JP2017525796A5 - - Google Patents

Download PDF

Info

Publication number
JP2017525796A5
JP2017525796A5 JP2016575222A JP2016575222A JP2017525796A5 JP 2017525796 A5 JP2017525796 A5 JP 2017525796A5 JP 2016575222 A JP2016575222 A JP 2016575222A JP 2016575222 A JP2016575222 A JP 2016575222A JP 2017525796 A5 JP2017525796 A5 JP 2017525796A5
Authority
JP
Japan
Prior art keywords
colloidal silica
polishing
copper
composition
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016575222A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017525796A (ja
JP6612790B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2015/037772 external-priority patent/WO2015200684A1/en
Publication of JP2017525796A publication Critical patent/JP2017525796A/ja
Publication of JP2017525796A5 publication Critical patent/JP2017525796A5/ja
Priority to JP2019148753A priority Critical patent/JP6928040B2/ja
Application granted granted Critical
Publication of JP6612790B2 publication Critical patent/JP6612790B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016575222A 2014-06-25 2015-06-25 銅バリアの化学機械研磨組成物 Active JP6612790B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019148753A JP6928040B2 (ja) 2014-06-25 2019-08-14 銅バリアの化学機械研磨組成物

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462017100P 2014-06-25 2014-06-25
US201462017073P 2014-06-25 2014-06-25
US62/017,073 2014-06-25
US62/017,100 2014-06-25
PCT/US2015/037772 WO2015200684A1 (en) 2014-06-25 2015-06-25 Copper barrier chemical-mechanical polishing composition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019148753A Division JP6928040B2 (ja) 2014-06-25 2019-08-14 銅バリアの化学機械研磨組成物

Publications (3)

Publication Number Publication Date
JP2017525796A JP2017525796A (ja) 2017-09-07
JP2017525796A5 true JP2017525796A5 (enExample) 2018-07-12
JP6612790B2 JP6612790B2 (ja) 2019-11-27

Family

ID=54929831

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016575222A Active JP6612790B2 (ja) 2014-06-25 2015-06-25 銅バリアの化学機械研磨組成物
JP2019148753A Active JP6928040B2 (ja) 2014-06-25 2019-08-14 銅バリアの化学機械研磨組成物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019148753A Active JP6928040B2 (ja) 2014-06-25 2019-08-14 銅バリアの化学機械研磨組成物

Country Status (8)

Country Link
US (1) US9556363B2 (enExample)
EP (1) EP3161095B8 (enExample)
JP (2) JP6612790B2 (enExample)
KR (1) KR102444548B1 (enExample)
CN (1) CN106661431B (enExample)
SG (1) SG11201610332PA (enExample)
TW (1) TWI564380B (enExample)
WO (1) WO2015200684A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009042073A2 (en) * 2007-09-21 2009-04-02 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
TWI625372B (zh) 2016-01-06 2018-06-01 卡博特微電子公司 低介電基板之研磨方法
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
JPWO2018012173A1 (ja) * 2016-07-15 2019-05-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
CN110997856B (zh) * 2017-08-09 2021-10-29 昭和电工材料株式会社 研磨液和研磨方法
US10508221B2 (en) * 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
KR102576499B1 (ko) * 2018-09-06 2023-09-07 동우 화인켐 주식회사 Cmp용 실리카 입자 및 이의 제조방법
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US12227673B2 (en) 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US10988635B2 (en) 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
JP7065763B2 (ja) * 2018-12-27 2022-05-12 富士フイルム株式会社 薬液、被処理物の処理方法
GB201904918D0 (en) * 2019-04-08 2019-05-22 Givaudan Sa Improvements in or relating to organic compounds
KR102815121B1 (ko) * 2019-07-05 2025-06-04 후지필름 가부시키가이샤 조성물, 키트, 기판의 처리 방법
KR102525287B1 (ko) * 2019-10-18 2023-04-24 삼성에스디아이 주식회사 구리 막 연마용 cmp 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
KR102570805B1 (ko) * 2019-11-01 2023-08-24 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법
KR102367056B1 (ko) * 2020-02-27 2022-02-25 주식회사 케이씨텍 화학적 기계적 연마용 슬러리 조성물
US11384254B2 (en) * 2020-04-15 2022-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
TWI877406B (zh) * 2020-09-25 2025-03-21 日商福吉米股份有限公司 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法
CN113249175B (zh) * 2021-04-27 2023-03-24 上海新阳半导体材料股份有限公司 一种化学机械抛光后清洗液的应用
KR20220149148A (ko) 2021-04-30 2022-11-08 에스케이씨솔믹스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
KR102773634B1 (ko) * 2022-04-13 2025-02-25 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법
KR20230172348A (ko) * 2022-06-15 2023-12-22 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
CN115093795B (zh) * 2022-07-04 2023-09-01 深圳市永霖科技有限公司 一种面向半导体晶圆超精密抛光的磁流变抛光液
WO2024191746A1 (en) * 2023-03-15 2024-09-19 Versum Materials Us, Llc Soft polysiloxane core-shell abrasives for chemical mechanical planarization

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US6117783A (en) 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
AU5785700A (en) * 1999-07-07 2001-01-30 Cabot Microelectronics Corporation Cmp composition containing silane modified abrasive particles
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US20100146864A1 (en) * 2005-08-10 2010-06-17 Catalysts & Chemicals Industries Co., Ltd Nodular Silica Sol and Method of Producing the Same
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
US8106229B2 (en) 2006-05-30 2012-01-31 Nalco Company Organically modifid silica and use thereof
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
JP5275595B2 (ja) * 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
WO2009042073A2 (en) * 2007-09-21 2009-04-02 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
MY147729A (en) 2007-09-21 2013-01-15 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5428205B2 (ja) * 2008-06-04 2014-02-26 日立化成株式会社 金属用研磨液
JP5314329B2 (ja) * 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
EP2356192B1 (en) * 2008-09-19 2020-01-15 Cabot Microelectronics Corporation Barrier slurry for low-k dielectrics
US8529787B2 (en) * 2008-09-26 2013-09-10 Fuso Chemical Co., Ltd. Colloidal silica containing silica secondary particles having bent structure and/or branched structure, and method for producing same
JP2011216582A (ja) 2010-03-31 2011-10-27 Fujifilm Corp 研磨方法、および研磨液
US20110318928A1 (en) * 2010-06-24 2011-12-29 Jinru Bian Polymeric Barrier Removal Polishing Slurry
KR101243331B1 (ko) 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
US8980122B2 (en) * 2011-07-08 2015-03-17 General Engineering & Research, L.L.C. Contact release capsule useful for chemical mechanical planarization slurry
KR101349758B1 (ko) 2011-12-26 2014-01-10 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
JP5972660B2 (ja) 2012-03-28 2016-08-17 株式会社アドマテックス コロイドシリカの製造方法及びcmp用スラリーの製造方法

Similar Documents

Publication Publication Date Title
JP6612790B2 (ja) 銅バリアの化学機械研磨組成物
JP6612789B2 (ja) タングステンの化学機械研磨組成物
JP2017525796A5 (enExample)
KR102408747B1 (ko) 혼합 마모제 텅스텐 cmp 조성물
KR102390111B1 (ko) 혼합 마모제 텅스텐 cmp 조성물
TWI659078B (zh) 具有陽離子界面活性劑及環糊精的鎢加工漿液
JP6462013B2 (ja) コロイダルシリカ化学機械研磨組成物
KR102774705B1 (ko) 양이온성 계면활성제를 함유하는 텅스텐-가공 슬러리
KR20160135767A (ko) 텅스텐 버핑용 조성물