TWI564926B - Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy - Google Patents
Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy Download PDFInfo
- Publication number
- TWI564926B TWI564926B TW103138407A TW103138407A TWI564926B TW I564926 B TWI564926 B TW I564926B TW 103138407 A TW103138407 A TW 103138407A TW 103138407 A TW103138407 A TW 103138407A TW I564926 B TWI564926 B TW I564926B
- Authority
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- Taiwan
- Prior art keywords
- electron beam
- backscattered
- electron
- hole
- pattern
- Prior art date
Links
- 238000004626 scanning electron microscopy Methods 0.000 title 2
- 238000000691 measurement method Methods 0.000 title 1
- 238000010894 electron beam technology Methods 0.000 claims description 122
- 230000007246 mechanism Effects 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 29
- 238000001514 detection method Methods 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 238000011088 calibration curve Methods 0.000 claims description 12
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000000523 sample Substances 0.000 description 71
- 238000003384 imaging method Methods 0.000 description 23
- 238000005259 measurement Methods 0.000 description 23
- 230000001133 acceleration Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 16
- 238000004088 simulation Methods 0.000 description 9
- 230000035515 penetration Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000284 extract Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/29—Reflection microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24495—Signal processing, e.g. mixing of two or more signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2806—Secondary charged particle
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
- H01J2237/281—Bottom of trenches or holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2814—Measurement of surface topography
- H01J2237/2815—Depth profile
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013249249A JP6316578B2 (ja) | 2013-12-02 | 2013-12-02 | 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201532101A TW201532101A (zh) | 2015-08-16 |
| TWI564926B true TWI564926B (zh) | 2017-01-01 |
Family
ID=53273315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103138407A TWI564926B (zh) | 2013-12-02 | 2014-11-05 | Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9852881B2 (enExample) |
| JP (1) | JP6316578B2 (enExample) |
| KR (1) | KR101762219B1 (enExample) |
| TW (1) | TWI564926B (enExample) |
| WO (1) | WO2015083548A1 (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9653257B2 (en) * | 2015-03-03 | 2017-05-16 | Kla-Tencor Corporation | Method and system for reducing charging artifacts in scanning electron microscopy images |
| JP6527799B2 (ja) | 2015-09-25 | 2019-06-05 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及びパターン測定装置 |
| JP6820660B2 (ja) * | 2016-01-29 | 2021-01-27 | 株式会社日立ハイテク | 荷電粒子線装置 |
| US10460903B2 (en) * | 2016-04-04 | 2019-10-29 | Kla-Tencor Corporation | Method and system for charge control for imaging floating metal structures on non-conducting substrates |
| US10816332B2 (en) | 2016-04-13 | 2020-10-27 | Hitachi High-Tech Corporation | Pattern measurement device and pattern measurement method |
| US11282671B2 (en) | 2016-07-28 | 2022-03-22 | Hitachi High-Tech Corporation | Charged-particle beam apparatus |
| JP6640057B2 (ja) | 2016-09-14 | 2020-02-05 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法 |
| JP2018113322A (ja) | 2017-01-11 | 2018-07-19 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
| EP4163950A1 (en) * | 2017-02-07 | 2023-04-12 | ASML Netherlands B.V. | Method and apparatus for charged particle detection |
| CN111247618B (zh) * | 2017-09-26 | 2023-02-17 | Asml荷兰有限公司 | 通过反向散射粒子对掩埋特征的检测 |
| KR102392338B1 (ko) | 2017-10-13 | 2022-05-02 | 주식회사 히타치하이테크 | 패턴 계측 장치 및 패턴 계측 방법 |
| JP6865465B2 (ja) | 2017-11-10 | 2021-04-28 | 株式会社日立ハイテク | パターン計測装置および計測方法 |
| JP6541161B2 (ja) * | 2017-11-17 | 2019-07-10 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
| JP7137943B2 (ja) * | 2018-03-20 | 2022-09-15 | 株式会社日立ハイテク | 探索装置、探索方法及びプラズマ処理装置 |
| JP2019185972A (ja) * | 2018-04-06 | 2019-10-24 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡システム及びパターンの深さ計測方法 |
| JP2019184354A (ja) | 2018-04-06 | 2019-10-24 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡装置、電子顕微鏡装置を用いた検査システム及び電子顕微鏡装置を用いた検査方法 |
| JP2019211356A (ja) * | 2018-06-06 | 2019-12-12 | 株式会社日立ハイテクノロジーズ | パターン測定方法、パターン測定ツール、及びコンピュータ可読媒体 |
| US10714306B2 (en) * | 2018-06-11 | 2020-07-14 | Applied Materials Israel Ltd. | Measuring a height profile of a hole formed in non-conductive region |
| US10340116B1 (en) * | 2018-06-13 | 2019-07-02 | Applied Materials Israel Ltd. | Imaging an area that includes an upper surface and a hole |
| US11515120B2 (en) | 2018-09-21 | 2022-11-29 | Hitachi High-Tech Corporation | Charged particle beam apparatus |
| JP7120873B2 (ja) * | 2018-10-09 | 2022-08-17 | 株式会社日立製作所 | 計測装置及び試料の表面の計測方法 |
| KR102710529B1 (ko) * | 2018-11-05 | 2024-09-27 | 주식회사 히타치하이테크 | 패턴 계측 방법, 계측 시스템 및 컴퓨터 가독 매체 |
| JP7091263B2 (ja) * | 2019-01-22 | 2022-06-27 | 株式会社日立ハイテク | 電子顕微鏡及び３次元構造の深さ算出方法 |
| JP7199290B2 (ja) | 2019-04-08 | 2023-01-05 | 株式会社日立ハイテク | パターン断面形状推定システム、およびプログラム |
| US20220230842A1 (en) | 2019-05-08 | 2022-07-21 | Hitachi High-Tech Corporation | Pattern measurement system and pattern measurement method |
| US11139142B2 (en) * | 2019-05-23 | 2021-10-05 | Applied Materials, Inc. | High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy |
| JP7149906B2 (ja) | 2019-08-07 | 2022-10-07 | 株式会社日立ハイテク | 走査電子顕微鏡及びパタン計測方法 |
| KR102771899B1 (ko) * | 2019-09-03 | 2025-02-25 | 삼성전자주식회사 | 주사 전자 현미경 장치 및 그의 동작 방법 |
| CN110751622B (zh) * | 2019-09-05 | 2022-07-15 | 长江存储科技有限责任公司 | 半导体结构的检测方法及其检测装置 |
| US10943763B1 (en) * | 2019-09-24 | 2021-03-09 | Applied Materials, Inc. | Use of electron beam scanning electron microscopy for characterization of a sidewall occluded from line-of-sight of the electron beam |
| CN112967941B (zh) * | 2019-12-12 | 2022-04-26 | 长鑫存储技术有限公司 | 电容孔倾斜检测与反馈的方法、系统及存储介质 |
| US11056404B1 (en) * | 2019-12-18 | 2021-07-06 | Applied Materials Israel Ltd. | Evaluating a hole formed in an intermediate product |
| US11335608B2 (en) | 2020-04-15 | 2022-05-17 | Kla Corporation | Electron beam system for inspection and review of 3D devices |
| JP2022015476A (ja) | 2020-07-09 | 2022-01-21 | キオクシア株式会社 | 位置ずれ計測装置、位置ずれ計測方法、及び位置ずれ計測プログラム |
| US12176252B2 (en) | 2021-01-14 | 2024-12-24 | Changxin Memory Technologies, Inc. | Method and device for predicting inclination angle, and method and device for monitoring etching device |
| CN112713113B (zh) * | 2021-01-14 | 2022-05-24 | 长鑫存储技术有限公司 | 倾斜角度预测方法及装置、设备监控方法、介质及设备 |
| JP2022112137A (ja) * | 2021-01-21 | 2022-08-02 | 株式会社日立ハイテク | 荷電粒子ビーム装置 |
| JP2022170466A (ja) * | 2021-04-28 | 2022-11-10 | 株式会社日立ハイテク | 荷電粒子ビームシステム |
| JP7719865B2 (ja) * | 2021-05-28 | 2025-08-06 | 株式会社日立ハイテク | 深さ計測装置、深さ計測システム及び深さ指標値算出方法 |
| CN113466277B (zh) * | 2021-06-25 | 2022-05-10 | 长江存储科技有限责任公司 | 测试样品的制备方法及测试样品 |
| US11921063B2 (en) * | 2021-07-21 | 2024-03-05 | Applied Materials Israel Ltd. | Lateral recess measurement in a semiconductor specimen |
| CN113725113B (zh) * | 2021-08-30 | 2023-11-10 | 长江存储科技有限责任公司 | 半导体器件测量方法及装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04149944A (ja) * | 1990-10-12 | 1992-05-22 | Hitachi Ltd | 走査形電子顕微鏡、及び走査形電子顕微鏡による試料像形成方法 |
| TW473892B (en) * | 1999-11-05 | 2002-01-21 | Nippon Electric Co | Semiconductor device tester |
| TW200735163A (en) * | 2005-12-02 | 2007-09-16 | Alis Corp | Ion sources, systems and methods |
| JP2013045500A (ja) * | 2011-08-22 | 2013-03-04 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| JP2013089514A (ja) * | 2011-10-20 | 2013-05-13 | Hitachi High-Technologies Corp | 走査電子顕微鏡 |
| US20130245989A1 (en) * | 2011-12-26 | 2013-09-19 | Kabushiki Kaisha Toshiba | Signal processing method and signal processing apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5412210A (en) * | 1990-10-12 | 1995-05-02 | Hitachi, Ltd. | Scanning electron microscope and method for production of semiconductor device by using the same |
| JPH06310075A (ja) * | 1993-04-27 | 1994-11-04 | Hitachi Ltd | 走査型電子顕微鏡 |
| JP2002110079A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 電子線装置 |
| JP2003157790A (ja) * | 2001-11-20 | 2003-05-30 | Advantest Corp | 微細凹凸量測定装置及び走査型電子顕微鏡 |
| JP2010175249A (ja) * | 2009-01-27 | 2010-08-12 | Hitachi High-Technologies Corp | 試料高さ測定方法及び試料高さ測定装置 |
| KR101411119B1 (ko) * | 2010-09-25 | 2014-06-25 | 가부시키가이샤 히다치 하이테크놀로지즈 | 하전 입자 빔 현미경 |
-
2013
- 2013-12-02 JP JP2013249249A patent/JP6316578B2/ja active Active
-
2014
- 2014-11-05 TW TW103138407A patent/TWI564926B/zh active
- 2014-11-19 US US15/039,527 patent/US9852881B2/en active Active
- 2014-11-19 KR KR1020167006631A patent/KR101762219B1/ko active Active
- 2014-11-19 WO PCT/JP2014/080661 patent/WO2015083548A1/ja not_active Ceased
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04149944A (ja) * | 1990-10-12 | 1992-05-22 | Hitachi Ltd | 走査形電子顕微鏡、及び走査形電子顕微鏡による試料像形成方法 |
| TW473892B (en) * | 1999-11-05 | 2002-01-21 | Nippon Electric Co | Semiconductor device tester |
| TW200735163A (en) * | 2005-12-02 | 2007-09-16 | Alis Corp | Ion sources, systems and methods |
| JP2013045500A (ja) * | 2011-08-22 | 2013-03-04 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| JP2013089514A (ja) * | 2011-10-20 | 2013-05-13 | Hitachi High-Technologies Corp | 走査電子顕微鏡 |
| US20130245989A1 (en) * | 2011-12-26 | 2013-09-19 | Kabushiki Kaisha Toshiba | Signal processing method and signal processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160379798A1 (en) | 2016-12-29 |
| US9852881B2 (en) | 2017-12-26 |
| KR101762219B1 (ko) | 2017-07-27 |
| TW201532101A (zh) | 2015-08-16 |
| WO2015083548A1 (ja) | 2015-06-11 |
| KR20160046837A (ko) | 2016-04-29 |
| JP6316578B2 (ja) | 2018-04-25 |
| JP2015106530A (ja) | 2015-06-08 |
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