JP6316578B2 - 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 - Google Patents

走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 Download PDF

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JP6316578B2
JP6316578B2 JP2013249249A JP2013249249A JP6316578B2 JP 6316578 B2 JP6316578 B2 JP 6316578B2 JP 2013249249 A JP2013249249 A JP 2013249249A JP 2013249249 A JP2013249249 A JP 2013249249A JP 6316578 B2 JP6316578 B2 JP 6316578B2
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pattern
electron beam
hole
backscattered
electron microscope
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JP2015106530A5 (enExample
JP2015106530A (ja
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宍戸　千絵
千絵 宍戸
山本　琢磨
琢磨 山本
慎也 山田
慎也 山田
田中　麻紀
麻紀 田中
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2013249249A priority Critical patent/JP6316578B2/ja
Priority to TW103138407A priority patent/TWI564926B/zh
Priority to US15/039,527 priority patent/US9852881B2/en
Priority to PCT/JP2014/080661 priority patent/WO2015083548A1/ja
Priority to KR1020167006631A priority patent/KR101762219B1/ko
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Publication of JP2015106530A5 publication Critical patent/JP2015106530A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29—Reflection microscopes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2815—Depth profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2013249249A 2013-12-02 2013-12-02 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 Active JP6316578B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013249249A JP6316578B2 (ja) 2013-12-02 2013-12-02 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡
TW103138407A TWI564926B (zh) 2013-12-02 2014-11-05 Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy
US15/039,527 US9852881B2 (en) 2013-12-02 2014-11-19 Scanning electron microscope system, pattern measurement method using same, and scanning electron microscope
PCT/JP2014/080661 WO2015083548A1 (ja) 2013-12-02 2014-11-19 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡
KR1020167006631A KR101762219B1 (ko) 2013-12-02 2014-11-19 주사 전자 현미경 시스템 및 그것을 이용한 패턴 계측 방법 및 주사 전자 현미경

Applications Claiming Priority (1)

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JP2013249249A JP6316578B2 (ja) 2013-12-02 2013-12-02 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡

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JP2015106530A JP2015106530A (ja) 2015-06-08
JP2015106530A5 JP2015106530A5 (enExample) 2016-11-10
JP6316578B2 true JP6316578B2 (ja) 2018-04-25

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US (1) US9852881B2 (enExample)
JP (1) JP6316578B2 (enExample)
KR (1) KR101762219B1 (enExample)
TW (1) TWI564926B (enExample)
WO (1) WO2015083548A1 (enExample)

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KR20210018017A (ko) * 2019-08-07 2021-02-17 주식회사 히타치하이테크 주사 전자 현미경 및 패턴 계측 방법
TWI739196B (zh) * 2018-11-05 2021-09-11 日商日立全球先端科技股份有限公司 圖案量測方法，量測系統，及電腦可讀媒體

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US9653257B2 (en) * 2015-03-03 2017-05-16 Kla-Tencor Corporation Method and system for reducing charging artifacts in scanning electron microscopy images
JP6527799B2 (ja) 2015-09-25 2019-06-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置及びパターン測定装置
JP6820660B2 (ja) * 2016-01-29 2021-01-27 株式会社日立ハイテク 荷電粒子線装置
US10460903B2 (en) * 2016-04-04 2019-10-29 Kla-Tencor Corporation Method and system for charge control for imaging floating metal structures on non-conducting substrates
JP6511193B2 (ja) 2016-04-13 2019-05-15 株式会社日立ハイテクノロジーズ パターン計測装置およびパターン計測方法
WO2018020626A1 (ja) * 2016-07-28 2018-02-01 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
JP6640057B2 (ja) 2016-09-14 2020-02-05 株式会社日立ハイテクノロジーズ 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法
JP2018113322A (ja) 2017-01-11 2018-07-19 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
US11295930B2 (en) * 2017-02-07 2022-04-05 Asml Netherlands B.V. Method and apparatus for charged particle detection
US11443915B2 (en) 2017-09-26 2022-09-13 Asml Netherlands B.V. Detection of buried features by backscattered particles
CN115507782A (zh) * 2017-10-13 2022-12-23 株式会社日立高新技术 图案测量装置及图案测量方法
JP6865465B2 (ja) * 2017-11-10 2021-04-28 株式会社日立ハイテク パターン計測装置および計測方法
JP6541161B2 (ja) * 2017-11-17 2019-07-10 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP7137943B2 (ja) * 2018-03-20 2022-09-15 株式会社日立ハイテク 探索装置、探索方法及びプラズマ処理装置
JP2019185972A (ja) * 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 走査電子顕微鏡システム及びパターンの深さ計測方法
JP2019184354A (ja) * 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 電子顕微鏡装置、電子顕微鏡装置を用いた検査システム及び電子顕微鏡装置を用いた検査方法
JP2019211356A (ja) * 2018-06-06 2019-12-12 株式会社日立ハイテクノロジーズ パターン測定方法、パターン測定ツール、及びコンピュータ可読媒体
US10714306B2 (en) * 2018-06-11 2020-07-14 Applied Materials Israel Ltd. Measuring a height profile of a hole formed in non-conductive region
US10340116B1 (en) * 2018-06-13 2019-07-02 Applied Materials Israel Ltd. Imaging an area that includes an upper surface and a hole
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JP7120873B2 (ja) * 2018-10-09 2022-08-17 株式会社日立製作所 計測装置及び試料の表面の計測方法
JP7091263B2 (ja) 2019-01-22 2022-06-27 株式会社日立ハイテク 電子顕微鏡及び３次元構造の深さ算出方法
JP7199290B2 (ja) 2019-04-08 2023-01-05 株式会社日立ハイテク パターン断面形状推定システム、およびプログラム
JP7167323B2 (ja) * 2019-05-08 2022-11-08 株式会社日立ハイテク パターン計測装置および計測方法
US11139142B2 (en) * 2019-05-23 2021-10-05 Applied Materials, Inc. High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy
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US10943763B1 (en) * 2019-09-24 2021-03-09 Applied Materials, Inc. Use of electron beam scanning electron microscopy for characterization of a sidewall occluded from line-of-sight of the electron beam
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TWI739196B (zh) * 2018-11-05 2021-09-11 日商日立全球先端科技股份有限公司 圖案量測方法，量測系統，及電腦可讀媒體
JPWO2020095346A1 (ja) * 2018-11-05 2021-10-07 株式会社日立ハイテク パターン計測方法、計測システム、及びコンピュータ可読媒体
JP7150049B2 (ja) 2018-11-05 2022-10-07 株式会社日立ハイテク パターン計測方法、計測システム、及びコンピュータ可読媒体
JP2022179549A (ja) * 2018-11-05 2022-12-02 株式会社日立ハイテク パターン計測方法、計測システム、及びコンピュータ可読媒体
JP7411042B2 (ja) 2018-11-05 2024-01-10 株式会社日立ハイテク パターン計測方法、計測システム、及びコンピュータ可読媒体
KR20210018017A (ko) * 2019-08-07 2021-02-17 주식회사 히타치하이테크 주사 전자 현미경 및 패턴 계측 방법
KR102410882B1 (ko) 2019-08-07 2022-06-21 주식회사 히타치하이테크 주사 전자 현미경 및 패턴 계측 방법

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TW201532101A (zh) 2015-08-16
WO2015083548A1 (ja) 2015-06-11
KR20160046837A (ko) 2016-04-29
KR101762219B1 (ko) 2017-07-27
JP2015106530A (ja) 2015-06-08
TWI564926B (zh) 2017-01-01
US20160379798A1 (en) 2016-12-29
US9852881B2 (en) 2017-12-26

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