FR2943688B1 - Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur - Google Patents

Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur

Info

Publication number
FR2943688B1
FR2943688B1 FR0901518A FR0901518A FR2943688B1 FR 2943688 B1 FR2943688 B1 FR 2943688B1 FR 0901518 A FR0901518 A FR 0901518A FR 0901518 A FR0901518 A FR 0901518A FR 2943688 B1 FR2943688 B1 FR 2943688B1
Authority
FR
France
Prior art keywords
semiconductor substrate
electrochemical reaction
realizing electrochemical
realizing
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0901518A
Other languages
English (en)
Other versions
FR2943688A1 (fr
Inventor
Said Zahraoui
Francis Descours
Frederic Raynal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alchimer SA
Original Assignee
Alchimer SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0901518A priority Critical patent/FR2943688B1/fr
Application filed by Alchimer SA filed Critical Alchimer SA
Priority to CA2756509A priority patent/CA2756509C/fr
Priority to SG2011068723A priority patent/SG174524A1/en
Priority to CN2010800136675A priority patent/CN102362014A/zh
Priority to EP10711213.8A priority patent/EP2411568B1/fr
Priority to KR1020117025471A priority patent/KR101612441B1/ko
Priority to US13/256,824 priority patent/US8795503B2/en
Priority to PCT/EP2010/053955 priority patent/WO2010108996A1/fr
Priority to JP2012501312A priority patent/JP5791590B2/ja
Priority to TW099109124A priority patent/TWI512814B/zh
Publication of FR2943688A1 publication Critical patent/FR2943688A1/fr
Priority to IL215327A priority patent/IL215327A/en
Application granted granted Critical
Publication of FR2943688B1 publication Critical patent/FR2943688B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00Electrophoretic coating characterised by the process
    • C25D13/22Servicing or operating apparatus or multistep processes
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/011Electroplating using electromagnetic wave irradiation
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00Electrolytic coating other than with metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00Electrolytic coating other than with metals
    • C25D9/02Electrolytic coating other than with metals with organic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00Chemistry: electrical and wave energy
    • Y10S204/07Current distribution within the bath

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
FR0901518A 2009-03-27 2009-03-27 Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur Active FR2943688B1 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FR0901518A FR2943688B1 (fr) 2009-03-27 2009-03-27 Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur
JP2012501312A JP5791590B2 (ja) 2009-03-27 2010-03-25 半導体基板の表面において電気化学反応を実施するためのデバイスおよび方法
CN2010800136675A CN102362014A (zh) 2009-03-27 2010-03-25 在半导体衬底的表面上实行电化学反应的装置及方法
EP10711213.8A EP2411568B1 (fr) 2009-03-27 2010-03-25 Dispositif et procédé de réalisation d'une réaction électrochimique sur une surface d'un substrat semi-conducteur
KR1020117025471A KR101612441B1 (ko) 2009-03-27 2010-03-25 반도체 기판의 표면에 전기화학 반응을 수행하는 장치 및 방법
US13/256,824 US8795503B2 (en) 2009-03-27 2010-03-25 Device and method to conduct an electrochemical reaction on a surface of a semi-conductor substrate
CA2756509A CA2756509C (fr) 2009-03-27 2010-03-25 Dispositif et procede de realisation d'une reaction electrochimique sur une surface d'un substrat semi-conducteur
SG2011068723A SG174524A1 (en) 2009-03-27 2010-03-25 Device and method to conduct an electrochemical reaction on a surface of a semiconductor substrate
PCT/EP2010/053955 WO2010108996A1 (fr) 2009-03-27 2010-03-25 Dispositif et procédé de réalisation d'une réaction électrochimique sur une surface d'un substrat semi-conducteur
TW099109124A TWI512814B (zh) 2009-03-27 2010-03-26 在半導體基材表面上實行電化學反應之裝置及方法
IL215327A IL215327A (en) 2009-03-27 2011-09-22 Device and method for conducting electrochemical reaction on the surface of a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0901518A FR2943688B1 (fr) 2009-03-27 2009-03-27 Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur

Publications (2)

Publication Number Publication Date
FR2943688A1 FR2943688A1 (fr) 2010-10-01
FR2943688B1 true FR2943688B1 (fr) 2012-07-20

Family

ID=41171026

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0901518A Active FR2943688B1 (fr) 2009-03-27 2009-03-27 Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur

Country Status (11)

Country Link
US (1) US8795503B2 (fr)
EP (1) EP2411568B1 (fr)
JP (1) JP5791590B2 (fr)
KR (1) KR101612441B1 (fr)
CN (1) CN102362014A (fr)
CA (1) CA2756509C (fr)
FR (1) FR2943688B1 (fr)
IL (1) IL215327A (fr)
SG (1) SG174524A1 (fr)
TW (1) TWI512814B (fr)
WO (1) WO2010108996A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2528089B1 (fr) * 2011-05-23 2014-03-05 Alchimer Procédé pour la formation d'une connexion électrique verticale dans une structure semi-conductrice stratifiée
FR2982877B1 (fr) 2011-11-18 2014-10-03 Alchimer Machine adaptee pour metalliser une cavite d'un substrat semi-conducteur ou conducteur telle qu'une structure du type via traversant
KR101449942B1 (ko) * 2012-01-17 2014-10-17 주식회사 호진플라텍 전기도금 및 광 유도 도금을 병행하는 태양전지 기판용 도금장치 및 도금 방법
DE102012214925B3 (de) * 2012-08-22 2013-10-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum lichtinduzierten oder lichtunterstützten Abscheiden von Metall auf einer Oberfläche eines Halbleiterbauelements sowie damit hergestelltes Halbleiterbauelement
US10179955B2 (en) 2012-08-31 2019-01-15 Shin-Etsu Chemical Co., Ltd. Production method for rare earth permanent magnet
US10138564B2 (en) 2012-08-31 2018-11-27 Shin-Etsu Chemical Co., Ltd. Production method for rare earth permanent magnet
US10181377B2 (en) 2012-08-31 2019-01-15 Shin-Etsu Chemical Co., Ltd. Production method for rare earth permanent magnet
FR2998585B1 (fr) * 2012-11-26 2014-12-19 Univ Rennes Procede de revetement d'un materiau organique ou metallique par des composes organiques par reduction electrochimique des ions diazonium desdits composes organiques, en courant pulse
EP2746432A1 (fr) * 2012-12-20 2014-06-25 Atotech Deutschland GmbH Dispositif de dépôt galvanique vertical de métal sur un substrat
CN103173829A (zh) * 2013-04-19 2013-06-26 济南大学 一种电化学沉积制备碲化镉半导体薄膜的方法
JP6191497B2 (ja) * 2014-02-19 2017-09-06 信越化学工業株式会社 電着装置及び希土類永久磁石の製造方法
JP6090589B2 (ja) 2014-02-19 2017-03-08 信越化学工業株式会社 希土類永久磁石の製造方法
FR3045676A1 (fr) * 2015-12-16 2017-06-23 Aveni Cellule pour une reaction chimique a faibles volumes morts
EP3413340B1 (fr) * 2017-06-08 2021-11-17 Brooks Automation (Germany) GmbH Methode d'inspection d'un conteneur et systeme d'inspection
CN112975592B (zh) * 2021-03-29 2022-02-15 中国电子科技集团公司第十三研究所 一种磷化铟衬底的抛光工艺
FR3125811A1 (fr) * 2021-07-28 2023-02-03 Silimixt Dispositif de traitement electrochimique dote d’un systeme d’eclairage
CN117305958B (zh) * 2023-10-18 2024-05-14 河南恒创能科金属制品有限公司 一种金刚丝母线加工处理用装置及其加工处理方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247373A (en) * 1978-06-20 1981-01-27 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor device
US4304641A (en) * 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
US4507181A (en) * 1984-02-17 1985-03-26 Energy Conversion Devices, Inc. Method of electro-coating a semiconductor device
US6328858B1 (en) 1998-10-01 2001-12-11 Nexx Systems Packaging, Llc Multi-layer sputter deposition apparatus
WO2000037206A2 (fr) 1998-12-23 2000-06-29 Applied Science And Technology, Inc. Source de plasma ecr a aimants permanents assurant le confinement magnetique multipolaire integre
US6193860B1 (en) * 1999-04-23 2001-02-27 Vlsi Technolgy, Inc. Method and apparatus for improved copper plating uniformity on a semiconductor wafer using optimized electrical currents
JP3492554B2 (ja) * 1999-05-07 2004-02-03 ニシハラ理工株式会社 Pbに代わる接合材料の機能合金メッキ及びその機能合金メッキを施した被実装用電子部品材料
US6530733B2 (en) 2000-07-27 2003-03-11 Nexx Systems Packaging, Llc Substrate processing pallet and related substrate processing method and machine
US6682288B2 (en) 2000-07-27 2004-01-27 Nexx Systems Packaging, Llc Substrate processing pallet and related substrate processing method and machine
US6821912B2 (en) 2000-07-27 2004-11-23 Nexx Systems Packaging, Llc Substrate processing pallet and related substrate processing method and machine
JP4172149B2 (ja) * 2000-09-22 2008-10-29 富士ゼロックス株式会社 低電位電着用電着液及びこれを用いた電着方法
US7100954B2 (en) 2003-07-11 2006-09-05 Nexx Systems, Inc. Ultra-thin wafer handling system
US7250104B2 (en) * 2003-08-08 2007-07-31 Novellus Systems, Inc. Method and system for optically enhanced metal planarization
JP4642771B2 (ja) 2003-10-22 2011-03-02 ネックス システムズ インコーポレイテッド ワークピースを流体処理する方法及び装置
TWI415968B (zh) * 2005-11-23 2013-11-21 Applied Materials Inc 用於在微特徵工件之濕式化學製程中攪動液體的裝置與方法
WO2007099218A1 (fr) 2006-02-28 2007-09-07 Commissariat A L'energie Atomique Procede de formation de films organiques sur des surfaces conductrices ou semi-conductrices de l'electricite a partir de solutions aqueuses
US20070256937A1 (en) * 2006-05-04 2007-11-08 International Business Machines Corporation Apparatus and method for electrochemical processing of thin films on resistive substrates
US20080035489A1 (en) * 2006-06-05 2008-02-14 Rohm And Haas Electronic Materials Llc Plating process
US7935230B2 (en) * 2006-06-29 2011-05-03 Semitool, Inc. Electro-chemical processor
JP4933175B2 (ja) 2006-07-05 2012-05-16 ネックス システムズ インコーポレイテッド ワークピースを流体処理する方法及び装置
FR2921516B1 (fr) * 2007-09-20 2010-03-12 Commissariat Energie Atomique Procede d'electrogreffage localise sur des substrats semi-conducteurs photosensibles

Also Published As

Publication number Publication date
CA2756509A1 (fr) 2010-09-30
FR2943688A1 (fr) 2010-10-01
IL215327A (en) 2016-02-29
KR20120006518A (ko) 2012-01-18
KR101612441B1 (ko) 2016-04-14
WO2010108996A1 (fr) 2010-09-30
TW201044454A (en) 2010-12-16
EP2411568B1 (fr) 2015-11-04
CA2756509C (fr) 2016-08-23
EP2411568A1 (fr) 2012-02-01
JP2012522126A (ja) 2012-09-20
JP5791590B2 (ja) 2015-10-07
IL215327A0 (en) 2011-12-29
SG174524A1 (en) 2011-10-28
CN102362014A (zh) 2012-02-22
US20120000785A1 (en) 2012-01-05
US8795503B2 (en) 2014-08-05
TWI512814B (zh) 2015-12-11

Similar Documents

Publication Publication Date Title
FR2943688B1 (fr) Dispositif et procede pour realiser une reaction electrochimique sur une surface d'un substrat semi-conducteur
FR2950062B1 (fr) Solution et procede d'activation de la surface d'un substrat semi-conducteur
FR2957716B1 (fr) Procede de finition d'un substrat de type semi-conducteur sur isolant
FR2950634B1 (fr) Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur
FR2936605B1 (fr) Dispositif d'analyse de la surface d'un substrat
FR2914422B1 (fr) Procede de detection de defauts de surface d'un substrat et dispositif mettant en oeuvre ledit procede.
TW200610587A (en) Method for dispensing a fluid on a substrate
FR2944986B1 (fr) Procede de polissage mecano-chimique d'un substrat
EP1715510A4 (fr) Liquide de nettoyage pour substrat pour dispositif semi-conducteur et procede de nettoyage
FR2944645B1 (fr) Procede d'amincissement d'un substrat silicium sur isolant
FR2978603B1 (fr) Procede de transfert d'une couche semi-conductrice monocristalline sur un substrat support
FR2949276B1 (fr) Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire
EP2175479A4 (fr) Procédé de traitement d'une surface de substrat semi-conducteur et dispositif de traitement chimique pour la surface de substrat semi-conducteur
FR2930785B1 (fr) Composition d'electrodeposition et procede de revetement d'un substrat semi-conducteur utilisant ladite composition
FR2950080B1 (fr) Procede et dispositif de depot chimique en phase gazeuse d'un film polymere sur un substrat
FR2943458B1 (fr) Procede de finition d'un substrat de type "silicium sur isolant" soi
FR2926162B1 (fr) Procede de modification localisee de l'energie de surface d'un substrat
FR2918793B1 (fr) Procede de fabrication d'un substrat semiconducteur-sur- isolant pour la microelectronique et l'optoelectronique.
FR2964973B1 (fr) Composition de polissage mecano-chimique concentrable stabilisee et procede de polissage d'un substrat l'utilisant
FR2936095B1 (fr) Procede de fabrication d'un dispositif microelectronique dote de zones semi-conductrices sur isolant a gradient horizontal de concentration en ge.
FR2960083B1 (fr) Dispositif sur un substrat semi-conducteur pour une installation rfid ainsi qu'un procede de fabrication
FR2935291B1 (fr) Dispositif et procede pour le thermocollage d'un revetement souple sur un support
FR2941302B1 (fr) Procede de test sur le substrat support d'un substrat de type "semi-conducteur sur isolant".
FR2961214B1 (fr) Composition de polissage chimico-mecanique stabilisee et procede de polissage d'un substrat
GB0602410D0 (en) A method of bonding a semiconductor wafer to a support substrate

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

PLFP Fee payment

Year of fee payment: 16