CN104576529B - 晶片的加工方法 - Google Patents
晶片的加工方法 Download PDFInfo
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Abstract
本发明的目的是提供一种晶片的加工方法,可减少芯片的安装不良。在通过实施分割步骤来将晶片(W)分割成一个个芯片(C)之后,实施照射步骤,从而向芯片(C)的安装面(C1)照射紫外线或者等离子体来生成臭氧并生成活性氧,去除附着在芯片(C)的安装面(C1)上的有机物。除了在晶片(W)的处理中附着的异物以外,还可以从芯片(C)的安装面(C1)去除在分割时产生的异物,能够减少芯片(C)的安装不良。
Description
技术领域
本发明涉及晶片的加工方法。
背景技术
近年来,为了实现封装的小型化和薄型化,广泛采用倒装芯片安装方式。倒装芯片安装方式是指这样的方式:在倒装芯片安装用的晶片的正面形成被称为焊块的突起电极,经由焊块使晶片的芯片与安装基板连接。该倒装芯片安装用的晶片,其正面为安装面,背面为被磨削的磨削面(例如,参照下述的专利文献1)。
作为用于将晶片分割成一个个芯片的方法,例如有以下的方法:沿着分割预定线照射激光束并在晶片上形成改质层之后,在安装于环状框架上的粘贴带上粘贴了晶片的状态下扩张该粘贴带,从而以改质层为破裂起点沿着分割预定线将晶片分割成一个个芯片(例如,参照下述的专利文献2)。
【专利文献1】日本特开2006-229021号公报
【专利文献2】日本特开2009-277778号公报
然而,由于晶片的分割多数情况是,在晶片的背面粘贴带,以晶片的正面向上露出的状态通过利用刀的切割或者激光照射来进行,因而在安装面即晶片的正面附着异物的危险高。特别是,当在切割时产生的带屑附着在晶片上时,即使对该晶片实施旋转清洗,也难以完全洗掉。然后,当在安装面上附着了异物时,很有可能发生安装不良。
发明内容
本发明是鉴于上述情况而作成的,本发明具有的发明应解决的课题是提供一种可减少芯片的安装不良的晶片的加工方法。
本发明是一种晶片的加工方法,其中,在晶片正面的由交叉的多个分割预定线划分出的各区域内形成有器件,该器件的正面侧为安装到安装基板上的安装面,所述晶片的加工方法具有:分割步骤,将晶片沿着该分割预定线分割成多个芯片;以及照射步骤,在实施了该分割步骤之后,向该芯片的安装面照射紫外线或等离子体来生成臭氧并生成活性氧,去除该安装面上的有机物。
并且,本发明可以在实施上述照射步骤之前实施以下步骤:粘贴步骤,在晶片的正面粘贴正面保护带;磨削步骤,在实施了该粘贴步骤之后,利用保持构件隔着该正面保护带保持晶片并磨削晶片的背面;以及剥离步骤,在实施了该磨削步骤之后,从晶片的正面剥离该正面保护带。
在本发明的晶片的加工方法中,在实施了分割步骤而将晶片分割成一个个芯片之后,实施照射步骤,向芯片的安装面照射紫外线或等离子体来生成臭氧并生成活性氧,去除附着在芯片的安装面上的有机物,因而除了在晶片的处理中附着的异物以外,还可以从芯片的安装面去除在分割时产生的异物,可以减少芯片的安装不良。
并且,本发明在实施粘贴步骤和磨削步骤之后,实施剥离步骤,因而尽管在正面保护带的剥离后由于正面保护带的糊层内包含的分型剂残留在晶片的正面而使晶片的正面的拨水性变高,然而通过在将晶片分割成一个个芯片之后实施上述照射步骤,因而可以减少变高的拨水性,可以减少由正面保护带的粘贴引起的芯片的安装不良。
附图说明
图1的(a)是示出切削装置的一例的立体图,(b)是示出盒和盒放置机构的结构的截面图。
图2是示出晶片结构的立体图。
图3是示出粘贴步骤的立体图。
图4是示出磨削步骤的立体图。
图5是示出剥离步骤的立体图。
图6是示出分割步骤的立体图。
图7是示出照射步骤的截面图。
图8是示出带粘贴力减少步骤的截面图。
图9是示出拾取步骤的截面图。
图10是示出安装步骤的截面图。
标号说明
1:切削装置;2:装置基部;3:盒;3a:开口部;3b:棚部;4、4a:保持工作台;5:切削构件;50:主轴;51:外壳;52:切削刀;53:刀盖;6a:第1运送构件;6b:第2运送构件;7:运入运出构件;8:临时放置区域;9:清洗构件;10:盒放置机构;100:紫外线照射单元;101:壳体;102a:盒放置部;102b:支撑部;102c:隔开部;102d:底部;103:通气口;104:上部室;105:下部室;106、106a:紫外线灯;107:臭氧处理室;108:过滤器;109:惰性气体收容室;110:升降构件;111:升降座;112:滚珠丝杠;113:电动机;114:导轨;20:正面保护带;21:框架;22:切割带;23:安装基板;30:磨削构件;31:主轴;32:底座;33:磨削轮;34:磨石;40:底托;W:晶片;Wa:正面;Wb:背面;S:分割预定线;D:器件;B:焊块;G:槽;C:芯片;C1:安装面。
具体实施方式
图1的(a)所示的切削装置1具有装置基部2,在装置基部2的上部具有:盒放置机构10,其放置有收容被加工物即晶片W的盒3;保持工作台4,其以能够旋转的方式保持晶片W;切削构件5,其进行保持在保持工作台4上的晶片W的切削;临时放置区域8,其临时放置晶片W;以及清洗构件9,其进行切削后的晶片W的清洗。保持工作台4可在X轴方向上移动。
切削构件5至少具有:主轴50,其具有Y轴方向的轴心;外壳51,以能够旋转的方式围绕主轴50;切削刀52,其安装在主轴50的前端;以及刀盖53,其以能够旋转的方式覆盖切削刀52。然后,切削构件5通过使主轴50旋转,可以使切削刀52以规定的旋转速度旋转。
切削装置1具有:第1运送构件6a,其在临时放置区域8和保持工作台4之间运送晶片W;运入运出构件7,其针对放置在盒放置机构10上的盒3运入并运出晶片W;以及第2运送构件6b,其将切削后的晶片从保持该晶片的保持工作台4运送到清洗构件9。
如图1的(b)所示,盒3的前部被开口,成为用于进行晶片W的运入运出的开口部3a。并且,在盒3的内部,在上下方向上隔开规定的间隔形成有用于支撑晶片W的棚部3b。
如图1的(b)所示,盒放置机构10具有:紫外线照射单元100,其向晶片W照射紫外线;以及升降构件110,其使放置在盒放置机构10上的盒3在Z轴方向上进行升降。紫外线照射单元100具有壳体101,该壳体101的上部为放置盒3的盒放置部102a。在壳体101的内部具有从下方支撑晶片W的支撑部102b。支撑部102b例如由玻璃等的透明部件形成。
支撑部102b的上侧为上部室104,支撑部102b的下侧为下部室105。在上部室104内,以整列状态配设有多个紫外线灯106。该紫外线灯106例如是低压水银灯,能够分别照射波长是184nm的紫外线和波长是254nm的紫外线。并且,取代紫外线灯106,可以使用可照射172nm的波长的紫外线的准分子紫外线灯,也可以使用产生大气压等离子体的等离子体产生装置。
在下部室105内,以整列状态配设有发出波长是300~400nm的紫外线的多个紫外线灯106a。在下部室105的下方,隔着隔开部102c形成有臭氧处理室107和收容氮气等的惰性气体的惰性气体收容室109。在臭氧处理室107内配设有过滤器108和排出风扇108a。臭氧处理室107经由通气孔103与上部室104连通。在臭氧处理室107中,可以将在上部室104产生的臭氧通过通气孔103和过滤器108进行吸引并处理。在隔开部102c内设置有开闭阀109a,惰性气体收容室109可以通过形成在隔开部102c内的开闭阀109a,将惰性气体供给到下部室105。
紫外线照射单元100通过升降构件110可上下移动地被支撑。升降构件110至少具有:升降座111,其从下方支撑壳体101的底部102d;滚珠丝杠112,其与形成在升降座111的端部内的螺母螺合;电动机113,其与滚珠丝杠112的下端连接;以及导轨114,其与滚珠丝杠112平行地延伸。然后,电动机113可以转动滚珠丝杠112,使升降座111在上下方向上移动。
下面,对图2所示的晶片W的加工方法进行说明。晶片W是圆形的被加工物的一例,在由多个纵横交叉的分割预定线S划分出的一个个区域内形成有器件D。在晶片W中,形成有器件D的面为正面Wa,在与正面Wa相反侧的面为图1所示的保持在保持工作台4上的背面Wb。在形成于晶片W的正面Wa的器件D内,如部分放大图所示,形成有突起电极即球状的焊块B。
(1)粘贴步骤
如图3所示,使晶片W反转,使其与直径大致和晶片W相同的正面保护带20相对,将晶片W的正面Wa侧粘贴在正面保护带20上。其结果,在晶片W的背面Wb向上露出的状态下,晶片W和正面保护带20成为一体而形成。
(2)磨削步骤
在实施了粘贴步骤之后,利用图4所示的磨削构件30进行晶片W的背面Wb的磨削。磨削构件30至少具有:主轴31,其具有垂直方向的轴心;磨削轮33,其在主轴31的下端经由底座32连接;以及磨削磨石34,其呈环状固定在磨削轮33的下部。当由未图示的电动机驱动而使主轴31旋转时,可以使磨削轮33以规定的旋转速度旋转。
在磨削晶片W时,在以能够旋转的方式保持被加工物的保持工作台4a上放置正面保护带20侧。在利用未图示的吸引源将晶片W吸引保持在保持工作台4a上之后,在使保持工作台4a例如在箭头A方向上旋转的同时,磨削构件30使磨削轮33例如在箭头A方向上旋转,同时磨石34下降到与晶片W的背面Wb接触。然后,在磨石34按压背面Wb的同时,磨削晶片W,直至达到期望的厚度。
(3)剥离步骤
在实施了磨削步骤之后,如图5所示,在中央部开口的环状框架21的下面粘贴切割带22,在从中央部露出的切割带22上粘贴晶片W的背面Wb侧。之后,从晶片W的正面Wa剥离图3所示的正面保护带20。
(4)分割步骤
在实施了剥离步骤之后,使用图1所示的切削装置1对晶片W实施切削。首先,将与框架21成一体的多个晶片W收容在图1所示的盒3内,将该盒3放置在盒放置机构10上。运入运出构件7从盒3的内部取出晶片W,运送到临时放置区域8。之后,利用第1运送构件6a将晶片W从临时放置区域8运送到保持工作台4,保持了晶片W的保持工作台4在X轴方向上移动并使晶片W移动到切削构件5的下方。
如图6所示,在使晶片W在X轴方向上移动的同时,切削构件5通过使主轴50旋转,使切削刀52以规定的旋转速度在箭头A1方向上旋转的同时,使切削刀52在Z轴方向上下降。通过使切削刀52沿着朝向X轴方向的一列的分割预定线S切入并切削,形成了槽G之后,使切削构件5在Y轴方向上分度进给的同时,在朝向X轴方向的全部分割预定线S上重复进行上述切削来形成槽G。之后,使晶片W旋转90度,使朝向Y轴方向的分割预定线S朝向X轴方向重复进行上述相同的切削,在全部分割预定线S上形成槽G。这样,将晶片W进行全切割来分割成图7所示的一个个芯片C。
分割步骤不限于利用切削构件5进行全切割的情况。例如,可以在利用激光束的烧蚀加工中进行全切割,也可以使用激光束进行半切割并在晶片W内形成加工槽或者在晶片W的内部形成改质层,以加工槽或改质层为起点分割成一个个芯片C。
(5)清洗步骤
在实施了分割步骤之后,利用图1所示的第2运送构件6b,将切削后的晶片W从保持工作台4运送到清洗构件9。在清洗构件9中清洗晶片W并去除附着在晶片W上的切削屑之后,利用第1运送构件6a将清洗后的晶片W运送到临时放置区域8。
(6)照射步骤
在实施了清洗步骤之后,利用紫外线照射单元100对清洗后的晶片W照射紫外线。首先,如图1的(b)所示,升降构件110进行工作,使紫外线照射单元100的壳体101与盒3一起上升。然后,利用运入运出构件7,将晶片W放置在支撑部102b上。
在晶片W被放置于支撑部102b上之后,如图7所示,利用多个紫外线灯106将波长是185nm的紫外线和波长是254nm的紫外线向芯片C的正面侧的安装面C1照射。此时,在大气中的氧(O2)中吸收波长是185nm的紫外线而生成臭氧(O3)。而且,当在所产生的该臭氧(O3)中吸收了波长是254nm的紫外线时,生成活性氧。该活性氧对附着在芯片C的安装面C1上的有机物(例如,切削屑、带屑)进行分解,从而可以从芯片C的安装面C1去除有机物。另外,在照射步骤中,在图1的(b)所示的上部室104中产生的臭氧通过通气口103和过滤器108被吸引到臭氧处理室107,由排出风扇108a排出到外部。
在粘贴步骤中,由于在晶片W的正面Wa上粘贴正面保护带20,因而在剥离步骤中剥离了正面保护带20之后,在安装面C1上还残留有正面保护带20的糊层内包含的分型剂。然后,由于该分型剂而使安装面C1的拨水性变高,在该状态下进行了后面的安装步骤时,容易发生安装不良。然而,当通过照射步骤向安装面C1照射了紫外线或等离子体时,可以减轻安装面C1的变高的拨水性,因而可以减少由正面保护带的粘贴引起的芯片的安装不良。
在取代紫外线灯106而使用等离子体产生装置来实施了照射步骤的情况下,通过照射大气压等离子体,可以去除附着在芯片C的安装面C1上的有机物,并将被照射了大气压等离子体的安装面C1变为亲水性或疏水性,可以进一步减少在安装面C1中变高的拨水性。亲水性或疏水性可以根据使用的气体来选择。并且,在盒放置机构10中应用了等离子体产生装置的情况下,由于不需要室,因而能够使装置结构简单,可以抑制过程成本。
照射步骤可以在分割了晶片W之后、在将芯片C安装于安装基板上之前实施,不限定于在切削装置1中进行的方式。例如,可以使用对扩张带进行扩张来分割被加工物的扩张装置、从带拾取被加工物的拾取装置灯进行照射步骤。
(7)带粘贴力减少步骤
在与照射步骤的实施同时或者在照射步骤的实施前后实施减少切割带22的粘贴力的带粘贴力减少步骤。在与照射步骤同时实施的情况下,如图8所示,配置在晶片W的上方的紫外线灯106从晶片W的上方向芯片C的安装面C1至少照射185nm的波长的紫外线和254nm的波长的紫外线,并且利用配置在晶片W的下方的紫外线灯106a从晶片W的下方向切割带22的整面照射例如波长是300~400nm且峰值波长是365nm的紫外线。
此时,打开图1的(b)所示的隔开部102c的开闭阀109a并从惰性气体收容室109向下部室105供给惰性气体。由此,可以将从紫外线灯106a透射支撑部102b照射的紫外线高效率地照射到图8所示的切割带22。其结果,由于切割带22硬化而使粘贴力下降,因而容易从切割带22剥离芯片C。
(8)拾取步骤
在实施了带粘贴力减少步骤之后,如图9所示,利用底托40运送芯片C。底托40具有吸附芯片C的吸附面,可在上下方向上移动。底托40通过吸附芯片C的安装面C1并使其上升,从切割带22拾取芯片C。然后,在全部芯片C从切割带22被拾取并被运送的时点,拾取步骤结束。
(9)安装步骤
在实施了拾取步骤之后,如图10所示,将芯片C安装在安装基板23上。具体地,使形成有图2所示的球状的焊块B的芯片C的安装面C1侧与安装基板23电连接。这样,安装步骤结束。
如以上所述,本实施方式所示的晶片的加工方法在实施分割步骤并将晶片W分割成一个个芯片C之后,实施照射步骤,因而可以向芯片C的安装面C1照射紫外线或等离子体来生成臭氧(O3)并生成活性氧,去除附着在芯片C的安装面C1上的有机物。因此,除了在晶片W的处理中附着的异物以外,还可以去除在分割时产生的异物,因而可以减少芯片C的安装不良。
并且,在实施粘贴步骤和磨削步骤之后,实施剥离步骤,因而尽管在正面保护带20的剥离后由于正面保护带20的糊层内包含的分型剂残留在晶片W的正面Wa而使正面Wa的拨水性变高,然而通过在将晶片分割成一个个芯片C之后实施上述照射步骤,因而可以减少变高的拨水性,可以减少芯片C的安装不良。
Claims (1)
1.一种晶片的加工方法,在晶片的正面的由交叉的多个分割预定线划分出的各区域内形成有器件,该器件的正面侧为安装到安装基板上的安装面,
所述晶片的加工方法具有:
粘贴步骤,在晶片的正面粘贴正面保护带,其中,在所述正面保护带的糊层内包含有分型剂;
磨削步骤,在实施了该粘贴步骤之后,使用保持构件隔着该正面保护带保持晶片并磨削晶片的背面;
剥离步骤,在实施了该磨削步骤之后,从晶片的正面剥离该正面保护带;
分割步骤,在实施了该剥离步骤之后,沿着该分割预定线将晶片分割成多个芯片;以及
照射步骤,在实施了该分割步骤之后,向该芯片的安装面照射紫外线或等离子体来生成臭氧并生成活性氧,去除该安装面上的有机物并降低该安装面的拨水性。
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