204256.6A priority patent/EP3330999A1/en
Publication of CN108122823A publication Critical patent/CN108122823A/zh
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Abstract

一种晶圆键合方法及晶圆键合结构，其中晶圆键合方法包括：提供第一晶圆和第二晶圆，所述第一晶圆上具有第一层间介质层和贯穿第一层间介质层的第一键合层，所述第二晶圆上具有第二层间介质层和贯穿第二层间介质层的第二键合层；在所述第一层间介质层表面、第二层间介质层表面、或第一层间介质层和第二层间介质层的表面形成自组装分子层；对所述第一晶圆和第二晶圆进行键合，使第一键合层和第二键合层相互固定，且第一层间介质层通过自组装分子层和第二层间介质层相互固定。所述方法能够提高第一晶圆和第二晶圆的键合质量。

Description

晶圆键合方法及晶圆键合结构
技术领域
本发明涉及半导体制造领域，尤其涉及一种晶圆键合方法及晶圆键合结构。
背景技术
随着半导体集成电路的集成度越来越高，芯片中晶体管的集成度逐渐达到上限，因此出现了3D集成电路(integrated circuit，IC)技术。3D集成电路(integratedcircuit，IC)被定义为一种系统级集成结构，3D集成电路通过键合工艺实现多个芯片之间的垂直互连，增加了芯片的空间，提高了晶体管的集成度，同时还能提高集成电路的工作速度，降低集成电路的功耗。目前，3D集成电路技术已成为集成电路设计的重要方向之一。
目前在所述3D集成电路(integrated circuit，IC)技术中大都采用硅通孔(Through Silicon Via，TSV)以及位于硅通孔上方的金属互连结构形成电连接，然后进一步实现晶圆之间的键合。晶圆水平上的Cu-Cu键合(Wafer level Cu-Cu bonding)作为3DIC中的一项关键技术，在高端产品上的有重要的应用趋势。
然而，采用现有技术的晶圆键合方法形成的晶圆键合结构的键合性能较差。
发明内容
本发明解决的问题是提供一种晶圆键合方法及晶圆键合结构，以提高第一晶圆和第二晶圆的键合质量。
为解决上述问题，本发明提供一种晶圆键合方法，包括：提供第一晶圆和第二晶圆，所述第一晶圆上具有第一层间介质层和贯穿第一层间介质层的第一键合层，所述第二晶圆上具有第二层间介质层和贯穿第二层间介质层的第二键合层；在所述第一层间介质层表面、第二层间介质层表面、或第一层间介质层和第二层间介质层的表面形成自组装分子层；对所述第一晶圆和第二晶圆进行键合，使第一键合层和第二键合层相互固定，且第一层间介质层通过自组装分子层和第二层间介质层相互固定。
可选的，所述自组装分子层仅包括第一自组装分子层，所述第一自组装分子层位于第一层间介质层表面；或者，所述自组装分子层仅包括第二自组装分子层，所述第二自组装分子层位于第二层间介质层表面；或者，所述自组装分子层包括第一自组装分子层和第二自组装分子层。
可选的，形成所述第一自组装分子层的方法包括：在所述第一层间介质层和第一键合层的表面形成第一自组装分子材料层；去除第一键合层的表面的第一自组装分子材料层，在第一层间介质层表面形成第一自组装分子层。
可选的，形成所述第一自组装分子材料层的方法包括：对所述第一层间介质层表面和第一键合层表面进行第一等离子体处理；进行所述第一等离子体处理之后，对所述第一层间介质层表面和第一键合层表面进行第一羟基化处理，使第一层间介质层表面和第一键合层表面具有羟基键；进行所述第一羟基化处理后，通入第一前躯体气体组，所述第一前躯体气体组包括第一前躯气体和水汽，第一前躯气体和水汽发生反应形成具有吸附基团的第一中间产物，所述第一中间产物中的吸附基团与第一层间介质层和第一键合层的表面的羟基键结合在一起。
可选的，所述第一等离子体处理采用的气体包括氧气；进行第一羟基化处理的方法包括：将第一层间介质层和第一键合层置于空气中，第一层间介质层表面和第一键合层表面吸附空气中的水分子；或者，在所述第一层间介质层表面和第一键合层表面通入水汽。
可选的，所述第一前躯气体的材料为CF3(CF2)7(CH2)2SiCl3、CF3(CF2)5(CH2)2SiCl3、CF3(CF2)5(CH2)2Si(OC2H5)3、CF3(CF2)5(CH2)2Si(CH3)Cl2、CF3(CF2)5(CH2)2Si(CH3)2Cl或CH3(CH2)17SiCl3。
可选的，形成所述第二自组装分子层的方法包括：在所述第二层间介质层和第二键合层的表面形成第二自组装分子材料层；去除第二键合层的表面的第二自组装分子材料层，在第二层间介质层表面形成第二自组装分子层。
可选的，形成所述第二自组装分子材料层的方法包括：对所述第二层间介质层表面和第二键合层表面进行第二等离子体处理；进行所述第二等离子体处理之后，对所述第二层间介质层表面和第二键合层表面进行第二羟基化处理，使第二层间介质层表面和第二键合层表面具有羟基键；进行所述第二羟基化处理后，通入第二前躯体气体组，所述第二前躯体气体组包括第二前躯气体和水汽，第二前躯气体和水汽发生反应形成具有吸附基团的第二中间产物，所述第二中间产物中的吸附基团与第二层间介质层和第二键合层的表面的羟基键结合在一起。
可选的，所述第二等离子体处理采用的气体包括氧气；进行第二羟基化处理的方法包括：将第二层间介质层和第二键合层置于空气中，第二层间介质层表面和第二键合层表面吸附空气中的水分子；或者，在所述第二层间介质层表面和第二键合层表面通入水汽。
可选的，所述第二前躯气体的材料为CF3(CF2)7(CH2)2SiCl3、CF3(CF2)5(CH2)2SiCl3、CF3(CF2)5(CH2)2Si(OC2H5)3、CF3(CF2)5(CH2)2Si(CH3)Cl2、CF3(CF2)5(CH2)2Si(CH3)2Cl或CH3(CH2)17SiCl3。
可选的，所述第一自组装分子层的厚度为5埃～20埃；所述第二自组装分子层的厚度为5埃～20埃。
可选的，仅在所述第一键合层和第一层间介质层之间形成有阻挡层；或者，仅在所述第二键合层和第二层间介质层之间形成有阻挡层；或者，所述第一键合层和第一层间介质层之间、以及第二键合层和第二层间介质层之间形成有阻挡层。
可选的，所述阻挡层的材料为氮化钽、钽、氮化钛或钛。
可选的，当所述第一层间介质层、第二层间介质层以及自组装分子层的总厚度大于或等于第一键合层和第二键合层的总厚度时，将第一键合层和第二键合层进行键合的工艺包括退火工艺。
可选的，所述退火工艺的参数包括：采用的温度为100摄氏度～500摄氏度，采用的时间为5分钟～6分钟。
可选的，当所述第一层间介质层、第二层间介质层以及自组装分子层的总厚度小于或等于第一键合层和第二键合层的总厚度时，将第一键合层和第二键合层进行键合的工艺为热压工艺。
可选的，所述热压工艺包括：对所述第一晶圆和第二晶圆加热加压进行键合；所述热压工艺的参数包括：采用的压强为100kPa～50MPa，采用的温度为100摄氏度～600摄氏度，采用的时间为10分钟～120分钟。
本发明还提供一种晶圆键合结构，包括：相对设置的第一晶圆和第二晶圆；位于第一晶圆表面的第一层间介质层；位于第二晶圆表面的第二层间介质层，所述第二层间介质层和第一层间介质层相对设置；位于第一晶圆和第二晶圆之间的键合体，所述键合体贯穿第一层间介质层和第二层间介质层；自组装分子层，位于第一层间介质层和第二层间介质层之间，且位于键合体侧部。
可选的，所述自组装分子层的前驱气体为CF3(CF2)7(CH2)2SiCl3、CF3(CF2)5(CH2)2SiCl3、CF3(CF2)5(CH2)2Si(OC2H5)3、CF3(CF2)5(CH2)2Si(CH3)Cl2、CF3(CF2)5(CH2)2Si(CH3)2Cl或CH3(CH2)17SiCl3。
可选的，所述键合体的材料为金属或合金。
与现有技术相比，本发明的技术方案具有以下优点：
本发明技术方案提供的晶圆键合方法中，在所述第一层间介质层表面、第二层间介质层表面、或第一层间介质层和第二层间介质层的表面形成自组装分子层。由于自组装分子层在分子级别形成，因此能够精确的控制自组装分子层的厚度，从而精确控制第一层间介质层、第二层间介质层以及自组装分子层的总厚度相对于第一键合层和第二键合层的总厚度的大小，从而满足工艺设计的要求。在对第一键合层和第二键合层进行键合后，避免第一层间介质层和第二层间介质层之间出现缝隙。从而使得第一晶圆和第二晶圆的键合质量得到提高。
本发明技术方案提供的晶圆键合结构中，包括自组装分子层，所述自组装分子层位于第一层间介质层和第二层间介质层之间，且位于键合体侧部。由于自组装分子层在分子级别形成，因此能够精确的控制自组装分子层的厚度。自组装分子层能够用于弥补键合体的厚度相对于第一层间介质层和第二层间介质层的总厚度的差值，避免第一层间介质层和第二层间介质层之间出现缝隙。从而使得第一晶圆和第二晶圆的键合质量得到提高。
附图说明
图1是一种晶圆键合结构的结构示意图；
图2至图4是本发明一实施例中晶圆键合方法进行过程的结构示意图。
具体实施方式
正如背景技术所述，现有技术形成的晶圆键合结构的键合性能较差。
图1是一种晶圆键合结构的结构示意图，晶圆键合结构包括：相对设置的第一晶圆100和第二晶圆101；位于第一晶圆100表面的第一层间介质层102；位于第二晶圆101表面的第二层间介质层103；位于第一晶圆100和第二晶圆101之间的键合体104，所述键合体104贯穿第一层间介质层102和第二层间介质层103。
一种形成上述晶圆键合结构的晶圆键合方法包括：提供第一晶圆和第二晶圆，所述第一晶圆表面具有第一层间介质层和贯穿第一层间介质层的第一键合层，第一层间介质层的厚度大于第一键合层的厚度，所述第二晶圆表面具有第二层间介质层和贯穿第二层间介质层的第二键合层，第二层间介质层的厚度大于第二键合层的厚度；将第一层间介质层和第二层间介质层对准接触后，进行退火处理，使第一键合层和第二键合层的晶粒长大，第一键合层和第二键合层键合在一起，从而形成键合体。
然而，上述方法形成的晶圆键合结构的键合质量较差，经研究发现，原因在于：
在工艺上不能精确控制第一层间介质层相对于第一键合层的厚度、以及第二层间介质层相对于第二键合层的厚度。若第一层间介质层和第二层间介质层的总厚度与第一键合层和第二键合层的总厚度相差过小，导致为第一键合层和第二键合层晶粒长大预留的空间较小。那么在进行所述退火处理后，键合体的厚度大于第一层间介质层和第二层间介质层的总厚度，且键合体的厚度相对于第一层间介质层和第二层间介质层的总厚度过大。从而导致第一层间介质层和第二层间介质层之间出现缝隙。导致第一晶圆和第二晶圆的键合性能较差。
在此基础上，本发明提供一种晶圆键合方法，包括：提供第一晶圆和第二晶圆，所述第一晶圆上具有第一层间介质层和贯穿第一层间介质层的第一键合层，所述第二晶圆上具有第二层间介质层和贯穿第二层间介质层的第二键合层；在所述第一层间介质层表面、第二层间介质层表面、或第一层间介质层和第二层间介质层的表面形成自组装分子层；对所述第一晶圆和第二晶圆进行键合，使第一键合层和第二键合层相互固定，且第一层间介质层通过自组装分子层和第二层间介质层相互固定。
所述方法中，在所述第一层间介质层表面、第二层间介质层表面、或第一层间介质层和第二层间介质层的表面形成自组装分子层。由于自组装分子层在分子级别形成，因此能够精确的控制自组装分子层的厚度，从而精确控制第一层间介质层、第二层间介质层以及自组装分子层的总厚度相对于第一键合层和第二键合层的总厚度的大小，从而满足工艺设计的要求。在对第一键合层和第二键合层进行键合后，避免第一层间介质层和第二层间介质层之间出现缝隙。从而使得第一晶圆和第二晶圆的键合质量得到提高。
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施例做详细的说明。
图2至图4是本发明一实施例中晶圆键合方法进行过程的结构示意图。
参考图2，提供第一晶圆200和第二晶圆300，所述第一晶圆200上具有第一层间介质层210和贯穿第一层间介质层210的第一键合层220，所述第二晶圆300上具有第二层间介质层310和贯穿第二层间介质层310的第二键合层320。
所述第一晶圆200中可以形成有CMOS集成电路(未图示)。第二晶圆300中可以形成有传感器，如运动传感器或图像传感器。所述图像传感器包括CMOS图像传感器。所述CMOS集成电路和所述传感器电学连接。
所述第一层间介质层210的材料为氧化硅、氮氧化硅或碳氧化硅。所述第二层间介质层310的材料为氧化硅、氮氧化硅或碳氧化硅。
所述第一键合层220的材料为金属，如铜、铝或金。所述第一键合层220的材料还可以为合金。
所述第二键合层320的材料为金属，如铜、铝或金。所述第二键合层320的材料还可以为合金。
所述第一键合层220的材料为金属或合金时，所述第二键合层320的材料还可以为硅或锗。所述第二键合层320的材料为金属或合金时，所述第一键合层220的材料还可以为硅或锗。
本实施例中，所述第一键合层220的材料和第二键合层320的材料相同，优点为：能够在相同的工艺制程中形成分别形成所述第一键合层220和第二键合层320，简化了工艺。在其它实施例中，所述第一键合层的材料和第二键合层的材料不同。
形成第一晶圆200、第一层间介质层210和第一键合层220的方法包括：提供第一晶圆200，所述第一晶圆200具有相对的第一面和第二面，在所述第一面形成第一初始层间介质层；图形化所述第一初始层间介质层，使第一初始层间介质层形成第一层间介质层210，所述第一层间介质层210中具有第一开口；在所述第一开口中以及第一层间介质层210表面形成第一初始键合层；平坦化所述第一初始键合层直至暴露出第一层间介质层210表面，形成贯穿第一层间介质层210的第一键合层220。
形成所述第一初始层间介质层的工艺为沉积工艺。图形化所述第一初始层间介质层的工艺为有掩膜的刻蚀工艺。平坦化所述第一初始键合层的工艺包括化学机械研磨工艺。
本实施例中，在采用化学机械研磨工艺平坦化所述第一初始键合层的过程中，对第一初始键合层的研磨速率小于对第一层间介质层210的研磨速率，使得第一键合层220的厚度大于第一层间介质层210的厚度，因此第一键合层220凸出于第一层间介质层210的顶部表面。
在其它实施例中，第一键合层的顶部表面齐平于第一层间介质层的顶部表面；或者，第一键合层的厚度小于第一层间介质层的厚度。
形成第二晶圆300、第二层间介质层310和第二键合层320的方法包括：提供第二晶圆300，所述第二晶圆300具有相对的第三面和第四面，在所述第三面形成第二初始层间介质层；图形化所述第二初始层间介质层，使第二初始层间介质层形成第二层间介质层310，所述第二层间介质层310中具有第二开口；在所述第二开口中以及第二层间介质层310表面形成第二初始键合层；平坦化所述第二初始键合层直至暴露出第二层间介质层310表面，形成贯穿第二层间介质层310的第二键合层320。
形成所述第二初始层间介质层的工艺为沉积工艺。图形化所述第二初始层间介质层的工艺为有掩膜的刻蚀工艺。平坦化所述第二初始键合层的工艺包括化学机械研磨工艺。
本实施例中，在采用化学机械研磨工艺平坦化所述第二初始键合层的过程中，对第二初始键合层的研磨速率小于对第二层间介质层310的研磨速率，使得第二键合层320的厚度大于第二层间介质层310的厚度，因此第二键合层320凸出于第二层间介质层310的顶部表面。
在其它实施例中，第二键合层的顶部表面齐平于第二层间介质层的顶部表面；或者，第二键合层的厚度小于第二层间介质层的厚度。
参考图3，在所述第一层间介质层210表面、第二层间介质层310表面、或第一层间介质层210和第二层间介质层310的表面形成自组装分子层230。
本实施例中，在所述第一层间介质层210和第二层间介质层310的表面均形成自组装分子层230。所述自组装分子层210包括第一自组装分子层和第二自组装分子层，所述第一自组装分子层位于第一层间介质层210表面，所述第二自组装分子层位于第二层间介质层310表面。
所述第一自组装分子层和第二自组装分子层均为单分子层。
在所述第一层间介质层210和第二层间介质层310的表面均形成自组装分子层230的优点在于：使得自组装分子层230的总厚度为双分子层的厚度，当自组装分子层230的总厚度的设计值较大时，满足自组装分子层230总厚度的要求。
形成所述第一自组装分子层的方法包括：在所述第一层间介质层210和第一键合层220的表面形成第一自组装分子材料层；去除第一键合层220表面的第一自组装分子材料层，在第一层间介质层210表面形成第一自组装分子层。
形成所述第一自组装分子材料层的方法包括：对所述第一层间介质层210表面和第一键合层220表面进行第一等离子体处理；进行所述第一等离子体处理之后，对所述第一层间介质层210表面和第一键合层220表面进行第一羟基化处理，使第一层间介质层210表面和第一键合层220表面具有羟基键；进行所述第一羟基化处理后，通入第一前躯体气体组，所述第一前躯体气体组包括第一前躯气体和水汽，第一前躯气体和水汽发生反应形成具有吸附基团的第一中间产物，所述第一中间产物中的吸附基团与第一层间介质层210和第一键合层220的表面的羟基键结合在一起。
所述第一等离子体处理采用的气体包括氧气。
进行第一羟基化处理的方法包括：将第一层间介质层210和第一键合层220置于空气中，第一层间介质层210表面和第一键合层220表面吸附空气中的水分子；或者，在所述第一层间介质层210表面和第一键合层220表面通入水汽。
所述第一前躯气体的材料为FDTS(CF3(CF2)7(CH2)2SiCl3)、FOTS(CF3(CF2)5(CH2)2SiCl3)、FOTES(CF3(CF2)5(CH2)2Si(OC2H5)3)、FOMDS(CF3(CF2)5(CH2)2Si(CH3)Cl2)、FOMMS(CF3(CF2)5(CH2)2Si(CH3)2Cl)或OTS(CH3(CH2)17SiCl3)。
去除第一键合层220表面的第一自组装分子材料层的工艺包括烘烤工艺。
由于第一自组装分子材料层和第一键合层220之间的结合力小于第一自组装分子材料层和第一层间介质层210之间的结合力，因此通过合适温度下的烘烤，第一自组装分子材料层能够脱离第一键合层220的表面且保留在第一层间介质层210的表面。
本实施例中，烘烤第一自组装分子材料层的温度为280摄氏度～320摄氏度。
形成所述第二自组装分子层的方法包括：在所述第二层间介质层310和第二键合层320的表面形成第二自组装分子材料层；去除第二键合层320表面的第二自组装分子材料层，在第二层间介质层310表面形成第二自组装分子层。
形成所述第二自组装分子材料层的方法包括：对所述第二层间介质层310表面和第二键合层320表面进行第二等离子体处理；进行所述第二等离子体处理之后，对所述第二层间介质层310表面和第二键合层320表面进行第二羟基化处理，使第二层间介质层310表面和第二键合层320表面具有羟基键；进行所述第二羟基化处理后，通入第二前躯体气体组，所述第二前躯体气体组包括第二前躯气体和水汽，第二前躯气体和水汽发生反应形成具有吸附基团的第二中间产物，所述第二中间产物中的吸附基团与第二层间介质层310和第二键合层320的表面的羟基键结合在一起。
所述第二等离子体处理采用的气体包括氧气。
进行第二羟基化处理的方法包括：将第二层间介质层310和第二键合层320置于空气中，第二层间介质层310表面和第二键合层320表面吸附空气中的水分子；或者，在所述第二层间介质层310表面和第二键合层320表面通入水汽。
所述第二前躯气体的材料为FDTS(CF3(CF2)7(CH2)2SiCl3)、FOTS(CF3(CF2)5(CH2)2SiCl3)、FOTES(CF3(CF2)5(CH2)2Si(OC2H5)3)、FOMDS(CF3(CF2)5(CH2)2Si(CH3)Cl2)、FOMMS(CF3(CF2)5(CH2)2Si(CH3)2Cl)或OTS(CH3(CH2)17SiCl3)。
由于第二自组装分子材料层和第二键合层320之间的结合力小于第二自组装分子材料层和第二层间介质层310之间的结合力，因此通过合适温度下的烘烤，第二自组装分子材料层能够脱离第二键合层320的表面且保留在第二层间介质层310的表面。
本实施例中，烘烤第二自组装分子材料层的温度为280摄氏度～320摄氏度。
第一等离子体处理和第二等离子体处理同时进行；或者，第一等离子体处理和第二等离子体处理分别进行。
第一羟基化处理和第二羟基化处理同时进行；或者，第一羟基化处理和第二羟基化处理分别进行。
第一前躯气体和第二前驱气体为同一环境下的气体，或者，第一前躯气体和第二前驱气体为不同环境下的气体。
本实施例中，所述第一自组装分子层的厚度为5埃～20埃；所述第二自组装分子层的厚度为5埃～20埃。在其它实施例中，所述第一自组装分子层和第二自组装分子层的厚度可以根据实际工艺需要进行确定。
在其它实施例中，所述自组装分子层仅包括第一自组装分子层。或者，所述自组装分子层仅包括第二自组装分子层。
由于自组装分子层230在分子级别形成，因此能够精确的控制自组装分子层230的厚度，从而精确控制第一层间介质层210、第二层间介质层310以及自组装分子层230的总厚度相对于第一键合层220和第二键合层320的总厚度的大小。从而满足工艺设计的要求。
本实施例中，所述第一键合层220和第一层间介质层210之间、以及第二键合层320和第二层间介质层310之间还形成有阻挡层。
所述阻挡层的材料为氮化钽、钽、氮化钛或钛。
所述阻挡层的作用包括：避免第一键合层220扩散至第一层间介质层和第一晶圆200中；避免第二键合层320扩散至第二层间介质层310和第二晶圆300中。
在其它实施例中，仅在所述第一键合层和第一层间介质层之间形成有阻挡层；或者，仅在所述第二键合层和第二层间介质层之间形成有阻挡层。
本实施例中，第一层间介质层210、第二层间介质层310以及自组装分子层230的总厚度大于第一键合层220和第二键合层320的总厚度。在其它实施例中，第一层间介质层、第二层间介质层以及自组装分子层的总厚度小于或等于第一键合层和第二键合层的总厚度。
当第一层间介质层210、第二层间介质层310以及自组装分子层230的总厚度小于第一键合层220和第二键合层320的总厚度时，第一层间介质层210、第二层间介质层310以及自组装分子层230的总厚度与第一键合层220和第二键合层320的总厚度的差值为小于100埃。在此情况下，后续采用热压工艺对所述第一晶圆200和第二晶圆300进行键合，在进行热压工艺过程中，在一定压力作用下，第一晶圆200和第二晶圆300产生微小形变，使得第一层间介质层210表面的自组装分子层230和第二层间介质层310表面的自组装分子层230接触。
参考图4，对所述第一晶圆200和第二晶圆300进行键合，使第一键合层220和第二键合层320相互固定，且第一层间介质层210通过自组装分子层230和第二层间介质层310相互固定。
当第一层间介质层210、第二层间介质层310以及自组装分子层230的总厚度大于或等于第一键合层220和第二键合层320的总厚度时，将第一晶圆200和第二晶圆300进行键合的工艺包括退火工艺。
所述退火工艺的参数包括：采用的温度为100摄氏度～500摄氏度，采用的时间为5分钟～6分钟。
若所述退火工艺的温度大于500摄氏度，导致工艺浪费，且容易引起自组装分子层230从第一层间介质层和第二层间介质层大量溢脱；若所述退火工艺的温度小于100摄氏度，导致第一键合层220和第二键合层320的晶粒生长的速率过慢，降低了工艺效率。
若所述退火工艺的时间大于6分钟，导致工艺浪费；若所述退火工艺的时间小于5分钟，导致第一键合层220和第二键合层320的晶粒没有足够的时间生长到稳定的尺寸。
在退火工艺中，第一键合层220和第二键合层320的晶粒长大，并在一定温度下键合在一起。同时，第一层间介质层210通过自组装分子层230和第二层间介质层310接合在一起，第一层间介质层210通过自组装分子层230和第二层间介质层310键合在一起的机理为：第一层间介质层210表面的自组装分子层230和第二层间介质层310表面的自组装分子层230通过范德华力键合。
当第一层间介质层210、第二层间介质层310以及自组装分子层230的总厚度小于或等于第一键合层220和第二键合层320的总厚度时，将第一键合层220和第二键合层320进行键合的工艺为热压工艺。
所述热压工艺包括：对所述第一键合层220和第二键合层320加热加压进行键合；所述热压工艺的参数包括：采用的压强为100kPa～50MPa，采用的温度为100摄氏度～600摄氏度，采用的时间为10分钟～120分钟。
采用热压工艺对第一键合层220和第二键合层320进行键合，在热压工艺过程中，在一定压力作用下，第一晶圆200和第二晶圆300产生微小形变，使得第一层间介质层210表面的自组装分子层230和第二层间介质层310表面的自组装分子层230接触，并在一定压力下，第一层间介质层210通过自组装分子层230和第二层间介质层310键合在一起。第一层间介质层210通过自组装分子层230和第二层间介质层310接合在一起的机理为：第一层间介质层210表面的自组装分子层230和第二层间介质层310表面的自组装分子层230通过范德华力键合。
由于能够精确控制第一层间介质层210、第二层间介质层310以及自组装分子层230的总厚度相对于第一键合层220和第二键合层320的总厚度的大小，因此在对第一键合层220和第二键合层320进行键合后，避免第一层间介质层210和第二层间介质层310之间出现缝隙。从而使得第一晶圆200和第二晶圆300的键合质量得到提高。
相应的，本实施例还提供一种采用上述方法形成的晶圆键合结构，请继续参考图4，包括：相对设置的第一晶圆200和第二晶圆300；位于第一晶圆200表面的第一层间介质层210；位于第二晶圆200表面的第二层间介质层310，所述第二层间介质层310和第一层间介质层210相对设置；位于第一晶圆200和第二晶圆300之间的键合体240，所述键合体240贯穿第一层间介质层210和第二层间介质层310；自组装分子层230，位于第一层间介质层210和第二层间介质层310之间，且位于键合体240侧部。
所述自组装分子层230的前驱气体为FDTS(CF3(CF2)7(CH2)2SiCl3)、FOTS(CF3(CF2)5(CH2)2SiCl3)、FOTES(CF3(CF2)5(CH2)2Si(OC2H5)3)、FOMDS(CF3(CF2)5(CH2)2Si(CH3)Cl2)、FOMMS(CF3(CF2)5(CH2)2Si(CH3)2Cl)或OTS(CH3(CH2)17SiCl3)。
所述键合体240的材料为金属，如铜、铝、金；所述键合体240的材料还可以为合金材料。
本实施例提供的晶圆键合结构中，包括自组装分子层230，所述自组装分子层230位于第一层间介质层210和第二层间介质层310之间，且位于键合体240侧部。由于自组装分子层230在分子级别形成，因此能够精确的控制自组装分子层230的厚度。自组装分子层230能够用于弥补键合体240的厚度相对于第一层间介质层210和第二层间介质层310的总厚度的差值，避免第一层间介质层210和第二层间介质层310之间出现缝隙。从而使得第一晶圆200和第二晶圆300的键合质量得到提高。
虽然本发明披露如上，但本发明并非限定于此。任何本领域技术人员，在不脱离本发明的精神和范围内，均可作各种更动与修改，因此本发明的保护范围应当以权利要求所限定的范围为准。

Claims (19)

1.一种晶圆键合方法，其特征在于，包括：
提供第一晶圆和第二晶圆，所述第一晶圆上具有第一层间介质层和贯穿第一层间介质层的第一键合层，所述第二晶圆上具有第二层间介质层和贯穿第二层间介质层的第二键合层；
在所述第一层间介质层表面、第二层间介质层表面、或第一层间介质层和第二层间介质层的表面形成自组装分子层；
对所述第一晶圆和第二晶圆进行键合，使第一键合层和第二键合层相互固定，且第一层间介质层通过自组装分子层和第二层间介质层相互固定，避免第一层间介质层和第二层间介质层之间出现缝隙；
所述自组装分子层仅包括第一自组装分子层，所述第一自组装分子层仅位于第一层间介质层表面；或者，所述自组装分子层仅包括第二自组装分子层，所述第二自组装分子层仅位于第二层间介质层表面；或者，所述自组装分子层包括第一自组装分子层和第二自组装分子层。
2.根据权利要求1所述的晶圆键合方法，其特征在于，形成所述第一自组装分子层的方法包括：在所述第一层间介质层和第一键合层的表面形成第一自组装分子材料层；去除第一键合层的表面的第一自组装分子材料层，在第一层间介质层表面形成第一自组装分子层。
3.根据权利要求2所述的晶圆键合方法，其特征在于，形成所述第一自组装分子材料层的方法包括：对所述第一层间介质层表面和第一键合层表面进行第一等离子体处理；进行所述第一等离子体处理之后，对所述第一层间介质层表面和第一键合层表面进行第一羟基化处理，使第一层间介质层表面和第一键合层表面具有羟基键；进行所述第一羟基化处理后，通入第一前躯体气体组，所述第一前躯体气体组包括第一前躯气体和水汽，第一前躯气体和水汽发生反应形成具有吸附基团的第一中间产物，所述第一中间产物中的吸附基团与第一层间介质层和第一键合层的表面的羟基键结合在一起。
4.根据权利要求3所述的晶圆键合方法，其特征在于，所述第一等离子体处理采用的气体包括氧气；进行第一羟基化处理的方法包括：将第一层间介质层和第一键合层置于空气中，第一层间介质层表面和第一键合层表面吸附空气中的水分子；或者，在所述第一层间介质层表面和第一键合层表面通入水汽。
5.根据权利要求3所述的晶圆键合方法，其特征在于，所述第一前躯气体的材料为CF3(CF2)7(CH2)2SiCl3、CF3(CF2)5(CH2)2SiCl3、CF3(CF2)5(CH2)2Si(OC2H5)3、CF3(CF2)5(CH2)2Si(CH3)Cl2、CF3(CF2)5(CH2)2Si(CH3)2Cl或CH3(CH2)17SiCl3。
6.根据权利要求1所述的晶圆键合方法，其特征在于，形成所述第二自组装分子层的方法包括：在所述第二层间介质层和第二键合层的表面形成第二自组装分子材料层；去除第二键合层的表面的第二自组装分子材料层，在第二层间介质层表面形成第二自组装分子层。
7.根据权利要求6所述的晶圆键合方法，其特征在于，形成所述第二自组装分子材料层的方法包括：对所述第二层间介质层表面和第二键合层表面进行第二等离子体处理；进行所述第二等离子体处理之后，对所述第二层间介质层表面和第二键合层表面进行第二羟基化处理，使第二层间介质层表面和第二键合层表面具有羟基键；进行所述第二羟基化处理后，通入第二前躯体气体组，所述第二前躯体气体组包括第二前躯气体和水汽，第二前躯气体和水汽发生反应形成具有吸附基团的第二中间产物，所述第二中间产物中的吸附基团与第二层间介质层和第二键合层的表面的羟基键结合在一起。
8.根据权利要求7所述的晶圆键合方法，其特征在于，所述第二等离子体处理采用的气体包括氧气；进行第二羟基化处理的方法包括：将第二层间介质层和第二键合层置于空气中，第二层间介质层表面和第二键合层表面吸附空气中的水分子；或者，在所述第二层间介质层表面和第二键合层表面通入水汽。
9.根据权利要求7所述的晶圆键合方法，其特征在于，所述第二前躯气体的材料为CF3(CF2)7(CH2)2SiCl3、CF3(CF2)5(CH2)2SiCl3、CF3(CF2)5(CH2)2Si(OC2H5)3、CF3(CF2)5(CH2)2Si(CH3)Cl2、CF3(CF2)5(CH2)2Si(CH3)2Cl或CH3(CH2)17SiCl3。
10.根据权利要求1所述的晶圆键合方法，其特征在于，所述第一自组装分子层的厚度为5埃～20埃；所述第二自组装分子层的厚度为5埃～20埃。
11.根据权利要求1所述的晶圆键合方法，其特征在于，仅在所述第一键合层和第一层间介质层之间形成有阻挡层；或者，仅在所述第二键合层和第二层间介质层之间形成有阻挡层；或者，所述第一键合层和第一层间介质层之间、以及第二键合层和第二层间介质层之间形成有阻挡层。
12.根据权利要求11所述的晶圆键合方法，其特征在于，所述阻挡层的材料为氮化钽、钽、氮化钛或钛。
13.根据权利要求1所述的晶圆键合方法，其特征在于，当所述第一层间介质层、第二层间介质层以及自组装分子层的总厚度大于或等于第一键合层和第二键合层的总厚度时，将第一键合层和第二键合层进行键合的工艺包括退火工艺。
14.根据权利要求13所述的晶圆键合方法，其特征在于，所述退火工艺的参数包括：采用的温度为100摄氏度～500摄氏度，采用的时间为5分钟～6分钟。
15.根据权利要求1所述的晶圆键合方法，其特征在于，当所述第一层间介质层、第二层间介质层以及自组装分子层的总厚度小于或等于第一键合层和第二键合层的总厚度时，将第一键合层和第二键合层进行键合的工艺为热压工艺。
16.根据权利要求15所述的晶圆键合方法，其特征在于，所述热压工艺包括：对所述第一晶圆和第二晶圆加热加压进行键合；所述热压工艺的参数包括：采用的压强为100kPa～50MPa，采用的温度为100摄氏度～600摄氏度，采用的时间为10分钟～120分钟。
17.一种晶圆键合结构，其特征在于，包括：
相对设置的第一晶圆和第二晶圆；
位于第一晶圆表面的第一层间介质层；
位于第二晶圆表面的第二层间介质层，所述第二层间介质层和第一层间介质层相对设置；
位于第一晶圆和第二晶圆之间的键合体，所述键合体贯穿第一层间介质层和第二层间介质层；
自组装分子层，位于第一层间介质层和第二层间介质层之间，且位于键合体侧部，通过第一层间介质层通过自组装分子层和第二层间介质层相互固定，避免第一层间介质层和第二层间介质层之间出现缝隙；
所述自组装分子层仅包括第一自组装分子层，所述第一自组装分子层仅位于第一层间介质层表面；或者，所述自组装分子层仅包括第二自组装分子层，所述第二自组装分子层仅位于第二层间介质层表面；或者，所述自组装分子层包括第一自组装分子层和第二自组装分子层。
18.根据权利要求17所述的晶圆键合结构，其特征在于，所述自组装分子层的前驱气体为CF3(CF2)7(CH2)2SiCl3、CF3(CF2)5(CH2)2SiCl3、CF3(CF2)5(CH2)2Si(OC2H5)3、CF3(CF2)5(CH2)2Si(CH3)Cl2、CF3(CF2)5(CH2)2Si(CH3)2Cl或CH3(CH2)17SiCl3。
19.根据权利要求17所述的晶圆键合结构，其特征在于，所述键合体的材料为金属或合金。
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