JP2016006840A5 - - Google Patents

Download PDF

Info

Publication number
JP2016006840A5
JP2016006840A5 JP2014127439A JP2014127439A JP2016006840A5 JP 2016006840 A5 JP2016006840 A5 JP 2016006840A5 JP 2014127439 A JP2014127439 A JP 2014127439A JP 2014127439 A JP2014127439 A JP 2014127439A JP 2016006840 A5 JP2016006840 A5 JP 2016006840A5
Authority
JP
Japan
Prior art keywords
silicon substrate
semiconductor device
manufacturing
silicon
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014127439A
Other languages
English (en)
Japanese (ja)
Other versions
JP6300662B2 (ja
JP2016006840A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014127439A priority Critical patent/JP6300662B2/ja
Priority claimed from JP2014127439A external-priority patent/JP6300662B2/ja
Priority to PCT/JP2015/061992 priority patent/WO2015194249A1/ja
Publication of JP2016006840A publication Critical patent/JP2016006840A/ja
Priority to US15/352,927 priority patent/US9954027B2/en
Publication of JP2016006840A5 publication Critical patent/JP2016006840A5/ja
Application granted granted Critical
Publication of JP6300662B2 publication Critical patent/JP6300662B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014127439A 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法 Expired - Fee Related JP6300662B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014127439A JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法
PCT/JP2015/061992 WO2015194249A1 (ja) 2014-06-20 2015-04-20 半導体装置および半導体装置の製造方法
US15/352,927 US9954027B2 (en) 2014-06-20 2016-11-16 Image pickup device and manufacturing method for image pickup device by stacking/bonding of crystalline silicon substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014127439A JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2016006840A JP2016006840A (ja) 2016-01-14
JP2016006840A5 true JP2016006840A5 (enExample) 2017-07-27
JP6300662B2 JP6300662B2 (ja) 2018-03-28

Family

ID=54935246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014127439A Expired - Fee Related JP6300662B2 (ja) 2014-06-20 2014-06-20 半導体装置および半導体装置の製造方法

Country Status (3)

Country Link
US (1) US9954027B2 (enExample)
JP (1) JP6300662B2 (enExample)
WO (1) WO2015194249A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12176348B2 (en) * 2021-11-30 2024-12-24 International Business Machines Corporation Self-aligned hybrid substrate stacked gate-all-around transistors
US20230268372A1 (en) * 2022-02-21 2023-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685819B2 (ja) * 1988-03-31 1997-12-03 株式会社東芝 誘電体分離半導体基板とその製造方法
JPH07297377A (ja) * 1994-04-21 1995-11-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2004047178A1 (ja) * 2002-11-18 2004-06-03 Hamamatsu Photonics K.K. 裏面入射型ホトダイオードアレイ、その製造方法及び半導体装置
US7810740B2 (en) 2002-11-18 2010-10-12 Hamamatsu Photonics K.K. Back illuminated photodiode array, manufacturing method and semiconductor device thereof
JP2005053066A (ja) * 2003-08-04 2005-03-03 Seiko Epson Corp ノズルプレートの製造方法、インクジェットヘッド及びインクジェット記録装置
JP5577965B2 (ja) * 2010-09-02 2014-08-27 ソニー株式会社 半導体装置、および、その製造方法、電子機器
JP5581954B2 (ja) * 2010-10-07 2014-09-03 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP2012094720A (ja) * 2010-10-27 2012-05-17 Sony Corp 固体撮像装置、半導体装置、固体撮像装置の製造方法、半導体装置の製造方法、及び電子機器
JP5665599B2 (ja) * 2011-02-24 2015-02-04 株式会社東芝 半導体装置および半導体装置の製造方法
JP5853389B2 (ja) * 2011-03-28 2016-02-09 ソニー株式会社 半導体装置及び半導体装置の製造方法。
WO2012132760A1 (ja) * 2011-03-31 2012-10-04 富士フイルム株式会社 固体撮像装置及び固体撮像装置の製造方法
JP2013062382A (ja) 2011-09-13 2013-04-04 Toshiba Corp 半導体装置およびその製造方法
GB201121659D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices

Similar Documents

Publication Publication Date Title
JP2013033786A5 (ja) 半導体装置、半導体装置の製造方法、および電子機器
KR20220025792A (ko) 반도체 장치, 및, 반도체 장치의 제조 방법
US9748162B2 (en) Chip to wafer package with top electrodes and method of forming
CN103378115B (zh) 用于在cmos图像传感器中玻璃去除的方法和装置
TWI686937B (zh) 形成影像感測器積體電路封裝之方法
JP2015115420A5 (enExample)
TW200707603A (en) Backside method and system for fabricating semiconductor components with conductive interconnects
JP2015135938A5 (enExample)
JP5721370B2 (ja) 光センサの製造方法、光センサ及びカメラ
CN106206626A (zh) 弯曲图像传感器、其制备方法及具有弯曲图像传感器的电子器件
TW201603256A (zh) 固態成像裝置，固態成像元件之製造方法及成像設備
JP2013080838A5 (enExample)
US9647146B2 (en) Semiconductor device, manufacturing method, and electronic apparatus
JP2015065479A5 (enExample)
JP2014107448A5 (enExample)
US10403669B2 (en) Semiconductor device and electronic device having a chip size package (CSP) stack
US20160079303A1 (en) Manufacturing method of electronic device and manufacturing method of semiconductor device
JP2016006840A5 (enExample)
JP2013089871A5 (enExample)
CN104979370B (zh) 具有深沟槽隔离结构的背照式图像传感器的形成方法
JP2005322745A (ja) 半導体素子、半導体素子の製造方法、固体撮像素子、並びに固体撮像素子の製造方法
JP2007088450A5 (enExample)
JP6300662B2 (ja) 半導体装置および半導体装置の製造方法
JP2014003333A5 (ja) 固体撮像装置の製造方法
CN103117290B (zh) 背照式cmos影像传感器及其制造方法