KR102444548B1 - 구리 배리어 화학적-기계적 연마 조성물 - Google Patents

구리 배리어 화학적-기계적 연마 조성물 Download PDF

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KR102444548B1
KR102444548B1 KR1020177001865A KR20177001865A KR102444548B1 KR 102444548 B1 KR102444548 B1 KR 102444548B1 KR 1020177001865 A KR1020177001865 A KR 1020177001865A KR 20177001865 A KR20177001865 A KR 20177001865A KR 102444548 B1 KR102444548 B1 KR 102444548B1
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Prior art keywords
colloidal silica
copper
polishing
composition
abrasive particles
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Korean (ko)
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KR20170026492A (ko
Inventor
린 푸
스티븐 그룸바인
제프리 디사르드
웨이 웽
레이 리우
알렉세이 레오노프
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씨엠씨 머티리얼즈, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/30625—
    • H01L21/31053—
    • H01L21/31055—
    • H01L21/3212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020177001865A 2014-06-25 2015-06-25 구리 배리어 화학적-기계적 연마 조성물 Active KR102444548B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462017100P 2014-06-25 2014-06-25
US201462017073P 2014-06-25 2014-06-25
US62/017,073 2014-06-25
US62/017,100 2014-06-25
PCT/US2015/037772 WO2015200684A1 (en) 2014-06-25 2015-06-25 Copper barrier chemical-mechanical polishing composition

Publications (2)

Publication Number Publication Date
KR20170026492A KR20170026492A (ko) 2017-03-08
KR102444548B1 true KR102444548B1 (ko) 2022-09-20

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Country Link
US (1) US9556363B2 (enExample)
EP (1) EP3161095B8 (enExample)
JP (2) JP6612790B2 (enExample)
KR (1) KR102444548B1 (enExample)
CN (1) CN106661431B (enExample)
SG (1) SG11201610332PA (enExample)
TW (1) TWI564380B (enExample)
WO (1) WO2015200684A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2188344B1 (en) * 2007-09-21 2016-04-27 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US20170194160A1 (en) * 2016-01-06 2017-07-06 Cabot Microelectronics Corporation Method of polishing a low-k substrate
US10421890B2 (en) 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
WO2018012173A1 (ja) * 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
KR102571098B1 (ko) * 2017-08-09 2023-08-24 가부시끼가이샤 레조낙 연마액 및 연마 방법
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10508221B2 (en) * 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
KR102576499B1 (ko) * 2018-09-06 2023-09-07 동우 화인켐 주식회사 Cmp용 실리카 입자 및 이의 제조방법
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US10988635B2 (en) 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
US12227673B2 (en) 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
JP7065763B2 (ja) * 2018-12-27 2022-05-12 富士フイルム株式会社 薬液、被処理物の処理方法
GB201904918D0 (en) * 2019-04-08 2019-05-22 Givaudan Sa Improvements in or relating to organic compounds
WO2021005980A1 (ja) * 2019-07-05 2021-01-14 富士フイルム株式会社 組成物、キット、基板の処理方法
KR102525287B1 (ko) * 2019-10-18 2023-04-24 삼성에스디아이 주식회사 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
KR102570805B1 (ko) * 2019-11-01 2023-08-24 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법
KR102367056B1 (ko) * 2020-02-27 2022-02-25 주식회사 케이씨텍 화학적 기계적 연마용 슬러리 조성물
US11384254B2 (en) * 2020-04-15 2022-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
TWI877406B (zh) * 2020-09-25 2025-03-21 日商福吉米股份有限公司 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法
CN113249175B (zh) * 2021-04-27 2023-03-24 上海新阳半导体材料股份有限公司 一种化学机械抛光后清洗液的应用
KR20220149148A (ko) 2021-04-30 2022-11-08 에스케이씨솔믹스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
KR102773634B1 (ko) * 2022-04-13 2025-02-25 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법
KR20230172348A (ko) * 2022-06-15 2023-12-22 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
CN115093795B (zh) * 2022-07-04 2023-09-01 深圳市永霖科技有限公司 一种面向半导体晶圆超精密抛光的磁流变抛光液
JP2026508589A (ja) * 2023-03-15 2026-03-11 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 化学機械平坦化のための軟質ポリシロキサンコア－シェル研磨剤

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090223136A1 (en) 2007-08-29 2009-09-10 Nippon Chemical Industrial Co., Ltd. (50%) Polishing compound for semiconductor wafer polishing and polishing method
JP2009295747A (ja) 2008-06-04 2009-12-17 Hitachi Chem Co Ltd 金属用研磨液

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
EP0852615B1 (en) 1996-07-25 2005-12-14 DuPont Air Products NanoMaterials L.L.C. Chemical mechanical polishing composition and process
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
HK1046151A1 (zh) * 1999-07-07 2002-12-27 卡伯特微电子公司 含硅烷改性研磨颗粒的化学机械抛光(cmp)组合物
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7022255B2 (en) 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
WO2007018069A1 (ja) * 2005-08-10 2007-02-15 Catalysts & Chemicals Industries Co., Ltd. 異形シリカゾルおよびその製造方法
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
US8106229B2 (en) 2006-05-30 2012-01-31 Nalco Company Organically modifid silica and use thereof
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
EP2188344B1 (en) 2007-09-21 2016-04-27 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
EP2197972B1 (en) 2007-09-21 2020-04-01 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5314329B2 (ja) * 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
WO2010033156A2 (en) 2008-09-19 2010-03-25 Cabot Microelectronics Corporation Barrier slurry for low-k dielectrics
CN102164853B (zh) * 2008-09-26 2014-12-31 扶桑化学工业株式会社 含有具有弯曲结构和/或分支结构的二氧化硅二次颗粒的胶体二氧化硅及其制造方法
JP2011216582A (ja) 2010-03-31 2011-10-27 Fujifilm Corp 研磨方法、および研磨液
US20110318928A1 (en) * 2010-06-24 2011-12-29 Jinru Bian Polymeric Barrier Removal Polishing Slurry
KR101243331B1 (ko) 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
US8980122B2 (en) * 2011-07-08 2015-03-17 General Engineering & Research, L.L.C. Contact release capsule useful for chemical mechanical planarization slurry
KR101349758B1 (ko) 2011-12-26 2014-01-10 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
JP5972660B2 (ja) 2012-03-28 2016-08-17 株式会社アドマテックス コロイドシリカの製造方法及びｃｍｐ用スラリーの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090223136A1 (en) 2007-08-29 2009-09-10 Nippon Chemical Industrial Co., Ltd. (50%) Polishing compound for semiconductor wafer polishing and polishing method
JP2009295747A (ja) 2008-06-04 2009-12-17 Hitachi Chem Co Ltd 金属用研磨液

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US9556363B2 (en) 2017-01-31
EP3161095B1 (en) 2021-05-19
EP3161095A4 (en) 2018-07-11
JP2019206718A (ja) 2019-12-05
JP6612790B2 (ja) 2019-11-27
KR20170026492A (ko) 2017-03-08
TW201614034A (en) 2016-04-16
US20150376463A1 (en) 2015-12-31
CN106661431A (zh) 2017-05-10
WO2015200684A1 (en) 2015-12-30
TWI564380B (zh) 2017-01-01
CN106661431B (zh) 2019-06-28
JP6928040B2 (ja) 2021-09-01
JP2017525796A (ja) 2017-09-07
SG11201610332PA (en) 2017-02-27
EP3161095B8 (en) 2021-07-07
EP3161095A1 (en) 2017-05-03

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