JP6259909B2 - 基板開口を形成する方法 - Google Patents
基板開口を形成する方法 Download PDFInfo
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- JP6259909B2 JP6259909B2 JP2016516657A JP2016516657A JP6259909B2 JP 6259909 B2 JP6259909 B2 JP 6259909B2 JP 2016516657 A JP2016516657 A JP 2016516657A JP 2016516657 A JP2016516657 A JP 2016516657A JP 6259909 B2 JP6259909 B2 JP 6259909B2
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- 239000000758 substrate Substances 0.000 title claims description 115
- 238000000034 method Methods 0.000 title claims description 38
- 238000005530 etching Methods 0.000 claims description 30
- 230000000873 masking effect Effects 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 30
- 239000012634 fragment Substances 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
幾つかの実施形態においては、基板開口を形成する方法は、基板内に複数の横並び開口を形成することを含む。直接隣接する横並び開口のうちの少なくとも幾つかは、互いに異なる深さに基板内で形成される。非垂直側壁表面を有するより大きい開口を形成するために横並び開口間に横方向に存在する壁は除去され、壁は、除去される壁に直交し、側壁表面を通る少なくとも一つの直線垂直断面において除去された。
Claims (13)
- 基板内に、互いに均等な幅を有する複数のライン状の壁と当該複数のライン状の壁の個々によって仕切られた複数の横並び開口とを形成することであって、前記複数の横並び開口のうちの少なくとも幾つかは、それら開口の幅が互いに異なるように区画するパターンが形成された単一のマスクを用いたマスキングステップにおけるエッチングのマイクロローディング効果により、前記基板内で互いに異なる深さに形成されることと、
前記複数のライン状の壁を除去することにより、前記複数の横並び開口を互いに連結し、非垂直側壁表面を有する一つの大きな開口を形成することと、
を含む、
ことを特徴とする方法。 - 前記複数の横並び開口のうち、直接隣接する横並び開口のうちの幾つかだけが、前記基板内で互いに異なる深さに形成される、
ことを特徴とする請求項1に記載の方法。 - 前記複数の横並び開口のうち、直接隣接する各横並び開口は、前記基板内で互いに異なる深さである、
ことを特徴とする請求項1に記載の方法。 - 前記複数の横並び開口のうち、全ての横並び開口は、互いに異なる深さである、
ことを特徴とする請求項3に記載の方法。 - 前記複数の横並び開口のうち、前記横並び開口が、個々に一定の深さであるように形成される、ことを特徴とする請求項1に記載の方法。
- 前記非垂直側壁表面が、少なくとも一つの平面部分と少なくとも一つの曲面部分の組み合わせを有するように形成される、
ことを特徴とする請求項1に記載の方法。 - 前記非垂直側壁表面が、異なる角度の平面部分の組み合わせを有するように形成される、
ことを特徴とする請求項1に記載の方法。 - 前記複数の横並び開口のそれぞれは、第1の方向に沿って延在し、前記第1の方向に直交する第2の方向に沿って互いに配置される、
ことを特徴とする請求項1に記載の方法。 - 前記非垂直側壁表面は、前記第1の方向と交差する直線垂直断面において“V”形状であるように形成される、
ことを特徴とする請求項8に記載の方法。 - 前記非垂直側壁表面は、前記第1の方向と交差する直線垂直断面において“W”形状であるように形成される、
ことを特徴とする請求項8に記載の方法。 - 前記非垂直側壁表面は、前記第1の方向に並行な水平ベース表面を有するように形成される、
ことを特徴とする請求項8に記載の方法。 - 前記複数の横並び開口を形成することと、前記複数のライン状の壁を除去することとは、互いに別々の、異なる化学の、時間間隔の開いたエッチングステップを含む、
ことを特徴とする請求項1に記載の方法。 - 前記複数の横並び開口を形成することから、前記複数のライン状の壁を除去することまでは、単一の連続的エッチングステップを含む、
ことを特徴とする請求項1に記載の方法。
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US13/904,933 US9005463B2 (en) | 2013-05-29 | 2013-05-29 | Methods of forming a substrate opening |
PCT/US2014/035276 WO2014193569A1 (en) | 2013-05-29 | 2014-04-24 | Methods of forming a substrate opening |
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US20140357086A1 (en) | 2014-12-04 |
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TWI569324B (zh) | 2017-02-01 |
KR101970419B1 (ko) | 2019-04-18 |
SG11201508998PA (en) | 2015-12-30 |
TW201511126A (zh) | 2015-03-16 |
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CN105229775A (zh) | 2016-01-06 |
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CN105229775B (zh) | 2018-07-27 |
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