JP6300662B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP6300662B2
JP6300662B2 JP2014127439A JP2014127439A JP6300662B2 JP 6300662 B2 JP6300662 B2 JP 6300662B2 JP 2014127439 A JP2014127439 A JP 2014127439A JP 2014127439 A JP2014127439 A JP 2014127439A JP 6300662 B2 JP6300662 B2 JP 6300662B2
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Prior art keywords
silicon substrate
semiconductor device
silicon
layer
substrate
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JP2014127439A
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Japanese (ja)
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JP2016006840A5 (enExample
JP2016006840A (ja
Inventor
晴久 齊藤
晴久 齊藤
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Olympus Corp
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Olympus Corp
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Priority to JP2014127439A priority Critical patent/JP6300662B2/ja
Priority to PCT/JP2015/061992 priority patent/WO2015194249A1/ja
Publication of JP2016006840A publication Critical patent/JP2016006840A/ja
Priority to US15/352,927 priority patent/US9954027B2/en
Publication of JP2016006840A5 publication Critical patent/JP2016006840A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Weting (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
JP2014127439A 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法 Expired - Fee Related JP6300662B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014127439A JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法
PCT/JP2015/061992 WO2015194249A1 (ja) 2014-06-20 2015-04-20 半導体装置および半導体装置の製造方法
US15/352,927 US9954027B2 (en) 2014-06-20 2016-11-16 Image pickup device and manufacturing method for image pickup device by stacking/bonding of crystalline silicon substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014127439A JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法

Publications (3)

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JP2016006840A JP2016006840A (ja) 2016-01-14
JP2016006840A5 JP2016006840A5 (enExample) 2017-07-27
JP6300662B2 true JP6300662B2 (ja) 2018-03-28

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JP2014127439A Expired - Fee Related JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法

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US (1) US9954027B2 (enExample)
JP (1) JP6300662B2 (enExample)
WO (1) WO2015194249A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12176348B2 (en) * 2021-11-30 2024-12-24 International Business Machines Corporation Self-aligned hybrid substrate stacked gate-all-around transistors
US12660339B2 (en) 2022-02-21 2026-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked CMOS image sensor
JP2023178689A (ja) 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685819B2 (ja) 1988-03-31 1997-12-03 株式会社東芝 誘電体分離半導体基板とその製造方法
JPH07297377A (ja) * 1994-04-21 1995-11-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
AU2003280857A1 (en) * 2002-11-18 2004-06-15 Hamamatsu Photonics K.K. Backside-illuminated photodiode array, method for manufacturing same, and semiconductor device
US7810740B2 (en) 2002-11-18 2010-10-12 Hamamatsu Photonics K.K. Back illuminated photodiode array, manufacturing method and semiconductor device thereof
JP2005053066A (ja) * 2003-08-04 2005-03-03 Seiko Epson Corp ノズルプレートの製造方法、インクジェットヘッド及びインクジェット記録装置
JP5577965B2 (ja) * 2010-09-02 2014-08-27 ソニー株式会社 半導体装置、および、その製造方法、電子機器
JP5581954B2 (ja) * 2010-10-07 2014-09-03 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP2012094720A (ja) * 2010-10-27 2012-05-17 Sony Corp 固体撮像装置、半導体装置、固体撮像装置の製造方法、半導体装置の製造方法、及び電子機器
JP5665599B2 (ja) 2011-02-24 2015-02-04 株式会社東芝 半導体装置および半導体装置の製造方法
JP5853389B2 (ja) * 2011-03-28 2016-02-09 ソニー株式会社 半導体装置及び半導体装置の製造方法。
JP5466338B2 (ja) * 2011-03-31 2014-04-09 富士フイルム株式会社 固体撮像装置及び固体撮像装置の製造方法
JP2013062382A (ja) 2011-09-13 2013-04-04 Toshiba Corp 半導体装置およびその製造方法
GB201121659D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices

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JP2016006840A (ja) 2016-01-14
US9954027B2 (en) 2018-04-24
WO2015194249A1 (ja) 2015-12-23
US20170062506A1 (en) 2017-03-02

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