TWI564926B - Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy - Google Patents

Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy Download PDF

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Publication number
TWI564926B
TWI564926B TW103138407A TW103138407A TWI564926B TW I564926 B TWI564926 B TW I564926B TW 103138407 A TW103138407 A TW 103138407A TW 103138407 A TW103138407 A TW 103138407A TW I564926 B TWI564926 B TW I564926B
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TW
Taiwan
Prior art keywords
electron beam
backscattered
electron
hole
pattern
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TW103138407A
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English (en)
Chinese (zh)
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TW201532101A (zh
Inventor
宍戸千繪
山本琢磨
山田慎也
田中麻紀
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日立全球先端科技股份有限公司
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Publication of TW201532101A publication Critical patent/TW201532101A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29—Reflection microscopes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2815—Depth profile
    • H10P74/203—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW103138407A 2013-12-02 2014-11-05 Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy TWI564926B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013249249A JP6316578B2 (ja) 2013-12-02 2013-12-02 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡

Publications (2)

Publication Number Publication Date
TW201532101A TW201532101A (zh) 2015-08-16
TWI564926B true TWI564926B (zh) 2017-01-01

Family

ID=53273315

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103138407A TWI564926B (zh) 2013-12-02 2014-11-05 Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy

Country Status (5)

Country Link
US (1) US9852881B2 (enExample)
JP (1) JP6316578B2 (enExample)
KR (1) KR101762219B1 (enExample)
TW (1) TWI564926B (enExample)
WO (1) WO2015083548A1 (enExample)

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JP6527799B2 (ja) 2015-09-25 2019-06-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置及びパターン測定装置
JP6820660B2 (ja) * 2016-01-29 2021-01-27 株式会社日立ハイテク 荷電粒子線装置
US10460903B2 (en) * 2016-04-04 2019-10-29 Kla-Tencor Corporation Method and system for charge control for imaging floating metal structures on non-conducting substrates
JP6511193B2 (ja) 2016-04-13 2019-05-15 株式会社日立ハイテクノロジーズ パターン計測装置およびパターン計測方法
US11282671B2 (en) 2016-07-28 2022-03-22 Hitachi High-Tech Corporation Charged-particle beam apparatus
JP6640057B2 (ja) * 2016-09-14 2020-02-05 株式会社日立ハイテクノロジーズ 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法
JP2018113322A (ja) 2017-01-11 2018-07-19 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
KR102468155B1 (ko) * 2017-02-07 2022-11-17 에이에스엠엘 네델란즈 비.브이. 하전 입자 검출 방법 및 장치
CN111247618B (zh) * 2017-09-26 2023-02-17 Asml荷兰有限公司 通过反向散射粒子对掩埋特征的检测
CN115507782A (zh) * 2017-10-13 2022-12-23 株式会社日立高新技术 图案测量装置及图案测量方法
JP6865465B2 (ja) * 2017-11-10 2021-04-28 株式会社日立ハイテク パターン計測装置および計測方法
JP6541161B2 (ja) * 2017-11-17 2019-07-10 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
JP7137943B2 (ja) * 2018-03-20 2022-09-15 株式会社日立ハイテク 探索装置、探索方法及びプラズマ処理装置
JP2019185972A (ja) * 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 走査電子顕微鏡システム及びパターンの深さ計測方法
JP2019184354A (ja) 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 電子顕微鏡装置、電子顕微鏡装置を用いた検査システム及び電子顕微鏡装置を用いた検査方法
JP2019211356A (ja) * 2018-06-06 2019-12-12 株式会社日立ハイテクノロジーズ パターン測定方法、パターン測定ツール、及びコンピュータ可読媒体
US10714306B2 (en) * 2018-06-11 2020-07-14 Applied Materials Israel Ltd. Measuring a height profile of a hole formed in non-conductive region
US10340116B1 (en) * 2018-06-13 2019-07-02 Applied Materials Israel Ltd. Imaging an area that includes an upper surface and a hole
US11515120B2 (en) 2018-09-21 2022-11-29 Hitachi High-Tech Corporation Charged particle beam apparatus
JP7120873B2 (ja) * 2018-10-09 2022-08-17 株式会社日立製作所 計測装置及び試料の表面の計測方法
JP7150049B2 (ja) * 2018-11-05 2022-10-07 株式会社日立ハイテク パターン計測方法、計測システム、及びコンピュータ可読媒体
JP7091263B2 (ja) * 2019-01-22 2022-06-27 株式会社日立ハイテク 電子顕微鏡及び３次元構造の深さ算出方法
JP7199290B2 (ja) * 2019-04-08 2023-01-05 株式会社日立ハイテク パターン断面形状推定システム、およびプログラム
CN113785170B (zh) * 2019-05-08 2023-07-14 株式会社日立高新技术 图案测量装置以及测量方法
US11139142B2 (en) * 2019-05-23 2021-10-05 Applied Materials, Inc. High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy
JP7149906B2 (ja) * 2019-08-07 2022-10-07 株式会社日立ハイテク 走査電子顕微鏡及びパタン計測方法
KR102771899B1 (ko) * 2019-09-03 2025-02-25 삼성전자주식회사 주사 전자 현미경 장치 및 그의 동작 방법
CN110751622B (zh) * 2019-09-05 2022-07-15 长江存储科技有限责任公司 半导体结构的检测方法及其检测装置
US10943763B1 (en) * 2019-09-24 2021-03-09 Applied Materials, Inc. Use of electron beam scanning electron microscopy for characterization of a sidewall occluded from line-of-sight of the electron beam
CN112967941B (zh) * 2019-12-12 2022-04-26 长鑫存储技术有限公司 电容孔倾斜检测与反馈的方法、系统及存储介质
US11056404B1 (en) * 2019-12-18 2021-07-06 Applied Materials Israel Ltd. Evaluating a hole formed in an intermediate product
US11335608B2 (en) 2020-04-15 2022-05-17 Kla Corporation Electron beam system for inspection and review of 3D devices
JP2022015476A (ja) 2020-07-09 2022-01-21 キオクシア株式会社 位置ずれ計測装置、位置ずれ計測方法、及び位置ずれ計測プログラム
US12176252B2 (en) 2021-01-14 2024-12-24 Changxin Memory Technologies, Inc. Method and device for predicting inclination angle, and method and device for monitoring etching device
CN112713113B (zh) * 2021-01-14 2022-05-24 长鑫存储技术有限公司 倾斜角度预测方法及装置、设备监控方法、介质及设备
JP2022112137A (ja) * 2021-01-21 2022-08-02 株式会社日立ハイテク 荷電粒子ビーム装置
JP2022170466A (ja) * 2021-04-28 2022-11-10 株式会社日立ハイテク 荷電粒子ビームシステム
KR20230167095A (ko) * 2021-05-28 2023-12-07 주식회사 히타치하이테크 깊이 계측 장치, 깊이 계측 시스템 및 깊이 지표값 산출 방법
CN113466277B (zh) * 2021-06-25 2022-05-10 长江存储科技有限责任公司 测试样品的制备方法及测试样品
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JPH04149944A (ja) * 1990-10-12 1992-05-22 Hitachi Ltd 走査形電子顕微鏡、及び走査形電子顕微鏡による試料像形成方法
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Publication number Priority date Publication date Assignee Title
JPH04149944A (ja) * 1990-10-12 1992-05-22 Hitachi Ltd 走査形電子顕微鏡、及び走査形電子顕微鏡による試料像形成方法
TW473892B (en) * 1999-11-05 2002-01-21 Nippon Electric Co Semiconductor device tester
TW200735163A (en) * 2005-12-02 2007-09-16 Alis Corp Ion sources, systems and methods
JP2013045500A (ja) * 2011-08-22 2013-03-04 Hitachi High-Technologies Corp 荷電粒子線装置
JP2013089514A (ja) * 2011-10-20 2013-05-13 Hitachi High-Technologies Corp 走査電子顕微鏡
US20130245989A1 (en) * 2011-12-26 2013-09-19 Kabushiki Kaisha Toshiba Signal processing method and signal processing apparatus

Also Published As

Publication number Publication date
WO2015083548A1 (ja) 2015-06-11
JP6316578B2 (ja) 2018-04-25
JP2015106530A (ja) 2015-06-08
US9852881B2 (en) 2017-12-26
US20160379798A1 (en) 2016-12-29
TW201532101A (zh) 2015-08-16
KR101762219B1 (ko) 2017-07-27
KR20160046837A (ko) 2016-04-29

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