JP6306466B2 - 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置 - Google Patents

不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置 Download PDF

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JP6306466B2
JP6306466B2 JP2014157136A JP2014157136A JP6306466B2 JP 6306466 B2 JP6306466 B2 JP 6306466B2 JP 2014157136 A JP2014157136 A JP 2014157136A JP 2014157136 A JP2014157136 A JP 2014157136A JP 6306466 B2 JP6306466 B2 JP 6306466B2
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memory
sram
nonvolatile
storage node
memory cell
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Japanese (ja)
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JP2016033842A (ja
JP2016033842A5 (enrdf_load_stackoverflow
Inventor
谷口　泰弘
泰弘 谷口
裕 品川
裕 品川
秀男 葛西
秀男 葛西
櫻井　良多郎
良多郎 櫻井
達郎 戸谷
達郎 戸谷
泰彦 川嶋
泰彦 川嶋
奥山　幸祐
幸祐 奥山
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Floadia Corp
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Floadia Corp
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Priority to JP2014157136A priority Critical patent/JP6306466B2/ja
Priority to PCT/JP2015/070806 priority patent/WO2016017496A1/ja
Priority to US15/329,312 priority patent/US9842650B2/en
Priority to TW104124289A priority patent/TWI651810B/zh
Publication of JP2016033842A publication Critical patent/JP2016033842A/ja
Publication of JP2016033842A5 publication Critical patent/JP2016033842A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP2014157136A 2014-07-31 2014-07-31 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置 Active JP6306466B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014157136A JP6306466B2 (ja) 2014-07-31 2014-07-31 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置
PCT/JP2015/070806 WO2016017496A1 (ja) 2014-07-31 2015-07-22 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置
US15/329,312 US9842650B2 (en) 2014-07-31 2015-07-22 Non-volatile SRAM memory cell, and non-volatile semiconductor storage device
TW104124289A TWI651810B (zh) 2014-07-31 2015-07-27 非揮發性靜態隨機存取記憶體記憶胞、及非揮發性半導體記憶裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014157136A JP6306466B2 (ja) 2014-07-31 2014-07-31 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2016033842A JP2016033842A (ja) 2016-03-10
JP2016033842A5 JP2016033842A5 (enrdf_load_stackoverflow) 2017-08-17
JP6306466B2 true JP6306466B2 (ja) 2018-04-04

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JP2014157136A Active JP6306466B2 (ja) 2014-07-31 2014-07-31 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置

Country Status (4)

Country Link
US (1) US9842650B2 (enrdf_load_stackoverflow)
JP (1) JP6306466B2 (enrdf_load_stackoverflow)
TW (1) TWI651810B (enrdf_load_stackoverflow)
WO (1) WO2016017496A1 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622059B2 (en) 2016-03-18 2020-04-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor based memory device
KR102506838B1 (ko) * 2016-09-30 2023-03-08 에스케이하이닉스 주식회사 반도체 장치 및 그의 동작 방법
CN108695328B (zh) * 2017-04-05 2021-08-17 联华电子股份有限公司 静态随机存取存储器元件及形成方法
US10249360B1 (en) * 2017-11-30 2019-04-02 National Tsing Hua University Method and circuit for generating a reference voltage in neuromorphic system
JP6734904B2 (ja) * 2018-11-01 2020-08-05 ウィンボンド エレクトロニクス コーポレーション 記憶回路
US11031078B2 (en) * 2019-03-08 2021-06-08 Microsemi Soc Corp. SEU stabilized memory cells
US11545218B2 (en) * 2019-12-31 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Nonvolatile SRAM

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298998A (ja) 1986-06-18 1987-12-26 Seiko Instr & Electronics Ltd 不揮発性ｒａｍ
WO2004086512A1 (ja) * 2003-03-26 2004-10-07 Fujitsu Limited 半導体記憶装置
DE102005001667B4 (de) * 2005-01-13 2011-04-21 Qimonda Ag Nichtflüchtige Speicherzelle zum Speichern eines Datums in einer integrierten Schaltung
CN103597545B (zh) * 2011-06-09 2016-10-19 株式会社半导体能源研究所 高速缓冲存储器及其驱动方法
JP5267623B2 (ja) * 2011-07-27 2013-08-21 凸版印刷株式会社 不揮発性メモリセルおよび不揮発性メモリ
JP2013190893A (ja) 2012-03-13 2013-09-26 Rohm Co Ltd マルチタスク処理装置
US8964470B2 (en) * 2012-09-25 2015-02-24 Aplus Flash Technology, Inc. Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays
JP5556873B2 (ja) * 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
JP6053474B2 (ja) 2012-11-27 2016-12-27 株式会社フローディア 不揮発性半導体記憶装置
JP6368526B2 (ja) * 2014-04-18 2018-08-01 株式会社フローディア 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
TW201611193A (zh) 2016-03-16
JP2016033842A (ja) 2016-03-10
US20170221563A1 (en) 2017-08-03
WO2016017496A1 (ja) 2016-02-04
TWI651810B (zh) 2019-02-21
US9842650B2 (en) 2017-12-12

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