JP6347744B2 - 積層半導体構造における縦方向の電気接続の形成方法 - Google Patents

積層半導体構造における縦方向の電気接続の形成方法 Download PDF

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JP6347744B2
JP6347744B2 JP2014511848A JP2014511848A JP6347744B2 JP 6347744 B2 JP6347744 B2 JP 6347744B2 JP 2014511848 A JP2014511848 A JP 2014511848A JP 2014511848 A JP2014511848 A JP 2014511848A JP 6347744 B2 JP6347744 B2 JP 6347744B2
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copper
insulating layer
support substrate
semiconductor structure
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JP2014519201A (ja
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ドミニク シュール
ドミニク シュール
ヴァンサン メヴェレク
ヴァンサン メヴェレク
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アヴェニ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
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    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
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    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0265—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the sidewall insulation
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    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
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    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/094—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by transforming insulators into conductors
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2014511848A 2011-05-23 2012-05-22 積層半導体構造における縦方向の電気接続の形成方法 Expired - Fee Related JP6347744B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161489015P 2011-05-23 2011-05-23
EP11305632.9A EP2528089B1 (en) 2011-05-23 2011-05-23 Method for forming a vertical electrical connection in a layered semiconductor structure
EP11305632.9 2011-05-23
US61/489,015 2011-05-23
PCT/EP2012/059503 WO2012160063A1 (en) 2011-05-23 2012-05-22 Method for forming a vertical electrical connection in a layered semiconductor structure

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JP2014519201A JP2014519201A (ja) 2014-08-07
JP2014519201A5 JP2014519201A5 (https=) 2017-02-02
JP6347744B2 true JP6347744B2 (ja) 2018-06-27

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US (1) US9368397B2 (https=)
EP (1) EP2528089B1 (https=)
JP (1) JP6347744B2 (https=)
KR (1) KR102014891B1 (https=)
CN (1) CN103582942B (https=)
CA (1) CA2836845C (https=)
IL (1) IL229519B (https=)
SG (1) SG194863A1 (https=)
TW (1) TWI594387B (https=)
WO (1) WO2012160063A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367139B (zh) * 2013-07-11 2016-08-24 华进半导体封装先导技术研发中心有限公司 一种tsv孔底部介质层刻蚀方法
JP2015041691A (ja) * 2013-08-21 2015-03-02 株式会社東芝 半導体装置および半導体装置の製造方法
US9321635B2 (en) * 2013-11-28 2016-04-26 Solid State System Co., Ltd. Method to release diaphragm in MEMS device
WO2017209296A1 (ja) * 2016-06-03 2017-12-07 大日本印刷株式会社 貫通電極基板及びその製造方法、並びに実装基板
CN109835867B (zh) * 2017-11-24 2023-07-14 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
CN109082216B (zh) * 2018-05-23 2019-12-27 同济大学 一种弹性导电膜及其制备方法
CN111180416B (zh) * 2018-11-13 2025-04-25 长鑫存储技术有限公司 半导体结构及其制备工艺以及半导体器件
CN110634837A (zh) * 2019-09-27 2019-12-31 哈尔滨理工大学 一种用于铜互联电路中的扩散阻挡层
US11276650B2 (en) * 2019-10-31 2022-03-15 Avago Technologies International Sales Pte. Limited Stress mitigation structure
JP7419877B2 (ja) * 2020-02-28 2024-01-23 セイコーエプソン株式会社 振動デバイス、電子機器および移動体
CN116547787A (zh) * 2020-10-23 2023-08-04 华为技术有限公司 封装结构及封装结构的制备方法
JP7581915B2 (ja) 2021-01-26 2024-11-13 セイコーエプソン株式会社 振動デバイスおよび振動デバイスの製造方法
CN113594132A (zh) * 2021-07-29 2021-11-02 日月光半导体制造股份有限公司 半导体封装装置及其制造方法
EP4195246A1 (fr) * 2021-12-07 2023-06-14 STMicroelectronics Crolles 2 SAS Procédé de fabrication d'un via
JP2023157102A (ja) 2022-04-14 2023-10-26 セイコーエプソン株式会社 発振器の製造方法
FI20235748A1 (en) * 2023-06-28 2024-12-29 Canatu Finland Oy Functionalization of carbon nanostructures

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510776A (https=) 1951-04-20
US3642549A (en) * 1969-01-15 1972-02-15 Ibm Etching composition indication
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4442421A (en) * 1981-07-31 1984-04-10 Jacobus Otha J Semiconducting coordination polymers and electrical applications thereof
JP2678701B2 (ja) * 1992-02-19 1997-11-17 石原薬品 株式会社 電気銅めっき液
JP4189141B2 (ja) * 2000-12-21 2008-12-03 株式会社東芝 基板処理装置及びこれを用いた基板処理方法
US6645832B2 (en) 2002-02-20 2003-11-11 Intel Corporation Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stack
EP1245697A3 (de) * 2002-07-17 2003-02-19 ATOTECH Deutschland GmbH Verfahren zum aussenstromlosen Abscheiden von Silber
US7297190B1 (en) * 2006-06-28 2007-11-20 Lam Research Corporation Plating solutions for electroless deposition of copper
US7060624B2 (en) 2003-08-13 2006-06-13 International Business Machines Corporation Deep filled vias
US7101792B2 (en) 2003-10-09 2006-09-05 Micron Technology, Inc. Methods of plating via interconnects
US8158532B2 (en) * 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
US7598167B2 (en) * 2004-08-24 2009-10-06 Micron Technology, Inc. Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
JP2006093227A (ja) * 2004-09-21 2006-04-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
FR2890984B1 (fr) * 2005-09-20 2009-03-27 Alchimer Sa Procede d'electrodeposition destine au revetement d'une surface d'un substrat par un metal.
US7579274B2 (en) * 2006-02-21 2009-08-25 Alchimer Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices
EP1989345B1 (fr) 2006-02-28 2015-03-11 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Procede de formation de films organiques sur des surfaces conductrices ou semi-conductrices de l'electricite a partir de solutions aqueuses
US7285477B1 (en) * 2006-05-16 2007-10-23 International Business Machines Corporation Dual wired integrated circuit chips
JP5245135B2 (ja) * 2007-06-30 2013-07-24 株式会社ザイキューブ 貫通導電体を有する半導体装置およびその製造方法
EP2255386B1 (en) * 2008-03-19 2016-05-04 Imec Method of fabricating through-substrate vias and semiconductor chip prepared for being provided with a through-substrate via
FR2933425B1 (fr) * 2008-07-01 2010-09-10 Alchimer Procede de preparation d'un film isolant electrique et application pour la metallisation de vias traversants
US8742588B2 (en) * 2008-10-15 2014-06-03 ÅAC Microtec AB Method for making via interconnection
CN102132409A (zh) * 2008-11-21 2011-07-20 松下电器产业株式会社 半导体装置及其制造方法
JP2010129952A (ja) * 2008-12-01 2010-06-10 Nippon Telegr & Teleph Corp <Ntt> 貫通電極配線の製造方法
US8043965B2 (en) * 2009-02-11 2011-10-25 Northrop Grumann Systems Corporation Method of forming a through substrate via in a compound semiconductor
JP2010205921A (ja) * 2009-03-03 2010-09-16 Olympus Corp 半導体装置および半導体装置の製造方法
FR2943688B1 (fr) * 2009-03-27 2012-07-20 Alchimer Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur
FR2950633B1 (fr) * 2009-09-30 2011-11-25 Alchimer Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur.
FR2961220B1 (fr) 2010-06-11 2012-08-17 Alchimer Composition d'electrodeposition de cuivre et procede de remplissage d'une cavite d'un substrat semi-conducteur utilisant cette composition

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KR20140053912A (ko) 2014-05-08
JP2014519201A (ja) 2014-08-07
CN103582942A (zh) 2014-02-12
TWI594387B (zh) 2017-08-01
US9368397B2 (en) 2016-06-14
US20140084474A1 (en) 2014-03-27
CA2836845A1 (en) 2012-11-29
CA2836845C (en) 2020-06-30
SG194863A1 (en) 2013-12-30
KR102014891B1 (ko) 2019-10-21
IL229519B (en) 2018-01-31
CN103582942B (zh) 2017-05-24
WO2012160063A1 (en) 2012-11-29
EP2528089A1 (en) 2012-11-28
EP2528089B1 (en) 2014-03-05
TW201304105A (zh) 2013-01-16
IL229519A0 (en) 2014-01-30

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