JP6215919B2 - ジルコニア粒子を含むｃｍｐ組成物および使用方法 - Google Patents

ジルコニア粒子を含むｃｍｐ組成物および使用方法 Download PDF

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Publication number
JP6215919B2
JP6215919B2 JP2015514101A JP2015514101A JP6215919B2 JP 6215919 B2 JP6215919 B2 JP 6215919B2 JP 2015514101 A JP2015514101 A JP 2015514101A JP 2015514101 A JP2015514101 A JP 2015514101A JP 6215919 B2 JP6215919 B2 JP 6215919B2
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Prior art keywords
cmp composition
composition
mass
substrate
cmp
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English (en)
Japanese (ja)
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JP2015522669A5 (enExample
JP2015522669A (ja
Inventor
ウィーチャン チン
ウィーチャン チン
パーカー ジョン
パーカー ジョン
レムセン エリザベス
レムセン エリザベス
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CMC Materials LLC
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Cabot Microelectronics Corp
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Publication of JP2015522669A5 publication Critical patent/JP2015522669A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2015514101A 2012-05-22 2013-05-21 ジルコニア粒子を含むｃｍｐ組成物および使用方法 Active JP6215919B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/477,535 2012-05-22
US13/477,535 US8778212B2 (en) 2012-05-22 2012-05-22 CMP composition containing zirconia particles and method of use
PCT/US2013/041947 WO2013177110A1 (en) 2012-05-22 2013-05-21 Cmp composition containing zirconia particles and method of use

Publications (3)

Publication Number Publication Date
JP2015522669A JP2015522669A (ja) 2015-08-06
JP2015522669A5 JP2015522669A5 (enExample) 2016-07-07
JP6215919B2 true JP6215919B2 (ja) 2017-10-18

Family

ID=49620778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015514101A Active JP6215919B2 (ja) 2012-05-22 2013-05-21 ジルコニア粒子を含むｃｍｐ組成物および使用方法

Country Status (7)

Country Link
US (1) US8778212B2 (enExample)
EP (1) EP2852650B1 (enExample)
JP (1) JP6215919B2 (enExample)
KR (1) KR102135224B1 (enExample)
CN (1) CN104334674B (enExample)
TW (1) TWI484008B (enExample)
WO (1) WO2013177110A1 (enExample)

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JP7739305B2 (ja) * 2020-09-04 2025-09-16 花王株式会社 基板の洗浄方法
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
KR102638622B1 (ko) * 2021-07-22 2024-02-19 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
KR20230141967A (ko) * 2022-03-29 2023-10-10 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마 방법 및 반도체 기판의 제조 방법
KR20230172348A (ko) 2022-06-15 2023-12-22 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
TWI873734B (zh) 2022-07-29 2025-02-21 美商聖高拜陶器塑膠公司 用於進行材料移除操作之組成物及方法
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Also Published As

Publication number Publication date
US8778212B2 (en) 2014-07-15
CN104334674B (zh) 2016-08-17
TWI484008B (zh) 2015-05-11
TW201406888A (zh) 2014-02-16
KR102135224B1 (ko) 2020-07-17
US20130313225A1 (en) 2013-11-28
EP2852650A1 (en) 2015-04-01
CN104334674A (zh) 2015-02-04
EP2852650B1 (en) 2020-07-29
KR20150014974A (ko) 2015-02-09
JP2015522669A (ja) 2015-08-06
WO2013177110A1 (en) 2013-11-28
EP2852650A4 (en) 2016-02-24

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