CN103426725B - 由锌金属和过氧化锌的反应性结合形成的层状结合的结构 - Google Patents

由锌金属和过氧化锌的反应性结合形成的层状结合的结构 Download PDF

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Publication number
CN103426725B
CN103426725B CN201310174108.8A CN201310174108A CN103426725B CN 103426725 B CN103426725 B CN 103426725B CN 201310174108 A CN201310174108 A CN 201310174108A CN 103426725 B CN103426725 B CN 103426725B
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CN
China
Prior art keywords
zinc
structures
layer
zinc oxide
peroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310174108.8A
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English (en)
Chinese (zh)
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CN103426725A (zh
Inventor
R·L·吴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing Co
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Publication of CN103426725A publication Critical patent/CN103426725A/zh
Application granted granted Critical
Publication of CN103426725B publication Critical patent/CN103426725B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31536—Including interfacial reaction product of adjacent layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
CN201310174108.8A 2012-05-14 2013-05-13 由锌金属和过氧化锌的反应性结合形成的层状结合的结构 Expired - Fee Related CN103426725B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/471,306 US9105561B2 (en) 2012-05-14 2012-05-14 Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide
US13/471,306 2012-05-14

Publications (2)

Publication Number Publication Date
CN103426725A CN103426725A (zh) 2013-12-04
CN103426725B true CN103426725B (zh) 2017-10-27

Family

ID=48128151

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310174108.8A Expired - Fee Related CN103426725B (zh) 2012-05-14 2013-05-13 由锌金属和过氧化锌的反应性结合形成的层状结合的结构

Country Status (5)

Country Link
US (2) US9105561B2 (enExample)
EP (1) EP2665088B1 (enExample)
JP (2) JP6351211B2 (enExample)
KR (1) KR102082009B1 (enExample)
CN (1) CN103426725B (enExample)

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DE112019006574T5 (de) * 2019-01-07 2021-10-28 Sony Group Corporation Strukturkörper, strukturkörperherstellungsverfahren und elektronisches gerät
CN110739285A (zh) * 2019-10-30 2020-01-31 北京工业大学 硅基金属中间层化合物半导体晶圆的结构及制备方法
FR3117666B1 (fr) * 2020-12-15 2022-10-28 Commissariat Energie Atomique Procede de fabrication d’une structure semi-conductrice comprenant une zone d’interface incluant des agglomerats

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Also Published As

Publication number Publication date
CN103426725A (zh) 2013-12-04
US20150303316A1 (en) 2015-10-22
EP2665088A2 (en) 2013-11-20
US20130302622A1 (en) 2013-11-14
JP2013243360A (ja) 2013-12-05
EP2665088B1 (en) 2021-06-02
US9105561B2 (en) 2015-08-11
KR102082009B1 (ko) 2020-02-26
JP6351211B2 (ja) 2018-07-04
KR20130127361A (ko) 2013-11-22
JP2018093222A (ja) 2018-06-14
EP2665088A3 (en) 2014-06-04
US9978893B2 (en) 2018-05-22

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Granted publication date: 20171027