JP6338533B2 - 光電子モジュール、特にフラッシュモジュールおよびそれらの製造方法 - Google Patents

光電子モジュール、特にフラッシュモジュールおよびそれらの製造方法 Download PDF

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JP6338533B2
JP6338533B2 JP2014547757A JP2014547757A JP6338533B2 JP 6338533 B2 JP6338533 B2 JP 6338533B2 JP 2014547757 A JP2014547757 A JP 2014547757A JP 2014547757 A JP2014547757 A JP 2014547757A JP 6338533 B2 JP6338533 B2 JP 6338533B2
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light emitting
light
wafer
optical
optoelectronic module
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JP2015508509A5 (enExample
JP2015508509A (ja
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ラドマン，ハルトムート
ロッシ，マルクス
クロムホフ，ルネ
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Ams Sensors Singapore Pte Ltd
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Heptagon Micro Optics Pte Ltd
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Stroboscope Apparatuses (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Exposure Control For Cameras (AREA)
JP2014547757A 2011-12-22 2012-12-18 光電子モジュール、特にフラッシュモジュールおよびそれらの製造方法 Active JP6338533B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161579293P 2011-12-22 2011-12-22
US61/579,293 2011-12-22
PCT/EP2012/005223 WO2013091829A1 (en) 2011-12-22 2012-12-18 Opto-electronic modules, in particular flash modules, and method for manufacturing the same

Publications (3)

Publication Number Publication Date
JP2015508509A JP2015508509A (ja) 2015-03-19
JP2015508509A5 JP2015508509A5 (enExample) 2016-02-12
JP6338533B2 true JP6338533B2 (ja) 2018-06-06

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US (1) US10431571B2 (enExample)
EP (1) EP2795674B1 (enExample)
JP (1) JP6338533B2 (enExample)
KR (1) KR102177372B1 (enExample)
CN (1) CN104106135B (enExample)
SG (2) SG10201605065QA (enExample)
TW (1) TWI590415B (enExample)
WO (1) WO2013091829A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2870240B2 (ja) 1991-08-09 1999-03-17 株式会社デンソー 内燃機関の空燃比制御装置

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