CN1588617A - 硅片低温直接键合方法 - Google Patents
硅片低温直接键合方法 Download PDFInfo
- Publication number
- CN1588617A CN1588617A CN 200410074342 CN200410074342A CN1588617A CN 1588617 A CN1588617 A CN 1588617A CN 200410074342 CN200410074342 CN 200410074342 CN 200410074342 A CN200410074342 A CN 200410074342A CN 1588617 A CN1588617 A CN 1588617A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- temperature
- plasma
- temp
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004381 surface treatment Methods 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000003595 mist Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000005496 eutectics Effects 0.000 abstract description 3
- 239000002344 surface layer Substances 0.000 abstract description 3
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 abstract 1
- DBRHOLYIDDOQSD-UHFFFAOYSA-N alumane;lead Chemical compound [AlH3].[Pb] DBRHOLYIDDOQSD-UHFFFAOYSA-N 0.000 abstract 1
- 230000010339 dilation Effects 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 11
- 239000010410 layer Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100743424A CN1305110C (zh) | 2004-09-10 | 2004-09-10 | 硅片低温直接键合方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100743424A CN1305110C (zh) | 2004-09-10 | 2004-09-10 | 硅片低温直接键合方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1588617A true CN1588617A (zh) | 2005-03-02 |
CN1305110C CN1305110C (zh) | 2007-03-14 |
Family
ID=34604815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100743424A Expired - Fee Related CN1305110C (zh) | 2004-09-10 | 2004-09-10 | 硅片低温直接键合方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1305110C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017045264A1 (zh) * | 2015-09-18 | 2017-03-23 | 北京工业大学 | 等离子体辅助的玻璃或石英芯片的微结构对准及预键合方法 |
CN108122823A (zh) * | 2016-11-30 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | 晶圆键合方法及晶圆键合结构 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1003900B (zh) * | 1987-12-12 | 1989-04-12 | 南京工学院 | 半导体直接键合的表面处理方法 |
CN1009514B (zh) * | 1987-12-29 | 1990-09-05 | 东南大学 | 半导体直接键合的工艺方法 |
FI92500C (fi) * | 1993-03-03 | 1994-11-25 | Valtion Teknillinen | Menetelmä mekaanisen massan valmistamiseksi |
CN1218365C (zh) * | 2003-09-05 | 2005-09-07 | 中国电子科技集团公司第十三研究所 | 基于硅硅键合的全干法深刻蚀微机械加工方法 |
-
2004
- 2004-09-10 CN CNB2004100743424A patent/CN1305110C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017045264A1 (zh) * | 2015-09-18 | 2017-03-23 | 北京工业大学 | 等离子体辅助的玻璃或石英芯片的微结构对准及预键合方法 |
US9842749B2 (en) | 2015-09-18 | 2017-12-12 | Beijing University Of Technology | Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip |
CN108122823A (zh) * | 2016-11-30 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | 晶圆键合方法及晶圆键合结构 |
CN108122823B (zh) * | 2016-11-30 | 2020-11-03 | 中芯国际集成电路制造(上海)有限公司 | 晶圆键合方法及晶圆键合结构 |
Also Published As
Publication number | Publication date |
---|---|
CN1305110C (zh) | 2007-03-14 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: BEIJING TAISHIXINGUANG SCIENCE CO., LTD. Free format text: FORMER OWNER: BEIJING POLYTECHNIC UNIV. Effective date: 20081024 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081024 Address after: Branch of Beijing economic and Technological Development Zone two Beijing street, No. 4 Building 2 layer in the south of 1-4 Patentee after: Beijing TimesLED Technology Co.,Ltd. Address before: No. 100 Ping Park, Beijing, Chaoyang District Patentee before: Beijing University of Technology |
|
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: No. 1 North Ze street, Beijing Economic Development Zone, Beijing Patentee after: Beijing TimesLED Technology Co.,Ltd. Address before: Branch of Beijing economic and Technological Development Zone two Beijing street, No. 4 Building 2 layer in the south of 1-4 Patentee before: Beijing TimesLED Technology Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070314 Termination date: 20150910 |
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EXPY | Termination of patent right or utility model |