JP6211884B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP6211884B2 JP6211884B2 JP2013212670A JP2013212670A JP6211884B2 JP 6211884 B2 JP6211884 B2 JP 6211884B2 JP 2013212670 A JP2013212670 A JP 2013212670A JP 2013212670 A JP2013212670 A JP 2013212670A JP 6211884 B2 JP6211884 B2 JP 6211884B2
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- 238000003672 processing method Methods 0.000 title claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 87
- 238000004140 cleaning Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 6
- 238000005192 partition Methods 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02076—Cleaning after the substrates have been singulated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
図3に示すように、ウェーハWを反転させ、ウェーハWと略同径の表面保護テープ20に対面させ、ウェーハWの表面Wa側を表面保護テープ20に貼着する。その結果、ウェーハWの裏面Wbが上向きに露出した状態でウェーハWと表面保護テープ20とが一体となって形成される。
貼着ステップを実施した後、図4に示す研削手段30によってウェーハWの裏面Wbの研削行う。研削手段30は、鉛直方向の軸心を有するスピンドル31と、スピンドル31の下端においてマウント32を介して連結された研削ホイール33と、研削ホイール33の下部に環状に固着された研削砥石34とを少なくとも備えている。図示しないモータによって駆動されてスピンドル31が回転すると、研削ホイール33を所定の回転速度で回転させることができる。
研削ステップを実施した後、図5に示すように、中央部が開口した環状のフレーム21の下面にダイシングテープ22を貼着し、中央部から露出したダイシングテープ22にウェーハWの裏面Wb側を貼着する。その後、ウェーハWの表面Waから図3に示した表面保護テープ20を剥離する。
剥離ステップを実施した後、図1で示した切削装置1を用いてウェーハWに切削を施す。まず、フレーム21と一体となったウェーハWを、図1に示したカセット3に複数収容し、当該カセット3をカセット載置機構10に載置する。搬入出手段7は、カセット3の内部からウェーハWを取り出して、仮置き領域8に搬送する。その後、第1の搬送手段6aによって、仮置き領域8から保持テーブル4にウェーハWを搬送し、ウェーハWを保持した保持テーブル4がX軸方向に移動し切削手段5の下方にウェーハWを移動させる。
例えば、レーザビームを利用したアブレーション加工でフルカットしてもよいし、レーザビームでハーフカットしてウェーハWに加工溝を形成もしくはウェーハWの内部に改質層を形成して加工溝や改質層を起点に個々のチップCに分割してもよい。
分割ステップを実施した後、図1に示した第2の搬送手段6bによって、保持テーブル4から切削後のウェーハWを洗浄手段9に搬送する。洗浄手段9おいてウェーハWを洗浄しウェーハWに付着した切削屑を除去した後、第1の搬送手段6aによって洗浄後のウェーハWを仮置き領域8に搬送する。
洗浄ステップを実施した後、UV照射ユニット100によって洗浄後のウェーハWに紫外線を照射する。まず、図1(b)に示すように、昇降手段110が作動し、カセット3とともに、UV照射ユニット100の枠体101を上昇させる。次いで、搬入出手段7によって、ウェーハWを支持部102bに載置する。
照射ステップの実施と同時または照射ステップの実施前後においてダイシングテープ22の粘着力を低減するテープ粘着力低減ステップを実施する。照射ステップと同時に実施する場合には、図8に示すように、ウェーハWの上方に配置されているUVランプ106が、ウェーハWの上方からチップCの実装面C1に向けて少なくとも185nmの波長の紫外線と254nmの波長の紫外線とを照射するとともに、ウェーハWの下方に配置されているUVランプ106aによって、ウェーハWの下方からダイシングテープ22の全面に対して、例えば波長が300〜400nmであってピーク波長が365nmの紫外線を照射する。
テープ粘着力低減ステップを実施した後、図9に示すように、コレット40によってチップCを搬送する。コレット40は、チップCを吸着する吸着面を有しており、上下方向に移動可能となっている。コレット40は、チップCの実装面C1を吸着するとともに上昇することにより、チップCをダイシングテープ22からピックアップする。そして、全てのチップCがダイシングテープ22からピックアップされて搬送された時点でピックアップステップが終了する。
ピックアップステップを実施した後、図10に示すように、チップCを実装基板23に実装する。具体的には、図2に示したボール状のバンプBが形成されたチップCの実装面C1側を実装基板23に電気的に接続する。このようにして実装ステップが終了する。
したがって、ウェーハWのハンドリング中に付着した異物に加えて分割時に発生した異物も除去できることから、チップCの実装不良を低減することができる。
4,4a:保持テーブル 5:切削手段 50:スピンドル 51:ハウジング
52:切削ブレード 53:ブレードカバー 6a:第1の搬送手段
6b:第2の搬送手段 7:搬入出手段 8:仮置き領域 9:洗浄手段
10:カセット載置機構 100:UV照射ユニット
101:枠体 102a:カセット載置部 102b:支持部 102c:仕切り部
102d:底部 103:通気口 104:上部チャンバー 105:下部チャンバー
106,106a:UVランプ 107:オゾン処理室 108:フィルター
109:不活性ガス収容室 110:昇降手段 111:昇降台 112:ボールネジ
113:モータ 114:ガイドレール
20:表面保護テープ 21:フレーム 22:ダイシングテープ 23:実装基板
30:研削手段 31:スピンドル 32:マウント 33:研削ホイール 34:砥石
40:コレット
W:ウェーハ Wa:表面 Wb:裏面 S:分割予定ライン D:デバイス
B:バンプ G:溝 C:チップ C1:実装面
Claims (1)
- 交差する複数の分割予定ラインで区画されたウェーハ表面の各領域にデバイスが形成され、該デバイスの表面側が実装基板上に実装される実装面となるウェーハの加工方法であって、
のり層に離型剤が含まれる表面保護テープをウェーハの表面に貼着する貼着ステップと、
該貼着ステップを実施した後、該表面保護テープを介してウェーハを保持手段で保持してウェーハの裏面を研削する研削ステップと、
該研削ステップを実施した後、該表面保護テープをウェーハの表面から剥離する剥離ステップと、
該剥離ステップを実施した後、ウェーハを該分割予定ラインに沿って複数のチップへと分割する分割ステップと、
該分割ステップを実施した後、該チップの実装面に紫外線またはプラズマを照射してオゾンを生成するとともに活性酸素を生成して該実装面上の有機物を除去するとともに該実装面の撥水性を低減する照射ステップと、を備えるウェーハの加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013212670A JP6211884B2 (ja) | 2013-10-10 | 2013-10-10 | ウェーハの加工方法 |
TW103131007A TWI626681B (zh) | 2013-10-10 | 2014-09-09 | Wafer processing method |
KR1020140134781A KR102198116B1 (ko) | 2013-10-10 | 2014-10-07 | 웨이퍼의 가공 방법 |
US14/508,389 US9159623B2 (en) | 2013-10-10 | 2014-10-07 | Wafer processing method for removing organic debris |
CN201410526588.4A CN104576529B (zh) | 2013-10-10 | 2014-10-09 | 晶片的加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2013212670A JP6211884B2 (ja) | 2013-10-10 | 2013-10-10 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2015076545A JP2015076545A (ja) | 2015-04-20 |
JP6211884B2 true JP6211884B2 (ja) | 2017-10-11 |
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JP2013212670A Active JP6211884B2 (ja) | 2013-10-10 | 2013-10-10 | ウェーハの加工方法 |
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Country | Link |
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US (1) | US9159623B2 (ja) |
JP (1) | JP6211884B2 (ja) |
KR (1) | KR102198116B1 (ja) |
CN (1) | CN104576529B (ja) |
TW (1) | TWI626681B (ja) |
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CN107251212B (zh) * | 2016-01-29 | 2020-08-18 | 业纳光学系统有限公司 | 用于从晶片中取出微芯片并且将微芯片施装到基底上的方法和设备 |
DE102016203933A1 (de) | 2016-03-10 | 2017-09-14 | Bayerische Motoren Werke Aktiengesellschaft | Induktionsaufladesystem für Fahrzeug sowie Verwendung |
JP6938260B2 (ja) * | 2017-07-20 | 2021-09-22 | 株式会社ディスコ | ウエーハの研削方法 |
JP2020055091A (ja) * | 2018-10-04 | 2020-04-09 | 株式会社ディスコ | 被加工物の研削方法 |
KR102245294B1 (ko) | 2019-06-21 | 2021-04-28 | 세메스 주식회사 | 기판 지지 유닛 및 이를 갖는 기판 처리 장치 |
KR102433558B1 (ko) | 2019-07-11 | 2022-08-19 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
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AU7682594A (en) * | 1993-09-08 | 1995-03-27 | Uvtech Systems, Inc. | Surface processing |
JP2000223446A (ja) * | 1998-11-27 | 2000-08-11 | Denso Corp | 半導体装置およびその製造方法 |
JP4347960B2 (ja) * | 1999-09-14 | 2009-10-21 | 株式会社ディスコ | ダイシング方法 |
JP2004311576A (ja) * | 2003-04-03 | 2004-11-04 | Toshiba Corp | 半導体装置の製造方法 |
JP2006229021A (ja) | 2005-02-18 | 2006-08-31 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP4851132B2 (ja) * | 2005-07-20 | 2012-01-11 | 株式会社ディスコ | 加工装置及び加工方法 |
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TW201519295A (zh) | 2015-05-16 |
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