JP2013038184A - 液処理装置 - Google Patents
液処理装置 Download PDFInfo
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- JP2013038184A JP2013038184A JP2011172158A JP2011172158A JP2013038184A JP 2013038184 A JP2013038184 A JP 2013038184A JP 2011172158 A JP2011172158 A JP 2011172158A JP 2011172158 A JP2011172158 A JP 2011172158A JP 2013038184 A JP2013038184 A JP 2013038184A
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- 239000007788 liquid Substances 0.000 title claims abstract description 354
- 238000004140 cleaning Methods 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 230000002093 peripheral effect Effects 0.000 claims description 68
- 239000012530 fluid Substances 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 41
- 239000000126 substance Substances 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 49
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 48
- 238000003860 storage Methods 0.000 description 28
- 239000007789 gas Substances 0.000 description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 19
- 239000000243 solution Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 7
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- 239000003517 fume Substances 0.000 description 7
- 239000003595 mist Substances 0.000 description 7
- 230000003028 elevating effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 3
- 230000001174 ascending effect Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】液処理装置は、基板(W)を水平に保持して回転させる基板保持部(21)と、基板保持部に保持された基板に対して処理液を供給する処理液ノズル(82)と、基板保持部に保持されたときの基板の周縁の外方に位置するよう設けられた、処理液ノズルにより基板に供給された後の処理液を受けるためのカップ(40)と、基板保持部に保持された基板を上方から覆う天板(32)と、天板を回転させる天板回転駆動機構と、天板の周縁を囲んで天板の外方に位置するように設けられ、天板から飛散する液体を受ける環状の液受け空間(132)を有する液受け部材(130)とを備えている。
【選択図】図6B
Description
21 基板保持部
32 天板
40 カップ(回転カップ)
50 カップ外周筒
82 処理液ノズル
130,130A 液受け部材
132,132A 液受け空間
137c 排出管
137b 吸引機構(イジェクタ)
140 整流板
141 (天板と整流板の間の)空間
Claims (9)
- 基板を水平に保持して回転させる基板保持部と、
前記基板保持部に保持された基板に対して処理液を供給する処理液ノズルと、
前記基板保持部に保持されたときの基板の周縁の外方に位置するよう設けられた、前記処理液ノズルにより基板に供給された後の処理液を受けるためのカップと、
前記基板保持部に保持された基板を上方から覆う天板と、
前記天板を回転させる天板回転駆動機構と、
前記天板の周縁を囲んで前記天板の外方に位置するように設けられ、前記天板から飛散する液体を受ける環状の液受け空間を有する液受け部材と、
を備えた液処理装置。 - 前記液受け空間に接続され、前記液受け空間内の流体を排出するための少なくとも1つの排出管をさらに備えた、請求項1に記載の液処理装置。
- 前記排出管に吸引機構が接続されている、請求項2に記載の液処理装置。
- 前記天板の上方に設けられた整流板をさらに備え、前記整流板は前記天板と前記整流板との間に空間が形成されるように前記天板の上方を覆っており、前記吸引機構が前記液受け空間を吸引することにより、前記天板と前記整流板との間の前記空間が吸引されるように構成されている、請求項3に記載の液処理装置。
- 前記天板および前記液受け部材は共通の支持部材により支持されて一緒に移動するように設けられている、請求項1から4のうちのいずれか一項に記載の液処理装置。
- 前記液受け部材は前記支持部材に回転不能に固定されている、請求項5に記載の液処理装置。
- 前記天板の下面に洗浄液を供給する天板洗浄ノズルをさらに備えた、請求項1から6のうちのいずれか一項に記載の液処理装置。
- 前記カップの周囲に配設され、その上端が前記カップの上方にある上昇位置と、前記上昇位置よりも下方に位置する下降位置との間で昇降自在に設けられ、上部に上部開口が形成された筒状のカップ外周筒を更に備え、
前記液受け部材が前記カップ外周筒の上端に近接または密接したときに、前記カップ外周筒および前記天板により囲まれた閉鎖空間が形成される、請求項1から7のうちのいずれか一項に記載の液処理装置。 - 前記液受け部材は前記天板と一緒に回転するように前記天板に結合されている、請求項1に記載の液処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011172158A JP5496966B2 (ja) | 2011-08-05 | 2011-08-05 | 液処理装置 |
TW101127296A TWI517209B (zh) | 2011-08-05 | 2012-07-27 | 液體處理裝置 |
PCT/JP2012/069551 WO2013021883A1 (ja) | 2011-08-05 | 2012-08-01 | 液処理装置 |
US13/823,205 US9768010B2 (en) | 2011-08-05 | 2012-08-01 | Liquid treatment apparatus |
KR1020137006440A KR101751568B1 (ko) | 2011-08-05 | 2012-08-01 | 액처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011172158A JP5496966B2 (ja) | 2011-08-05 | 2011-08-05 | 液処理装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014041489A Division JP5795396B2 (ja) | 2014-03-04 | 2014-03-04 | 液処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013038184A true JP2013038184A (ja) | 2013-02-21 |
JP5496966B2 JP5496966B2 (ja) | 2014-05-21 |
Family
ID=47668393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011172158A Active JP5496966B2 (ja) | 2011-08-05 | 2011-08-05 | 液処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9768010B2 (ja) |
JP (1) | JP5496966B2 (ja) |
KR (1) | KR101751568B1 (ja) |
TW (1) | TWI517209B (ja) |
WO (1) | WO2013021883A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023058317A1 (ja) * | 2021-10-08 | 2023-04-13 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9805946B2 (en) * | 2013-08-30 | 2017-10-31 | Taiwan Semiconductor Manufacturing Company Limited | Photoresist removal |
JP6027523B2 (ja) * | 2013-12-05 | 2016-11-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに基板処理プログラムを記録した記録媒体 |
JP6523643B2 (ja) * | 2014-09-29 | 2019-06-05 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
TWI661479B (zh) * | 2015-02-12 | 2019-06-01 | 日商思可林集團股份有限公司 | 基板處理裝置、基板處理系統以及基板處理方法 |
WO2019069386A1 (ja) | 2017-10-03 | 2019-04-11 | 日本たばこ産業株式会社 | フィルタ付き喫煙物品 |
JP6955971B2 (ja) * | 2017-11-10 | 2021-10-27 | 株式会社ディスコ | 洗浄ノズル |
JP7110053B2 (ja) * | 2018-09-27 | 2022-08-01 | 東京エレクトロン株式会社 | 基板処理装置 |
US11532494B2 (en) | 2020-11-11 | 2022-12-20 | Service Support Specialties, Inc. | System for coating a substrate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817707A (ja) * | 1994-06-28 | 1996-01-19 | Dainippon Screen Mfg Co Ltd | 回転塗布装置 |
JP2005005302A (ja) * | 2003-06-09 | 2005-01-06 | Sharp Corp | 半導体製造方法および製造装置 |
JP2007035866A (ja) * | 2005-07-26 | 2007-02-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2009218404A (ja) * | 2008-03-11 | 2009-09-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2009267101A (ja) * | 2008-04-25 | 2009-11-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10209102A (ja) * | 1997-01-17 | 1998-08-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP3741546B2 (ja) | 1998-08-27 | 2006-02-01 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4053800B2 (ja) | 2002-03-25 | 2008-02-27 | 東京エレクトロン株式会社 | 基板処理装置 |
TWI261875B (en) | 2002-01-30 | 2006-09-11 | Tokyo Electron Ltd | Processing apparatus and substrate processing method |
JP4570008B2 (ja) * | 2002-04-16 | 2010-10-27 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP4191009B2 (ja) | 2003-11-05 | 2008-12-03 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP4446875B2 (ja) * | 2004-06-14 | 2010-04-07 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP5604371B2 (ja) * | 2011-06-09 | 2014-10-08 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
KR101668139B1 (ko) * | 2011-07-12 | 2016-10-20 | 도쿄엘렉트론가부시키가이샤 | 액처리 장치 및 액처리 방법 |
-
2011
- 2011-08-05 JP JP2011172158A patent/JP5496966B2/ja active Active
-
2012
- 2012-07-27 TW TW101127296A patent/TWI517209B/zh not_active IP Right Cessation
- 2012-08-01 WO PCT/JP2012/069551 patent/WO2013021883A1/ja active Application Filing
- 2012-08-01 KR KR1020137006440A patent/KR101751568B1/ko active IP Right Grant
- 2012-08-01 US US13/823,205 patent/US9768010B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817707A (ja) * | 1994-06-28 | 1996-01-19 | Dainippon Screen Mfg Co Ltd | 回転塗布装置 |
JP2005005302A (ja) * | 2003-06-09 | 2005-01-06 | Sharp Corp | 半導体製造方法および製造装置 |
JP2007035866A (ja) * | 2005-07-26 | 2007-02-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2009218404A (ja) * | 2008-03-11 | 2009-09-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2009267101A (ja) * | 2008-04-25 | 2009-11-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023058317A1 (ja) * | 2021-10-08 | 2023-04-13 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2013021883A1 (ja) | 2013-02-14 |
KR101751568B1 (ko) | 2017-06-27 |
TWI517209B (zh) | 2016-01-11 |
JP5496966B2 (ja) | 2014-05-21 |
US20130180659A1 (en) | 2013-07-18 |
US9768010B2 (en) | 2017-09-19 |
TW201322308A (zh) | 2013-06-01 |
KR20140045904A (ko) | 2014-04-17 |
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