JP2017526160A - 高い除去速度と低欠陥性を有する、ポリシリコン及び窒化物を上回り酸化物に対して選択的なcmp組成物 - Google Patents
高い除去速度と低欠陥性を有する、ポリシリコン及び窒化物を上回り酸化物に対して選択的なcmp組成物 Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
のポリマー、及び(c)水を含み、本質的にこれからなり、またはこれからなり、約1〜約4.5のpHを有する化学機械研磨組成物を提供する。
のポリマー、及び(c)水を含み、本質的にこれからなり、またはこれからなり、約1〜約4.5のpHを有する化学機械研磨組成物と接触させることと、(ii)研磨パッド及び化学機械研磨組成物を基材に対して動かすことと、(iii)基材の少なくとも一部を摩耗させて基材を研磨することとを含む、基材を化学機械研磨する方法も提供する。
のポリマー、及び(c)水を含み、本質的にこれからなり、またはこれからなり、約1〜約4.5のpHを有する化学機械研磨組成物を提供する。
のイオン性ポリマー、及び(b)ポリアクリレートから選択されるイオン性ポリマーを任意選択的に含む。
TEOSとポリシリコンとを含むシリコンウエハは、研磨組成物1A〜1Mと同じ条件で研磨した。研磨組成物は、表3に記載された組み合わせで、等量の表1及び2に記載の研磨剤配合物及び添加剤配合物を混合することによって得られた。研磨組成物1A〜1Mの各々のpHは、4に調整された。研磨組成物1A〜1Mのそれぞれは、0.4質量%の湿式セリアを含んでいた。
この例は、本発明の実施態様による本発明の研磨組成物によって示されるポリシリコン除去速度のばらつきの減少を示す。
この例は、湿式セリアと、本発明の実施態様による式Iのポリマーとを含む研磨組成物で観察されたディッシング及び浸食、並びにポリシリコン損失及び酸化物損失に対する効果を示す。
この例は、本発明の実施態様による式Iのポリマーを含む研磨組成物で観察されたディッシング及び浸食、並びに窒化ケイ素損失及び酸化物損失に対する効果を示す。
Claims (21)
- (a)約0.05質量%〜約10質量%のセリア研磨剤、
(b)約10ppm〜約1000ppmの式I:
Y1及びY2はOH、C1〜C10アルキル、及び式:CxHyFzの基から独立に選択され、
R1、R2、R3、及びR4は水素、F、C1〜C10アルキル、C6〜C10アリール、及びヘテロ芳香族から独立に選択され、
xは1〜約20の整数であり、
zは、1〜約41の整数であり、
mは約3〜約500の整数であり、かつ、
Y1又はY2の少なくとも一方がCxHyFzであるか、またはR1〜R4の少なくとも1つがFである。)
のポリマー、及び
(c)水
を含み、約1〜約4.5のpHを有する化学機械研磨組成物。 - Y1及びY2の各々がCxHyFzである、請求項1に記載の研磨組成物。
- X1及びX2の各々がOである、請求項1又は2に記載の研磨組成物。
- R1、R2、R3、及びR4が、独立に水素又はFである、請求項1〜3のいずれか1項に記載の研磨組成物。
- xが1〜9の整数である、請求項1〜4のいずれか1項に記載の研磨組成物。
- xが1〜8の整数であり、yが1〜40の整数である、請求項1〜4のいずれか1項に記載の研磨組成物。
- 前記ポリマーが約500ダルトン〜約10,000ダルトンの分子量を有し、mが8又はそれより大きい整数である、請求項1〜6のいずれか1項に記載の研磨組成物。
- 前記研磨組成物が、ポリビニルアルコールをさらに含む、請求項1〜8のいずれか1項に記載の研磨組成物。
- (i)基材を、研磨パッド並びに
(a)約0.05質量%〜約10質量%のセリア研磨剤、
(b)約10ppm〜約1000ppmの式I:
Y1及びY2はOH、C1〜C10アルキル、及び式:CxHyFzの基から独立に選択され、
R1、R2、R3、及びR4は水素、F、C1〜C10アルキル、C6〜C10アリール、及びヘテロ芳香族から独立に選択され、
xは1〜約20の整数であり、
zは、1〜約41の整数であり、
mは約3〜約500の整数であり、かつ、
Y1又はY2の少なくとも一方がCxHyFzであるか、またはR1〜R4の少なくとも1つがFである。)
のポリマー、及び
(c)水
を含み、約1〜約4.5のpHを有する化学機械研磨組成物と接触させることと、
(ii)前記研磨パッド及び前記化学機械研磨組成物を前記基材に対して動かすことと、(iii)前記基材の少なくとも一部を摩耗させて前記基材を研磨することと
を含む、基材を化学機械研磨する方法。 - Y1及びY2の各々がCxHyFzである、請求項10に記載の方法。
- X1及びX2の各々がOである、請求項10又は11に記載の方法。
- R1、R2、R3、及びR4の各々が、独立に水素又はFである、請求項10〜12のいずれか1項に記載の方法。
- xが1〜9の整数である、請求項10〜13のいずれか1項に記載の方法。
- xが1〜8の整数であり、yが1〜40の整数である、請求項10〜13のいずれか1項に記載の方法。
- 前記ポリマーが約500ダルトン〜約10,000ダルトンの分子量を有し、mが8又はそれより大きい整数である、請求項10〜15のいずれか1項に記載の方法。
- 前記研磨組成物がポリビニルアルコールをさらに含む、請求項10〜17のいずれか1項に記載の方法。
- 前記基材が酸化ケイ素を含み、前記酸化ケイ素の少なくとも一部を摩耗させて前記基材を研磨する、請求項10〜18のいずれか1項に記載の方法。
- 前記基材が窒化ケイ素をさらに含み、前記窒化ケイ素の少なくとも一部を摩耗させて前記基材を研磨する、請求項19に記載の方法。
- 前記基材がポリシリコンをさらに含み、前記ポリシリコンの少なくとも一部を摩耗させて前記基材を研磨する、請求項19又は20に記載の方法。
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US14/289,728 US9165489B2 (en) | 2013-05-21 | 2014-05-29 | CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity |
PCT/US2015/033277 WO2015184320A1 (en) | 2014-05-29 | 2015-05-29 | Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity |
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US20080149884A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
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