JP6318938B2 - 単結晶の製造方法及び製造装置 - Google Patents
単結晶の製造方法及び製造装置 Download PDFInfo
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- JP6318938B2 JP6318938B2 JP2014147114A JP2014147114A JP6318938B2 JP 6318938 B2 JP6318938 B2 JP 6318938B2 JP 2014147114 A JP2014147114 A JP 2014147114A JP 2014147114 A JP2014147114 A JP 2014147114A JP 6318938 B2 JP6318938 B2 JP 6318938B2
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- single crystal
- diameter
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- aperture
- crystal
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- 239000013078 crystal Substances 0.000 title claims description 160
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 claims description 57
- 239000002994 raw material Substances 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 33
- 230000007246 mechanism Effects 0.000 claims description 28
- 230000006698 induction Effects 0.000 claims description 27
- 238000002844 melting Methods 0.000 claims description 23
- 230000008018 melting Effects 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 11
- 230000010355 oscillation Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000004857 zone melting Methods 0.000 claims description 4
- 238000004033 diameter control Methods 0.000 claims description 3
- 238000007499 fusion processing Methods 0.000 claims description 2
- 238000012937 correction Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 241000209149 Zea Species 0.000 description 2
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 235000005822 corn Nutrition 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014147114A JP6318938B2 (ja) | 2014-07-17 | 2014-07-17 | 単結晶の製造方法及び製造装置 |
| CN201510421141.5A CN105297131B (zh) | 2014-07-17 | 2015-07-17 | 单晶的制造方法及制造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014147114A JP6318938B2 (ja) | 2014-07-17 | 2014-07-17 | 単結晶の製造方法及び製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016023099A JP2016023099A (ja) | 2016-02-08 |
| JP6318938B2 true JP6318938B2 (ja) | 2018-05-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014147114A Active JP6318938B2 (ja) | 2014-07-17 | 2014-07-17 | 単結晶の製造方法及び製造装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6318938B2 (zh) |
| CN (1) | CN105297131B (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6540583B2 (ja) * | 2016-04-14 | 2019-07-10 | 株式会社Sumco | 単結晶の製造方法および装置 |
| DE102016214581A1 (de) * | 2016-08-05 | 2018-02-08 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls durch Zonenschmelzen |
| DE102017202311A1 (de) * | 2017-02-14 | 2018-08-16 | Siltronic Ag | Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren |
| DE102017202420A1 (de) | 2017-02-15 | 2018-08-16 | Siltronic Ag | Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren |
| DE102017202413A1 (de) | 2017-02-15 | 2018-08-16 | Siltronic Ag | Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren |
| JP6988461B2 (ja) * | 2017-12-26 | 2022-01-05 | 株式会社Sumco | 単結晶の製造方法及び製造装置 |
| DE102018210317A1 (de) * | 2018-06-25 | 2020-01-02 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium |
| JP6996477B2 (ja) * | 2018-11-13 | 2022-01-17 | 信越半導体株式会社 | 単結晶の製造方法 |
| JP7272239B2 (ja) * | 2019-11-08 | 2023-05-12 | 株式会社Sumco | 単結晶の製造方法 |
| JP2022149310A (ja) * | 2021-03-25 | 2022-10-06 | Tdk株式会社 | 結晶製造方法、結晶製造装置、及び単結晶 |
| CN114540942A (zh) * | 2022-03-07 | 2022-05-27 | 陕西有色天宏瑞科硅材料有限责任公司 | 一种区熔单晶硅的制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866230A (en) * | 1987-04-27 | 1989-09-12 | Shin-Etu Handotai Company, Limited | Method of and apparatus for controlling floating zone of semiconductor rod |
| JPH0977588A (ja) * | 1995-09-13 | 1997-03-25 | Komatsu Electron Metals Co Ltd | 浮遊帯域溶融法における晶出結晶径の自動制御方法およびその装置 |
| JP3601280B2 (ja) * | 1997-12-25 | 2004-12-15 | 信越半導体株式会社 | Ｆｚ法による半導体単結晶の製造方法 |
| JP4016363B2 (ja) * | 1998-07-28 | 2007-12-05 | 信越半導体株式会社 | 浮遊溶融帯域制御装置及び制御方法 |
| US6241818B1 (en) * | 1999-04-07 | 2001-06-05 | Memc Electronic Materials, Inc. | Method and system of controlling taper growth in a semiconductor crystal growth process |
| JP4694996B2 (ja) * | 2006-03-20 | 2011-06-08 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 単結晶育成方法、単結晶育成装置 |
| JP2010076979A (ja) * | 2008-09-26 | 2010-04-08 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Ｆｚ法半導体単結晶製造時の測量方法、測量システム、ｆｚ法半導体単結晶製造時の制御方法、制御システム |
| CN101974779B (zh) * | 2010-11-03 | 2011-07-13 | 天津市环欧半导体材料技术有限公司 | 一种制备<110>区熔硅单晶的方法 |
| JP2012162419A (ja) * | 2011-02-07 | 2012-08-30 | Toyota Motor Corp | 単結晶製造装置及び単結晶製造方法 |
| CN102220629B (zh) * | 2011-07-25 | 2013-02-13 | 天津市环欧半导体材料技术有限公司 | 一种采用直径法控制区熔晶体自动生长方法及系统 |
| CN103614765A (zh) * | 2013-10-31 | 2014-03-05 | 中国科学院上海光学精密机械研究所 | 石墨加热生长蓝宝石晶体的方法 |
-
2014
- 2014-07-17 JP JP2014147114A patent/JP6318938B2/ja active Active
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2015
- 2015-07-17 CN CN201510421141.5A patent/CN105297131B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016023099A (ja) | 2016-02-08 |
| CN105297131A (zh) | 2016-02-03 |
| CN105297131B (zh) | 2018-01-30 |
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