JP2015106530A5 - - Google Patents
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- JP2015106530A5 JP2015106530A5 JP2013249249A JP2013249249A JP2015106530A5 JP 2015106530 A5 JP2015106530 A5 JP 2015106530A5 JP 2013249249 A JP2013249249 A JP 2013249249A JP 2013249249 A JP2013249249 A JP 2013249249A JP 2015106530 A5 JP2015106530 A5 JP 2015106530A5
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- backscattered
- electron
- pattern
- beam image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 claims 54
- 239000000758 substrate Substances 0.000 claims 23
- 238000001514 detection method Methods 0.000 claims 21
- 230000001678 irradiating effect Effects 0.000 claims 6
- 230000000149 penetrating effect Effects 0.000 claims 6
- 239000000463 material Substances 0.000 claims 2
- 238000000691 measurement method Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 238000011088 calibration curve Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013249249A JP6316578B2 (ja) | 2013-12-02 | 2013-12-02 | 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 |
| TW103138407A TWI564926B (zh) | 2013-12-02 | 2014-11-05 | Scanning electron microscopy system and the use of its pattern measurement method and scanning electron microscopy |
| PCT/JP2014/080661 WO2015083548A1 (ja) | 2013-12-02 | 2014-11-19 | 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 |
| KR1020167006631A KR101762219B1 (ko) | 2013-12-02 | 2014-11-19 | 주사 전자 현미경 시스템 및 그것을 이용한 패턴 계측 방법 및 주사 전자 현미경 |
| US15/039,527 US9852881B2 (en) | 2013-12-02 | 2014-11-19 | Scanning electron microscope system, pattern measurement method using same, and scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013249249A JP6316578B2 (ja) | 2013-12-02 | 2013-12-02 | 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015106530A JP2015106530A (ja) | 2015-06-08 |
| JP2015106530A5 true JP2015106530A5 (enExample) | 2016-11-10 |
| JP6316578B2 JP6316578B2 (ja) | 2018-04-25 |
Family
ID=53273315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013249249A Active JP6316578B2 (ja) | 2013-12-02 | 2013-12-02 | 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9852881B2 (enExample) |
| JP (1) | JP6316578B2 (enExample) |
| KR (1) | KR101762219B1 (enExample) |
| TW (1) | TWI564926B (enExample) |
| WO (1) | WO2015083548A1 (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9653257B2 (en) * | 2015-03-03 | 2017-05-16 | Kla-Tencor Corporation | Method and system for reducing charging artifacts in scanning electron microscopy images |
| JP6527799B2 (ja) | 2015-09-25 | 2019-06-05 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及びパターン測定装置 |
| JP6820660B2 (ja) * | 2016-01-29 | 2021-01-27 | 株式会社日立ハイテク | 荷電粒子線装置 |
| US10460903B2 (en) * | 2016-04-04 | 2019-10-29 | Kla-Tencor Corporation | Method and system for charge control for imaging floating metal structures on non-conducting substrates |
| US10816332B2 (en) | 2016-04-13 | 2020-10-27 | Hitachi High-Tech Corporation | Pattern measurement device and pattern measurement method |
| US11282671B2 (en) | 2016-07-28 | 2022-03-22 | Hitachi High-Tech Corporation | Charged-particle beam apparatus |
| JP6640057B2 (ja) | 2016-09-14 | 2020-02-05 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法 |
| JP2018113322A (ja) | 2017-01-11 | 2018-07-19 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
| EP4163950A1 (en) * | 2017-02-07 | 2023-04-12 | ASML Netherlands B.V. | Method and apparatus for charged particle detection |
| CN111247618B (zh) * | 2017-09-26 | 2023-02-17 | Asml荷兰有限公司 | 通过反向散射粒子对掩埋特征的检测 |
| KR102392338B1 (ko) | 2017-10-13 | 2022-05-02 | 주식회사 히타치하이테크 | 패턴 계측 장치 및 패턴 계측 방법 |
| JP6865465B2 (ja) | 2017-11-10 | 2021-04-28 | 株式会社日立ハイテク | パターン計測装置および計測方法 |
| JP6541161B2 (ja) * | 2017-11-17 | 2019-07-10 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
| JP7137943B2 (ja) * | 2018-03-20 | 2022-09-15 | 株式会社日立ハイテク | 探索装置、探索方法及びプラズマ処理装置 |
| JP2019185972A (ja) * | 2018-04-06 | 2019-10-24 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡システム及びパターンの深さ計測方法 |
| JP2019184354A (ja) | 2018-04-06 | 2019-10-24 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡装置、電子顕微鏡装置を用いた検査システム及び電子顕微鏡装置を用いた検査方法 |
| JP2019211356A (ja) * | 2018-06-06 | 2019-12-12 | 株式会社日立ハイテクノロジーズ | パターン測定方法、パターン測定ツール、及びコンピュータ可読媒体 |
| US10714306B2 (en) * | 2018-06-11 | 2020-07-14 | Applied Materials Israel Ltd. | Measuring a height profile of a hole formed in non-conductive region |
| US10340116B1 (en) * | 2018-06-13 | 2019-07-02 | Applied Materials Israel Ltd. | Imaging an area that includes an upper surface and a hole |
| US11515120B2 (en) | 2018-09-21 | 2022-11-29 | Hitachi High-Tech Corporation | Charged particle beam apparatus |
| JP7120873B2 (ja) * | 2018-10-09 | 2022-08-17 | 株式会社日立製作所 | 計測装置及び試料の表面の計測方法 |
| KR102710529B1 (ko) * | 2018-11-05 | 2024-09-27 | 주식회사 히타치하이테크 | 패턴 계측 방법, 계측 시스템 및 컴퓨터 가독 매체 |
| JP7091263B2 (ja) * | 2019-01-22 | 2022-06-27 | 株式会社日立ハイテク | 電子顕微鏡及び3次元構造の深さ算出方法 |
| JP7199290B2 (ja) | 2019-04-08 | 2023-01-05 | 株式会社日立ハイテク | パターン断面形状推定システム、およびプログラム |
| US20220230842A1 (en) | 2019-05-08 | 2022-07-21 | Hitachi High-Tech Corporation | Pattern measurement system and pattern measurement method |
| US11139142B2 (en) * | 2019-05-23 | 2021-10-05 | Applied Materials, Inc. | High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy |
| JP7149906B2 (ja) | 2019-08-07 | 2022-10-07 | 株式会社日立ハイテク | 走査電子顕微鏡及びパタン計測方法 |
| KR102771899B1 (ko) * | 2019-09-03 | 2025-02-25 | 삼성전자주식회사 | 주사 전자 현미경 장치 및 그의 동작 방법 |
| CN110751622B (zh) * | 2019-09-05 | 2022-07-15 | 长江存储科技有限责任公司 | 半导体结构的检测方法及其检测装置 |
| US10943763B1 (en) * | 2019-09-24 | 2021-03-09 | Applied Materials, Inc. | Use of electron beam scanning electron microscopy for characterization of a sidewall occluded from line-of-sight of the electron beam |
| CN112967941B (zh) * | 2019-12-12 | 2022-04-26 | 长鑫存储技术有限公司 | 电容孔倾斜检测与反馈的方法、系统及存储介质 |
| US11056404B1 (en) * | 2019-12-18 | 2021-07-06 | Applied Materials Israel Ltd. | Evaluating a hole formed in an intermediate product |
| US11335608B2 (en) | 2020-04-15 | 2022-05-17 | Kla Corporation | Electron beam system for inspection and review of 3D devices |
| JP2022015476A (ja) | 2020-07-09 | 2022-01-21 | キオクシア株式会社 | 位置ずれ計測装置、位置ずれ計測方法、及び位置ずれ計測プログラム |
| US12176252B2 (en) | 2021-01-14 | 2024-12-24 | Changxin Memory Technologies, Inc. | Method and device for predicting inclination angle, and method and device for monitoring etching device |
| CN112713113B (zh) * | 2021-01-14 | 2022-05-24 | 长鑫存储技术有限公司 | 倾斜角度预测方法及装置、设备监控方法、介质及设备 |
| JP2022112137A (ja) * | 2021-01-21 | 2022-08-02 | 株式会社日立ハイテク | 荷電粒子ビーム装置 |
| JP2022170466A (ja) * | 2021-04-28 | 2022-11-10 | 株式会社日立ハイテク | 荷電粒子ビームシステム |
| JP7719865B2 (ja) * | 2021-05-28 | 2025-08-06 | 株式会社日立ハイテク | 深さ計測装置、深さ計測システム及び深さ指標値算出方法 |
| CN113466277B (zh) * | 2021-06-25 | 2022-05-10 | 长江存储科技有限责任公司 | 测试样品的制备方法及测试样品 |
| US11921063B2 (en) * | 2021-07-21 | 2024-03-05 | Applied Materials Israel Ltd. | Lateral recess measurement in a semiconductor specimen |
| CN113725113B (zh) * | 2021-08-30 | 2023-11-10 | 长江存储科技有限责任公司 | 半导体器件测量方法及装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5412210A (en) * | 1990-10-12 | 1995-05-02 | Hitachi, Ltd. | Scanning electron microscope and method for production of semiconductor device by using the same |
| JP3285092B2 (ja) * | 1990-10-12 | 2002-05-27 | 株式会社日立製作所 | 走査形電子顕微鏡、及び走査形電子顕微鏡による試料像形成方法 |
| JPH06310075A (ja) * | 1993-04-27 | 1994-11-04 | Hitachi Ltd | 走査型電子顕微鏡 |
| JP3749107B2 (ja) * | 1999-11-05 | 2006-02-22 | ファブソリューション株式会社 | 半導体デバイス検査装置 |
| JP2002110079A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 電子線装置 |
| JP2003157790A (ja) * | 2001-11-20 | 2003-05-30 | Advantest Corp | 微細凹凸量測定装置及び走査型電子顕微鏡 |
| WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
| JP2010175249A (ja) * | 2009-01-27 | 2010-08-12 | Hitachi High-Technologies Corp | 試料高さ測定方法及び試料高さ測定装置 |
| KR101411119B1 (ko) * | 2010-09-25 | 2014-06-25 | 가부시키가이샤 히다치 하이테크놀로지즈 | 하전 입자 빔 현미경 |
| JP5677236B2 (ja) * | 2011-08-22 | 2015-02-25 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP5814741B2 (ja) * | 2011-10-20 | 2015-11-17 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| JP5787746B2 (ja) * | 2011-12-26 | 2015-09-30 | 株式会社東芝 | 信号処理方法および信号処理装置 |
-
2013
- 2013-12-02 JP JP2013249249A patent/JP6316578B2/ja active Active
-
2014
- 2014-11-05 TW TW103138407A patent/TWI564926B/zh active
- 2014-11-19 US US15/039,527 patent/US9852881B2/en active Active
- 2014-11-19 KR KR1020167006631A patent/KR101762219B1/ko active Active
- 2014-11-19 WO PCT/JP2014/080661 patent/WO2015083548A1/ja not_active Ceased
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