JP6329428B2 - 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体 - Google Patents

基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体 Download PDF

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JP6329428B2
JP6329428B2 JP2014098039A JP2014098039A JP6329428B2 JP 6329428 B2 JP6329428 B2 JP 6329428B2 JP 2014098039 A JP2014098039 A JP 2014098039A JP 2014098039 A JP2014098039 A JP 2014098039A JP 6329428 B2 JP6329428 B2 JP 6329428B2
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Japan
Prior art keywords
substrate
liquid
cover member
wafer
treatment
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JP2014098039A
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Japanese (ja)
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JP2015216224A (ja
JP2015216224A5 (https=
Inventor
剛資 水野
剛資 水野
容一 徳永
容一 徳永
難波　宏光
宏光 難波
達博 植木
達博 植木
フィトリアント
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to JP2014098039A priority Critical patent/JP6329428B2/ja
Priority to TW104113691A priority patent/TWI602231B/zh
Priority to KR1020150063823A priority patent/KR102354226B1/ko
Priority to US14/707,145 priority patent/US20150323250A1/en
Publication of JP2015216224A publication Critical patent/JP2015216224A/ja
Publication of JP2015216224A5 publication Critical patent/JP2015216224A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/18—Drying solid materials or objects by processes involving the application of heat by conduction, i.e. the heat is conveyed from the heat source, e.g. gas flame, to the materials or objects to be dried by direct contact
    • F26B3/20—Drying solid materials or objects by processes involving the application of heat by conduction, i.e. the heat is conveyed from the heat source, e.g. gas flame, to the materials or objects to be dried by direct contact the heat source being a heated surface, e.g. a moving belt or conveyor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microbiology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
JP2014098039A 2014-05-09 2014-05-09 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体 Active JP6329428B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014098039A JP6329428B2 (ja) 2014-05-09 2014-05-09 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体
TW104113691A TWI602231B (zh) 2014-05-09 2015-04-29 A substrate processing apparatus, a deposit removal method for a substrate processing apparatus, and a storage medium
KR1020150063823A KR102354226B1 (ko) 2014-05-09 2015-05-07 기판 처리 장치, 기판 처리 장치의 부착물 제거 방법 및 기억 매체
US14/707,145 US20150323250A1 (en) 2014-05-09 2015-05-08 Substrate processing apparatus, deposit removing method of substrate processing apparatus and recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014098039A JP6329428B2 (ja) 2014-05-09 2014-05-09 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2015216224A JP2015216224A (ja) 2015-12-03
JP2015216224A5 JP2015216224A5 (https=) 2016-12-28
JP6329428B2 true JP6329428B2 (ja) 2018-05-23

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JP2014098039A Active JP6329428B2 (ja) 2014-05-09 2014-05-09 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体

Country Status (4)

Country Link
US (1) US20150323250A1 (https=)
JP (1) JP6329428B2 (https=)
KR (1) KR102354226B1 (https=)
TW (1) TWI602231B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6584356B2 (ja) * 2016-03-30 2019-10-02 東京エレクトロン株式会社 基板処理装置及び基板処理装置の処理方法
JP6833548B2 (ja) * 2016-06-30 2021-02-24 キヤノン株式会社 搬送システム、搬送方法、パターン形成装置、及び物品の製造方法
JP6925185B2 (ja) * 2017-06-30 2021-08-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6980457B2 (ja) * 2017-08-23 2021-12-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
KR20250005423A (ko) * 2018-01-23 2025-01-09 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP7144982B2 (ja) * 2018-06-22 2022-09-30 東京エレクトロン株式会社 基板処理装置
JP7117392B2 (ja) * 2018-11-16 2022-08-12 東京エレクトロン株式会社 基板処理装置及び基板処理装置の洗浄方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07230954A (ja) * 1994-02-16 1995-08-29 Mitsubishi Electric Corp プラズマ処理装置及びプラズマ処理装置におけるクリーニング方法
US6179915B1 (en) * 1998-11-17 2001-01-30 Promos Technology, Inc On track coater unit cup set
JP2002141326A (ja) * 2000-11-01 2002-05-17 Hitachi Ltd 板状試料の流体処理方法ならびにその装置
JP2002334823A (ja) * 2001-05-08 2002-11-22 Matsushita Electric Ind Co Ltd ベーク方法、ベーク装置及び液晶表示素子の製造方法
US20030010091A1 (en) * 2001-07-10 2003-01-16 Mitchell Bradley Dale System and method for detecting occlusions in a semiconductor manufacturing device
JP5109376B2 (ja) * 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
JP2010150080A (ja) * 2008-12-25 2010-07-08 Disco Abrasive Syst Ltd シリコンブロックの処理方法
JP5437168B2 (ja) * 2009-08-07 2014-03-12 東京エレクトロン株式会社 基板の液処理装置および液処理方法
KR101590661B1 (ko) * 2010-09-13 2016-02-01 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체
JP5606992B2 (ja) * 2011-06-09 2014-10-15 東京エレクトロン株式会社 液処理装置および液処理方法
US20130008602A1 (en) * 2011-07-07 2013-01-10 Lam Research Ag Apparatus for treating a wafer-shaped article
JP5522144B2 (ja) * 2011-10-25 2014-06-18 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
JP5693438B2 (ja) * 2011-12-16 2015-04-01 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP5996381B2 (ja) * 2011-12-28 2016-09-21 東京エレクトロン株式会社 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
JP2015216224A (ja) 2015-12-03
TWI602231B (zh) 2017-10-11
TW201612966A (en) 2016-04-01
KR102354226B1 (ko) 2022-01-21
US20150323250A1 (en) 2015-11-12
KR20150128596A (ko) 2015-11-18

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