FR2943688B1 - Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur - Google Patents
Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteurInfo
- Publication number
- FR2943688B1 FR2943688B1 FR0901518A FR0901518A FR2943688B1 FR 2943688 B1 FR2943688 B1 FR 2943688B1 FR 0901518 A FR0901518 A FR 0901518A FR 0901518 A FR0901518 A FR 0901518A FR 2943688 B1 FR2943688 B1 FR 2943688B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor substrate
- electrochemical reaction
- realizing electrochemical
- realizing
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003487 electrochemical reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/22—Servicing or operating apparatus or multistep processes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/011—Electroplating using electromagnetic wave irradiation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/02—Electrolytic coating other than with metals with organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S204/00—Chemistry: electrical and wave energy
- Y10S204/07—Current distribution within the bath
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroluminescent Light Sources (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0901518A FR2943688B1 (fr) | 2009-03-27 | 2009-03-27 | Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur |
JP2012501312A JP5791590B2 (ja) | 2009-03-27 | 2010-03-25 | 半導体基板の表面において電気化学反応を実施するためのデバイスおよび方法 |
CN2010800136675A CN102362014A (zh) | 2009-03-27 | 2010-03-25 | 在半导体衬底的表面上实行电化学反应的装置及方法 |
EP10711213.8A EP2411568B1 (fr) | 2009-03-27 | 2010-03-25 | Dispositif et procédé de réalisation d'une réaction électrochimique sur une surface d'un substrat semi-conducteur |
KR1020117025471A KR101612441B1 (ko) | 2009-03-27 | 2010-03-25 | 반도체 기판의 표면에 전기화학 반응을 수행하는 장치 및 방법 |
US13/256,824 US8795503B2 (en) | 2009-03-27 | 2010-03-25 | Device and method to conduct an electrochemical reaction on a surface of a semi-conductor substrate |
CA2756509A CA2756509C (fr) | 2009-03-27 | 2010-03-25 | Dispositif et procede de realisation d'une reaction electrochimique sur une surface d'un substrat semi-conducteur |
SG2011068723A SG174524A1 (en) | 2009-03-27 | 2010-03-25 | Device and method to conduct an electrochemical reaction on a surface of a semiconductor substrate |
PCT/EP2010/053955 WO2010108996A1 (fr) | 2009-03-27 | 2010-03-25 | Dispositif et procédé de réalisation d'une réaction électrochimique sur une surface d'un substrat semi-conducteur |
TW099109124A TWI512814B (zh) | 2009-03-27 | 2010-03-26 | 在半導體基材表面上實行電化學反應之裝置及方法 |
IL215327A IL215327A (en) | 2009-03-27 | 2011-09-22 | Device and method for conducting electrochemical reaction on the surface of a semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0901518A FR2943688B1 (fr) | 2009-03-27 | 2009-03-27 | Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2943688A1 FR2943688A1 (fr) | 2010-10-01 |
FR2943688B1 true FR2943688B1 (fr) | 2012-07-20 |
Family
ID=41171026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0901518A Active FR2943688B1 (fr) | 2009-03-27 | 2009-03-27 | Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur |
Country Status (11)
Country | Link |
---|---|
US (1) | US8795503B2 (fr) |
EP (1) | EP2411568B1 (fr) |
JP (1) | JP5791590B2 (fr) |
KR (1) | KR101612441B1 (fr) |
CN (1) | CN102362014A (fr) |
CA (1) | CA2756509C (fr) |
FR (1) | FR2943688B1 (fr) |
IL (1) | IL215327A (fr) |
SG (1) | SG174524A1 (fr) |
TW (1) | TWI512814B (fr) |
WO (1) | WO2010108996A1 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2528089B1 (fr) * | 2011-05-23 | 2014-03-05 | Alchimer | Procédé pour la formation d'une connexion électrique verticale dans une structure semi-conductrice stratifiée |
FR2982877B1 (fr) | 2011-11-18 | 2014-10-03 | Alchimer | Machine adaptee pour metalliser une cavite d'un substrat semi-conducteur ou conducteur telle qu'une structure du type via traversant |
KR101449942B1 (ko) * | 2012-01-17 | 2014-10-17 | 주식회사 호진플라텍 | 전기도금 및 광 유도 도금을 병행하는 태양전지 기판용 도금장치 및 도금 방법 |
DE102012214925B3 (de) * | 2012-08-22 | 2013-10-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum lichtinduzierten oder lichtunterstützten Abscheiden von Metall auf einer Oberfläche eines Halbleiterbauelements sowie damit hergestelltes Halbleiterbauelement |
US10179955B2 (en) | 2012-08-31 | 2019-01-15 | Shin-Etsu Chemical Co., Ltd. | Production method for rare earth permanent magnet |
US10138564B2 (en) | 2012-08-31 | 2018-11-27 | Shin-Etsu Chemical Co., Ltd. | Production method for rare earth permanent magnet |
US10181377B2 (en) | 2012-08-31 | 2019-01-15 | Shin-Etsu Chemical Co., Ltd. | Production method for rare earth permanent magnet |
FR2998585B1 (fr) * | 2012-11-26 | 2014-12-19 | Univ Rennes | Procede de revetement d'un materiau organique ou metallique par des composes organiques par reduction electrochimique des ions diazonium desdits composes organiques, en courant pulse |
EP2746432A1 (fr) * | 2012-12-20 | 2014-06-25 | Atotech Deutschland GmbH | Dispositif de dépôt galvanique vertical de métal sur un substrat |
CN103173829A (zh) * | 2013-04-19 | 2013-06-26 | 济南大学 | 一种电化学沉积制备碲化镉半导体薄膜的方法 |
JP6191497B2 (ja) * | 2014-02-19 | 2017-09-06 | 信越化学工業株式会社 | 電着装置及び希土類永久磁石の製造方法 |
JP6090589B2 (ja) | 2014-02-19 | 2017-03-08 | 信越化学工業株式会社 | 希土類永久磁石の製造方法 |
FR3045676A1 (fr) * | 2015-12-16 | 2017-06-23 | Aveni | Cellule pour une reaction chimique a faibles volumes morts |
EP3413340B1 (fr) * | 2017-06-08 | 2021-11-17 | Brooks Automation (Germany) GmbH | Methode d'inspection d'un conteneur et systeme d'inspection |
CN112975592B (zh) * | 2021-03-29 | 2022-02-15 | 中国电子科技集团公司第十三研究所 | 一种磷化铟衬底的抛光工艺 |
FR3125811A1 (fr) * | 2021-07-28 | 2023-02-03 | Silimixt | Dispositif de traitement electrochimique dote d’un systeme d’eclairage |
CN117305958B (zh) * | 2023-10-18 | 2024-05-14 | 河南恒创能科金属制品有限公司 | 一种金刚丝母线加工处理用装置及其加工处理方法 |
Family Cites Families (21)
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US4247373A (en) * | 1978-06-20 | 1981-01-27 | Matsushita Electric Industrial Co., Ltd. | Method of making semiconductor device |
US4304641A (en) * | 1980-11-24 | 1981-12-08 | International Business Machines Corporation | Rotary electroplating cell with controlled current distribution |
US4507181A (en) * | 1984-02-17 | 1985-03-26 | Energy Conversion Devices, Inc. | Method of electro-coating a semiconductor device |
US6328858B1 (en) | 1998-10-01 | 2001-12-11 | Nexx Systems Packaging, Llc | Multi-layer sputter deposition apparatus |
WO2000037206A2 (fr) | 1998-12-23 | 2000-06-29 | Applied Science And Technology, Inc. | Source de plasma ecr a aimants permanents assurant le confinement magnetique multipolaire integre |
US6193860B1 (en) * | 1999-04-23 | 2001-02-27 | Vlsi Technolgy, Inc. | Method and apparatus for improved copper plating uniformity on a semiconductor wafer using optimized electrical currents |
JP3492554B2 (ja) * | 1999-05-07 | 2004-02-03 | ニシハラ理工株式会社 | Pbに代わる接合材料の機能合金メッキ及びその機能合金メッキを施した被実装用電子部品材料 |
US6530733B2 (en) | 2000-07-27 | 2003-03-11 | Nexx Systems Packaging, Llc | Substrate processing pallet and related substrate processing method and machine |
US6682288B2 (en) | 2000-07-27 | 2004-01-27 | Nexx Systems Packaging, Llc | Substrate processing pallet and related substrate processing method and machine |
US6821912B2 (en) | 2000-07-27 | 2004-11-23 | Nexx Systems Packaging, Llc | Substrate processing pallet and related substrate processing method and machine |
JP4172149B2 (ja) * | 2000-09-22 | 2008-10-29 | 富士ゼロックス株式会社 | 低電位電着用電着液及びこれを用いた電着方法 |
US7100954B2 (en) | 2003-07-11 | 2006-09-05 | Nexx Systems, Inc. | Ultra-thin wafer handling system |
US7250104B2 (en) * | 2003-08-08 | 2007-07-31 | Novellus Systems, Inc. | Method and system for optically enhanced metal planarization |
JP4642771B2 (ja) | 2003-10-22 | 2011-03-02 | ネックス システムズ インコーポレイテッド | ワークピースを流体処理する方法及び装置 |
TWI415968B (zh) * | 2005-11-23 | 2013-11-21 | Applied Materials Inc | 用於在微特徵工件之濕式化學製程中攪動液體的裝置與方法 |
WO2007099218A1 (fr) | 2006-02-28 | 2007-09-07 | Commissariat A L'energie Atomique | Procede de formation de films organiques sur des surfaces conductrices ou semi-conductrices de l'electricite a partir de solutions aqueuses |
US20070256937A1 (en) * | 2006-05-04 | 2007-11-08 | International Business Machines Corporation | Apparatus and method for electrochemical processing of thin films on resistive substrates |
US20080035489A1 (en) * | 2006-06-05 | 2008-02-14 | Rohm And Haas Electronic Materials Llc | Plating process |
US7935230B2 (en) * | 2006-06-29 | 2011-05-03 | Semitool, Inc. | Electro-chemical processor |
JP4933175B2 (ja) | 2006-07-05 | 2012-05-16 | ネックス システムズ インコーポレイテッド | ワークピースを流体処理する方法及び装置 |
FR2921516B1 (fr) * | 2007-09-20 | 2010-03-12 | Commissariat Energie Atomique | Procede d'electrogreffage localise sur des substrats semi-conducteurs photosensibles |
-
2009
- 2009-03-27 FR FR0901518A patent/FR2943688B1/fr active Active
-
2010
- 2010-03-25 SG SG2011068723A patent/SG174524A1/en unknown
- 2010-03-25 JP JP2012501312A patent/JP5791590B2/ja active Active
- 2010-03-25 CN CN2010800136675A patent/CN102362014A/zh active Pending
- 2010-03-25 EP EP10711213.8A patent/EP2411568B1/fr active Active
- 2010-03-25 US US13/256,824 patent/US8795503B2/en active Active
- 2010-03-25 WO PCT/EP2010/053955 patent/WO2010108996A1/fr active Application Filing
- 2010-03-25 KR KR1020117025471A patent/KR101612441B1/ko active IP Right Grant
- 2010-03-25 CA CA2756509A patent/CA2756509C/fr active Active
- 2010-03-26 TW TW099109124A patent/TWI512814B/zh active
-
2011
- 2011-09-22 IL IL215327A patent/IL215327A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2756509A1 (fr) | 2010-09-30 |
FR2943688A1 (fr) | 2010-10-01 |
IL215327A (en) | 2016-02-29 |
KR20120006518A (ko) | 2012-01-18 |
KR101612441B1 (ko) | 2016-04-14 |
WO2010108996A1 (fr) | 2010-09-30 |
TW201044454A (en) | 2010-12-16 |
EP2411568B1 (fr) | 2015-11-04 |
CA2756509C (fr) | 2016-08-23 |
EP2411568A1 (fr) | 2012-02-01 |
JP2012522126A (ja) | 2012-09-20 |
JP5791590B2 (ja) | 2015-10-07 |
IL215327A0 (en) | 2011-12-29 |
SG174524A1 (en) | 2011-10-28 |
CN102362014A (zh) | 2012-02-22 |
US20120000785A1 (en) | 2012-01-05 |
US8795503B2 (en) | 2014-08-05 |
TWI512814B (zh) | 2015-12-11 |
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