SG11201609999TA - Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity - Google Patents
Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivityInfo
- Publication number
- SG11201609999TA SG11201609999TA SG11201609999TA SG11201609999TA SG11201609999TA SG 11201609999T A SG11201609999T A SG 11201609999TA SG 11201609999T A SG11201609999T A SG 11201609999TA SG 11201609999T A SG11201609999T A SG 11201609999TA SG 11201609999T A SG11201609999T A SG 11201609999TA
- Authority
- SG
- Singapore
- Prior art keywords
- nitride
- removal rate
- high removal
- oxide over
- cmp compositions
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/289,728 US9165489B2 (en) | 2013-05-21 | 2014-05-29 | CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity |
PCT/US2015/033277 WO2015184320A1 (en) | 2014-05-29 | 2015-05-29 | Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201609999TA true SG11201609999TA (en) | 2016-12-29 |
Family
ID=54699892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201609999TA SG11201609999TA (en) | 2014-05-29 | 2015-05-29 | Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP3149101B1 (en) |
JP (1) | JP6595510B2 (en) |
KR (1) | KR102444552B1 (en) |
CN (1) | CN106414651B (en) |
SG (1) | SG11201609999TA (en) |
TW (1) | TWI530557B (en) |
WO (1) | WO2015184320A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9597768B1 (en) * | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
KR101628878B1 (en) * | 2015-09-25 | 2016-06-16 | 영창케미칼 주식회사 | Cmp slurry composition and polishing method using the same |
EP3526298A4 (en) * | 2016-10-17 | 2020-06-24 | Cabot Microelectronics Corporation | Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7112123B2 (en) * | 2004-06-14 | 2006-09-26 | Amcol International Corporation | Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces |
US20070218811A1 (en) * | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
KR100814416B1 (en) * | 2006-09-28 | 2008-03-18 | 삼성전자주식회사 | High planarity slurry composition and method of chemical mechanical polishing using the same |
US8591764B2 (en) * | 2006-12-20 | 2013-11-26 | 3M Innovative Properties Company | Chemical mechanical planarization composition, system, and method of use |
US20080149884A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
KR100949250B1 (en) * | 2007-10-10 | 2010-03-25 | 제일모직주식회사 | Metal CMP slurry compositions and polishing method using the same |
CN101623843A (en) * | 2009-07-31 | 2010-01-13 | 昆山光爱电子材料有限公司 | Manufacturing method of ultrathin crystal plate of low-pass optical filter |
JP5568641B2 (en) * | 2009-10-13 | 2014-08-06 | エルジー・ケム・リミテッド | CMP slurry composition and polishing method |
KR101675378B1 (en) * | 2010-02-25 | 2016-11-23 | 삼성전자주식회사 | slurry for polishing and planarizion method of insulator layer used the same |
CN102329572B (en) * | 2011-09-20 | 2013-08-21 | 深圳市力合材料有限公司 | Copper chemical and mechanical polishing combination |
US9165489B2 (en) * | 2013-05-21 | 2015-10-20 | Cabot Microelectronics Corporation | CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity |
-
2015
- 2015-05-19 TW TW104115865A patent/TWI530557B/en active
- 2015-05-29 JP JP2016570038A patent/JP6595510B2/en active Active
- 2015-05-29 EP EP15799304.9A patent/EP3149101B1/en active Active
- 2015-05-29 CN CN201580028684.9A patent/CN106414651B/en active Active
- 2015-05-29 SG SG11201609999TA patent/SG11201609999TA/en unknown
- 2015-05-29 KR KR1020167036308A patent/KR102444552B1/en active IP Right Grant
- 2015-05-29 WO PCT/US2015/033277 patent/WO2015184320A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR102444552B1 (en) | 2022-09-20 |
CN106414651B (en) | 2019-02-15 |
TW201544585A (en) | 2015-12-01 |
CN106414651A (en) | 2017-02-15 |
EP3149101B1 (en) | 2019-11-13 |
WO2015184320A1 (en) | 2015-12-03 |
EP3149101A4 (en) | 2018-01-24 |
KR20170012415A (en) | 2017-02-02 |
EP3149101A1 (en) | 2017-04-05 |
JP6595510B2 (en) | 2019-10-23 |
JP2017526160A (en) | 2017-09-07 |
TWI530557B (en) | 2016-04-21 |
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