FR2985602B1 - Procede de gravure d'un motif complexe - Google Patents

Procede de gravure d'un motif complexe

Info

Publication number
FR2985602B1
FR2985602B1 FR1250098A FR1250098A FR2985602B1 FR 2985602 B1 FR2985602 B1 FR 2985602B1 FR 1250098 A FR1250098 A FR 1250098A FR 1250098 A FR1250098 A FR 1250098A FR 2985602 B1 FR2985602 B1 FR 2985602B1
Authority
FR
France
Prior art keywords
etching
complex pattern
complex
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1250098A
Other languages
English (en)
Other versions
FR2985602A1 (fr
Inventor
Bernard Diem
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1250098A priority Critical patent/FR2985602B1/fr
Priority to CN201380004918.7A priority patent/CN104039687A/zh
Priority to PCT/EP2013/050040 priority patent/WO2013102637A1/fr
Priority to EP13700005.5A priority patent/EP2800722A1/fr
Priority to US14/370,529 priority patent/US9187320B2/en
Publication of FR2985602A1 publication Critical patent/FR2985602A1/fr
Application granted granted Critical
Publication of FR2985602B1 publication Critical patent/FR2985602B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00619—Forming high aspect ratio structures having deep steep walls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0369—Static structures characterized by their profile
    • B81B2203/0392—Static structures characterized by their profile profiles not provided for in B81B2203/0376 - B81B2203/0384
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
FR1250098A 2012-01-05 2012-01-05 Procede de gravure d'un motif complexe Expired - Fee Related FR2985602B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1250098A FR2985602B1 (fr) 2012-01-05 2012-01-05 Procede de gravure d'un motif complexe
CN201380004918.7A CN104039687A (zh) 2012-01-05 2013-01-03 用于蚀刻复杂图案的方法
PCT/EP2013/050040 WO2013102637A1 (fr) 2012-01-05 2013-01-03 Procede de gravure d'un motif complexe
EP13700005.5A EP2800722A1 (fr) 2012-01-05 2013-01-03 Procede de gravure d'un motif complexe
US14/370,529 US9187320B2 (en) 2012-01-05 2013-01-03 Method for etching a complex pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1250098A FR2985602B1 (fr) 2012-01-05 2012-01-05 Procede de gravure d'un motif complexe

Publications (2)

Publication Number Publication Date
FR2985602A1 FR2985602A1 (fr) 2013-07-12
FR2985602B1 true FR2985602B1 (fr) 2014-03-07

Family

ID=47505023

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1250098A Expired - Fee Related FR2985602B1 (fr) 2012-01-05 2012-01-05 Procede de gravure d'un motif complexe

Country Status (5)

Country Link
US (1) US9187320B2 (fr)
EP (1) EP2800722A1 (fr)
CN (1) CN104039687A (fr)
FR (1) FR2985602B1 (fr)
WO (1) WO2013102637A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2974895B1 (fr) 2011-05-02 2013-06-28 Commissariat Energie Atomique Gyrometre a capacites parasites reduites
US9385132B2 (en) 2011-08-25 2016-07-05 Micron Technology, Inc. Arrays of recessed access devices, methods of forming recessed access gate constructions, and methods of forming isolation gate constructions in the fabrication of recessed access devices
FR2985602B1 (fr) 2012-01-05 2014-03-07 Commissariat Energie Atomique Procede de gravure d'un motif complexe
US9005463B2 (en) * 2013-05-29 2015-04-14 Micron Technology, Inc. Methods of forming a substrate opening
FR3008965B1 (fr) 2013-07-26 2017-03-03 Commissariat Energie Atomique Structure d'encapsulation comprenant un capot renforce mecaniquement et a effet getter
FR3018916B1 (fr) 2014-03-19 2017-08-25 Commissariat Energie Atomique Capteur de mesure de pression differentielle microelectromecanique et/ou nanoelectromecanique
HK1199605A2 (en) * 2014-04-23 2015-07-03 Master Dynamic Ltd A method of manufacture of micro components, and components formed by such a process
FR3021814B1 (fr) 2014-08-08 2018-06-15 Commissariat Energie Atomique Connecteur pour la connexion en matrice entre un boitier et un support, comportant un corps principal plie
FR3030876B1 (fr) * 2014-12-22 2017-12-15 Commissariat Energie Atomique Procede de realisation de motifs
CN106477514B (zh) * 2015-08-28 2018-03-30 中芯国际集成电路制造(上海)有限公司 Mems器件及其形成方法
FR3061902B1 (fr) * 2017-01-19 2019-04-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'une structure mems et/ou nems comportant au moins deux elements suspendus a un support a des distances differentes dudit support
US11181668B2 (en) 2018-07-13 2021-11-23 University Of Notre Dame Du Lac High contrast gradient index lens antennas

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH682528A5 (fr) * 1990-03-16 1993-09-30 Westonbridge Int Ltd Procédé de réalisation par attaque chimique d'au moins une cavité dans un substrat et substrat obtenu par ce procédé.
CN1060821C (zh) 1997-08-06 2001-01-17 复旦大学 多层硅微机械结构的掩模－无掩模腐蚀技术
DE19926769A1 (de) * 1999-06-13 2000-12-14 Max Planck Gesellschaft Verfahren zur Herstellung von dünnwandigen Strukturen in leitenden Materialien und nach dem Verfahren hergestellte Strukturen
US6884732B2 (en) 2001-10-15 2005-04-26 The Regents Of The University Of Michigan Method of fabricating a device having a desired non-planar surface or profile and device produced thereby
TW521062B (en) 2002-03-05 2003-02-21 Walsin Lihwa Corp Corner compensation method and structure constructed by the same
US7229745B2 (en) * 2004-06-14 2007-06-12 Bae Systems Information And Electronic Systems Integration Inc. Lithographic semiconductor manufacturing using a multi-layered process
US7307025B1 (en) * 2005-04-12 2007-12-11 Lam Research Corporation Lag control
JP2009269120A (ja) 2008-05-07 2009-11-19 Seiko Epson Corp シリコン構造体の製造方法
US8647945B2 (en) * 2010-12-03 2014-02-11 International Business Machines Corporation Method of forming substrate contact for semiconductor on insulator (SOI) substrate
FR2974895B1 (fr) 2011-05-02 2013-06-28 Commissariat Energie Atomique Gyrometre a capacites parasites reduites
FR2985602B1 (fr) 2012-01-05 2014-03-07 Commissariat Energie Atomique Procede de gravure d'un motif complexe
FR3008965B1 (fr) 2013-07-26 2017-03-03 Commissariat Energie Atomique Structure d'encapsulation comprenant un capot renforce mecaniquement et a effet getter

Also Published As

Publication number Publication date
US20140342557A1 (en) 2014-11-20
FR2985602A1 (fr) 2013-07-12
US9187320B2 (en) 2015-11-17
EP2800722A1 (fr) 2014-11-12
WO2013102637A1 (fr) 2013-07-11
CN104039687A (zh) 2014-09-10

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