JP6232219B2 - 多層保護膜の形成方法 - Google Patents

多層保護膜の形成方法 Download PDF

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Publication number
JP6232219B2
JP6232219B2 JP2013136309A JP2013136309A JP6232219B2 JP 6232219 B2 JP6232219 B2 JP 6232219B2 JP 2013136309 A JP2013136309 A JP 2013136309A JP 2013136309 A JP2013136309 A JP 2013136309A JP 6232219 B2 JP6232219 B2 JP 6232219B2
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Japan
Prior art keywords
gas
silicon
film
protective film
forming
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Active
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JP2013136309A
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English (en)
Japanese (ja)
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JP2015012131A (ja
Inventor
哲也 高藤
哲也 高藤
幸夫 渡邉
幸夫 渡邉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2013136309A priority Critical patent/JP6232219B2/ja
Priority to TW103121009A priority patent/TWI665730B/zh
Priority to KR1020140077930A priority patent/KR20150002498A/ko
Priority to CN201410299457.7A priority patent/CN104250724B/zh
Publication of JP2015012131A publication Critical patent/JP2015012131A/ja
Priority to KR1020170074889A priority patent/KR102047591B1/ko
Application granted granted Critical
Publication of JP6232219B2 publication Critical patent/JP6232219B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP2013136309A 2013-06-28 2013-06-28 多層保護膜の形成方法 Active JP6232219B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013136309A JP6232219B2 (ja) 2013-06-28 2013-06-28 多層保護膜の形成方法
TW103121009A TWI665730B (zh) 2013-06-28 2014-06-18 Method for forming multilayer protective film and device for forming multilayer protective film
KR1020140077930A KR20150002498A (ko) 2013-06-28 2014-06-25 다층 보호막의 형성 방법 및 다층 보호막의 형성 장치
CN201410299457.7A CN104250724B (zh) 2013-06-28 2014-06-26 多层保护膜的形成方法和多层保护膜的形成装置
KR1020170074889A KR102047591B1 (ko) 2013-06-28 2017-06-14 다층 보호막의 형성 방법 및 다층 보호막의 형성 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013136309A JP6232219B2 (ja) 2013-06-28 2013-06-28 多層保護膜の形成方法

Publications (2)

Publication Number Publication Date
JP2015012131A JP2015012131A (ja) 2015-01-19
JP6232219B2 true JP6232219B2 (ja) 2017-11-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013136309A Active JP6232219B2 (ja) 2013-06-28 2013-06-28 多層保護膜の形成方法

Country Status (4)

Country Link
JP (1) JP6232219B2 (ko)
KR (2) KR20150002498A (ko)
CN (1) CN104250724B (ko)
TW (1) TWI665730B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6523071B2 (ja) * 2015-06-19 2019-05-29 東京エレクトロン株式会社 プラズマを用いた成膜方法
US11302717B2 (en) * 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JP6689140B2 (ja) 2016-06-17 2020-04-28 東京エレクトロン株式会社 成膜方法およびｔｆｔの製造方法
JP6924943B2 (ja) 2017-05-12 2021-08-25 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7130548B2 (ja) * 2018-07-30 2022-09-05 東京エレクトロン株式会社 成膜方法及び成膜装置
KR102151101B1 (ko) 2018-12-07 2020-09-02 연세대학교 산학협력단 산화물 반도체 박막 트랜지스터
JP7240946B2 (ja) 2019-04-26 2023-03-16 株式会社トリケミカル研究所 酸化珪素膜形成方法
CN110429024B (zh) 2019-08-08 2022-04-15 京东方科技集团股份有限公司 层间绝缘层及薄膜晶体管的制备方法
US11037851B2 (en) * 2019-08-30 2021-06-15 Applied Materials, Inc. Nitrogen-rich silicon nitride films for thin film transistors
JP7333758B2 (ja) 2020-01-23 2023-08-25 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7418703B2 (ja) * 2020-07-01 2024-01-22 日新電機株式会社 薄膜トランジスタ
JP7540867B2 (ja) * 2020-11-18 2024-08-27 東京エレクトロン株式会社 窒化シリコン膜の成膜方法及び成膜装置
JP2024069058A (ja) 2022-11-09 2024-05-21 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3148183B2 (ja) 1998-08-31 2001-03-19 日本電気株式会社 半導体装置の製造方法
JP2000114257A (ja) * 1998-10-06 2000-04-21 Toshiba Corp 半導体装置の製造方法
JP4955848B2 (ja) * 2000-02-28 2012-06-20 エルジー ディスプレイ カンパニー リミテッド 電子素子用基板製造方法
JP2002368084A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体集積回路装置の製造方法
US7696683B2 (en) * 2006-01-19 2010-04-13 Toppan Printing Co., Ltd. Organic electroluminescent element and the manufacturing method
JP2010087187A (ja) * 2008-09-30 2010-04-15 Tokyo Electron Ltd 酸化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置
JPWO2010038885A1 (ja) * 2008-09-30 2012-03-01 東京エレクトロン株式会社 窒化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置
JP5679143B2 (ja) * 2009-12-01 2015-03-04 ソニー株式会社 薄膜トランジスタならびに表示装置および電子機器
US9490368B2 (en) * 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8441010B2 (en) * 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103098185B (zh) * 2010-08-20 2017-02-08 应用材料公司 形成无氢含硅介电薄膜的方法
JP5604316B2 (ja) * 2011-01-19 2014-10-08 株式会社アルバック 成膜方法

Also Published As

Publication number Publication date
KR102047591B1 (ko) 2019-11-21
KR20150002498A (ko) 2015-01-07
JP2015012131A (ja) 2015-01-19
KR20170069991A (ko) 2017-06-21
CN104250724B (zh) 2018-05-29
TWI665730B (zh) 2019-07-11
CN104250724A (zh) 2014-12-31
TW201515106A (zh) 2015-04-16

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