JP2015522669A5 - - Google Patents
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- Publication number
- JP2015522669A5 JP2015522669A5 JP2015514101A JP2015514101A JP2015522669A5 JP 2015522669 A5 JP2015522669 A5 JP 2015522669A5 JP 2015514101 A JP2015514101 A JP 2015514101A JP 2015514101 A JP2015514101 A JP 2015514101A JP 2015522669 A5 JP2015522669 A5 JP 2015522669A5
- Authority
- JP
- Japan
- Prior art keywords
- cmp composition
- substrate
- acid
- trimethoxysilane
- aminopropyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003607 modifier Substances 0.000 claims description 11
- -1 alkyl carboxylic acid Chemical class 0.000 claims description 9
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 7
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 4
- WBUSESIMOZDSHU-UHFFFAOYSA-N 3-(4,5-dihydroimidazol-1-yl)propyl-triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN1CCN=C1 WBUSESIMOZDSHU-UHFFFAOYSA-N 0.000 claims description 3
- TZZGHGKTHXIOMN-UHFFFAOYSA-N 3-trimethoxysilyl-n-(3-trimethoxysilylpropyl)propan-1-amine Chemical group CO[Si](OC)(OC)CCCNCCC[Si](OC)(OC)OC TZZGHGKTHXIOMN-UHFFFAOYSA-N 0.000 claims description 3
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 3
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 claims description 3
- QIOYHIUHPGORLS-UHFFFAOYSA-N n,n-dimethyl-3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN(C)C QIOYHIUHPGORLS-UHFFFAOYSA-N 0.000 claims description 3
- DVYVMJLSUSGYMH-UHFFFAOYSA-N n-methyl-3-trimethoxysilylpropan-1-amine Chemical compound CNCCC[Si](OC)(OC)OC DVYVMJLSUSGYMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 10
- 238000005498 polishing Methods 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000007800 oxidant agent Substances 0.000 claims 6
- 239000002245 particle Substances 0.000 claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 150000007524 organic acids Chemical class 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 150000001413 amino acids Chemical class 0.000 claims 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims 2
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 claims 2
- 150000003457 sulfones Chemical class 0.000 claims 2
- 150000003462 sulfoxides Chemical class 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 1
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 claims 1
- 238000007790 scraping Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 150000003852 triazoles Chemical class 0.000 claims 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- RBYPITAQIDKLCJ-UHFFFAOYSA-N 3-(diethoxymethoxysilyl)propan-1-amine Chemical compound CCOC(OCC)O[SiH2]CCCN RBYPITAQIDKLCJ-UHFFFAOYSA-N 0.000 description 1
- UQGBCDGMUYQNLX-UHFFFAOYSA-N 3-[ethoxy(dimethoxy)silyl]propan-1-amine Chemical compound CCO[Si](OC)(OC)CCCN UQGBCDGMUYQNLX-UHFFFAOYSA-N 0.000 description 1
- RWLDCNACDPTRMY-UHFFFAOYSA-N 3-triethoxysilyl-n-(3-triethoxysilylpropyl)propan-1-amine Chemical compound CCO[Si](OCC)(OCC)CCCNCCC[Si](OCC)(OCC)OCC RWLDCNACDPTRMY-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- ZLDHYRXZZNDOKU-UHFFFAOYSA-N n,n-diethyl-3-trimethoxysilylpropan-1-amine Chemical compound CCN(CC)CCC[Si](OC)(OC)OC ZLDHYRXZZNDOKU-UHFFFAOYSA-N 0.000 description 1
- AQIQPUUNTCVHBS-UHFFFAOYSA-N n,n-dimethyl-3-triethoxysilylpropan-1-amine Chemical compound CCO[Si](OCC)(OCC)CCCN(C)C AQIQPUUNTCVHBS-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/477,535 US8778212B2 (en) | 2012-05-22 | 2012-05-22 | CMP composition containing zirconia particles and method of use |
| US13/477,535 | 2012-05-22 | ||
| PCT/US2013/041947 WO2013177110A1 (en) | 2012-05-22 | 2013-05-21 | Cmp composition containing zirconia particles and method of use |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015522669A JP2015522669A (ja) | 2015-08-06 |
| JP2015522669A5 true JP2015522669A5 (enExample) | 2016-07-07 |
| JP6215919B2 JP6215919B2 (ja) | 2017-10-18 |
Family
ID=49620778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015514101A Active JP6215919B2 (ja) | 2012-05-22 | 2013-05-21 | ジルコニア粒子を含むｃｍｐ組成物および使用方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8778212B2 (enExample) |
| EP (1) | EP2852650B1 (enExample) |
| JP (1) | JP6215919B2 (enExample) |
| KR (1) | KR102135224B1 (enExample) |
| CN (1) | CN104334674B (enExample) |
| TW (1) | TWI484008B (enExample) |
| WO (1) | WO2013177110A1 (enExample) |
Families Citing this family (22)
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| JP2017005050A (ja) | 2015-06-08 | 2017-01-05 | 信越化学工業株式会社 | 研磨組成物及びその製造方法並びに研磨方法 |
| EP3344716A4 (en) * | 2015-09-03 | 2019-04-10 | Cabot Microelectronics Corporation | METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE |
| KR102574851B1 (ko) * | 2015-12-17 | 2023-09-06 | 솔브레인 주식회사 | 화학기계적 연마 슬러리 조성물 |
| KR101761789B1 (ko) * | 2015-12-24 | 2017-07-26 | 주식회사 케이씨텍 | 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물 |
| CN106928859A (zh) * | 2015-12-31 | 2017-07-07 | 安集微电子科技(上海)有限公司 | 一种化学机械抛光液及其应用 |
| CN107587136A (zh) * | 2017-07-19 | 2018-01-16 | 合肥普庆新材料科技有限公司 | 一种粘度稳定的擦铜膏 |
| US10584265B2 (en) | 2017-09-28 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them |
| US10711158B2 (en) | 2017-09-28 | 2020-07-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them |
| US11186748B2 (en) | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
| US10508221B2 (en) | 2017-09-28 | 2019-12-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them |
| TW201936508A (zh) * | 2018-02-26 | 2019-09-16 | 日商丸善石油化學股份有限公司 | 表面修飾粒子及其製造方法 |
| KR102024758B1 (ko) | 2018-05-26 | 2019-09-25 | 에스케이이노베이션 주식회사 | 식각액 조성물, 절연막의 식각방법, 반도체 소자의 제조방법 및 실란화합물 |
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| US10982144B2 (en) * | 2018-09-03 | 2021-04-20 | Enf Technology Co., Ltd. | Silicon nitride layer etching composition and etching method using the same |
| KR102623640B1 (ko) * | 2020-07-22 | 2024-01-11 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| JP7739305B2 (ja) * | 2020-09-04 | 2025-09-16 | 花王株式会社 | 基板の洗浄方法 |
| KR102410845B1 (ko) * | 2021-01-08 | 2022-06-22 | 에스케이씨솔믹스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법 |
| KR102638622B1 (ko) * | 2021-07-22 | 2024-02-19 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법 |
| KR20230172348A (ko) * | 2022-06-15 | 2023-12-22 | 에스케이엔펄스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법 |
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2012
- 2012-05-22 US US13/477,535 patent/US8778212B2/en active Active
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2013
- 2013-05-13 TW TW102116906A patent/TWI484008B/zh active
- 2013-05-21 WO PCT/US2013/041947 patent/WO2013177110A1/en not_active Ceased
- 2013-05-21 CN CN201380026721.3A patent/CN104334674B/zh active Active
- 2013-05-21 JP JP2015514101A patent/JP6215919B2/ja active Active
- 2013-05-21 KR KR1020147035430A patent/KR102135224B1/ko active Active
- 2013-05-21 EP EP13793438.6A patent/EP2852650B1/en active Active