JP6239566B2 - 圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法 - Google Patents

圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法 Download PDF

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Publication number
JP6239566B2
JP6239566B2 JP2015204179A JP2015204179A JP6239566B2 JP 6239566 B2 JP6239566 B2 JP 6239566B2 JP 2015204179 A JP2015204179 A JP 2015204179A JP 2015204179 A JP2015204179 A JP 2015204179A JP 6239566 B2 JP6239566 B2 JP 6239566B2
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Japan
Prior art keywords
thin film
piezoelectric thin
concentration
film
less
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JP2015204179A
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English (en)
Japanese (ja)
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JP2017076730A5 (enExample
JP2017076730A (ja
Inventor
柴田　憲治
憲治 柴田
渡辺　和俊
和俊 渡辺
文正 堀切
文正 堀切
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Sciocs Co Ltd
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Sumitomo Chemical Co Ltd
Sciocs Co Ltd
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Priority to JP2015204179A priority Critical patent/JP6239566B2/ja
Application filed by Sumitomo Chemical Co Ltd, Sciocs Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to EP21184166.3A priority patent/EP3922749B1/en
Priority to EP16855387.3A priority patent/EP3364471B1/en
Priority to US15/767,677 priority patent/US11107971B2/en
Priority to PCT/JP2016/080105 priority patent/WO2017065133A1/ja
Publication of JP2017076730A publication Critical patent/JP2017076730A/ja
Publication of JP2017076730A5 publication Critical patent/JP2017076730A5/ja
Application granted granted Critical
Publication of JP6239566B2 publication Critical patent/JP6239566B2/ja
Priority to US17/387,523 priority patent/US20210359195A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Acoustics & Sound (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Dispersion Chemistry (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2015204179A 2015-10-16 2015-10-16 圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法 Active JP6239566B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015204179A JP6239566B2 (ja) 2015-10-16 2015-10-16 圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法
EP16855387.3A EP3364471B1 (en) 2015-10-16 2016-10-11 Multilayer substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing same
US15/767,677 US11107971B2 (en) 2015-10-16 2016-10-11 Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element
PCT/JP2016/080105 WO2017065133A1 (ja) 2015-10-16 2016-10-11 圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法
EP21184166.3A EP3922749B1 (en) 2015-10-16 2016-10-11 Sputtering target for manufacturing piezoelectric thin films and method of manufacturing the sputtering target
US17/387,523 US20210359195A1 (en) 2015-10-16 2021-07-28 Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015204179A JP6239566B2 (ja) 2015-10-16 2015-10-16 圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法

Related Child Applications (1)

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JP2017211563A Division JP6502460B2 (ja) 2017-11-01 2017-11-01 圧電薄膜付き積層基板および圧電薄膜素子

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JP2017076730A JP2017076730A (ja) 2017-04-20
JP2017076730A5 JP2017076730A5 (enExample) 2017-10-12
JP6239566B2 true JP6239566B2 (ja) 2017-11-29

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US (2) US11107971B2 (enExample)
EP (2) EP3364471B1 (enExample)
JP (1) JP6239566B2 (enExample)
WO (1) WO2017065133A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239410B2 (en) 2017-03-28 2022-02-01 Tdk Corporation Piezoelectric composition and piezoelectric element
JP6872966B2 (ja) * 2017-05-10 2021-05-19 住友化学株式会社 圧電膜を有する積層基板、圧電膜を有するデバイスおよび圧電膜を有するデバイスの製造方法
JP6904101B2 (ja) * 2017-06-26 2021-07-14 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置および圧電デバイス
JP2019021994A (ja) * 2017-07-12 2019-02-07 株式会社サイオクス 圧電膜を有する積層基板、圧電膜を有する素子および圧電膜を有する積層基板の製造方法
JP7320098B2 (ja) * 2018-03-14 2023-08-02 住友化学株式会社 圧電積層体、圧電積層体の製造方法および圧電デバイス
JP7074512B2 (ja) * 2018-03-14 2022-05-24 住友化学株式会社 圧電積層体、圧電積層体の製造方法、圧電素子、およびスパッタリングターゲット材
JP7044600B2 (ja) 2018-03-14 2022-03-30 住友化学株式会社 圧電積層体、圧電積層体の製造方法および圧電デバイス
JP7352347B2 (ja) * 2018-12-07 2023-09-28 住友化学株式会社 圧電積層体、圧電素子および圧電積層体の製造方法
JP6756886B1 (ja) * 2019-04-26 2020-09-16 Ｊｘ金属株式会社 ニオブ酸カリウムナトリウムスパッタリングターゲット
JP7464360B2 (ja) * 2019-07-04 2024-04-09 住友化学株式会社 圧電積層体、圧電素子および圧電積層体の製造方法
JP7701778B2 (ja) * 2019-08-02 2025-07-02 住友化学株式会社 圧電積層体、および圧電素子
JP7626383B2 (ja) * 2019-08-02 2025-02-07 住友化学株式会社 圧電積層体、圧電素子および圧電積層体の製造方法
JP7362339B2 (ja) * 2019-08-02 2023-10-17 住友化学株式会社 圧電積層体、圧電素子、および圧電積層体の製造方法
JP7679976B2 (ja) * 2020-04-24 2025-05-20 ナショナル ユニヴァーシティー オブ シンガポール 圧電薄膜及びその作製方法
EP4174024A4 (en) * 2020-06-30 2024-10-09 Sumitomo Chemical Company, Limited Piezoelectric laminate, piezoelectric element, and method for manufacturing piezoelectric laminate
JP7320091B2 (ja) * 2021-02-10 2023-08-02 住友化学株式会社 圧電薄膜付き積層基板、圧電薄膜付き積層基板の製造方法、圧電薄膜素子、スパッタリングターゲット材、およびスパッタリングターゲット材の製造方法
JP7733503B2 (ja) 2021-08-23 2025-09-03 住友化学株式会社 圧電積層体、圧電積層体の製造方法、スパッタリングターゲット材、及びスパッタリングターゲット材の製造方法
JP2024141260A (ja) 2023-03-29 2024-10-10 住友化学株式会社 圧電積層体、圧電積層体の製造方法、及び圧電素子
JP2024141259A (ja) * 2023-03-29 2024-10-10 住友化学株式会社 圧電積層体、圧電積層体の製造方法、及び圧電素子

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294142B1 (en) * 1987-06-01 1992-03-25 Japan Pionics., Ltd. Method of cleaning exhaust gases
JP3531803B2 (ja) 1999-02-24 2004-05-31 株式会社豊田中央研究所 アルカリ金属含有ニオブ酸化物系圧電材料組成物
US6692652B2 (en) 2001-04-23 2004-02-17 Kabushiki Kaisha Toyota Chuo Kenkyusho Grain oriented ceramics
US6903491B2 (en) * 2001-04-26 2005-06-07 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, actuator, and inkjet head
JP4398635B2 (ja) * 2002-09-24 2010-01-13 株式会社ノリタケカンパニーリミテド 圧電セラミックス
JP4735840B2 (ja) 2005-12-06 2011-07-27 セイコーエプソン株式会社 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ
EP2009148A4 (en) * 2006-03-20 2011-05-25 Kanagawa Kagaku Gijutsu Akad GROUP III-V NITRIDE LAYER AND MANUFACTURING METHOD THEREFOR
JP2008159807A (ja) 2006-12-22 2008-07-10 Hitachi Cable Ltd 圧電薄膜素子及び圧電薄膜素子を用いて製造したアクチュエータとセンサ
JP5181538B2 (ja) 2007-06-06 2013-04-10 日立電線株式会社 圧電体及び圧電素子
JP5525143B2 (ja) * 2008-06-05 2014-06-18 日立金属株式会社 圧電薄膜素子及び圧電薄膜デバイス
JP5314963B2 (ja) * 2008-08-12 2013-10-16 富士フイルム株式会社 積層体、圧電素子、および液体吐出装置
JP5515675B2 (ja) 2009-11-20 2014-06-11 日立金属株式会社 圧電薄膜素子及び圧電薄膜デバイス
JP5531635B2 (ja) 2010-01-18 2014-06-25 日立金属株式会社 圧電薄膜素子及び圧電薄膜デバイス
JP5071503B2 (ja) 2010-03-25 2012-11-14 日立電線株式会社 圧電薄膜素子及び圧電薄膜デバイス
JP2011233817A (ja) * 2010-04-30 2011-11-17 Hitachi Cable Ltd 圧電体素子、その製造方法、及び圧電体デバイス
JP5056914B2 (ja) 2010-07-07 2012-10-24 日立電線株式会社 圧電薄膜素子および圧電薄膜デバイス
WO2012014504A1 (ja) * 2010-07-29 2012-02-02 Jx日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット及びその製造方法
JP5380756B2 (ja) * 2011-08-10 2014-01-08 日立金属株式会社 圧電体膜素子の製造方法
JP2013251355A (ja) * 2012-05-31 2013-12-12 Hitachi Cable Ltd 圧電体膜素子の製造方法、圧電体膜素子、及び圧電体デバイス
JP5858385B2 (ja) * 2012-08-07 2016-02-10 住友化学株式会社 圧電体素子、圧電体デバイス及びその製造方法
US20140084754A1 (en) * 2012-09-21 2014-03-27 Tdk Corporation Thin film piezoelectric device
JP6266987B2 (ja) * 2013-03-19 2018-01-24 住友化学株式会社 圧電薄膜素子、圧電センサ及び振動発電機
JP2014187094A (ja) 2013-03-22 2014-10-02 Hitachi Metals Ltd 圧電体薄膜積層基板、圧電体薄膜素子、およびそれらの製造方法
US9331262B2 (en) * 2013-05-20 2016-05-03 Tdk Corporation Thin film piezoelectric element, thin film piezoelectric actuator, thin film piezoelectric sensor, hard drive disk, and inkjet printer device
JP6044719B2 (ja) 2013-09-09 2016-12-14 株式会社村田製作所 圧電薄膜素子及びその製造方法
JP2015153850A (ja) 2014-02-13 2015-08-24 株式会社サイオクス 圧電体薄膜素子、その製造方法、および該圧電体薄膜素子を用いた電子デバイス
JP6521241B2 (ja) 2015-05-28 2019-05-29 セイコーエプソン株式会社 圧電素子及び圧電素子応用デバイス

Also Published As

Publication number Publication date
EP3922749A1 (en) 2021-12-15
EP3364471A4 (en) 2019-10-23
EP3922749B1 (en) 2024-12-04
EP3364471A1 (en) 2018-08-22
EP3364471B1 (en) 2021-07-14
US11107971B2 (en) 2021-08-31
US20210359195A1 (en) 2021-11-18
WO2017065133A1 (ja) 2017-04-20
JP2017076730A (ja) 2017-04-20
US20180301618A1 (en) 2018-10-18
EP3922749C0 (en) 2024-12-04

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