KR101762219B1 - 주사 전자 현미경 시스템 및 그것을 이용한 패턴 계측 방법 및 주사 전자 현미경 - Google Patents

주사 전자 현미경 시스템 및 그것을 이용한 패턴 계측 방법 및 주사 전자 현미경 Download PDF

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KR101762219B1
KR101762219B1 KR1020167006631A KR20167006631A KR101762219B1 KR 101762219 B1 KR101762219 B1 KR 101762219B1 KR 1020167006631 A KR1020167006631 A KR 1020167006631A KR 20167006631 A KR20167006631 A KR 20167006631A KR 101762219 B1 KR101762219 B1 KR 101762219B1
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electron beam
electron
hole
backscattering
detecting
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KR20160046837A (ko
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치에 시시도
다쿠마 야마모토
신야 야마다
마키 다나카
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29—Reflection microscopes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2815—Depth profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020167006631A 2013-12-02 2014-11-19 주사 전자 현미경 시스템 및 그것을 이용한 패턴 계측 방법 및 주사 전자 현미경 Active KR101762219B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013249249A JP6316578B2 (ja) 2013-12-02 2013-12-02 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡
JPJP-P-2013-249249 2013-12-02
PCT/JP2014/080661 WO2015083548A1 (ja) 2013-12-02 2014-11-19 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡

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KR101762219B1 true KR101762219B1 (ko) 2017-07-27

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US (1) US9852881B2 (enExample)
JP (1) JP6316578B2 (enExample)
KR (1) KR101762219B1 (enExample)
TW (1) TWI564926B (enExample)
WO (1) WO2015083548A1 (enExample)

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JP6820660B2 (ja) * 2016-01-29 2021-01-27 株式会社日立ハイテク 荷電粒子線装置
US10460903B2 (en) * 2016-04-04 2019-10-29 Kla-Tencor Corporation Method and system for charge control for imaging floating metal structures on non-conducting substrates
US10816332B2 (en) 2016-04-13 2020-10-27 Hitachi High-Tech Corporation Pattern measurement device and pattern measurement method
WO2018020626A1 (ja) * 2016-07-28 2018-02-01 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
JP6640057B2 (ja) * 2016-09-14 2020-02-05 株式会社日立ハイテクノロジーズ 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法
JP2018113322A (ja) 2017-01-11 2018-07-19 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
EP4163950A1 (en) * 2017-02-07 2023-04-12 ASML Netherlands B.V. Method and apparatus for charged particle detection
US11353798B2 (en) 2017-10-13 2022-06-07 Hitachi High-Technologies Corporation Pattern measurement device and pattern measurement method
JP6865465B2 (ja) * 2017-11-10 2021-04-28 株式会社日立ハイテク パターン計測装置および計測方法
JP6541161B2 (ja) * 2017-11-17 2019-07-10 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP7137943B2 (ja) * 2018-03-20 2022-09-15 株式会社日立ハイテク 探索装置、探索方法及びプラズマ処理装置
JP2019184354A (ja) 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 電子顕微鏡装置、電子顕微鏡装置を用いた検査システム及び電子顕微鏡装置を用いた検査方法
JP2019185972A (ja) * 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 走査電子顕微鏡システム及びパターンの深さ計測方法
JP2019211356A (ja) * 2018-06-06 2019-12-12 株式会社日立ハイテクノロジーズ パターン測定方法、パターン測定ツール、及びコンピュータ可読媒体
US10714306B2 (en) * 2018-06-11 2020-07-14 Applied Materials Israel Ltd. Measuring a height profile of a hole formed in non-conductive region
US10340116B1 (en) * 2018-06-13 2019-07-02 Applied Materials Israel Ltd. Imaging an area that includes an upper surface and a hole
DE112018007843B4 (de) 2018-09-21 2024-05-29 Hitachi High-Tech Corporation Mit einem strahl geladener teilchen arbeitende vorrichtung
JP7120873B2 (ja) * 2018-10-09 2022-08-17 株式会社日立製作所 計測装置及び試料の表面の計測方法
WO2020095346A1 (ja) * 2018-11-05 2020-05-14 株式会社 日立ハイテクノロジーズ パターン計測方法、計測システム、及びコンピュータ可読媒体
JP7091263B2 (ja) * 2019-01-22 2022-06-27 株式会社日立ハイテク 電子顕微鏡及び３次元構造の深さ算出方法
JP7199290B2 (ja) 2019-04-08 2023-01-05 株式会社日立ハイテク パターン断面形状推定システム、およびプログラム
WO2020225876A1 (ja) * 2019-05-08 2020-11-12 株式会社日立ハイテク パターン計測装置および計測方法
US11139142B2 (en) * 2019-05-23 2021-10-05 Applied Materials, Inc. High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy
JP7149906B2 (ja) 2019-08-07 2022-10-07 株式会社日立ハイテク 走査電子顕微鏡及びパタン計測方法
KR102771899B1 (ko) * 2019-09-03 2025-02-25 삼성전자주식회사 주사 전자 현미경 장치 및 그의 동작 방법
CN110751622B (zh) * 2019-09-05 2022-07-15 长江存储科技有限责任公司 半导体结构的检测方法及其检测装置
US10943763B1 (en) * 2019-09-24 2021-03-09 Applied Materials, Inc. Use of electron beam scanning electron microscopy for characterization of a sidewall occluded from line-of-sight of the electron beam
CN112967941B (zh) * 2019-12-12 2022-04-26 长鑫存储技术有限公司 电容孔倾斜检测与反馈的方法、系统及存储介质
US11056404B1 (en) * 2019-12-18 2021-07-06 Applied Materials Israel Ltd. Evaluating a hole formed in an intermediate product
US11335608B2 (en) 2020-04-15 2022-05-17 Kla Corporation Electron beam system for inspection and review of 3D devices
JP2022015476A (ja) 2020-07-09 2022-01-21 キオクシア株式会社 位置ずれ計測装置、位置ずれ計測方法、及び位置ずれ計測プログラム
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JP2022112137A (ja) * 2021-01-21 2022-08-02 株式会社日立ハイテク 荷電粒子ビーム装置
JP2022170466A (ja) * 2021-04-28 2022-11-10 株式会社日立ハイテク 荷電粒子ビームシステム
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KR20160046837A (ko) 2016-04-29
US9852881B2 (en) 2017-12-26
TWI564926B (zh) 2017-01-01
TW201532101A (zh) 2015-08-16
JP6316578B2 (ja) 2018-04-25
US20160379798A1 (en) 2016-12-29
WO2015083548A1 (ja) 2015-06-11
JP2015106530A (ja) 2015-06-08

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