JP6200054B2 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

Info

Publication number
JP6200054B2
JP6200054B2 JP2016198316A JP2016198316A JP6200054B2 JP 6200054 B2 JP6200054 B2 JP 6200054B2 JP 2016198316 A JP2016198316 A JP 2016198316A JP 2016198316 A JP2016198316 A JP 2016198316A JP 6200054 B2 JP6200054 B2 JP 6200054B2
Authority
JP
Japan
Prior art keywords
layer
film
oxide semiconductor
transistor
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016198316A
Other languages
Japanese (ja)
Other versions
JP2017005279A (en
Inventor
山崎 舜平
舜平 山崎
磯部 敦生
敦生 磯部
義紀 家田
義紀 家田
永井 雅晴
雅晴 永井
Original Assignee
株式会社半導体エネルギー研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2011264973 priority Critical
Priority to JP2011265036 priority
Priority to JP2011265158 priority
Priority to JP2011265036 priority
Priority to JP2011265158 priority
Priority to JP2011264973 priority
Priority to JP2011283789 priority
Priority to JP2011283789 priority
Application filed by 株式会社半導体エネルギー研究所 filed Critical 株式会社半導体エネルギー研究所
Publication of JP2017005279A publication Critical patent/JP2017005279A/en
Application granted granted Critical
Publication of JP6200054B2 publication Critical patent/JP6200054B2/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66969Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41733Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Description

The present invention relates to a technique for miniaturizing a semiconductor integrated circuit. The invention disclosed in this specification includes an element constituted by a compound semiconductor in addition to a silicon semiconductor as an element constituting a semiconductor integrated circuit, and an example in which a wide gap semiconductor is applied is disclosed as an example. .

Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

A dynamic RAM (DRAM) using a silicon substrate as a semiconductor memory device is a well-known product and is still used in various electronic devices today. A memory cell constituting the core part of the DRAM is composed of a write and read transistor and a capacitor.

DRAM is an example of a volatile storage device, and another example of a volatile storage device is an SRAM (
(Static Random Access Memory). An SRAM uses a circuit such as a flip-flop to hold stored contents, and therefore does not require a refresh operation. In this respect, the SRAM is more advantageous than a DRAM. However, since a circuit such as a flip-flop is used, there is a problem that the unit price per storage capacity increases. Further, there is no difference from DRAM in that the stored contents are lost when power supply is lost.

An example of a nonvolatile storage device is a flash memory. Flash memory
Since a floating gate is provided between a gate electrode of a transistor and a channel formation region and data is stored by holding electric charge in the floating gate, a data holding period is extremely long (semi-permanent). There is an advantage that a necessary refresh operation is unnecessary.

However, since the gate insulating layer included in the memory element is deteriorated by a tunnel current generated at the time of writing, there is a problem that the memory element does not function by repeating writing many times. In order to avoid this problem, for example, a method of equalizing the number of times of writing in each storage element is employed, but in order to realize this, a complicated peripheral circuit is required. And even if such a method is adopted, the fundamental problem of lifetime is not solved. That is, the flash memory is not suitable for applications where the information rewriting frequency is high.

Further, a high voltage is required to inject charges into the floating gate or to remove the charges. Furthermore, it takes a relatively long time to inject or remove charges, and there is a problem that it is not easy to speed up writing and erasing.

Although a volatile memory device represented by a DRAM or the like uses a silicon substrate and miniaturizes a circuit pattern in accordance with a scaling rule like other semiconductor integrated circuits, it is difficult to make the design rule 100 nm or less. There was also a time when it was considered. One of the reasons is that when the channel length of the transistor is 100 nm or less, a punch-through current easily flows due to the short channel effect, and the transistor does not function as a switching element. However, to prevent punch-through current, it is only necessary to dope a silicon substrate with a high concentration of impurities, but doing so makes it easier for junction leakage current to flow between the source and the substrate or between the drain and the substrate, ultimately reducing the retention characteristics of the memory. It was not appropriate as a solution to this problem.

Patent Document 1 discloses a technology that uses a transistor including an oxide semiconductor layer as a memory.

Non-Patent Document 1 discloses that the channel length of a transistor using IGZO having an amorphous structure is 50 nm.

An object is to provide a semiconductor device including an oxide semiconductor layer and a transistor having a channel length of less than 50 nm and a manufacturing method thereof.

Further, when the channel length is shortened, parasitic channel leakage becomes a problem. Thus, it is an object to provide a transistor structure that reduces leakage of a parasitic channel.

Another object is to provide a semiconductor device with a new structure that can retain stored contents even when power is not supplied and has no limit on the number of writings.

A first channel formation region is provided in a substrate including a semiconductor material such as single crystal silicon.
A second transistor having an oxide semiconductor layer as a channel formation region is provided over the transistor. In the second transistor, a conductive film formed in contact with the oxide semiconductor layer is selectively etched to form a source electrode layer and a drain electrode layer.

The distance between the source electrode layer and the drain electrode layer of the second transistor is the channel length L of the second transistor. In order to set the channel length L to less than 50 nm, the resist is exposed using an electron beam, and the developed mask is used as an etching mask for the conductive film.

In the structure of the invention disclosed in this specification, a gate insulating layer is formed over a gate electrode layer, an oxide semiconductor layer is formed over the gate insulating layer, and the first conductive layer and the second conductive layer are formed over the oxide semiconductor layer. A conductive layer is formed, a conductive film is formed over the first conductive layer and the second conductive layer, a resist is formed over the conductive film, and exposure using an electron beam (also referred to as electron beam exposure) is performed. Then, the conductive film is selectively etched to form a third conductive layer on the first conductive layer and a fourth conductive layer on the second conductive layer, and the third conductive layer and the fourth conductive layer are formed. The distance between the conductive layers is smaller than the distance between the first conductive layer and the second conductive layer, the first conductive layer and the third conductive layer are source electrodes, and the second conductive layer and the fourth conductive layer The conductive layer is a method for manufacturing a semiconductor device which is a drain electrode.

A semiconductor device obtained by the above manufacturing method also has a feature, and includes a gate electrode layer over a semiconductor substrate, an oxide semiconductor layer that overlaps the gate electrode layer over the gate electrode layer, and an oxide semiconductor layer A first conductive layer, a third conductive layer in contact with the first conductive layer, a second conductive layer on the oxide semiconductor layer, and a fourth conductive layer in contact with the second conductive layer And an insulating layer which is in contact with the third conductive layer and the fourth conductive layer and is partly in contact with the oxide semiconductor layer. The distance between the third conductive layer and the fourth conductive layer is the first The first conductive layer and the third conductive layer are source electrodes, and the second conductive layer and the fourth conductive layer are drain electrodes. This is a featured semiconductor device.

Note that in the above semiconductor device, a conductive film is stacked over the oxide semiconductor layer, a third conductive layer is provided in contact with the first conductive layer, and a fourth conductive layer is provided in contact with the second conductive layer. The fifth may be provided
The conductive layer may be formed on the third conductive layer, and the sixth conductive layer may be formed on the fourth conductive layer. Another structure of the invention disclosed in this specification includes a gate electrode layer over a semiconductor substrate, an oxide semiconductor layer overlying the gate electrode layer over the gate electrode layer, a first conductive layer over the oxide semiconductor layer, A third conductive layer in contact with the first conductive layer, a fifth conductive layer in contact with the third conductive layer, a second conductive layer on the oxide semiconductor layer, and a second conductive layer A fourth conductive layer in contact with the fourth conductive layer, a sixth conductive layer in contact with the fourth conductive layer, a contact with the fifth conductive layer and the sixth conductive layer, and part of the oxide semiconductor layer An insulating layer in contact with the first conductive layer, and a distance between the fifth conductive layer and the sixth conductive layer is set to
And the first conductive layer, the third conductive layer, and the fifth conductive layer are source electrodes, and the second conductive layer and the fourth conductive layer are narrower than the distance between the conductive layer and the second conductive layer. , And the sixth conductive layer is a drain electrode.

In the above method for manufacturing a semiconductor device, a gate insulating layer is formed over a gate electrode layer, an oxide semiconductor layer is formed over the gate insulating layer, and the first conductive layer and the second conductive layer are formed over the oxide semiconductor layer. And forming a conductive film over the first conductive layer and the second conductive layer, forming a resist over the conductive film, performing electron beam exposure, and selectively etching the conductive film The fifth conductive layer is formed on the first conductive layer, and the sixth conductive layer is formed on the second conductive layer. The distance between the fifth conductive layer and the sixth conductive layer is the same as that of the first conductive layer. The first conductive layer and the fifth conductive layer are source electrodes, and the second conductive layer and the sixth conductive layer are drain electrodes. Note that in the above structure, the third conductive layer is provided between the first conductive layer and the fifth conductive layer, and the fourth conductive layer is provided between the second conductive layer and the sixth conductive layer.

In each of the above manufacturing methods, the distance between the third conductive layer and the fourth conductive layer is determined by electron beam exposure, and the distance between the first conductive layer and the second conductive layer is determined by exposure using a photomask. This is a method for manufacturing a semiconductor device.

In addition, by changing the process order from the structure of the manufacturing method described above, the first conductive layer and the second conductive layer are formed using a mask using electron beam exposure, and then exposed using a photomask. The third conductive layer and the fourth conductive layer may be formed, and the structure of another invention disclosed in this specification is as follows.
A gate insulating layer is formed over the gate electrode layer, an oxide semiconductor layer is formed over the gate insulating layer, a conductive film is formed over the oxide semiconductor layer, a positive resist is formed over the conductive film, and an electron After performing the beam exposure, the conductive film is selectively etched to form a first conductive layer and a second conductive layer, and a third conductive layer partially in contact with the first conductive layer; A fourth conductive layer that is partially in contact with the first conductive layer, and a distance between the first conductive layer and the second conductive layer is smaller than a distance between the third conductive layer and the fourth conductive layer, The first conductive layer and the third conductive layer are source electrodes, and the second conductive layer and the fourth conductive layer
The conductive layer is a drain electrode, which is a method for manufacturing a semiconductor device. In the above manufacturing process, the width of the oxide semiconductor layer in the channel length direction is wider than the width of the gate electrode layer in the channel length direction. Accordingly, for example, oxygen can be easily supplied to the oxide semiconductor layer from an insulating layer below the oxide semiconductor layer.

In the above manufacturing method, the distance between the first conductive layer and the second conductive layer is determined by electron beam exposure, and the distance between the third conductive layer and the fourth conductive layer is determined by exposure using a photomask. This is a method for manufacturing a semiconductor device. In the above structure, the channel length of the semiconductor device is a distance between the first conductive layer and the second conductive layer.

The oxide semiconductor layer may have a desired shape such as an island shape (e.g., photolithography technology)
In the case of a (pattern shape), the end surface of the oxide semiconductor layer may be exposed to an etching gas, an atmospheric component, moisture, or the like, and the end surface may have a low resistance. Therefore, when the layout is such that a channel formation region with a channel length of less than 50 nm is formed in the vicinity of the end surface of the oxide semiconductor layer, leakage may increase. Therefore, between the source electrode layer and the drain electrode layer, a channel formation region having a channel length L of less than 50 nm and an interval L ′ wider than the channel length L
And a layout provided with a region having. With such a layout, parasitic channel leakage can be reduced. Note that the channel formation region is a region having the shortest distance in the distance between the source electrode layer and the drain electrode layer of the second transistor.

In another structure disclosed in this specification, a gate insulating layer is formed over a gate electrode layer, an oxide semiconductor layer is formed over the gate insulating layer, a conductive film is formed over the oxide semiconductor layer, A positive resist is formed over the conductive film, electron beam exposure is performed, the conductive film is etched to form openings with different widths, and the first conductive layer with a different interval over the oxide semiconductor layer and Forming a second conductive layer, forming a third conductive layer partially in contact with the first conductive layer, and forming a fourth conductive layer partially in contact with the second conductive layer; And the second conductive layer are narrower than the third conductive layer and the fourth conductive layer, the first conductive layer and the third conductive layer are source electrodes, and the second conductive layer and the second conductive layer In the method for manufacturing a semiconductor device, the fourth conductive layer is a drain electrode.

In the above structure, the first conductive layer and the second conductive layer are spaced apart from each other over the oxide semiconductor layer.
In the conductive layer, the interval is determined by electron beam exposure. However, a photomask may be used for the wider interval, and the structure of another invention is that a gate insulating layer is formed on the gate electrode layer, An oxide semiconductor layer is formed over the layer, a conductive film is formed over the oxide semiconductor layer, a positive resist is formed over the conductive film, electron beam exposure is performed, and first etching is performed. Further, the conductive film is subjected to the second etching using the first mask, and the third etching is performed using the second mask to form the first conductive layer and the second conductive layer. A third conductive layer that is partially in contact with the conductive layer and a fourth conductive layer that is partially in contact with the second conductive layer are formed, and the distance between the first conductive layer and the second conductive layer is third. The distance between the conductive layer and the fourth conductive layer is narrower, and the first conductive layer and the third conductive layer are source electrodes. There, the second conductive layer and the fourth conductive layer is a method for manufacturing a semiconductor device which is a drain electrode.

In the above configuration, the first distance that is the shortest distance between the first conductive layer and the second conductive layer is determined by electron beam exposure, and the second distance between the first conductive layer and the second conductive layer. Is characterized by being determined by exposure using a photomask. In the above structure, the first conductive layer overlapping the oxide semiconductor layer and the second conductive layer overlapping the oxide semiconductor layer are
One of the characteristics is that the first gap has a second gap wider than the first gap, and the first gap is the same as the channel length of the transistor.

In each of the above structures, the gate insulating layer is planarized, which is a method for manufacturing a semiconductor device. By flattening the gate insulating layer, the resist formed above the gate insulating layer can be precisely exposed when electron beam exposure is performed.

The oxide semiconductor layer is preferably a highly purified layer that hardly contains impurities such as copper, aluminum, and chlorine. In the transistor manufacturing process, it is preferable to appropriately select a process in which these impurities are not mixed or attached to the surface of the oxide semiconductor layer. When the impurity is attached to the surface of the oxide semiconductor layer, oxalic acid or dilute hydrofluoric acid is preferably used. Exposure to
Alternatively, it is preferable to remove impurities on the surface of the oxide semiconductor layer by performing plasma treatment (such as N 2 O plasma treatment). Specifically, the copper concentration of the oxide semiconductor layer is 1 × 10 1.
8 atoms / cm 3 or less, preferably 1 × 10 17 atoms / cm 3 or less. In addition, the aluminum concentration of the oxide semiconductor layer is 1 × 10 18 atoms / cm 3 or less.
The chlorine concentration in the oxide semiconductor layer is 2 × 10 18 atoms / cm 3 or less.

The oxide semiconductor layer is preferably in a supersaturated state with more oxygen than the stoichiometric composition immediately after film formation. For example, in the case where an oxide semiconductor layer is formed by a sputtering method, the film formation is preferably performed under a condition where the proportion of oxygen in the film formation gas is large, and the film formation is performed particularly in an oxygen atmosphere (oxygen gas 100%). It is preferable. When the film is formed in a condition where the proportion of oxygen in the film forming gas is large, particularly in an atmosphere containing 100% oxygen gas, the release of Zn from the film can be suppressed even when the film forming temperature is set to 300 ° C. or higher.

The oxide semiconductor layer is preferably highly purified by sufficiently removing impurities such as hydrogen or by being supplied with sufficient oxygen to be in a supersaturated state. Specifically, the hydrogen concentration of the oxide semiconductor layer is 5 × 10 19 atoms / cm 3 or less, desirably 5 × 10 18 atoms / cm 3 or less, and more desirably 5 × 10 17 atoms.
oms / cm 3 or less. Note that the hydrogen concentration in the above-described oxide semiconductor layer is determined by secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometer).
measured by y). In addition, since sufficient oxygen is supplied to bring the oxygen into a supersaturated state, an insulating layer containing excess oxygen (SiO x or the like) is provided so as to surround the oxide semiconductor layer.

As the insulating layer containing excess oxygen, a SiO x film or a silicon oxynitride film containing a large amount of oxygen in a film by appropriately setting film forming conditions in the PCVD method or the sputtering method is used. In addition, when a large amount of excess oxygen is to be included in the insulating layer, oxygen is added by an ion implantation method, an ion doping method, or plasma treatment.

When the hydrogen concentration of the insulating layer containing excess oxygen is 7.2 × 10 20 atoms / cm 3 or more, an increase in variation in initial characteristics of the transistor, an increase in channel length dependency on the electrical characteristics of the transistor, and Since the BT stress test greatly deteriorates, the hydrogen concentration of the insulating layer containing excess oxygen is set to less than 7.2 × 10 20 atoms / cm 3 . That is, it is preferable that the oxide semiconductor layer have a hydrogen concentration of 5 × 10 19 atoms / cm 3 or less and the insulating layer containing excess oxygen has a hydrogen concentration of less than 7.2 × 10 20 atoms / cm 3 .

Further, the oxide semiconductor layer is wrapped and disposed outside the insulating layer containing excess oxygen.
It is preferable to provide a blocking layer (such as AlO x ) that suppresses oxygen release from the oxide semiconductor layer.

A state in which the oxide semiconductor layer substantially accords with the stoichiometric composition by wrapping the oxide semiconductor layer with an insulating layer or blocking layer containing excess oxygen, or a supersaturated state in which oxygen is higher than the stoichiometric composition It can be. For example, in the case where the oxide semiconductor layer is IGZO, an example of the stoichiometric composition is In: Ga: Zn: O = 1: 1: 1: 4 [atomic ratio]. The atomic ratio of oxygen contained in IGZO is greater than four.

According to the present invention, a semiconductor device including a transistor using an oxide semiconductor layer and having a channel length of less than 50 nm can be realized. In addition, a transistor configuration that reduces the leakage of the parasitic channel can be realized.

In addition, a semiconductor device having a memory that can retain stored contents even when power is not supplied and has no limit on the number of writing times can be realized.

4A and 4B are a cross-sectional view and a top view illustrating one embodiment of the present invention. FIG. 6 is an equivalent circuit diagram illustrating one embodiment of the present invention. 4A and 4B are a top view and a cross-sectional view of a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 9A and 9B are a cross-sectional view and a circuit diagram illustrating one embodiment of a semiconductor device. FIG. 14 is a perspective view illustrating one embodiment of a semiconductor device. FIG. 14 is a cross-sectional view illustrating one embodiment of a semiconductor device. FIG. 11 illustrates an electronic device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A and 4B are a cross-sectional view and a top view of a semiconductor device of one embodiment of the present invention. FIG. 6 is a top view of a semiconductor device of one embodiment of the present invention. 4A and 4B are a top view and a cross-sectional view of a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A and 4B are a cross-sectional view and a top view illustrating one embodiment of the present invention. 4A and 4B are a top view and a cross-sectional view of a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 4A to 4D illustrate a method for manufacturing a semiconductor device of one embodiment of the present invention. 9A and 9B are a cross-sectional view and a circuit diagram illustrating one embodiment of a semiconductor device. FIG. 14 is a cross-sectional view illustrating one embodiment of a semiconductor device.

Hereinafter, embodiments of the invention disclosed in this specification will be described in detail with reference to the drawings.
However, the invention disclosed in this specification is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed. Further, the invention disclosed in this specification is not construed as being limited to the description of the embodiments below. In addition, the ordinal numbers attached as the first and second are used for convenience and do not indicate the order of steps or the order of lamination. In addition, a specific name is not shown as a matter for specifying the invention in this specification.

(Embodiment 1)
In this embodiment, one embodiment of a semiconductor device is described with reference to FIGS. FIG. 1B is a top view of the transistor 420, and FIG. 1A is a cross-sectional view taken along line XY in FIG.

A transistor 420 illustrated in FIGS. 1A and 1B includes a base insulating layer 43 over a substrate 400.
6, a gate electrode layer 401 over the base insulating layer 436, a gate insulating layer 402 provided over the gate electrode layer 401, and an oxide semiconductor layer provided over the gate electrode layer 401 with the gate insulating layer 402 interposed therebetween 403, a drain electrode layer and a source electrode layer, and an insulating layer 406 and an insulating layer 407 provided over the oxide semiconductor layer 403. Note that in the oxide semiconductor layer 403, the portion in contact with the drain electrode layer or the source electrode layer and the vicinity thereof may have lower resistance than the other portions. Sometimes referred to as a region.

The drain electrode layer is formed by stacking a first barrier layer 405c and a first low resistance material layer 405a, and the source electrode layer is formed by stacking a second barrier layer 405d and a second low resistance material layer 405b.

Further, a wiring layer 474a and a wiring layer 474b are embedded in the base insulating layer 436, and the wiring layer 474a and the drain electrode layer (the first barrier layer 405c and the first low-resistance material layer 4).
05a) forms a capacitor 430.

The regions of the first barrier layer 405c and the second barrier layer 405d that overlap with the first low-resistance material layer 405a and the second low-resistance material layer 405b are larger in thickness than the regions that do not overlap.

As the base insulating layer 436, an oxide insulating film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, gallium oxide, silicon nitride,
It can be formed using a nitride insulating film such as silicon nitride oxide, aluminum nitride, or aluminum nitride oxide, or a mixed material thereof. In addition, these compounds can be used in the form of a single layer structure or a laminated structure of two or more layers.

Note that silicon oxynitride refers to a silicon oxynitride having a higher oxygen content than nitrogen in the composition. For example, at least oxygen is 50 atomic% or more and 70 atomic% or less, and nitrogen is 0.5 atomic% or more and 15 or less. The atomic percent or less and silicon is contained in the range of 25 atomic percent to 35 atomic percent. However, the above range is Rutherford Backscattering Method (RBS).
ackscattering spectroscopy) and hydrogen forward scattering (HFS)
: Measured using Hydrogen Forward Scattering). Further, the content ratio of the constituent elements takes a value that the total does not exceed 100 atomic%.

The material of the gate electrode layer 401 can be formed using a metal material such as molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, or scandium, or an alloy material containing any of these materials as its main component. As the gate electrode layer 401, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or a silicide film such as nickel silicide may be used. The gate electrode layer 401 may have a single-layer structure or a stacked structure.

The material of the gate electrode layer 401 is indium tin oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, oxide A conductive material such as indium zinc oxide or indium tin oxide to which silicon oxide is added can also be used. Also,
A stacked structure of the conductive material and the metal material may be employed.

Further, as the gate electrode layer 401, a metal oxide film containing nitrogen, specifically, I containing nitrogen is used.
n-Ga-Zn-O film, In-Sn-O film containing nitrogen, In-Ga-O film containing nitrogen, In-Zn-O film containing nitrogen, Sn-O film containing nitrogen Alternatively, an In—O film containing nitrogen or a metal nitride film (InN, SnN, or the like) can be used. These films have a work function of 5 eV (electron volt), preferably 5.5 eV (electron volt) or more, and when used as a gate electrode layer, the threshold voltage of the electrical characteristics of the transistor can be made positive. In other words, a so-called normally-off switching element can be realized.

As a material of the gate insulating layer 402, a silicon oxide film, a gallium oxide film, an aluminum oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxynitride film, or a silicon nitride oxide film can be used.

As materials for the gate insulating layer 402, hafnium oxide, yttrium oxide, hafnium silicate (HfSi x O y (x> 0, y> 0)), hafnium silicate added with nitrogen, hafnium aluminate (HfAl x O y (HfAl x O y ( x> 0, y> 0)), and using a high-k material such as lanthanum oxide can reduce the gate leakage current. Further, the gate insulating layer 402 may have a single-layer structure or a stacked structure.

The gate insulating layer 402 is formed using an insulating layer containing excess oxygen. Gate insulating layer 402
Contains excess oxygen, whereby oxygen can be supplied to the oxide semiconductor layer 403.

The drain electrode layer includes a first barrier layer 405c and a first low-resistance material layer 405a on the first barrier layer 405c. The first low-resistance material layer 405a is formed using aluminum or the like, and the first barrier layer 405c is formed using titanium, tungsten, molybdenum, titanium nitride, tantalum nitride, or the like. The first barrier layer 405c blocks the first low-resistance material layer 405a from being oxidized in contact with the oxide semiconductor layer 403.

The source electrode layer includes a second barrier layer 405d and a second low resistance material layer 405b on the second barrier layer 405d. The second low-resistance material layer 405b is formed using aluminum or the like, and the second barrier layer 405d is formed using titanium, tungsten, molybdenum, titanium nitride, tantalum nitride, or the like. The second barrier layer 405d blocks the second low-resistance material layer 405b from coming into contact with the oxide semiconductor layer 403 and being oxidized.

The channel length L of the transistor 420 is such that the first barrier layer 405c and the second barrier layer 405
The distance between the first barrier layer 405c and the second barrier layer 405d is determined by etching using a resist obtained by exposure using an electron beam as a mask. A fine pattern is realized by precisely exposing and developing by using an electron beam, and the distance between the first barrier layer 405c and the second barrier layer 405d, that is, the channel length L is less than 50 nm, for example, 20 nm or 30 nm. Can be. The electron beam can obtain a fine pattern as the acceleration voltage is higher. Further, the processing time per substrate can be shortened as an electron beam as a multi-beam. Note that the first barrier layer 405c and the second barrier layer 405d may be formed by etching using a photomask, except for a region where the channel length L is determined. The first barrier layer 405c and the second barrier layer 4
The film thickness of 05d is 5 nm or more and 30 nm or less, preferably 10 nm or less.

Here, a method for manufacturing the distance between the first barrier layer 405c and the second barrier layer 405d by etching using a resist using an electron beam as a mask will be described with reference to FIGS. Note that a more detailed method for manufacturing a transistor will be described in Embodiment 2.

A conductive film 404 to be the first barrier layer 405c and the second barrier layer 405d and a conductive film 405 to be the first low resistance material layer 405a and the second low resistance material layer 405b are formed over the oxide semiconductor layer 403. A film is formed (see FIG. 12A).

Subsequently, a first resist mask is formed over the conductive film 405 by a photolithography process, and selective etching is performed to perform the first low-resistance material layer 405a and the second low-resistance material layer 40.
5b is formed (see FIG. 12B).

At this time, the conductive film 404 is etched together with the conductive film 405, and the film thickness may decrease. Therefore, the etching condition is preferably an etching condition in which the etching selectivity of the conductive film 405 to the conductive film 404 is high. When the etching selection ratio of the conductive film 405 to the conductive film 404 is high, the conductive film 404 is also etched together when the conductive film 405 is etched, so that a phenomenon in which the film thickness is reduced can be reduced.

Subsequently, a resist is formed over the conductive film 404, and exposure using an electron beam is performed on the resist to form a second resist mask. The second resist mask is the transistor 4
It is formed so as to overlap with a portion other than 20 channel regions. The conductive film 404 is etched using the second resist mask to form a first barrier layer 405c and a second barrier layer 405d (see FIG. 12C). FIG. 12C shows the first barrier layer 405c shown in FIG.
The pattern shapes of the second barrier layer 405d are different.

As the resist material, for example, a siloxane resist or a polystyrene resist can be used. Note that since the width of the pattern to be formed is small, it is preferable to use a positive resist rather than a negative resist. For example, when the pattern width is 30 nm, the thickness of the resist can be 30 nm.

At this time, in the electron beam lithography apparatus capable of electron beam irradiation, for example, the acceleration voltage is preferably 5 kV to 50 kV. The current intensity is 5 × 10 −12 to 1 × 10.
It is preferably −11 A. The minimum beam diameter is preferably 2 nm or less. Moreover, it is preferable that the minimum line width of the pattern which can be produced is 8 nm or less.

Under the above conditions, for example, the pattern width can be 30 nm or less, preferably 20 nm or less, more preferably 8 nm or less.

Note that here, after forming the first low-resistance material layer 405a and the second low-resistance material layer 405b, a resist mask is formed by exposure using an electron beam, and the first barrier layer 405 is formed.
c and the method of forming the second barrier layer 405d, the first low resistance material layer,
The order in which the second low-resistance material layer, the first barrier layer, and the second barrier layer are formed is not limited to this.

After a resist mask is formed by exposure with an electron beam and the conductive film 404 is etched to expose a channel formation region, the resist mask is removed and plasma treatment is performed on the surface of the exposed oxide semiconductor layer ( N 2 O gas or O 2 gas) or cleaning (water, oxalic acid or dilute hydrofluoric acid (100-fold dilution)) is preferably performed. Exposure to oxalic acid or dilute hydrofluoric acid,
Alternatively, it is preferable to remove impurities on the surface of the oxide semiconductor layer by performing plasma treatment (such as N 2 O plasma treatment). Specifically, the copper concentration of the oxide semiconductor layer is 1 × 10 1.
8 atoms / cm 3 or less, preferably 1 × 10 17 atoms / cm 3 or less. In addition, the aluminum concentration of the oxide semiconductor layer is 1 × 10 18 atoms / cm 3 or less.
The chlorine concentration in the oxide semiconductor layer is 2 × 10 18 atoms / cm 3 or less.

Note that although a semiconductor element is provided over the substrate 400, it is omitted here for simplicity. On the substrate 400, wiring layers 474a and 474b and wiring layers 474a and 474b are provided.
A base insulating layer 436 is provided so as to cover a part of the memory structure shown in FIG. FIG. 2 shows a transistor 420 and a transistor 431 provided on the substrate 400.
An example of an equivalent circuit showing the connection to the.

2 includes a drain electrode layer (a first barrier layer 405c and a first low-resistance material layer 405a) of the transistor 420 and a wiring layer 474a as a pair of electrodes, and the base insulating layer 436 and the capacitor 430 illustrated in FIG. This is a capacitor using the gate insulating layer 402 as a dielectric. As shown in FIG. 1A and FIG. 1B showing a partial cross-sectional view thereof, the first low-resistance material layer 405a and the wiring layer 474 are used.
a overlaps to form a capacitance. Note that in the cross-sectional view shown in FIG.
The low resistance material layer 405a and the wiring layer 474a do not overlap each other, but the layout is such that the first low resistance material layer 405a and the wiring layer 474a overlap each other.

The memory configuration shown in FIG. 2 is capable of holding stored contents even when power is not supplied, and
This has the advantage that there is no limit to the number of times of writing. The details of the memory configuration shown in FIG. 2 will be described in the fourth and fifth embodiments.

An oxide semiconductor used for the oxide semiconductor layer 403 contains at least indium (In). In particular, it is preferable to contain In and zinc (Zn). In addition, it is preferable that gallium (Ga) be included in addition to the stabilizer for reducing variation in electrical characteristics of the transistor including the oxide semiconductor. Moreover, it is preferable to have tin (Sn) as a stabilizer. Moreover, it is preferable to have hafnium (Hf) as a stabilizer. Moreover, it is preferable to have aluminum (Al) as a stabilizer.
Moreover, it is preferable to have a zirconium (Zr) as a stabilizer.

In addition, as other stabilizers, lanthanoids such as lanthanum (La), cerium (
Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium ( Tm), ytterbium (Yb), or lutetium (Lu) may be used alone or in combination.

For example, as an oxide semiconductor, indium oxide, tin oxide, zinc oxide, binary metal oxides In—Zn oxide, In—Mg oxide, In—Ga oxide, ternary metal In-Ga-Zn-based oxide (also referred to as IGZO), In-Al-Zn-based oxide, In-Sn-Zn-based oxide, In-Hf-Zn-based oxide, In-La -Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide,
In-Er-Zn-based oxide, In-Tm-Zn-based oxide, In-Yb-Zn-based oxide, I
n-Lu-Zn-based oxide, In-Sn-Ga-Zn-based oxide that is an oxide of a quaternary metal,
In-Hf-Ga-Zn-based oxide, In-Al-Ga-Zn-based oxide, In-Sn-Al
A —Zn-based oxide, an In—Sn—Hf—Zn-based oxide, or an In—Hf—Al—Zn-based oxide can be used.

Note that here, for example, an In—Ga—Zn-based oxide means an oxide containing In, Ga, and Zn as its main components, and there is no limitation on the ratio of In, Ga, and Zn. In and G
Metal elements other than a and Zn may be contained.

In addition, as an oxide semiconductor, InMO 3 (ZnO) m (m> 0 and m is not an integer)
A material represented by may be used. M represents one metal element or a plurality of metal elements selected from Ga, Fe, Mn, and Co. As an oxide semiconductor, In 2 SnO 5 (
A material represented by ZnO) n (n> 0 and n is an integer) may be used.

For example, In: Ga: Zn = 1: 1: 1 (= 1/3: 1/3: 1/3), In: Ga: Z
n = 2: 2: 1 (= 2/5: 2/5: 1/5), or In: Ga: Zn = 3: 1: 2
An In—Ga—Zn-based oxide having an atomic ratio of (= 1/2: 1/6: 1/3) or an oxide in the vicinity of the composition thereof can be used. Alternatively, In: Sn: Zn = 1: 1: 1 (= 1/3:
1/3: 1/3), In: Sn: Zn = 2: 1: 3 (= 1/3: 1/6: 1/2) or In: Sn: Zn = 2: 1: 5 (= 1 / 4: 1/8: 5/8) atomic ratio In-Sn
A Zn-based oxide or an oxide in the vicinity of the composition may be used.

However, oxide semiconductors containing indium are not limited to these, and required semiconductor characteristics (
A material having an appropriate composition may be used in accordance with mobility, threshold value, variation, and the like. In order to obtain the required semiconductor characteristics, it is preferable that the carrier concentration, the impurity concentration, the defect density, the atomic ratio between the metal element and oxygen, the interatomic distance, the density, and the like are appropriate.

For example, high mobility can be obtained relatively easily with an In—Sn—Zn-based oxide. However, mobility can be increased by reducing the defect density in the bulk also in the case of using an In—Ga—Zn-based oxide.

For example, the atomic ratio of In, Ga, and Zn is In: Ga: Zn = a: b: c (a + b +
The composition of the oxide having c = 1) has an atomic ratio of In: Ga: Zn = A: B: C (A + B + C).
= 1) In the vicinity of the oxide composition, a, b, and c are (a−A) 2 + (b−B) 2 +
(C−C) 2 ≦ r 2 is satisfied, and r may be 0.05, for example. The same applies to other oxides.

The oxide semiconductor layer 403 is in a single crystal state, a polycrystalline (also referred to as polycrystal) state, an amorphous state, or the like.

Preferably, the oxide semiconductor layer is a CAAC-OS (C Axis Aligned Cr).
(ystalline Oxide Semiconductor) film.

The CAAC-OS film is not completely single crystal nor completely amorphous. The CAAC-OS film is an oxide semiconductor film with a crystal-amorphous mixed phase structure where crystal parts and amorphous parts are included in an amorphous phase. Note that the crystal part is often large enough to fit in a cube whose one side is less than 100 nm. In addition, a transmission electron microscope (TEM: Transmission Electron)
In the observation image by Microscope), the boundary between the amorphous part and the crystal part included in the CAAC-OS film is not clear. Further, a grain boundary (also referred to as a grain boundary) cannot be confirmed in the CAAC-OS film by TEM. Therefore, in the CAAC-OS film, reduction in electron mobility due to grain boundaries is suppressed.

In the crystal part included in the CAAC-OS film, the c-axis is aligned in a direction parallel to the normal vector of the formation surface of the CAAC-OS film or the normal vector of the surface, and triangular when viewed from the direction perpendicular to the ab plane. It has a shape or hexagonal atomic arrangement, and metal atoms are arranged in layers or metal atoms and oxygen atoms are arranged in layers as viewed from the direction perpendicular to the c-axis. Note that the directions of the a-axis and the b-axis may be different between different crystal parts. In the present specification, when simply described as vertical, 8
The range of 5 ° to 95 ° is also included. In addition, when simply described as parallel, −5
A range of not less than 5 ° and not more than 5 ° is also included.

Note that the distribution of crystal parts in the CAAC-OS film is not necessarily uniform. For example, CAA
In the formation process of the C-OS film, when crystal growth is performed from the surface side of the oxide semiconductor film, the ratio of crystal parts in the vicinity of the surface of the oxide semiconductor film may be higher in the vicinity of the surface. CA
When an impurity is added to the AC-OS film, the crystal part in a region to which the impurity is added becomes amorphous in some cases.

Since the c-axis of the crystal part included in the CAAC-OS film is aligned in a direction parallel to the normal vector of the formation surface of the CAAC-OS film or the normal vector of the surface, the shape of the CAAC-OS film (formation surface) Depending on the cross-sectional shape of the surface or the cross-sectional shape of the surface). Note that the c-axis direction of the crystal part is parallel to the normal vector of the surface where the CAAC-OS film is formed or the normal vector of the surface. The crystal part is formed by film formation or by performing crystallization treatment such as heat treatment after film formation.

In a transistor using a CAAC-OS film, change in electrical characteristics due to irradiation with visible light or ultraviolet light is small. Therefore, the transistor has high reliability.

Note that part of oxygen included in the oxide semiconductor film may be replaced with nitrogen.

Further, in an oxide semiconductor having a crystal part such as a CAAC-OS, defects in a bulk can be further reduced, and mobility higher than that of an oxide semiconductor in an amorphous state can be obtained by increasing surface flatness. . In order to improve the flatness of the surface, it is preferable to form an oxide semiconductor on the flat surface. Specifically, the average surface roughness (Ra) is 1 nm or less, preferably 0.
. It may be formed on the surface of 3 nm or less, more preferably 0.1 nm or less.

Ra is an arithmetic mean roughness defined in JIS B0601: 2001 (ISO4287: 1997) extended in three dimensions so that it can be applied to a curved surface. Can be expressed as “average value of absolute values of” and defined by the following formula.

Here, the designated surface is a surface to be subjected to roughness measurement, and the coordinates (x1, y1, f (x1, y
1)), (x1, y2, f (x1, y2)), (x2, y1, f (x2, y1)), (x
2, y 2, f (x 2, y 2)), a rectangular area represented by four points, the rectangular area obtained by projecting the designated surface onto the xy plane is S 0 , and the height of the reference surface (the average height of the designated surface) Is Z 0 . Ra
Can be measured with an atomic force microscope (AFM).

The thickness of the oxide semiconductor layer 403 is 1 nm to 30 nm (preferably 5 nm to 10 n).
m or less), sputtering method, MBE (Molecular Beam Epita)
xy) method, CVD method, pulsed laser deposition method, ALD (Atomic Layer Dep)
osition) method or the like can be used as appropriate. The oxide semiconductor layer 403 may be formed using a sputtering apparatus which performs film formation in a state where a plurality of substrate surfaces are set substantially perpendicular to the surface of the sputtering target.

In addition, the insulating layer 406 is preferably an insulating layer containing excess oxygen, and a SiOx film or a silicon oxynitride film in which a large amount of oxygen is contained in the film by appropriately setting film forming conditions in the PECVD method or the sputtering method. Is used. In addition, when a large amount of excess oxygen is desired to be included in the insulating layer, oxygen may be appropriately added by an ion implantation method, an ion doping method, or plasma treatment.

The insulating layer 407 includes a blocking layer (AlOx) that suppresses release of oxygen from the oxide semiconductor layer.
Etc.). The aluminum oxide film (AlOx) has a high blocking effect (blocking effect) that prevents the film from permeating both hydrogen and impurities such as moisture and oxygen. Therefore, an aluminum oxide film is a mixture of impurities such as hydrogen and moisture, which cause fluctuations, in an oxide semiconductor film during and after the manufacturing process, and an oxide of oxygen that is a main component material of the oxide semiconductor. It functions as a protective film that prevents emission from the semiconductor film.

The transistor described in this embodiment includes a first barrier layer 405c and a second barrier layer 405d.
The channel length is determined by the distance between the first barrier layer 405c and the second barrier layer 405.
The distance d is determined by etching using a resist obtained by exposure using an electron beam as a mask. By using an electron beam, precise exposure and development can be performed to realize a fine pattern, and a fine transistor having a channel length L of less than 50 nm can be manufactured.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

(Embodiment 2)
In this embodiment, a semiconductor device which is different from the semiconductor device described in Embodiment 1 and a method for manufacturing the semiconductor device will be described.

FIG. 3 shows the semiconductor device of this embodiment. 3A is a top view of a transistor included in the semiconductor device of this embodiment, and FIG. 3B is a cross-sectional view taken along a line AB (channel length direction) illustrated in FIG. 3 (C) is a cross-sectional view taken along line CD shown in FIG. 3 (A). Note that in FIG. 3A, some components illustrated in FIGS. 3B and 3C are omitted for clarity of illustration.

In the present embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals in the drawings, and detailed description thereof is omitted.

A transistor 440 illustrated in FIG. 3 includes a gate electrode layer 401 over a substrate 400, an insulating layer 432 in contact with a side surface of the gate electrode layer 401, and an insulating layer 432 embedded therein.
A gate insulating layer 402 over the gate electrode layer 401, an oxide semiconductor layer 403 over the gate insulating layer 402, a source electrode layer including a stack over the oxide semiconductor layer 403, a drain electrode layer including a stack, and an oxide Semiconductor layer 403, insulating layer 4 over source and drain electrode layers
06.

The drain electrode layer includes a first barrier layer 475a and a first low-resistance material layer 405a in contact with the first barrier layer 475a. The source electrode layer includes a second barrier layer 475b and a second low resistance material layer 405b in contact with the second barrier layer 475b. First barrier layer 475a
The second barrier layer 475b blocks the first low-resistance material layer 405a and the second low-resistance material layer 405b from being oxidized in contact with the oxide semiconductor layer 403, respectively.
Note that the first low-resistance material layer 405a and the second low-resistance material layer 405b are formed of the oxide semiconductor layer 4
Although the oxide semiconductor layer 403 is sufficiently thin, the first low-resistance material layer 405a and the second low-resistance material layer 405b can be prevented from being oxidized.

In addition, the width of the oxide semiconductor layer in the channel length direction (A-B direction in FIG. 3) is wider than the width of the gate electrode layer in the channel length direction. Accordingly, oxygen can be easily supplied to the oxide semiconductor layer from an insulating layer (eg, the insulating layer 432) below the oxide semiconductor layer 403.

The distance between the first barrier layer 475a and the second barrier layer 475b is determined using a resist obtained by exposure using an electron beam as a mask. By using an electron beam, precise exposure and development can be performed to realize a fine pattern.

The channel length of the transistor 440 includes the first barrier layer 475a and the second barrier layer 475b.
Therefore, the transistor can be a fine transistor whose channel length can be accurately determined.

4A to 7B illustrate an example of a method for manufacturing a semiconductor device including the transistor 440.

Note that FIG. 4A3 is a top view for describing the manufacturing process of the transistor.
1) is a cross-sectional view taken along AB in FIG. 4A3, and FIG. 4A2 is a cross-sectional view taken along CD in FIG. 4A3. In the following description, FIG. 4A is different from FIG.
It refers to A1) to FIG. 4 (A3). The same applies to FIGS. 4B to 7C.

First, a conductive film is formed over the substrate 400, and the conductive film is etched to form the gate electrode layer 401.
Form. For the etching of the conductive film, either dry etching or wet etching may be used.

Note that the substrate 400 includes a semiconductor element, a wiring layer, and the like, as in the semiconductor device described in Embodiment 1.
Although a base insulating layer 436 and the like covering the wiring layer are provided, they are omitted here for simplification. There is no particular limitation on a substrate that can be used as the substrate 400 as long as it has heat resistance enough to withstand heat treatment performed later. For example, a single crystal semiconductor substrate such as silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used. Alternatively, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a ceramic substrate, a quartz substrate, a sapphire substrate, or the like can be used.

Alternatively, a semiconductor device may be manufactured using a flexible substrate as the substrate 400. In order to manufacture a semiconductor device having flexibility, the transistor 440 may be directly manufactured over a flexible substrate, or the transistor 440 is manufactured over another manufacturing substrate, and then peeled and transferred to the flexible substrate. May be. Note that a separation layer is preferably provided between the formation substrate and the transistor 440 in order to separate the transistor from the formation substrate and transfer it to the flexible substrate.

Heat treatment may be performed on the substrate 400 (or the substrate 400 and a base film, wiring, or the like). For example, GRTA (Gas Rapid Thermal Ann) that performs heat treatment using a high-temperature gas
eal) Heat treatment may be performed at 650 ° C. for 1 minute to 5 minutes using an apparatus. Note that as the high-temperature gas in GRTA, an inert gas that does not react with an object to be processed by heat treatment, such as nitrogen or a rare gas such as argon, is used. Moreover, with an electric furnace, 500 ° C., 30 minutes to
Heat treatment may be performed for 1 hour.

Further, after the gate electrode layer 401 is formed, heat treatment may be performed on the substrate 400 and the gate electrode layer 401. For example, heat treatment may be performed at 650 ° C. for 1 minute to 5 minutes using a GRTA apparatus. Moreover, you may heat-process with an electric furnace for 500 degreeC and 30 minutes-1 hour.

Next, an insulating film to be the insulating layer 432 is formed so as to cover the gate electrode layer 401 and the substrate 400. As a method for forming the insulating film, a sputtering method, an MBE method, a CVD method, a pulse laser deposition method, an ALD method, or the like can be used as appropriate.

The insulating film can be manufactured using a material and a method similar to those of the base insulating layer.

Next, the insulating film is polished (for example, chemical mechanical polishing (Chemical Mechanical).
a top surface of the gate electrode layer 401 is exposed from the insulating film by performing an etching process), and an insulating layer 432 whose height matches the top surface of the gate electrode layer 401 is formed (FIG. A)). The polishing process or the etching process may be performed a plurality of times or in combination. When performing in combination, the process order is not particularly limited.

By providing the insulating layer 432, the gate insulating layer 4 provided over the gate electrode layer 401 is provided.
The covering property of 02 can be improved. Further, unevenness of a formation surface of a resist mask which is provided in a later step and is exposed by an electron beam can be flattened, and the resist mask can be formed thin.

Note that although the method for forming the insulating layer 432 after forming the gate electrode layer 401 is described in this embodiment, the method for forming the gate electrode layer 401 and the insulating layer 432 is not limited thereto. For example, after the insulating layer 432 is provided over the substrate 400, an opening is formed in the insulating layer 432 using an etching process or the like, and the opening is filled with a conductive material, whereby the gate electrode layer 401 is formed. Also good.

Next, the gate insulating layer 402 is formed over the gate electrode layer 401 and the insulating layer 432 (FIG. 4).
(See (B)).

The thickness of the gate insulating layer 402 is 1 nm to 300 nm, and CVD using a deposition gas is used.
Can be used. As the CVD method, an LPCVD method, a plasma CVD method, or the like can be used. As another method, a coating method or the like can also be used.

In this embodiment, the gate insulating layer 402 has a thickness of 200 nm by a plasma CVD method.
The silicon oxynitride film is formed. The film formation condition of the gate insulating layer 402 is, for example, SiH 4.
The a N 2 O gas flow ratio of SiH 4: N 2 O = 4sccm : 800sccm, pressure 40Pa
RF power supply (power output) 50 W, substrate temperature 350 ° C.

The gate insulating layer 402 may be subjected to dehydration or dehydrogenation treatment by heat treatment.

The temperature of the heat treatment is 300 ° C. or higher and 700 ° C. or lower, or lower than the strain point of the substrate. The heat treatment temperature is preferably higher than the deposition temperature of the gate insulating layer 402 because the effect of dehydration or dehydrogenation is high. For example, a substrate is introduced into an electric furnace which is one of heat treatment apparatuses, and the gate insulating layer 402 is heat-treated at 450 ° C. for one hour under vacuum.

Note that the heat treatment apparatus is not limited to an electric furnace, and an apparatus for heating an object to be processed by heat conduction or heat radiation from a heating element such as a resistance heating element may be used. For example, GRTA (Gas Ra
pid Thermal Anneal) device, LRTA (Lamp Rapid Th
RTA (Rapid Thermal Annea)
l) An apparatus can be used. The LRTA apparatus is an apparatus that heats an object to be processed by radiation of light (electromagnetic waves) emitted from a lamp such as a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp. The GRTA apparatus is an apparatus that performs heat treatment using a high-temperature gas. As the high-temperature gas, an inert gas that does not react with an object to be processed by heat treatment, such as nitrogen or a rare gas such as argon, is used.

For example, as the heat treatment, GRTA may be performed in which the substrate is placed in an inert gas heated to a high temperature of 650 ° C. to 700 ° C., heated for several minutes, and then the substrate is taken out of the inert gas.

The heat treatment may be performed under reduced pressure (vacuum), a nitrogen atmosphere, or a rare gas atmosphere. In addition, it is preferable that water, hydrogen, and the like be not contained in the atmosphere of nitrogen or a rare gas. Further, the purity of nitrogen or a rare gas introduced into the heat treatment apparatus is 6N (99.9999%) or more, preferably 7N (99.9999999%) or more (that is, the impurity concentration is 1 ppm or less, preferably 0.8).
1 ppm or less).

Through the heat treatment, the gate insulating layer 402 can be dehydrated or dehydrogenated, and impurities such as hydrogen or water that cause fluctuations in characteristics of the transistor are excluded.
2 can be formed.

In the heat treatment for performing dehydration or dehydrogenation, the surface of the gate insulating layer 402 interferes with the release of hydrogen, water, or the like (for example, a film that does not allow (block) hydrogen, water, or the like to be provided). The gate insulating layer 402 is preferably in a state where the surface is exposed.

Further, the heat treatment for dehydration or dehydrogenation may be performed a plurality of times or may be combined with other heat treatments.

Planarization treatment may be performed on a region where the oxide semiconductor layer 403 is in contact with the gate insulating layer 402. The planarization treatment is not particularly limited, but polishing treatment (for example, chemical mechanical polishing (CMP)
)), Dry etching treatment, plasma treatment can be used.

As the plasma treatment, for example, reverse sputtering in which an argon gas is introduced to generate plasma can be performed. Reverse sputtering is RF on the substrate side in an argon atmosphere.
In this method, a voltage is applied using a power source to form plasma in the vicinity of the substrate to modify the surface.
Note that nitrogen, helium, oxygen, or the like may be used instead of the argon atmosphere. When reverse sputtering is performed, powdery substances (also referred to as particles or dust) attached to the surface of the gate insulating layer 402 can be removed.

As the planarization treatment, the polishing treatment, the dry etching treatment, and the plasma treatment may be performed a plurality of times or in combination. In the case of performing the combination, the order of steps is not particularly limited, and may be set as appropriate in accordance with the uneven state of the surface of the gate insulating layer 402.

Next, a film-shaped oxide semiconductor film 441 is formed over the gate insulating layer 402. Note that in this embodiment, the oxide semiconductor film 441 is a film-shaped oxide semiconductor film, and the oxide semiconductor layer 403 included in the completed transistor 440 is an island-shaped oxide semiconductor layer.

Note that the oxide semiconductor film 441 is formed under conditions that include a large amount of oxygen during film formation (for example, film formation is performed by a sputtering method in an atmosphere containing 100% oxygen) and includes a large amount of oxygen ( It is preferable that the oxide semiconductor be a film in which a region where the oxygen content is excessive with respect to the stoichiometric composition in the crystalline state is included.

Note that in this embodiment, a 35-nm-thick In—Ga—Zn-based oxide film (IGZO film) is formed as the oxide semiconductor film 441 by a sputtering method using a sputtering apparatus having an AC power supply device. To do. In this embodiment mode, In: Ga: Zn = 1: 1:
An In—Ga—Zn-based oxide target having an atomic ratio of 1 (= 1/3: 1/3: 1/3) is used. The film forming conditions are oxygen and argon atmosphere (oxygen flow rate ratio 50%), pressure 0.6.
Pa, power supply power 5 kW, and substrate temperature 170 ° C. The film forming speed under these film forming conditions is 16 n
m / min.

As a sputtering gas used for forming the oxide semiconductor film 441, a high-purity gas from which impurities such as hydrogen, water, a hydroxyl group, or hydride are removed is preferably used.

The substrate is held in a film formation chamber held in a reduced pressure state. Then, a sputtering gas from which hydrogen and moisture have been removed is introduced while moisture remaining in the film formation chamber is removed, and the substrate 40 is used using the target.
An oxide semiconductor film 441 is formed over 0. In order to remove moisture remaining in the deposition chamber, it is preferable to use an adsorption-type vacuum pump such as a cryopump, an ion pump, or a titanium sublimation pump. Further, the exhaust means may be a turbo molecular pump provided with a cold trap. The film formation chamber evacuated using a cryopump is, for example,
Since a compound containing hydrogen (hydrogen atom) such as hydrogen (hydrogen atom) or water (H 2 O) (more preferably a compound containing carbon atom) is exhausted, an oxide semiconductor film is formed in the film formation chamber. Membrane 44
The concentration of impurities contained in 1 can be reduced.

In addition, the gate insulating layer 402 and the oxide semiconductor film 44 are formed without releasing the gate insulating layer 402 to the atmosphere.
It is preferable to form 1 continuously. When the gate insulating layer 402 and the oxide semiconductor film 441 are formed successively without exposing the gate insulating layer 402 to the air, adsorption of impurities such as hydrogen and moisture to the surface of the gate insulating layer 402 can be prevented. .

Next, oxygen doping treatment is performed on the oxide semiconductor film 441 and the gate insulating layer 402, so that the oxide semiconductor film 441 and the gate insulating layer 402 containing excess oxygen are formed (see FIG. 4C).
. By performing oxygen doping treatment on the gate insulating layer 402, oxygen 451 is supplied to the oxide semiconductor film 441 and the gate insulating layer 402, so that the oxide semiconductor film 441 and the gate insulating layer 40 are supplied.
2 or in the oxide semiconductor film 441 and the gate insulating layer 402 and in the vicinity of the interface.

Doped oxygen (oxygen radical, oxygen atom, oxygen molecule, ozone, oxygen ion (oxygen molecular ion), and / or oxygen cluster ion) 451 is ion implantation, ion doping, plasma immersion ion implantation, plasma Processing etc. can be used. A gas cluster ion beam may be used for the ion implantation method. The oxygen doping treatment may be performed on the entire surface at once, or may be performed by moving (scanning) using a linear ion beam or the like.

For example, doped oxygen (oxygen radicals, oxygen atoms, oxygen molecules, ozone, oxygen ions (
The oxygen molecular ions) and / or the oxygen cluster ions) 451 may be supplied by a plasma generator using a gas containing oxygen, or may be supplied by an ozone generator. More specifically, for example, an apparatus for performing an etching process on a semiconductor device,
The oxide semiconductor film 441 and the gate insulating layer 402 can be processed by generating oxygen 451 using an apparatus for performing ashing on the resist mask or the like.

A gas containing oxygen can be used for the oxygen doping treatment. As a gas containing oxygen,
Oxygen, dinitrogen monoxide, nitrogen dioxide, carbon dioxide, carbon monoxide, or the like can be used.
Further, a rare gas may be used in the oxygen doping process.

For example, when oxygen ions are implanted by an ion implantation method, the oxygen 451 may be doped with a dose of 1 × 10 13 ions / cm 2 to 5 × 10 16 ions / cm 2 .

The gate insulating layer 402 in contact with the oxide semiconductor film 441 has a large amount of oxygen serving as an oxygen supply source (
(In excess), oxygen can be supplied from the gate insulating layer 402 to the oxide semiconductor film 441.

As a method for supplying oxygen from the gate insulating layer 402 to the oxide semiconductor film 441, heat treatment is performed in a state where the oxide semiconductor film 441 and the gate insulating layer 402 are in contact with each other. Oxygen can be effectively supplied from the gate insulating layer 402 to the oxide semiconductor film 441 by heat treatment.

Note that heat treatment for supplying oxygen from the gate insulating layer 402 to the oxide semiconductor film 441 is performed.
This is preferably performed before the oxide semiconductor film 441 is processed into an island shape because oxygen contained in the gate insulating layer 402 can be prevented from being released by heat treatment.

By supplying oxygen to the oxide semiconductor film 441, oxygen vacancies in the oxide semiconductor film 441 can be filled.

Next, a conductive film 475 is formed over the oxide semiconductor film 441 (see FIG. 5A).

The conductive film 475 is a first barrier layer 475a which serves as one layer of a source electrode layer or a drain electrode layer.
And a layer to be the second barrier layer 475b.

As the conductive film 475, for example, a metal layer containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, W, or a metal nitride layer (a titanium nitride layer, molybdenum nitride) containing the above-described elements as components. Layer, a tungsten nitride layer) or the like can be used. Further, a refractory metal layer such as Ti, Mo, or W or a metal nitride layer thereof (titanium nitride layer, molybdenum nitride layer, tungsten nitride layer) on one or both of the lower side or upper side of the metal layer such as Al or Cu It is good also as a structure which laminated | stacked. Alternatively, a conductive metal oxide may be used. Examples of the conductive metal oxide include indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), and zinc oxide (ZnO
), Indium tin oxide (In 2 O 3 —SnO 2 ), indium zinc oxide (In
2 O 3 —ZnO) or a metal oxide material containing silicon oxide can be used.

Subsequently, a positive resist is formed over the conductive film 475, and exposure using an electron beam is performed on the resist to form a resist mask 453 (see FIG. 5B). The resist mask 453 is formed so as to overlap with a portion other than a channel region of the transistor 440. FIG.
As apparent from (B), the resist mask 453 has slits (or slit-like grooves). In FIG. 5B, the slit portion is completely removed, but the resist may remain in the slit portion as long as it is thinner than other portions. In general, since electron beam exposure takes time, in order to increase productivity, it is desirable that the portion irradiated with the electron beam (groove formed in the resist mask 453) has a simple shape as much as possible. , Circular, or annular. Further, the portion irradiated with the electron beam (resist mask 45
3), it is desirable that the area of the groove) is as small as possible.
% Or less, more preferably 1% or less of the entire resist mask. Also,
The area of the portion irradiated with the electron beam is preferably 0.01% or more of the entire resist mask.

Since a method for forming a resist mask by exposure using an electron beam has been described in detail in Embodiment 1, it is omitted here. Note that in Embodiment Mode 1, after forming the first low-resistance material layer 405a and the second low-resistance material layer 405b, a resist mask is formed by exposure using an electron beam, and etching is performed using the mask. First barrier layer 4
Although the method for forming 75a and the second barrier layer 475b has been described, in Embodiment 2, a method for performing etching on the first barrier layer 475a and the second barrier layer 475b will be described first.

In exposure using an electron beam, the resist mask 453 is preferably as thin as possible. In the case where the resist mask 453 is thinned, it is preferable that the unevenness of the surface to be formed be as flat as possible. In the method for manufacturing a semiconductor device of this embodiment, planarization treatment is performed on the gate electrode layer 401 and the insulating layer 432 so that unevenness due to the gate electrode layer 401 and the insulating layer 432 is reduced; thus, the resist mask is thinned. be able to. This facilitates exposure using an electron beam.

Next, the conductive film 475 is selectively etched using the resist mask 453 as a mask, so that an opening is formed in a region where a channel is formed (see FIG. 5C). Here, the region from which the conductive film 475 is removed serves as a channel formation region of the transistor 440. Since the channel length can be determined by exposure with an electron beam, a transistor with a small channel length, for example, a channel length of less than 50 nm can be manufactured.

At this time, it is preferable that the etching conditions be such that the etching selectivity of the conductive film 475 to the resist mask 453 is high. For example, in dry etching, it is preferable to use a mixed gas of Cl 2 and HBr as an etching gas and make the flow rate of HBr higher than the flow rate of Cl 2 . For example, a flow rate ratio of Cl 2 : HBr = 20: 80 is preferable.
In the case of etching by inductively coupled plasma (also called ICP etching), IC
When the P power is 500 W, the etching selectivity between the resist mask 453 and the conductive film 475 can be increased by setting the bias power to 30 W to 40 W or less.

Next, a resist mask 455 is provided over the oxide semiconductor film 441 and the conductive film 475 by a photolithography process (see FIG. 6A).

Note that the resist mask 455 may be formed by an inkjet method. When the resist mask is formed by an ink-jet method, a manufacturing cost can be reduced because a photomask is not used.

Next, the conductive film 475 and the oxide semiconductor film 441 are sequentially etched using the resist mask 455, so that the island-shaped first barrier layer 475a, the island-shaped second barrier layer 475b, and the island-shaped oxide semiconductor are used. A layer 403 is formed (see FIG. 6B).

For etching the conductive film 475, a gas containing chlorine, for example, a gas containing chlorine (Cl 2 ), boron trichloride (BCl 3 ), silicon tetrachloride (SiCl 4 ), carbon tetrachloride (CCl 4 ), or the like is used. be able to. In addition, a gas containing fluorine, for example, a gas containing carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ), nitrogen trifluoride (NF 3 ), trifluoromethane (CHF 3 ), or the like is used. it can. Alternatively, a gas obtained by adding a rare gas such as helium (He) or argon (Ar) to these gases can be used.

As an etching method, parallel plate RIE (Reactive Ion Etching) is used.
) Method or ICP (Inductively Coupled Plasma) etching method can be used. Etching conditions (such as the amount of power applied to the coil-type electrode, the amount of power applied to the substrate-side electrode, the substrate-side electrode temperature, etc.) are adjusted as appropriate so that the desired processed shape can be etched.

In this embodiment, a titanium film is used as the conductive film 475. The conductive film is etched by a dry etching method to form the first barrier layer 475a and the second barrier layer 475b.

Note that in the etching step of the conductive film 475, the oxide semiconductor film 441 is etched,
It is desirable to optimize the etching conditions so as not to break up. However, it is difficult to obtain a condition that only the conductive film is etched and the oxide semiconductor film 441 is not etched at all. When the conductive film is etched, only part of the oxide semiconductor film 441 is etched, and a groove (concave portion) is obtained. In some cases, the oxide semiconductor film may include

In the drawing, the first barrier layer 475a and the second barrier layer 475b are thinner than the first low resistance material layer 405a and the second low resistance material layer 405b, but the present invention is not limited to this. Since the first barrier layer 475a and the second barrier layer 475b are formed using a resist mask manufactured by electron beam exposure, a thinner one is preferable in the manufacturing process. Further, by increasing the thickness of the first low-resistance material layer 405a and the second low-resistance material layer 405b, the resistance of the source electrode and the drain electrode can be reduced.

Further, the distance between the first barrier layer 475a and the second barrier layer 475b is narrower than the distance between the first low-resistance material layer 405a and the second low-resistance material layer 405b. In particular, the first barrier layer 47
5a and the second barrier layer 475b have higher resistance than the first low-resistance material layer 405a and the second low-resistance material layer 405b, and thus the first low-resistance material layer 405a and the second low-resistance material layer 4
By reducing the distance 05b, the resistance between the source electrode, the oxide semiconductor layer 403, and the drain electrode can be reduced.

Next, the oxide semiconductor film 441 is etched, so that an island-shaped oxide semiconductor layer 403 is formed. Note that the etching of the oxide semiconductor film 441 may be dry etching or wet etching, or both of them may be used. For example, as an etchant used for wet etching of the oxide semiconductor film 441, a mixed solution of phosphoric acid, acetic acid, and nitric acid, or the like can be used. Moreover, ITO-07N (manufactured by Kanto Chemical Co., Inc.) may be used. ICP (Induc
Etching may be performed by dry etching using a twelve coupled plasma (inductively coupled plasma) etching method.

Next, after the resist mask 455 is removed, the oxide semiconductor layer 403 and the first barrier layer 4
A conductive film 452 is formed over the 75a and the second barrier layer 475b (see FIG. 6C).

The conductive film 452 is a conductive film that becomes the first low-resistance material layer 405a and the second low-resistance material layer 405b.

A resist mask 456 is formed over the conductive film 452 by a photolithography process (see FIG.
A), and selective etching is performed to form the first low-resistance material layer 405a and the second low-resistance material layer 405b. First low-resistance material layer 405a and second low-resistance material layer 405
After b is formed, the resist mask is removed (see FIG. 7B).

The first barrier layer 475a and the first low-resistance material layer 405a function as a source electrode layer of the transistor 440. The second barrier layer 475b and the second low-resistance material layer 405b function as the drain electrode layer of the transistor 440.

The conductive film 452 can be etched using conditions similar to those of the conductive film 475.

Through the above steps, the transistor 440 of this embodiment is manufactured.

In this embodiment, the insulating layer 406 is formed over the stacked source electrode layer, the stacked drain electrode layer, and the oxide semiconductor layer 403 (see FIG. 7C).

As the insulating layer 406, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum oxynitride film, a hafnium oxide film, a gallium oxide film, a silicon nitride film, an aluminum nitride film, a silicon nitride oxide film, A single layer or a stacked layer of an inorganic insulating film such as an aluminum nitride oxide film can be used.

Note that the insulating layer 406 may be subjected to oxygen doping treatment. By performing oxygen doping treatment on the insulating layer 406, oxygen can be supplied to the oxide semiconductor layer 403. Insulating layer 40
6 can be subjected to treatment similar to the oxygen doping treatment of the gate insulating layer 402 and the oxide semiconductor layer 403.

Note that the insulating layer 406 is provided before the conductive film 452 is provided, and the first low-resistance material layer 405 is provided.
a and the second low-resistance material layer 405b may be electrically connected to the first barrier layer 475a and the second barrier layer 475b through an opening provided in the insulating layer 406, respectively.

Further, a dense inorganic insulating film may be provided over the insulating layer 406. For example, an aluminum oxide film is formed over the insulating layer 406 by a sputtering method. When the aluminum oxide film has a high density (a film density of 3.2 g / cm 3 or more, preferably 3.6 g / cm 3 or more), stable electrical characteristics can be imparted to the transistor 440. The film density can be measured by Rutherford backscattering method or X-ray reflectometry method.

An aluminum oxide film that can be used as an insulating film provided over the transistor 440 has a high blocking effect (blocking effect) that prevents both hydrogen, moisture and other impurities, and oxygen from passing through the film.

Therefore, the aluminum oxide film has a variable factor of hydrogen during and after the manufacturing process,
It functions as a protective film for preventing impurities such as moisture from entering the oxide semiconductor layer 403 and release of oxygen, which is a main component material of the oxide semiconductor, from the oxide semiconductor layer 403.

Further, a planarization insulating film may be formed in order to reduce surface unevenness due to the transistor 440. As the planarization insulating film, an organic material such as polyimide resin, acrylic resin, or benzocyclobutene resin can be used. In addition to the above organic materials, low dielectric constant materials (low
-K material) can be used. Note that the planarization insulating film may be formed by stacking a plurality of insulating films formed using these materials.

For example, an acrylic resin film with a thickness of 1500 nm may be formed as the planarization insulating film. The acrylic resin film can be formed by coating (for example, at 250 ° C. for 1 hour in a nitrogen atmosphere) after coating by a coating method.

Heat treatment may be performed after the planarization insulating film is formed. For example, heat treatment is performed at 250 ° C. for 1 hour in a nitrogen atmosphere.

In this manner, heat treatment may be performed after the transistor 440 is formed. Moreover, you may perform heat processing in multiple times.

The transistor described in this embodiment includes the first barrier layer 475a and the second barrier layer 475b.
The channel length is determined by the distance between the first barrier layer 475a and the second barrier layer 475.
The interval b is determined by etching using a resist obtained by exposure using an electron beam as a mask. By using an electron beam, precise exposure and development can be performed to realize a fine pattern, and a fine transistor having a channel length L of less than 50 nm can be manufactured.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 3)
In this embodiment, a structure of a semiconductor device of one embodiment of the present invention, which is different from those in Embodiments 1 and 2, is described.

FIG. 13 shows the semiconductor device of this embodiment. 13A is a top view of a transistor included in the semiconductor device of this embodiment, and FIG. 13B is a cross-sectional view taken along line EF (channel length direction) in FIG. FIG. 13C is a cross-sectional view taken along line GH shown in FIG. Note that in FIG. 13A, FIG. 13B and FIG.
A part of the configuration shown in FIG.

In the present embodiment, the same parts as those in Embodiments 1 and 2 are denoted by the same reference numerals in the drawings, and detailed description thereof is omitted.

A transistor 460 illustrated in FIG. 13 includes a gate electrode layer 401 over a substrate 400, an insulating layer 432 in contact with a side surface of the gate electrode layer 401, and an insulating layer 43.
2 and the gate insulating layer 402 over the gate electrode layer 401, the oxide semiconductor layer 503 over the gate insulating layer 402, the source electrode layer including the stack over the oxide semiconductor layer 503, the drain electrode layer including the stack, and the oxidation A semiconductor layer 503, an insulating layer 406 over the source electrode layer and the drain electrode layer, and a wiring layer 585a and a wiring layer that are electrically connected to the source electrode layer and the drain electrode layer through openings provided in the insulating layer 406, respectively. 585b.

The drain electrode layer formed of a stack includes a first barrier layer 575a and a first low-resistance material layer 505a in contact with the first barrier layer 575a. The stacked source electrode layer includes a second barrier layer 575b and a second low-resistance material layer 505b in contact with the second barrier layer 575b. The first barrier layer 575a and the second barrier layer 575b block the first low resistance material layer 505a and the second low resistance material layer 505b from being in contact with the oxide semiconductor layer 503 and being oxidized, respectively. ing. The first low-resistance material layer 505a and the second low-resistance material layer 5
05b is in contact with the side surface of the oxide semiconductor layer 503, but the thickness of the oxide semiconductor layer 503 is sufficiently thin, so that the first barrier layer 575a and the second barrier layer 575b
Oxidation of the first low resistance material layer 505a and the second low resistance material layer 505b is blocked. The wiring layer 585a and the wiring layer 585b are electrically connected to the first low-resistance material layer 505a and the second low-resistance material layer 505b, respectively.

The second barrier layer 575b is formed surrounding the first barrier layer 575a. Second
The low resistance material layer 505b is formed so as to surround the first low resistance material layer 505a. The channel formation region of the transistor 460 includes a first barrier layer 575a and a second barrier layer 575.
It is an area between b.

The distance (L in the figure) between the first barrier layer 575a and the second barrier layer 575b is determined using a resist obtained by exposure using an electron beam as a mask. By using an electron beam, precise exposure and development can be performed to realize a fine pattern. Therefore, the transistor 460 can be a minute transistor that can accurately determine the channel length L. As shown in FIG. 13A, the semiconductor device of this embodiment can be applied not only when the outer periphery of the channel formation region is circular, but also when it is rectangular.

In FIG. 13, the size of the opening in which the wiring layer 585a and the wiring layer 585b are formed (
L1) in the figure is the distance between the first barrier layer 575a and the second barrier layer 575b (L in the figure).
However, in reality, L1 is several tens of times larger than L. Since the distance between the first barrier layer 575a and the second barrier layer 575b is determined using a resist obtained by exposure using an electron beam as a mask, rather than etching using a resist mask formed by a photolithography process, The channel formation region can be formed much finer.

In general, an end portion of an oxide semiconductor layer is formed in the oxide semiconductor layer forming step (etching step).
At this time, impurity elements (eg, chlorine, fluorine, boron, hydrogen, etc.) are likely to be mixed, and oxygen is easily released from the oxide semiconductor layer. Therefore, resistance of the end portion of the oxide semiconductor layer is easily reduced, and a parasitic channel is easily formed.

The parasitic channel is formed in the end portion of the oxide semiconductor layer because the source electrode layer and the drain electrode layer of the transistor electrically connected to the end portion exist. The transistor 460 described in this embodiment includes a first barrier layer 575a serving as a drain electrode layer and a first low resistance material including a second barrier layer 575b serving as a source electrode layer and a second low resistance material layer 505b. The layer 505a is surrounded, and the drain electrode layer is not electrically connected to the end portion of the oxide semiconductor layer 503. Therefore, a transistor in which a parasitic channel is hardly formed at the end portion can be obtained.

Next, a method for manufacturing the transistor 460 is described. Note that the description of the same points as in the first and second embodiments is omitted.

The transistor 460 includes a gate electrode layer 401, a gate insulating layer 402, and an insulating layer 432
The oxide semiconductor layer 503 can be formed using a material and a method similar to those described in Embodiments 1 and 2. In FIG. 13, a semiconductor element is formed over the substrate 400, but is omitted for simplification.

A conductive film to be the first barrier layer 575a and the second barrier layer 575b is provided over the oxide semiconductor layer 503. The conductive film can be formed using a material and a method similar to those in Embodiments 1 and 2.

A resist is formed over the conductive film to be the first barrier layer 575a and the second barrier layer 575b, and the resist is patterned using exposure with an electron beam to form a mask. The resist mask is formed so as to overlap with a portion other than a portion to be a channel formation region of the oxide semiconductor layer. That is, the resist mask has ring-shaped grooves. Etching is performed using the resist mask to form a first barrier layer 575a and a second barrier layer 575b.

The channel length of the transistor 460 is preferably equal everywhere in the transistor. Since the shape of the channel formation region of the transistor in this embodiment includes a curve, it is preferable to form the curve smoothly and uniformly with the electron beam exposure.

To create a smooth curve with uniform line width by electron beam exposure, for example:
There is a method of exposing a curve by rotating a stage on which a substrate is placed. Also,
Even when using a stage that moves in a straight line, the figure for electron beam drawing is divided into multiple parts, and the size and orientation are optimized, and the figure is evenly distributed so that the pattern exposure is constant. The resist mask can be patterned so that the channel lengths of the transistors are uniform by applying a multiple drawing method or the like in which the drawing is performed with a wide shift. Using the above method or the like, it is preferable that the line width of the resist mask be formed uniformly and the channel length of the transistor 460 be made uniform.

By manufacturing as described above, the semiconductor device of this embodiment can be applied to a case where the channel formation region is not only a rectangle but also a circle.

A first low resistance material layer 505a is formed on the first barrier layer 575a and the second barrier layer 575b.
Then, a conductive film to be the second low-resistance material layer 505b is formed, the conductive film is etched by photolithography, and the first low-resistance material layer 505a and the second low-resistance material layer 505b are formed. Form.

Note that etching for forming the first low-resistance material layer and the second low-resistance material layer is performed in the first low-resistance material layer 505a and the second low-resistance material layer 505b as described in Embodiment 1. After the etching is performed first, the first barrier layer 575a and the second barrier layer 575b may be etched. Further, as illustrated in Embodiment 2, after the oxide semiconductor layer 503, the first barrier layer 575a, and the second barrier layer 575b are formed, the first low-resistance material layer 50 is formed.
Etching of 5a and the second low-resistance material layer 505b may be performed.

Next, the first barrier layer 575a, the second barrier layer 575b, and the first low-resistance material layer 505a
An insulating layer 406 is formed over the second low-resistance material layer 505b. The insulating layer 406 can be formed using a method and a material similar to those in Embodiments 1 and 2.

Subsequently, the insulating layer 406 is etched to form openings that reach the first low-resistance material layer 505a and the second low-resistance material layer 505b. For the etching of the insulating layer 406, a method similar to the etching described in Embodiments 1 and 2 can be used.

Subsequently, a conductive film is formed over the opening and the insulating layer 406, and the conductive layer is etched, whereby the wiring layer 585a and the wiring layer 585b can be formed. The wiring layer 585a and the wiring layer 585b are respectively a first low resistance material layer 505a and a second low resistance material layer 505b.
And is electrically connected.

In the transistor 460 described in this embodiment, the distance between the first barrier layer 575a and the second barrier layer 575b is determined using a resist obtained by exposure with an electron beam as a mask. By using an electron beam, precise exposure and development can be performed and a fine pattern can be realized.

Further, since only one of the source electrode layer and the drain electrode layer is connected to the end portion of the oxide semiconductor layer in which the resistance is likely to be reduced, the transistor 460 is a transistor that is less likely to form a parasitic channel and has excellent electrical characteristics. Can be provided.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 4)
In this embodiment, an example of a semiconductor device (memory device) that uses the transistor described in this specification, can hold stored data even in a state where power is not supplied, and has no limit on the number of writing times is described in the drawings. Will be described.

FIG. 8 illustrates an example of a structure of a semiconductor device. FIG. 8A illustrates a cross-sectional view of the semiconductor device in FIG.
B) shows a circuit diagram of the semiconductor device. FIG. 8B shows a circuit configuration similar to that in FIG.

The semiconductor device illustrated in FIGS. 8A and 8B includes a transistor 3200 using a first semiconductor material in a lower portion and a transistor 3202 using a second semiconductor material in an upper portion. . The transistor 3202 is an example to which the structure of the transistor 420 described in Embodiment 1 is applied.

Here, it is desirable that the first semiconductor material and the second semiconductor material have different band gaps. For example, the first semiconductor material is a semiconductor material other than an oxide semiconductor (such as silicon).
And the second semiconductor material can be an oxide semiconductor. A transistor including a material other than an oxide semiconductor can easily operate at high speed. On the other hand, a transistor including an oxide semiconductor can hold charge for a long time due to its characteristics.

Note that although all the above transistors are described as n-channel transistors, it goes without saying that p-channel transistors can be used. In addition to the use of a transistor such as that described in Embodiment 1 or 2 that uses an oxide semiconductor in order to retain information, a specific example of a semiconductor device such as a material used in the semiconductor device or a structure of the semiconductor device The specific configuration need not be limited to that shown here.

A transistor 3200 in FIG. 8A includes a channel formation region provided in a substrate 3000 containing a semiconductor material (eg, silicon), an impurity region provided so as to sandwich the channel formation region, and a metal in contact with the impurity region. An intermetallic compound region; a gate insulating film provided over the channel formation region; and a gate electrode layer provided over the gate insulating film. In addition,
Although the source electrode layer and the drain electrode layer may not be explicitly shown in the drawing, such a state is sometimes referred to as a transistor for convenience. In this case, in order to describe a connection relation of the transistors, the source electrode layer and the drain electrode layer may be expressed including the source region and the drain region. That is, in this specification, the term “source electrode layer” can include a source region.

An element isolation insulating layer 3106 is provided over the substrate 3000 so as to surround the transistor 3200, and an insulating layer 3220 is provided so as to cover the transistor 3200.

The transistor 3200 using a single crystal semiconductor substrate can operate at high speed. For this reason,
By using the transistor as a reading transistor, information can be read at high speed. As a treatment before the formation of the transistor 3202 and the capacitor 3204, CMP treatment is performed on the insulating layer 3220 covering the transistor 3200, so that the insulating layer 322 is formed.
At the same time that 0 is planarized, the upper surface of the gate electrode layer of the transistor 3200 is exposed.

A transistor 3202 illustrated in FIG. 8A is a bottom-gate transistor using an oxide semiconductor for a channel formation region. Here, it is preferable that the oxide semiconductor layer included in the transistor 3202 be highly purified. With the use of a highly purified oxide semiconductor, the transistor 3202 with extremely excellent off characteristics can be obtained.

Since the off-state current of the transistor 3202 is small, stored data can be held for a long time by using the transistor 3202. In other words, since it is possible to obtain a semiconductor memory device that does not require a refresh operation or has a very low frequency of the refresh operation, power consumption can be sufficiently reduced.

One of a source electrode layer and a drain electrode layer of the transistor 3202 is electrically connected to the electrode 3208 through an opening provided in the gate insulating layer, and electrically connected to the gate electrode layer of the transistor 3200 through the electrode 3208. It is connected. The electrode 3208 can be manufactured through a process similar to that of the gate electrode layer of the transistor 3202.

An insulating layer 3222 is provided as a single layer or a stacked layer over the transistor 3202.
A conductive layer 3210a is provided in a region overlapping with one of the source electrode layer and the drain electrode layer of the transistor 3202 with the insulating layer 3222 interposed therebetween.
The capacitor 3204 is formed by one of the two source electrode layers or the drain electrode layer, the insulating layer 3222, and the conductive layer 3210a. That is, one of the source electrode layer and the drain electrode layer of the transistor 3202 functions as one electrode of the capacitor 3204, and the conductive layer 3
210 a functions as the other electrode of the capacitor 3204. Note that in the case where a capacitor is not necessary, the capacitor 3204 can be omitted. In addition, the capacitor 3204 includes
It may be provided above the transistor 3202 separately.

An insulating layer 3224 is provided over the capacitor 3204. A wiring 3216 for connecting the transistor 3202 and another transistor is provided over the insulating layer 3224. The wiring 3216 includes an electrode 3214 provided in an opening formed in the insulating layer 3224,
Through the conductive layer 3210b provided in the same layer as the conductive layer 3210a and the electrode 3212 provided in the opening formed in the insulating layer 3222, the other of the source electrode layer and the drain electrode layer of the transistor 3202 is electrically connected. Connected.

8A and 8B, the transistor 3200 and the transistor 3202 are provided so as to overlap at least partly, and are included in the transistor 3202 and the source region or the drain region of the transistor 3200. It is preferable that a portion of the oxide semiconductor layer overlap with each other. In addition, the transistor 3202 and the capacitor 32
04 is provided so as to overlap with at least part of the transistor 3200. For example, the conductive layer 3210a of the capacitor 3204 is provided so as to overlap with at least part of the gate electrode layer of the transistor 3200. By adopting such a planar layout, the occupation area of the semiconductor device can be reduced, and thus high integration can be achieved.

Next, FIG. 8B illustrates an example of a circuit configuration corresponding to FIG.

In FIG. 8B, the first wiring (1st Line) and the source electrode layer of the transistor 3200 are electrically connected, and the second wiring (2nd Line) and the transistor 320 are connected.
The zero drain electrode layer is electrically connected. In addition, the third wiring (3rd Lin
e) and one of a source electrode layer and a drain electrode layer of the transistor 3202 are electrically connected, and a fourth wiring (4th Line) and the gate electrode layer of the transistor 3202 are electrically connected. . One of the gate electrode layer of the transistor 3200 and the source or drain electrode layer of the transistor 3202 is electrically connected to one of the electrodes of the capacitor 3204, and the fifth wiring (5th Line) and the capacitor The other electrode of 3204 is electrically connected.

In the semiconductor device illustrated in FIG. 8B, information can be written, held, and read as follows by utilizing the feature that the potential of the gate electrode layer of the transistor 3200 can be held.

Information writing and holding will be described. First, the potential of the fourth wiring is set to a potential at which the transistor 3202 is turned on, so that the transistor 3202 is turned on. Accordingly, the potential of the third wiring is changed between the gate electrode layer of the transistor 3200 and the capacitor 32.
04. That is, predetermined charge is supplied to the gate electrode layer of the transistor 3200 (writing). Here, electric charges giving two different potential levels (hereinafter referred to as Low)
One of level charge and high level charge) is given. after that,
When the potential of the fourth wiring is set to a potential at which the transistor 3202 is turned off and the transistor 3202 is turned off, the charge given to the gate electrode layer of the transistor 3200 is held (held).

Since the off-state current of the transistor 3202 is extremely small, the charge of the gate electrode layer of the transistor 3200 is held for a long time.

Next, reading of information will be described. When an appropriate potential (readout potential) is applied to the fifth wiring in a state where a predetermined potential (constant potential) is applied to the first wiring, according to the amount of charge held in the gate electrode layer of the transistor 3200, The second wiring takes different potentials. In general, when the transistor 3200 is an n-channel transistor, a high electrode is formed on the gate electrode layer of the transistor 3200.
The apparent threshold value V th — H when the h level charge is applied is determined by the transistor 32
Apparent threshold V th when low level charge is applied to the gate electrode layer of 00
This is because it becomes lower than _L . Here, the apparent threshold voltage is the transistor 320.
The potential of the fifth wiring necessary for setting 0 to the “on state” is assumed. Therefore,
By setting the potential of the fifth wiring to a potential V 0 between V th_H and V th_L , the charge given to the gate electrode layer of the transistor 3200 can be determined. For example, in writing, when a high-level charge is applied, the potential of the fifth wiring is V 0 (> V th —
H 3 ), the transistor 3200 is turned on. In the case where the low-level charge is supplied , the transistor 3200 remains in the “off state” even when the potential of the fifth wiring is V 0 (<V th_L ). Therefore, the held information can be read by looking at the potential of the second wiring.

Note that in the case of using memory cells arranged in an array, it is necessary to read only information of a desired memory cell. In the case where information is not read out in this manner, a potential at which the transistor 3200 is turned “off” regardless of the state of the gate electrode layer, that is, V th —
A potential lower than H may be supplied to the fifth wiring. Alternatively , a potential that turns on the transistor 3200 regardless of the state of the gate electrode layer, that is, a potential higher than V th_L may be supplied to the fifth wiring.

In the semiconductor device described in this embodiment, stored data can be held for an extremely long time by using a transistor with an extremely small off-state current that uses an oxide semiconductor for a channel formation region. That is, the refresh operation is not necessary or the frequency of the refresh operation can be extremely low, so that power consumption can be sufficiently reduced. In addition, stored data can be held for a long time even when power is not supplied (note that a potential is preferably fixed).

In addition, in the semiconductor device described in this embodiment, high voltage is not needed for writing data and there is no problem of deterioration of elements. For example, there is no need to inject electrons into the floating gate or withdraw electrons from the floating gate unlike conventional nonvolatile memories.
There is no problem of deterioration of the gate insulating film. That is, in the semiconductor device according to the disclosed invention, the number of rewritable times that is a problem in the conventional nonvolatile memory is not limited, and the reliability is dramatically improved. Further, since data is written depending on the on / off state of the transistor, high-speed operation can be easily realized.

As described above, a semiconductor device which is miniaturized and highly integrated and has high electrical characteristics, and a method for manufacturing the semiconductor device can be provided.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

(Embodiment 5)
In this embodiment, one embodiment of a structure of a memory device, which is different from that in Embodiment 4, will be described.

FIG. 9 is a perspective view of the storage device. The memory device illustrated in FIG. 9 includes a memory cell array (memory cell array 3400a to memory cell array 3) including a plurality of memory cells as memory circuits in an upper portion.
400n (n is an integer of 2 or more)), and a logic circuit 3004 necessary for operating the memory cell array is provided below.

FIG. 10 shows a partially enlarged view of the storage device shown in FIG. In FIG. 10, the logic circuit 3004,
A memory cell array 3400a and a memory cell array 3400b are illustrated, and among the plurality of memory cells included in the memory cell array 3400a or the memory cell array 3400b, the memory cell 3170a and the memory cell 3170b are shown as representatives. Memory cell 3170a
As the memory cell 3170b, for example, FIG.
B) or a circuit configuration similar to that shown in FIG.

Note that a transistor 3171a included in the memory cell 3170a is shown as a representative. A transistor 3171b included in the memory cell 3170b is shown as a representative. Transistor 3171a
The transistor 3171b includes a channel formation region in the oxide semiconductor layer. The structure of the transistor in which the channel formation region is formed in the oxide semiconductor layer is similar to the structure described in the other embodiments, and thus the description is omitted.

The electrode 3501a formed in the same layer as the gate electrode layer of the transistor 3171a is formed of the electrode 3
The electrode 3003a is electrically connected by 502a. Transistor 3171b
The gate electrode layer formed in the same layer is electrically connected to the electrode 3003c by an electrode 3502c.

The logic circuit 3004 includes a transistor 3001 using a semiconductor material other than an oxide semiconductor as a channel formation region. In the transistor 3001, an element isolation insulating layer 3106 is provided over a substrate 3000 containing a semiconductor material (eg, silicon), and the element isolation insulating layer 31 is provided.
A transistor can be obtained by forming a region to be a channel formation region in a region surrounded by 06. Note that the transistor 3001 may be a transistor in which a channel formation region is formed in a semiconductor film such as a silicon film formed over an insulating surface or a silicon film of an SOI substrate. A known structure can be used as the structure of the transistor 3001, and thus the description is omitted.

A wiring 3100a and a wiring 3100b are formed between the layer in which the transistor 3171a is formed and the layer in which the transistor 3001 is formed. An insulating film 3140a is provided between the wiring 3100a and the layer where the transistor 3001 is formed, and the wiring 3100a
An insulating film 3141a is provided between the wiring 3100b and the wiring 3100b, and an insulating film 3142a is provided between the wiring 3100b and the layer where the transistor 3171a is formed.

Similarly, a wiring 3100c and a wiring 3100d are formed between the layer in which the transistor 3171b is formed and the layer in which the transistor 3171a is formed. Wiring 3100c
Between the wiring 3100c and the wiring 3100d, an insulating film 3141b is provided between the wiring 3100c and the wiring 3100d.
An insulating film 3142b is provided between d and the layer where the transistor 3171b is formed.

Insulating film 3140a, insulating film 3141a, insulating film 3142a, insulating film 3140b, insulating film 3
141b and the insulating film 3142b function as an interlayer insulating film, and the surface thereof can be planarized.

With the wiring 3100a, the wiring 3100b, the wiring 3100c, and the wiring 3100d, an electrical connection between the memory cells, an electrical connection between the logic circuit 3004 and the memory cell, or the like can be performed.

The electrode 3303 included in the logic circuit 3004 can be electrically connected to a circuit provided in the upper portion.

For example, as illustrated in FIG. 10, the electrode 3303 can be electrically connected to the wiring 3100 a by the electrode 3505. The wiring 3100a can be electrically connected to the electrode 3501b formed in the same layer as the gate electrode layer of the transistor 3171a by the electrode 3503a. In this manner, the wiring 3100a and the electrode 3303 can be electrically connected to the source or the drain of the transistor 3171a. The electrode 3501b includes the electrode 3002b formed by the source or drain of the transistor 3171a and the electrode 3502b.
3b can be electrically connected. The electrode 3003b can be electrically connected to the wiring 3100c through the electrode 3503b.

In FIG. 10, electrical connection between the electrode 3303 and the transistor 3171 a is performed using the wiring 3100 a.
Although an example is shown through FIG. 1, the present invention is not limited to this. Electrode 3303 and transistor 317
The electrical connection with 1a may be performed via the wiring 3100b, or may be performed via both the wiring 3100a and the wiring 3100b. Alternatively, the wiring 3100a is also the wiring 3100b.
Alternatively, other electrodes may be used.

In FIG. 10, a wiring layer in which the wiring 3100a is formed and a wiring layer in which the wiring 3100b is formed between the layer in which the transistor 3171a is formed and the layer in which the transistor 3001 is formed. Although a configuration in which one wiring layer is provided is shown, the present invention is not limited to this. Between the layer in which the transistor 3171a is formed and the layer in which the transistor 3001 is formed,
One wiring layer may be provided, or three or more wiring layers may be provided.

In FIG. 10, the layer in which the transistor 3171b is formed and the transistor 3171a
Although a structure in which two wiring layers, a wiring layer in which the wiring 3100c is formed and a wiring layer in which the wiring 3100d is formed, is provided between the layers in which the wiring 3100d is formed is not limited thereto. One wiring layer may be provided between the layer in which the transistor 3171b is formed and the layer in which the transistor 3171a is formed, or three or more wiring layers may be provided.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

(Embodiment 6)
The semiconductor device disclosed in this specification can be applied to a variety of electronic devices. Electronic devices include television devices (also referred to as televisions or television receivers), computer monitors, digital cameras, digital video cameras, digital photo frames,
Examples include a mobile phone, a portable game machine, a portable information terminal, a sound reproducing device, a game machine (such as a pachinko machine or a slot machine), and a game housing.

FIG. 11 shows a specific example of an electronic device. 11A and 11B illustrate a tablet terminal that can be folded. FIG. 11A illustrates an open state, in which the tablet terminal includes a housing 9630, a display portion 9631a, a display portion 9631b, and a display mode switch 9034.
, A power switch 9035, a power saving mode switching switch 9036, a fastener 9033, and an operation switch 9038.

The semiconductor device described in any of Embodiments 1 and 2 can be used for the display portion 9631a and the display portion 9631b, so that a highly reliable tablet terminal can be provided. Further, the memory device described in Embodiment 4 or 5 may be applied to the semiconductor device in this embodiment.

Part of the display portion 9631 a can be a touch panel region 9632 a and data can be input when a displayed operation key 9638 is touched. The display portion 963
In FIG. 1a, as an example, a configuration in which half the area has a display-only function and a configuration in which the other half has a touch panel function is shown, but the configuration is not limited thereto. Display unit 96
The entire surface of 31a can be displayed as a keyboard button and used as a touch panel, and the display portion 9631b can be used as a display screen.

Further, in the display portion 9631b, as in the display portion 9631a, part of the display portion 9631b can be a touch panel region 9632b. Further, a keyboard button can be displayed on the display portion 9631b by touching a position where the keyboard display switching button 9539 on the touch panel is displayed with a finger or a stylus.

Touch input can be performed simultaneously on the touch panel region 9632a and the touch panel region 9632b.

A display mode switching switch 9034 can switch the display direction such as vertical display or horizontal display, and can select switching between monochrome display and color display. The power saving mode change-over switch 9036 can optimize the display luminance in accordance with the amount of external light during use detected by an optical sensor built in the tablet terminal. The tablet terminal may include not only an optical sensor but also other detection devices such as a gyroscope, an acceleration sensor, and other sensors that detect inclination.

FIG. 11A illustrates an example in which the display areas of the display portion 9631b and the display portion 9631a are the same; however, there is no particular limitation, and one size may differ from the other size, and the display quality may also be different. May be different. For example, one display panel may be capable of displaying images with higher definition than the other.

FIG. 11B illustrates a closed state, in which a tablet terminal includes a housing 9630, a solar cell 96
33, a charge / discharge control circuit 9634, a battery 9635, and a DCDC converter 9636. Note that in FIG. 11B, a battery 9635 is illustrated as an example of the charge / discharge control circuit 9634.
, A configuration including a DCDC converter 9636 is shown.

Note that since the tablet terminal can be folded in two, the housing 9630 can be closed when not in use. Accordingly, since the display portion 9631a and the display portion 9631b can be protected, a tablet terminal with excellent durability and high reliability can be provided from the viewpoint of long-term use.

In addition, the tablet type terminal shown in FIGS. 11A and 11B has a function for displaying various information (still images, moving images, text images, etc.), a calendar, a date or a time. A function for displaying on the display unit, a touch input function for performing touch input operation or editing of information displayed on the display unit, a function for controlling processing by various software (programs), and the like can be provided.

The solar cell 9633 mounted on the surface of the tablet terminal allows power to be supplied to the touch panel,
It can be supplied to a display unit, a video signal processing unit, or the like. Note that the solar battery 9633 includes:
The housing 9630 can be provided on one or both surfaces of the housing 9630 and the battery 9635 can be charged efficiently. Note that as the battery 9635, when a lithium ion battery is used, there is an advantage that reduction in size can be achieved.

Further, the structure and operation of the charge / discharge control circuit 9634 illustrated in FIG.
A block diagram is shown in FIG. FIG. 11C illustrates a solar cell 9633, a battery 9
635, DCDC converter 9636, converter 9637, switches SW1 to SW3
, A display portion 9631, a battery 9635, a DCDC converter 963
6, the converter 9637, and the switches SW1 to SW3 are portions corresponding to the charge / discharge control circuit 9634 illustrated in FIG.

First, an example of operation in the case where power is generated by the solar battery 9633 using external light is described.
DCD is used so that the power generated by the solar cell becomes a voltage for charging the battery 9635.
The C converter 9636 performs step-up or step-down. When power from the solar battery 9633 is used for the operation of the display portion 9631, the switch SW1 is turned on, and the converter 9
In 637, the voltage required for the display portion 9631 is increased or decreased. In the case where display on the display portion 9631 is not performed, the battery 9635 may be charged by turning off SW1 and turning on SW2.

Note that the solar cell 9633 is described as an example of the power generation unit, but is not particularly limited, and the battery 9635 is charged by another power generation unit such as a piezoelectric element (piezo element) or a thermoelectric conversion element (Peltier element). There may be. For example, a non-contact power transmission module that wirelessly (contactlessly) transmits and receives power for charging and other charging means may be combined.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

(Embodiment 7)
In this embodiment, an example in which the top view is partly different from that in Embodiment 1 is shown. Note that the cross-sectional structure is the same as that in Embodiment 1, and thus detailed description thereof is omitted here.

FIG. 14 is a top view which is partly different from FIG. Note that a cross-sectional view taken along line X-Y in FIG. 14 is the same as FIG. 1A and will be described using the same reference numerals.

The channel length L of the transistor 420 is such that the first barrier layer 405c and the second barrier layer 405
The minimum distance between the first barrier layer 405c and the second barrier layer 405d is determined by etching using a resist obtained by exposure using an electron beam as a mask. A fine pattern is realized by performing exposure and development precisely by using an electron beam, and the shortest distance between the first barrier layer 405c and the second barrier layer 405d, that is, the channel length L is less than 50 nm, for example, 20 nm It can be 30 nm. That is,
Forming openings having different widths in the masks of the first barrier layer 405c and the second barrier layer 405d;
For example, it is possible to realize a transistor in which an opening having a portion with a width of 20 nm and a portion with a width of 30 nm is provided, the channel length L is 20 nm, and the wider interval L ′ is 30 nm.
The electron beam can obtain a fine pattern as the acceleration voltage is higher. Further, the processing time per substrate can be shortened as an electron beam as a multi-beam. Note that the first barrier layer 405c and the second barrier layer 405d can be formed by etching using a photomask, except for a region where the channel length L is determined. The first barrier layer 4
The thickness of 05c and the second barrier layer 405d is 5 nm or more and 30 nm or less, preferably 10 n
m or less.

Here, a method of using an electron beam for resist exposure for determining the distance between the first barrier layer 405c and the second barrier layer 405d will be described.

First, a gate electrode layer 401 is formed by a first photolithography step, and a gate insulating layer 402 and an oxide semiconductor film are formed. Then, a resist mask is provided over the oxide semiconductor film by a second photolithography step, and etching is performed, so that the oxide semiconductor layer 403 is formed. Then, a first conductive film to be the first barrier layer 405c and the second barrier layer 405d is formed over the island-shaped oxide semiconductor layer 403, and the first low resistance is formed over the first conductive film. Material layer 40
A second conductive film to be 5a and the second low-resistance material layer 405b is formed.

Next, a resist mask is provided over the second conductive film by a third photolithography step, the second conductive film is etched, and the first conductive film is left as an etching stopper to be a first low-resistance material. A layer 405a and a second low resistance material layer 405b are formed.

Next, covering the side surfaces of the first low-resistance material layer 405a and the second low-resistance material layer 405b,
A resist mask is formed by a fourth photolithography process, and etching is performed to perform the first
A part of the conductive film is removed. At this time, the first conductive film which overlaps with the oxide semiconductor layer 403 is left.

Next, after removing the resist mask, a resist is formed over the first conductive film so as to cover the side surfaces of the first low-resistance material layer 405a and the second low-resistance material layer 405b. Exposure using a beam is performed to form a resist mask. The resist mask is formed so as to overlap with a portion other than a channel formation region of the transistor 420.

As the resist material, for example, a siloxane resist or a polystyrene resist can be used. Note that since the width of the pattern to be formed is small, it is preferable to use a positive resist rather than a negative resist. For example, when the pattern width is 30 nm, the thickness of the resist can be 30 nm.

At this time, in the electron beam lithography apparatus capable of electron beam irradiation, for example, the acceleration voltage is preferably 5 kV to 50 kV. The current intensity is 5 × 10 −12 to 1 × 10.
It is preferably −11 A. The minimum beam diameter is preferably 2 nm or less. Moreover, it is preferable that the minimum line width of the pattern which can be produced is 8 nm or less.

Under the above conditions, for example, the pattern width can be 30 nm or less, preferably 20 nm or less, more preferably 8 nm or less.

After the first low-resistance material layer 405a and the second low-resistance material layer 405b are formed, a resist mask is formed by exposure using an electron beam to cover the channel formation region of the oxide semiconductor layer 403. The method for forming the first barrier layer 405c and the second barrier layer 405d by etching the conductive film minimizes exposure of the channel formation region of the oxide semiconductor layer 403 to a plurality of treatments. This has the advantage that it can be suppressed and contamination of impurities can be prevented.

Note that here, after forming the first low-resistance material layer 405a and the second low-resistance material layer 405b, a resist mask is formed by exposure using an electron beam, and the first barrier layer 405 is formed.
c and the method of forming the second barrier layer 405d, the first low resistance material layer,
The order in which the second low-resistance material layer, the first barrier layer, and the second barrier layer are formed is not limited to this. For example, a resist mask is first formed by exposure using an electron beam, the first barrier layer 405c and the second barrier layer 405d are formed, and then the first low-resistance material layer 405 is formed.
Etching for forming a and the second low-resistance material layer 405b may be performed.

After the resist mask is formed by exposure using an electron beam and the first conductive film is etched to expose the channel formation region, the resist mask is removed and plasma is formed on the exposed surface of the oxide semiconductor layer. It is preferable to perform treatment (N 2 O gas or O 2 gas) or cleaning (water, oxalic acid or dilute hydrofluoric acid (100-fold dilution)). Exposure to oxalic acid or dilute hydrofluoric acid,
Alternatively, it is preferable to remove impurities on the surface of the oxide semiconductor layer by performing plasma treatment (such as N 2 O plasma treatment). Specifically, the copper concentration of the oxide semiconductor layer is 1 × 10 1.
8 atoms / cm 3 or less, preferably 1 × 10 17 atoms / cm 3 or less. In addition, the aluminum concentration of the oxide semiconductor layer is 1 × 10 18 atoms / cm 3 or less.
The chlorine concentration in the oxide semiconductor layer is 2 × 10 18 atoms / cm 3 or less.

The transistor described in this embodiment includes a first barrier layer 405c and a second barrier layer 405d.
The channel length L is determined by the shortest distance, and the shortest distance between the first barrier layer 405c and the second barrier layer 405d is determined by etching using a resist obtained by exposure using an electron beam as a mask. By using an electron beam, precise exposure and development can be performed to realize a fine pattern, and a fine transistor having a channel length L of less than 50 nm can be manufactured.

In addition, the parasitic channel leakage is reduced by the first barrier layer 405c and the second barrier layer 405d.
This electron beam exposure can be set as appropriate, and the channel width W of the channel formation region can be reduced. Specifically, as shown in FIG. 14, a channel formation region having a channel length L of less than 50 nm and a region having an interval L ′ wider than the channel length L are provided between the source electrode layer and the drain electrode layer. The layout is provided. In addition, leakage between the source electrode layer and the drain electrode layer is reduced by moving the formation position of the channel formation region away from the end face of the oxide semiconductor layer.

In addition, the top shape of the oxide semiconductor layer illustrated in FIG. 14 is a rectangle, and the end surface of the oxide semiconductor layer is covered with the first barrier layer 405c and the second barrier layer 405d as much as possible. That is, of the four sides of the rectangle, two sides are the first barrier layer 405c and the second barrier layer 40.
It is the structure covered with 5d. With such a structure, entry of impurities from the end face of the oxide semiconductor layer is blocked.

The top shape of the oxide semiconductor layer illustrated in FIG. 14 is not limited to a rectangle, and may be a polygon, a circle, an ellipse, or the like.

(Embodiment 8)
In this embodiment, a semiconductor device which is different from the semiconductor device described in Embodiment 2 and a method for manufacturing the semiconductor device will be described.

FIG. 15 shows the semiconductor device of this embodiment. 15A is a top view of a transistor included in the semiconductor device of this embodiment, and FIG. 15B is a cross-sectional view taken along a line AB (channel length direction) illustrated in FIG. 15 (C) is a cross-sectional view taken along the line CD shown in FIG. 15 (A). In FIG. 15A, FIGS. 15B and 15C are shown for the sake of clarity.
A part of the configuration shown in FIG.

In the present embodiment, the same parts as those in Embodiments 1 and 2 are denoted by the same reference numerals in the drawings, and detailed description thereof is omitted.

A transistor 440 illustrated in FIG. 15 includes a gate electrode layer 401 over a substrate 400, an insulating layer 432 in contact with a side surface of the gate electrode layer 401, and an insulating layer 43.
2 and the gate insulating layer 402 over the gate electrode layer 401, the oxide semiconductor layer 403 over the gate insulating layer 402, the source electrode layer including the stack over the oxide semiconductor layer 403, the drain electrode layer including the stack, and the oxidation And an insulating layer 406 over the source electrode layer and the drain electrode layer.

The drain electrode layer formed of a stack includes a first barrier layer 475a and a first low-resistance material layer 405a in contact with the first barrier layer 475a. The stacked source electrode layer includes a second barrier layer 475b and a second low-resistance material layer 405b in contact with the second barrier layer 475b. The first barrier layer 475a and the second barrier layer 475b block the first low-resistance material layer 405a and the second low-resistance material layer 405b from being oxidized in contact with the oxide semiconductor layer 403, respectively. ing. The first low resistance material layer 405a and the second low resistance material layer 4
05b is in contact with the side surface of the oxide semiconductor layer 403, but the thickness of the oxide semiconductor layer 403 is sufficiently thin, so that the first barrier layer 475a and the second barrier layer 475b
Oxidation of the first low resistance material layer 405a and the second low resistance material layer 405b is blocked.

In addition, the width of the oxide semiconductor layer 403 in the channel length direction (A-B direction in FIG. 15) is wider than the width of the gate electrode layer in the channel length direction. Accordingly, for example, oxygen can be easily supplied to the oxide semiconductor layer from an insulating layer below the oxide semiconductor layer 403.

The distance between the first barrier layer 475a and the second barrier layer 475b is determined using a resist obtained by exposure using an electron beam as a mask. By using an electron beam, precise exposure and development can be performed to realize a fine pattern.

The channel length L of the transistor 440 includes the first barrier layer 475a and the second barrier layer 475.
Since it is the shortest interval of b, it can be a fine transistor capable of accurately determining the channel length.

16 and 17 illustrate an example of a method for manufacturing a semiconductor device including the transistor 440. Note that FIG. 16A3 is a top view for illustrating the manufacturing process of the transistor.
A1) is a cross-sectional view taken along AB in FIG. 16A3, and FIG. 16A2 is FIG.
It is sectional drawing in CD shown to A3). FIG. 17A3 is a top view for illustrating a manufacturing process of a transistor, FIG. 17A1 is a cross-sectional view taken along a line AB in FIG. 17A3, and FIG. FIG. 18 is a cross-sectional view taken along CD in FIG. 17 (A3). Note that in the following description, FIG. 17A refers to FIGS. 17A1 to 17A3. The same applies to FIGS. 17B and 17C.

Note that in the manufacturing process of the transistor 440, FIGS. 4, 5, 6A, and 6B.
See also However, since FIG. 6B is the same as that in Embodiment 2, detailed description thereof is omitted here.

After obtaining the state of FIG. 6B according to Embodiment Mode 2, the first step is performed by a photolithography process.
A resist mask 457 is formed over the first barrier layer 475a and the second barrier layer 475b, and a part of the first barrier layer 475a and a part of the second barrier layer 475b are removed, whereby the edge of the oxide semiconductor layer 403 is removed. The part is exposed (see FIG. 16).

Next, after the resist mask 457 is removed, the oxide semiconductor layer 403 and the first barrier layer 4
A conductive film 452 is formed over the 75a and the second barrier layer 475b.

The conductive film 452 is a conductive film that becomes the first low-resistance material layer 405a and the second low-resistance material layer 405b.

A resist mask 456 is formed over the conductive film 452 by a photolithography process (FIG. 17).
(See (A)), selective etching is performed to form a first low-resistance material layer 405a and a second low-resistance material layer 405b. First low resistance material layer 405a and second low resistance material layer 40
After forming 5b, the resist mask is removed (see FIG. 17B).

The first barrier layer 475a and the first low-resistance material layer 405a function as a drain electrode layer of the transistor 440. The second barrier layer 475b and the second low-resistance material layer 405b function as a source electrode layer of the transistor 440. Since the first barrier layer 475a and the second barrier layer 475b are formed using a resist mask manufactured by electron beam exposure, a thinner film thickness is preferable in the manufacturing process.

Further, by increasing the thickness of the first low-resistance material layer 405a and the second low-resistance material layer 405b, the resistance of the source electrode and the drain electrode can be reduced. Note that FIG.
As shown in FIG. 3, in this embodiment, the first barrier layer 475a and the second barrier layer 475b
Is thinner than the first low resistance material layer 405a and the second low resistance material layer 405b.

The conductive film 452 can be etched using conditions similar to those of the conductive film 475.

Through the above steps, the transistor 440 of this embodiment is manufactured. In the transistor 440, the distance between the first barrier layer 475a and the second barrier layer 475b is narrower than the distance between the first low-resistance material layer 405a and the second low-resistance material layer 405b. In particular, since the first barrier layer 475a and the second barrier layer 475b have higher resistance than the first low-resistance material layer 405a and the second low-resistance material layer 405b, the first low-resistance material layer 405a and the second low-resistance material layer 405a By reducing the interval between the low-resistance material layers 405b, the source electrode layer and the oxide semiconductor layer 403
And the resistance between the drain electrode layers can be reduced.

In this embodiment, the insulating layer 406 is formed over the stacked source electrode layer, the stacked drain electrode layer, and the oxide semiconductor layer 403 (see FIG. 17C).

As the insulating layer 406, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum oxynitride film, a hafnium oxide film, a gallium oxide film, a silicon nitride film, an aluminum nitride film, a silicon nitride oxide film, A single layer or a stacked layer of an inorganic insulating film such as an aluminum nitride oxide film can be used.

Further, a dense inorganic insulating film may be provided over the insulating layer 406. For example, an aluminum oxide film is formed over the insulating layer 406 by a sputtering method. When the aluminum oxide film has a high density (a film density of 3.2 g / cm 3 or more, preferably 3.6 g / cm 3 or more), stable electrical characteristics can be imparted to the transistor 440. The film density can be measured by Rutherford backscattering method or X-ray reflectometry method.

An aluminum oxide film that can be used as an insulating film provided over the transistor 440 has a high blocking effect (blocking effect) that prevents both hydrogen, moisture and other impurities, and oxygen from passing through the film.

Therefore, the aluminum oxide film has a variable factor of hydrogen during and after the manufacturing process,
It functions as a protective film for preventing impurities such as moisture from entering the oxide semiconductor layer 403 and release of oxygen, which is a main component material of the oxide semiconductor, from the oxide semiconductor layer 403.

Further, a planarization insulating film may be formed in order to reduce surface unevenness due to the transistor 440. As the planarization insulating film, an organic material such as polyimide resin, acrylic resin, or benzocyclobutene resin can be used. In addition to the above organic materials, low dielectric constant materials (low
-K material) can be used. Note that the planarization insulating film may be formed by stacking a plurality of insulating films formed using these materials.

For example, an acrylic resin film with a thickness of 1500 nm may be formed as the planarization insulating film. The acrylic resin film can be formed by coating (for example, at 250 ° C. for 1 hour in a nitrogen atmosphere) after coating by a coating method.

Heat treatment may be performed after the planarization insulating film is formed. For example, heat treatment is performed at 250 ° C. for 1 hour in a nitrogen atmosphere.

In this manner, heat treatment may be performed after the transistor 440 is formed. Moreover, you may perform heat processing in multiple times.

A transistor 440 described in this embodiment includes a first barrier layer 475a and a second barrier layer 4
The channel length L is determined by the shortest distance 75b, and the shortest distance between the first barrier layer 475a and the second barrier layer 475b is determined by etching using a resist obtained by exposure using an electron beam as a mask. By using an electron beam, precise exposure and development can be performed to realize a fine pattern, and a fine transistor having a channel length L of less than 50 nm can be manufactured.

Further, an interval wider than the shortest interval between the first barrier layer 475a and the second barrier layer 475b is
It is determined using a photomask. Since the gap wider than the shortest gap between the first barrier layer 475a and the second barrier layer 475b is provided, leakage of the transistor 440 can be reduced.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 9)
This embodiment shows an example that is partially different from the first embodiment. FIG. 18 illustrates a transistor 422 in which the gate electrode has a stacked structure and the fourth barrier layer 475a and the sixth barrier layer 475b are provided over the oxide semiconductor layer 403. 18B is a plan view of the transistor 422, and FIG. 18A is a cross-sectional view taken along line XY in FIG. 18B.

A transistor 422 illustrated in FIGS. 18A and 18B includes a base insulating layer 436 over a substrate 400, a gate electrode layer 401 formed over the base insulating layer 436, and the gate electrode layer 4
A stacked gate insulating layer 402 provided on the gate electrode layer 401, an oxide semiconductor layer 403 provided on the gate electrode layer 401 with the gate insulating layer 402 interposed therebetween, a stacked drain electrode layer, and a stacked source electrode And an insulating layer 406 provided over the oxide semiconductor layer 403
And an insulating layer 407.

The stacked gate electrode layer 401 includes a first barrier layer 401a and a first low-resistance material layer 4.
01b and the second barrier layer 401c, and the diffusion of the first low-resistance material layer 401b made of copper or the like is blocked by the first barrier layer 401a and the second barrier layer 401c. For the first barrier layer 401a and the second barrier layer 401c, titanium, tungsten, molybdenum, titanium nitride, tantalum nitride, or the like is used. Note that the present invention is not limited thereto, and the gate electrode layer 401 may be formed using at least one conductive layer.

The stacked gate insulating layer 402 includes a stacked structure of a first gate insulating layer 402a that blocks diffusion of the first low-resistance material layer 401b and a second gate insulating layer 402b containing excess oxygen. .

In addition, the drain electrode layer formed of a stack includes a third barrier layer 405c, a second low resistance material layer 405a, and a fourth barrier layer 475a, and a second low resistance material made of copper or the like. The diffusion of the layer 405a is blocked by the third barrier layer 405c and the fourth barrier layer 475a. The third barrier layer 405c and the fourth barrier layer 475a are formed using titanium, tungsten, molybdenum, titanium nitride, tantalum nitride, or the like. Note that the drain electrode layer may be formed using at least one conductive layer. The third barrier layer 405c preferably covers part of the side surface of the oxide semiconductor layer 403.
Accordingly, the oxide semiconductor layer 403 can be protected. The fourth barrier layer 475a may cover the side surfaces of the third barrier layer 405c and the second low resistance material layer 405a.

The source electrode layer formed of a stack includes a fifth barrier layer 405d and a third low-resistance material layer 405b.
And a sixth barrier layer 475b, and a third low-resistance material layer 40 made of copper or the like.
The diffusion of 5b is blocked by the fifth barrier layer 405d and the sixth barrier layer 475b. For the fifth barrier layer 405d and the sixth barrier layer 475b, titanium, tungsten, molybdenum, titanium nitride, tantalum nitride, or the like is used. Note that the source electrode layer may be formed using at least one conductive layer. The fifth barrier layer 405d preferably covers part of the side surface of the oxide semiconductor layer 403. Accordingly, the oxide semiconductor layer 403 can be protected. Further, the sixth barrier layer 475b may cover the side surfaces of the fifth barrier layer 405d and the third low-resistance material layer 405b.

The channel length L of the transistor 422 is the same as that of the fourth barrier layer 475a and the sixth barrier layer 475.
The distance between the fourth barrier layer 475a and the sixth barrier layer 475b is determined by etching using a resist obtained by exposure using an electron beam (also referred to as electron beam exposure) as a mask. . A fine pattern is realized by precisely exposing and developing using an electron beam, and the distance between the fourth barrier layer 475a and the sixth barrier layer 475b,
That is, the channel length L can be less than 50 nm, for example, 20 nm or 30 nm. The electron beam can obtain a fine pattern as the acceleration voltage is higher. The electron beam is
As a multi-beam, the processing time per substrate can be shortened. Except for the region where the channel length L is determined, the fourth barrier layer 4 is etched by using a photomask.
75a and the sixth barrier layer 475b may be formed. Note that the thicknesses of the fourth barrier layer 475a and the sixth barrier layer 475b are 5 nm to 30 nm, preferably 5 nm to 10 n.
m or less. In addition, the channel formation region of the oxide semiconductor layer 403 includes a first region having a first thickness and a second region having a second thickness smaller than the first thickness by a plurality of etchings. You may have.

Note that although a semiconductor element is provided over the substrate 400, it is omitted here for simplicity. On the substrate 400, wiring layers 474a and 474b and wiring layers 474a and 474b are provided.
A base insulating layer 436 is provided so as to cover a part of the memory structure.

The insulating layer 406 is preferably an insulating layer containing excess oxygen. A film forming condition in a PCVD method or other sputtering method is set as appropriate, and a SiOx film containing a large amount of oxygen in the film, or oxynitriding is used. A silicon film is used. In addition, when a large amount of excess oxygen is desired to be included in the insulating layer, oxygen may be appropriately added by an ion implantation method, an ion doping method, or plasma treatment.

The insulating layer 407 includes a blocking layer (AlOx) that suppresses release of oxygen from the oxide semiconductor layer.
Etc.). An aluminum oxide film (AlOx) has a high blocking effect (blocking effect) that prevents the film from permeating both hydrogen and impurities such as moisture and oxygen. Therefore, during and after the manufacturing process, the aluminum oxide film is mixed with impurities such as hydrogen and moisture into the oxide semiconductor film, and oxygen from the oxide semiconductor film which is a main component material of the oxide semiconductor. It functions as a protective film that prevents release.

(Embodiment 10)
In this embodiment, another embodiment of a semiconductor device and a method for manufacturing the semiconductor device will be described with reference to FIGS.
It demonstrates using thru | or FIG. Note that the description of Embodiment 9 can be incorporated as appropriate for components having the same reference numerals as those illustrated in FIG.

The transistor of the semiconductor device of this embodiment has a channel length of 50 n as in the ninth embodiment.
It is a transistor that is less than m. For example, a resist mask is formed using exposure using an electron beam, and a source electrode and a drain electrode are formed using the resist mask as an etching mask, whereby a transistor with a short distance between the source electrode and the drain electrode can be manufactured. .

First, a structural example of the semiconductor device of this embodiment will be described with reference to FIGS. FIG.
) Is a schematic plan view, FIG. 19B is a schematic cross-sectional view taken along line AA ′ (in the channel length L direction of the transistor 442) in FIG. 19A, and FIG. It is a cross-sectional schematic diagram of line segment BB '(channel width direction of transistor 442) in (A). In addition, in FIG. 19, the component different from an actual dimension is included.

A transistor 442 illustrated in FIG. 19 is a bottom-gate transistor. A semiconductor device including the transistor 442 illustrated in FIG. 19 includes the base insulating layer 4 formed on the surface of the substrate 400.
36, a gate electrode layer 401 provided to be embedded in the insulating layer 432, a gate insulating layer 402 over the gate electrode layer 401, an oxide semiconductor layer 403 over the gate insulating layer 402, and an oxide On the semiconductor layer 403, the conductive layers 405A and 405B, the conductive layer 475A in contact with the conductive layer 405A, the conductive layer 475B in contact with the conductive layer 405B, and the conductive layers 405A, 405B, 475A, and 475B And an insulating layer 406.

Further, each component will be described below.

As the gate electrode layer 401, for example, a metal material such as molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, or scandium, or an alloy material containing these as a main component can be used. Alternatively, a semiconductor layer typified by a polycrystalline silicon layer doped with an impurity element such as phosphorus, or a silicide layer such as nickel silicide may be used as the gate electrode layer 401. The gate electrode layer 401 may have a single-layer structure or a stacked structure.

The gate electrode layer 401 includes indium tin oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, and indium oxide. A layer of a conductive material such as zinc oxide or indium tin oxide to which silicon oxide is added can also be used. Alternatively, the gate electrode layer 401 can have a stacked structure of the conductive material layer and the metal material layer.

Alternatively, as in the transistor 422 illustrated in FIG. 18, the gate electrode layer 401 may be formed using a stack of the first barrier layer 401a, the first low-resistance material layer 401b, and the second barrier layer 401c.

As the base insulating layer 436 and the gate insulating layer 402, for example, a silicon oxide layer, a gallium oxide layer, an aluminum oxide layer, a silicon nitride layer, a silicon oxynitride layer, an aluminum oxynitride layer, or a silicon nitride oxide layer can be used.

As the base insulating layer 436 and the gate insulating layer 402, hafnium oxide, yttrium oxide, hafnium silicate (HfSi x O y (x> 0, y> 0)), hafnium silicate to which nitrogen is added, hafnium aluminate (HfAl x O y (x> 0, y> 0)
), A gate leakage current can be reduced by using a layer of a high-k material such as lanthanum oxide. Further, the gate insulating layer 402 may have a single-layer structure or a stacked structure.

Note that the base insulating layer 436 and the gate electrode layer 401 are preferably subjected to planarization treatment.

An oxide semiconductor used for the oxide semiconductor layer 403 has a wider band gap than silicon.
Wide gap semiconductor.

The thickness of the oxide semiconductor layer 403 is, for example, 1 nm to 30 nm (preferably 5 n
m to 10 nm).

In addition, the width of the oxide semiconductor layer 403 in the channel length L direction is wider than the width of the gate electrode layer 401 in the channel length L direction. Accordingly, for example, oxygen can be easily supplied to the oxide semiconductor layer from an insulating layer below the oxide semiconductor layer 403.

Further, the channel formation region of the oxide semiconductor layer 403 may include a first region having a first thickness and a second region having a second thickness that is thinner than the first thickness. Good.

The conductive layer 405A and the conductive layer 475A are drain electrode layers of the transistor 442, and the conductive layer 405B and the conductive layer 475B are source electrode layers of the transistor 442.

As the conductive layer 405A and the conductive layer 405B, for example, Al, Cr, Cu, Ta, Ti
A metal layer containing an element selected from Mo, W, or a metal nitride layer (a titanium nitride layer, a molybdenum nitride layer, or a tungsten nitride layer) containing the above-described element as a component can be used.
Further, a refractory metal layer such as Ti, Mo, or W or a metal nitride layer thereof (titanium nitride layer, molybdenum nitride layer, tungsten nitride layer) on one or both of the lower side or upper side of the metal layer such as Al or Cu It is good also as a structure which laminated | stacked. Further, the conductive layer used for the source electrode layer and the drain electrode layer may be formed using a conductive metal oxide. Examples of the conductive metal oxide include indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), and zinc oxide (ZnO
), Indium tin oxide (In 2 O 3 —SnO 2 , abbreviated as ITO), indium zinc oxide (In 2 O 3 —ZnO), or a metal oxide material containing silicon oxide is used. be able to.

As the conductive layer 475A and the conductive layer 475B, for example, Al, Cr, Cu, Ta, Ti
A metal layer containing an element selected from Mo, W, or a metal nitride layer (a titanium nitride layer, a molybdenum nitride layer, or a tungsten nitride layer) containing the above-described element as a component can be used.
Further, a refractory metal layer such as Ti, Mo, or W or a metal nitride layer thereof (titanium nitride layer, molybdenum nitride layer, tungsten nitride layer) on one or both of the lower side or upper side of the metal layer such as Al or Cu It is good also as a structure which laminated | stacked. Further, the conductive layer used for the source electrode layer and the drain electrode layer may be formed using a conductive metal oxide. Examples of the conductive metal oxide include indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), and zinc oxide (ZnO
), Indium tin oxide (In 2 O 3 —SnO 2 , abbreviated as ITO), indium zinc oxide (In 2 O 3 —ZnO), or a metal oxide material containing silicon oxide is used. be able to.

As in the transistor 422 illustrated in FIG. 18, the conductive layer 405A is formed by stacking the third barrier layer 405c and the second low-resistance material layer 405a, and the conductive layer 475A is formed by the fourth barrier layer 475a. May be. As in the transistor 422 illustrated in FIG. 18, the conductive layer 405B is formed by stacking the fifth barrier layer 405d and the third low-resistance material layer 405b, and the conductive layer 475B is formed by the sixth barrier layer 475b. May be.

Note that although the conductive layers 475A and 475B are thinner than the conductive layers 405A and 405B, the present invention is not limited to this. Since the conductive layers 475A and 475B are formed using a resist mask manufactured by electron beam exposure, the thinner one is preferable in the manufacturing process.
Further, by increasing the thickness of the conductive layer 405A and the conductive layer 405B, the resistance of the source electrode and the drain electrode can be reduced.

Further, the distance between the conductive layer 475A and the conductive layer 475B is the same as the distance between the conductive layer 405A and the conductive layer 40.
It is narrower than the interval of 5B. In particular, when the conductive layer 475A and the conductive layer 475B have higher resistance than the conductive layer 405A and the conductive layer 405B, the distance between the conductive layer 475A and the conductive layer 475B is shortened, whereby the source electrode, the oxide semiconductor layer 403, and the drain electrode The resistance between them can be reduced.

Alternatively, as in the transistor 422 in FIG. 18, the conductive layer 475A may cover the top and side surfaces of the conductive layer 405A, and the conductive layer 475B may cover the top and side surfaces of the conductive layer 405B. Thereby, for example, the conductive layers 405A and 405B can be protected by the conductive layers 475A and 475B.

At this time, the channel length L of the transistor is an interval between the conductive layer 475A and the conductive layer 475B. The channel length L is as short as less than 50 nm, for example. For example, the conductive layer 475A and the conductive layer 4 are formed using a resist mask formed by exposure using an electron beam as an etching mask.
By shortening the interval of 75B, the channel length L can be shortened.

As the insulating layer 406, for example, a silicon oxide layer, a silicon oxynitride layer, an aluminum oxide layer, an aluminum oxynitride layer, a hafnium oxide layer, a gallium oxide layer, a silicon nitride layer, an aluminum nitride layer, a silicon nitride oxide layer, or an aluminum nitride oxide layer A single layer or a stacked layer of an inorganic insulating layer such as a layer can be used.

Further, a highly dense inorganic insulating layer may be provided over the insulating layer 406. For example, an aluminum oxide layer to be the insulating layer 407 is formed over the insulating layer 406 by a sputtering method as in the semiconductor device illustrated in FIGS. High density aluminum oxide layer (layer density 3.2 g / cm 3
As described above, preferably, 3.6 g / cm 3 or more), the electrical characteristics of the transistor 442 can be stabilized.

An aluminum oxide layer that can be used as an insulating layer provided over the transistor 442 has a high blocking effect (blocking effect) which prevents both a hydrogen, an impurity such as moisture, and oxygen from passing through the layer.

Therefore, in the aluminum oxide layer, during and after the manufacturing process, impurities such as hydrogen and moisture, which cause fluctuations, are mixed into the oxide semiconductor layer 403, and oxygen that is a main component material of the oxide semiconductor is oxidized. It functions as a protective layer for preventing emission from the physical semiconductor layer 403.

Further, a planarization insulating layer is formed as an insulating layer 406 in order to reduce surface unevenness due to the transistor 442.
It may be formed as a single layer. As the planarization insulating layer, an organic material such as polyimide resin, acrylic resin, or benzocyclobutene resin can be used. In addition to the organic material, a layer of a low dielectric constant material (low-k material) or the like can be used. Note that the planarization insulating layer may be formed by stacking a plurality of insulating layers formed using these materials.

Next, as an example of a method for manufacturing the semiconductor device of this embodiment, a method for manufacturing the semiconductor device illustrated in FIG. 19 will be described with reference to FIGS. 20 to 24 are diagrams illustrating a method for manufacturing the semiconductor device illustrated in FIG. In each of FIGS. 20 to 24, FIG.
The cross-sectional schematic diagram of line segment AA ', the cross-sectional schematic diagram of line segment BB', and a plane schematic diagram are shown corresponding to these. 20 to 24 include components different from actual dimensions.

First, the substrate 400 is prepared, the base insulating layer 436 is formed over the substrate 400, and the base insulating layer 4
A gate electrode layer 401 is formed over 36 (see FIGS. 20A1 to 20A3).

For example, a conductive film of a material that can be used for the gate electrode layer 401 is formed by a sputtering method, and part of the conductive film is selectively etched, so that the gate electrode layer 401 is formed. Etching may be dry etching or wet etching, or both may be used. At this time, impurities on the surface of the gate electrode layer 401 may be removed by exposing the gate electrode layer 401 to oxalic acid, dilute hydrofluoric acid, or the like, or performing plasma treatment (N 2 O plasma treatment or the like).

Further, after the gate electrode layer 401 is formed, heat treatment may be performed on the substrate 400 and the gate electrode layer 401.

Next, an insulating layer 432 is formed over the base insulating layer 436 and the gate electrode layer 401, planarization treatment is performed, the gate electrode layer 401 is exposed, and the base insulating layer 436 and the gate electrode layer 40 are exposed.
1 is flattened (see FIGS. 20B1 to 20B3).

For example, the base insulating layer 436 can be formed by forming a film of a material that can be used for the base insulating layer 436 by a PCVD method. Alternatively, the base insulating layer 436 may be formed by a sputtering method.

Examples of the planarization process include a CMP process.

Next, the gate insulating layer 402 is formed over the gate electrode layer 401, and the oxide semiconductor layer 403 is formed over the gate insulating layer 402.

For example, the gate insulating layer 402 can be formed by forming a film of a material that can be used for the gate insulating layer 402 by a PCVD method.

Note that heat treatment may be performed before the oxide semiconductor layer 403 is formed so that the gate insulating layer 402 is dehydrated or dehydrogenated. For example, heat treatment at 350 ° C. or higher and 450 ° C. or lower may be performed.

Further, oxygen doping treatment is performed on the dehydrated or dehydrogenated gate insulating layer 402, oxygen is supplied to the gate insulating layer 402, and oxygen is added in the gate insulating layer 402 or in the gate insulating layer 402 and in the vicinity of the interface. May be contained in excess. By supplying oxygen to the gate insulating layer 402 after dehydration or dehydrogenation, release of oxygen can be suppressed, so that the gate insulating layer 402
The oxygen concentration of can be increased.

Further, the oxide semiconductor layer 403 is formed, for example, under a condition in which a large amount of oxygen is contained during film formation (for example, film formation is performed by a sputtering method in an atmosphere containing 100% oxygen). Can be formed. The oxide semiconductor film is preferably a film containing a large amount of oxygen (preferably including a region where the amount of oxygen is excessive with respect to the stoichiometric composition of the oxide semiconductor in a crystalline state).

The sputtering gas used for forming the oxide semiconductor film is preferably a high-purity gas from which impurities such as hydrogen, water, a hydroxyl group, or hydride are removed.

In addition, the substrate 400 is held in a deposition chamber that is held under reduced pressure. Then, a sputtering gas from which hydrogen and moisture are removed is introduced while moisture remaining in the deposition chamber is removed, and an oxide semiconductor film is formed over the substrate 400 using the above target. In order to remove moisture remaining in the deposition chamber, it is preferable to use an adsorption-type vacuum pump such as a cryopump, an ion pump, or a titanium sublimation pump. Further, the exhaust means may be a turbo molecular pump provided with a cold trap. In the film formation chamber evacuated using a cryopump, for example, a compound containing hydrogen (hydrogen atom) such as hydrogen (hydrogen atom) or water (H 2 O) (more preferably a compound containing carbon atom) is exhausted. Therefore, the concentration of impurities contained in the oxide semiconductor film formed in the deposition chamber can be reduced.

Alternatively, the gate insulating layer 402 and the oxide semiconductor film may be formed successively without releasing the gate insulating layer 402 to the atmosphere. When the gate insulating layer 402 and the oxide semiconductor film are formed successively without exposing the gate insulating layer 402 to the air, adsorption of impurities such as hydrogen and moisture to the surface of the gate insulating layer 402 can be prevented.

In the case where the gate insulating layer 402 in contact with the oxide semiconductor layer 403 contains a large amount of oxygen, oxygen can be supplied from the gate insulating layer 402 to the oxide semiconductor layer 403.

Further, heat treatment may be performed with the oxide semiconductor layer 403 and the gate insulating layer 402 in contact with each other. Oxygen can be effectively supplied from the gate insulating layer 402 to the oxide semiconductor layer 403 by heat treatment.

Note that heat treatment for supplying oxygen from the gate insulating layer 402 to the oxide semiconductor layer 403 is performed.
This is preferably performed before the oxide semiconductor film is processed into an island shape because oxygen contained in the gate insulating layer 402 can be prevented from being released by heat treatment.

For example, heat treatment is performed at a temperature of 350 ° C. or higher and lower than the strain point of the substrate, preferably 350 ° C. or higher and 450 ° C. or lower. Furthermore, you may heat-process in the subsequent process. At this time, as a heat treatment apparatus for performing the heat treatment, for example, an electric furnace or an apparatus for heating an object to be processed by heat conduction or heat radiation from a heating element such as a resistance heating element can be used.
(Gas Rapid Thermal Annealing) device or LRTA (L
RTA (Rap) such as amp Rapid Thermal Annealing)
id Thermal Annealing) device can be used.

In addition, after performing the above heat treatment, a high purity oxygen gas, a high purity N 2 O gas, or the same furnace as the furnace that performed the heat treatment while maintaining the heating temperature or in the process of lowering the temperature from the heating temperature, Ultra-dry air (an atmosphere having a dew point of −40 ° C. or lower, preferably −60 ° C. or lower) may be introduced. At this time, the oxygen gas or the N 2 O gas preferably does not contain water, hydrogen, or the like.
Further, the purity of the oxygen gas or N 2 O gas introduced into the heat treatment apparatus is 6 N or more, preferably 7 N or more, that is, the impurity concentration in the oxygen gas or N 2 O gas is 1 ppm or less, preferably 0.1 ppm or less. It is preferable to do. By the action of oxygen gas or N 2 O gas,
Oxygen is supplied to the oxide semiconductor layer, so that defects due to oxygen deficiency in the oxide semiconductor layer can be reduced. The introduction of the high purity oxygen gas, high purity N 2 O gas, or ultra-dry air
You may perform at the time of the said heat processing.

Further, oxygen doping is performed, and the oxide semiconductor layer 403 is doped with oxygen 451 (FIG. 2).
0 (C1) to (C3)).

For example, oxygen 451 (oxygen radicals, oxygen atoms, oxygen molecules, ozone, oxygen ions (oxygen molecular ions) and / or oxygen cluster ions using an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like. ) Can be doped. A gas cluster ion beam may be used as the ion implantation method.

By supplying oxygen to the oxide semiconductor layer 403, oxygen vacancies in the oxide semiconductor layer 403 can be filled.

Next, the oxide semiconductor layer 403 is processed by a photolithography step, so that the island-shaped oxide semiconductor layer 403 is formed (see FIGS. 21A1 to 21A3).

Further, a resist mask for forming the island-shaped oxide semiconductor layer 403 may be formed by an inkjet method. When the resist mask is formed by an ink-jet method, a manufacturing cost can be reduced because a photomask is not used.

Note that the oxide semiconductor layer 403 may be formed by dry etching or wet etching, or both. For example, as an etchant used for wet etching of the oxide semiconductor layer 403, a mixed solution of phosphoric acid, acetic acid, and nitric acid, or the like can be used. Moreover, ITO-07N (manufactured by Kanto Chemical Co., Inc.) may be used. Moreover, you may etch by the dry etching by ICP etching method.

Next, over the gate electrode layer 401, the gate insulating layer 402, and the oxide semiconductor layer 403,
A conductive film 452 is formed (see FIGS. 21B1 to 21B3).

For example, the conductive film 452 is formed by forming a film of a material that can be used for the conductive layers 405A and 405B by a sputtering method or the like.

Next, a resist mask 453 is formed over part of the conductive film 452 by a photolithography method (see FIGS. 21C1 to 21C3).

Next, the conductive film 452 is selectively etched using the resist mask 453 as a mask, so that the conductive layers 405A and 405B are formed (see FIGS. 22A-1 to 22A-3).
At this time, the distance between the conductive layer 405A and the conductive layer 405B is determined by the photomask used when the resist mask 453 is formed. Note that at this time, it is preferable that the oxide semiconductor layer 403 not be etched; however, part of the oxide semiconductor layer 403 is etched;
A first region having a first thickness may be formed. At this time, the oxide semiconductor layer 403
In the case where impurities adhere to the surface, it is preferable to remove impurities on the surface of the oxide semiconductor layer 403 by exposure to oxalic acid, diluted hydrofluoric acid, or the like, or plasma treatment (N 2 O plasma treatment or the like). .

Next, a conductive film 454 is formed to cover the conductive layers 405A and 405B (FIG. 22B
-1) to (B-3)).

For example, the conductive film 454 is formed by forming a film of a material that can be used for the conductive layers 475A and 475B by a sputtering method or the like.

Next, a resist is formed over the conductive film 454, and exposure using an electron beam is performed on the resist, so that a resist mask 455 is formed (see FIGS. 22C-1 to 22C-3). As is apparent from FIGS. 22C-1 to 22C-3, the resist mask 455 has a slit (or a slit-like groove). As in the third embodiment, the resist mask 4
55 may have a ring-shaped groove.

As the resist material, for example, a siloxane resist or a polystyrene resist can be used. Note that since the width of the pattern to be formed is small, it is preferable to use a positive resist rather than a negative resist. Further, the thickness of the resist material is preferably in a relationship of 1: 1 to 1: 2, for example, with the width of the pattern to be produced. For example, the pattern width is 3
In the case of 0 nm, the resist thickness can be 30 nm.

In exposure using an electron beam, the resist mask 455 is preferably thinner than the resist mask 453. In the case where the resist mask 455 is thinned, it is preferable that the unevenness of the surface to be formed be as flat as possible. In the method for manufacturing a semiconductor device of this embodiment, planarization treatment is performed on the gate electrode layer 401 and the base insulating layer 436 so that unevenness due to the gate electrode layer 401 and the insulating layer 432 is reduced; can do. Thereby, exposure using an electron beam can be performed precisely.

At this time, in the electron beam lithography apparatus capable of electron beam irradiation, for example, the acceleration voltage is
It is preferably 5 kV to 50 kV. The current intensity is 5 × 10 −12 to 1 × 10.
It is preferably −11 A. The minimum beam diameter is preferably 2 nm or less. Moreover, it is preferable that the minimum line width of the pattern which can be produced is 8 nm or less.

Under the above conditions, for example, the pattern width can be 30 nm or less, preferably 20 nm or less, and more preferably 8 nm or less.

Next, the conductive film 454 is selectively etched using the resist mask 455 as a mask, so that openings are formed in regions where channels are formed (see FIGS. 23A-1 to 23A-3). Note that at this time, it is preferable that the oxide semiconductor layer 403 not be etched; however, part of the oxide semiconductor layer 403 is etched to form a second region having a second thickness smaller than the first thickness. May be. At this time, in the case where impurities adhere to the surface of the oxide semiconductor layer 403, the oxide semiconductor layer 403 is exposed to oxalic acid, dilute hydrofluoric acid, or the like, or plasma treatment (N 2 O plasma treatment or the like) is performed. It is preferable to remove surface impurities.

In addition, it is preferable that the etching conditions be such that the etching selectivity between the thin resist mask 455 and the conductive film 454 is high. For example, in dry etching, it is preferable to use a mixed gas of Cl 2 and HBr as an etching gas and to make the flow rate of HBr higher than the flow rate of Cl 2 . For example, a flow rate ratio of Cl 2 : HBr = 20: 80 is preferable. In the case of etching by inductively coupled plasma (also called ICP etching), ICP
When the power is 500 W, the etching selectivity between the resist mask 455 and the conductive film 454 can be increased by setting the bias power to 30 W to 40 W or less.

Next, a resist mask 456 is formed over the conductive film 454 by a photolithography method (see FIGS. 23B1 to 23B3). At this time, it is preferable that the oxide semiconductor layer 403 not be exposed by the resist mask 456. In addition, the conductive film 45 in the channel width direction.
The resist mask 456 may be formed up to 4 above.

Next, the conductive film 454 is selectively etched using the resist mask 456 as a mask, so that the conductive layers 475A and 475B are formed (see FIGS. 24A1 to 24A3). At this time, the distance between the conductive layer 475A and the conductive layer 475B is determined by exposure using the electron beam used in forming the resist mask 455.

For example, the conductive film 454 can be etched by dry etching.

Next, the insulating layer 406 is formed over the oxide semiconductor layer 403, the conductive layers 405A and 405B, and the conductive layers 475A and 475B (see FIGS. 24B1 to 24B3).

For example, by forming a film of a material applicable to the insulating layer 406 using a PCVD method,
An insulating layer 406 can be formed. Note that the insulating layer 406 may be formed by a sputtering method.

Note that oxygen doping may be performed on the insulating layer 406. For example, the gate insulating layer 402
Alternatively, treatment similar to that for oxygen doping of the oxide semiconductor layer 403 can be performed.

Further, heat treatment may be performed after the insulating layer 406 is formed. For example, under a nitrogen atmosphere 25
Heat treatment is performed at 0 ° C. for 1 hour.

Through the above, the transistor 442 can be manufactured. At this time, the transistor 44 to be manufactured
The channel length L of 2 is as short as less than 50 nm.

Further, the oxide semiconductor layer which is dehydrated or dehydrogenated, supplied with oxygen, and purified is used for the transistor 442, so that the carrier density of the oxide semiconductor layer is 1 × 10 14 / cm.
Less than 3 , preferably less than 1 × 10 12 / cm 3 , more preferably 1 × 10 11 / cm 3
Can be less. At this time, the off current of the transistor per channel width of 1 μm with a channel length of 50 nm is 10 aA (1 × 10 −17 A) or less, and further 1 aA (1 × 10 −18 A)
A) or less, further 10 zA (1 × 10 −20 A) or less, and further 1 zA (1 × 10 −2)
1 A) or less, more preferably 100 yA (1 × 10 −22 A) or less. The lower the off-state current of the transistor, the better. However, the lower limit of the off-state current of the transistor is
It is estimated to be about 10 −30 A / μm.

Further, heat treatment may be performed after the transistor 442 is manufactured. At this time, the heat treatment may be performed a plurality of times.

The above is the manufacturing method of the semiconductor device of this embodiment.

As described with reference to FIGS. 19 to 24, in the example of the semiconductor device of this embodiment, a conductive layer functioning as a source electrode or a drain electrode is a stack of a plurality of conductive layers, and an upper conductive layer is an electron beam. By performing selective etching using a resist mask formed by exposure using, an interval between conductive layers to be formed can be shortened, and a width in a channel length direction can be shortened.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

(Embodiment 11)
In this embodiment mode, the transistor described in Embodiment Modes 9 and 10 is used, a semiconductor device that can hold stored contents even when power is not supplied and has no limit on the number of writing times (memory) An example of the apparatus will be described with reference to the drawings. FIG. 25A is a cross-sectional view of the semiconductor device, and FIG. 25B is a circuit diagram of the semiconductor device.

Note that the fourth embodiment is the same as the fourth embodiment except for the structure of the transistor, and thus detailed description thereof is omitted. The semiconductor device illustrated in FIG. 25 includes a transistor 3200 using a first semiconductor material in a lower portion and a transistor 3202 using a second semiconductor material in an upper portion. One of a source electrode layer and a drain electrode layer of the transistor 3202 is electrically connected to the electrode 3208 through an opening provided in the gate insulating layer.
Are electrically connected to the gate electrode layer of the transistor 3200. The electrode 3208 includes a conductive layer 3208a, a conductive layer 3208b, and a conductive layer 3208c. Each conductive layer can be manufactured in the same process as the gate electrode layer of the transistor 3202. Transistor 320
2 is an example in which the structure of the transistor 422 described in Embodiment 9 is applied.

In the semiconductor device described in this embodiment, stored data can be held for an extremely long time by using a transistor with an extremely small off-state current that uses an oxide semiconductor for a channel formation region. That is, the refresh operation is not necessary or the frequency of the refresh operation can be extremely low, so that power consumption can be sufficiently reduced. In addition, stored data can be held for a long time even when power is not supplied (note that a potential is preferably fixed).

In addition, in the semiconductor device described in this embodiment, high voltage is not needed for writing data and there is no problem of deterioration of elements. For example, there is no need to inject electrons into the floating gate or withdraw electrons from the floating gate unlike conventional nonvolatile memories.
There is no problem of deterioration of the gate insulating film. That is, in the semiconductor device according to the disclosed invention, the number of rewritable times that is a problem in the conventional nonvolatile memory is not limited, and the reliability is dramatically improved. Further, since data is written depending on the on / off state of the transistor, high-speed operation can be easily realized.

As described above, a semiconductor device which is miniaturized and highly integrated and has high electrical characteristics, and a method for manufacturing the semiconductor device can be provided.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

(Embodiment 12)
In this embodiment, one embodiment of a structure of a memory device, which is different from that in Embodiment 11, will be described. FIG. 9 is a perspective view of the storage device, and since it has been described in the fifth embodiment, detailed description thereof is omitted here. The memory device shown in FIG. 9 includes a plurality of memory cells as a memory circuit in the upper part, a plurality of memory cell arrays, and a logic circuit 3 necessary for operating the memory cell array in the lower part.
004.

FIG. 26 is a partially enlarged view of the storage device shown in FIG. In FIG. 26, the logic circuit 3004,
A memory cell array 3400a and a memory cell array 3400b are illustrated, and among the plurality of memory cells included in the memory cell array 3400a or the memory cell array 3400b, the memory cell 3170a and the memory cell 3170b are shown as representatives. Memory cell 3170a
For example, the memory cell 3170b can have a configuration similar to the circuit configuration described in the above embodiment.

Note that a transistor 3171a included in the memory cell 3170a is shown as a representative. Conductive layers 3501a1 and 351 formed using the same layer as the gate electrode layer of the transistor 3171a.
The electrode composed of 01a2 and 3501a3 is electrically connected to the electrode 3003a by the electrode 3502a. The wiring 3100a is formed using the same layer as the gate electrode layer of the transistor 3171a by the electrode 3503a, and conductive layers 3501b1 and 3501.
It can be electrically connected to an electrode composed of 1b2 and 3501b3. Thus, the wiring 3
100a and the electrode 3303 can be electrically connected to a source electrode layer or a drain electrode layer of the transistor 3171a. In addition, the conductive layers 3501b1, 3501b2, and 35
The electrode made of 01b3 can be electrically connected to the electrode 3003b by the source or drain electrode layer of the transistor 3171a and the electrode 3502b. A transistor 3171b included in the memory cell 3170b is shown as a representative. Transistor 317
Conductive layers 3501c1, 3501c2, 350 formed in the same layer as the gate electrode layer 1b.
The electrode made of 1c3 is electrically connected to the electrode 3003c by the electrode 3502c. The transistor 3171a and the transistor 3171b each include a channel formation region in the oxide semiconductor layer. The structure of the transistor in which the channel formation region is formed in the oxide semiconductor layer is similar to the structure described in Embodiments 9 and 10, and thus description thereof is omitted.

Further, in FIG. 26, between the layer in which the transistor 3171a is formed and the layer in which the transistor 3001 is formed, the wiring layer in which the wiring 3100a is formed and the wiring layer in which the wiring 3100b is formed are 2 Although a configuration in which one wiring layer is provided is shown, the present invention is not limited to this. Between the layer in which the transistor 3171a is formed and the layer in which the transistor 3001 is formed,
One wiring layer may be provided, or three or more wiring layers may be provided.

In FIG. 26, the layer in which the transistor 3171b is formed and the transistor 3171a
Although a structure in which two wiring layers, a wiring layer in which the wiring 3100c is formed and a wiring layer in which the wiring 3100d is formed, is provided between the layers in which the wiring 3100d is formed is not limited thereto. One wiring layer may be provided between the layer in which the transistor 3171b is formed and the layer in which the transistor 3171a is formed, or three or more wiring layers may be provided.

The structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

400 substrate 401 gate electrode layer 402 gate insulating layer 403 oxide semiconductor layer 404 conductive film 405 conductive film 405A conductive layer 405B conductive layer 405a low resistance material layer 405b low resistance material layer 405c first barrier layer 405d second barrier layer 406 Insulating layer 407 Insulating layer 420 Transistor 422 Capacitor 431 Transistor 432 Insulating layer 436 Underlying insulating layer 440 Transistor 441 Oxide semiconductor film 442 Transistor 451 Oxygen 452 Conductive film 453 Resist mask 455 Resist mask 456 Resist mask 457 Resist mask 460 Transistor 474a Wiring Layer 474b wiring layer 475 conductive film 475A conductive layer 475B conductive layer 475a barrier layer 475b barrier layer 503 oxide semiconductor layer 505a low resistance material layer 505 Low resistance material layer 575a Barrier layer 575b Barrier layer 585a Wiring layer 585b Wiring layer 3000 Substrate 3001 Transistor 3003a Electrode 3003b Electrode 3003c Electrode 3004 Logic circuit 3100a Wiring 3100b Wiring 3100c Wiring 3100d Wiring 3106 Element isolation insulating layer 3140a Insulating film 3140b Insulating film 3141b Film 3141b Insulating film 3142a Insulating film 3142b Insulating film 3170a Memory cell 3170b Memory cell 3171a Transistor 3171b Transistor 3200 Transistor 3202 Transistor 3204 Capacitor element 3208 Electrode 3208a Conductive layer 3208b Conductive layer 3208c Conductive layer 3210a Conductive layer 3210b Conductive layer 3212 Electrode 3216 Wiring 3220 Layer 3222 Insulating layer 3224 Insulating layer 33 3 electrode 3400a memory cell array 3400b memory cell array 3400n memory cell array 3501a1 conductive layer 3501a2 conductive layer 3501a3 conductive layer 3501b1 conductive layer 3501b2 conductive layer 3501b3 conductive layer 3501c1 conductive layer 3501c2 conductive layer 3501c3 conductive layer 3501a electrode 3501b electrode 3502c electrode 3502c electrode 3502c electrode 3502c electrode 3502c electrode 3502c 3503a Electrode 3503b Electrode 3505 Electrode 9033 Fastener 9034 Display mode changeover switch 9035 Power switch 9036 Power saving mode changeover switch 9038 Operation switch 9630 Housing 9631 Display unit 9631a Display unit 9631b Display unit 9632a Region 9632b Region 9633 Solar cell 9634 Charge / discharge control circuit 9635 battery 96 6 DCDC converter 9637 converter 9638 operation key 9639 button

Claims (2)

  1. Forming a first conductive film over the oxide semiconductor film;
    Forming a resist on the first conductive film and performing exposure using an electron beam to form a first resist overlapping with the oxide semiconductor film other than a portion to be a channel region;
    Selectively etching the first conductive film using the first resist to form a second conductive film and a third conductive film from the first conductive film;
    A resist is formed on the oxide semiconductor film, the second conductive film, and the third conductive film, and exposure is performed using a photomask to form a second resist.
    The oxide semiconductor film, the second conductive film, and the third conductive film are etched using the second resist to form an island-shaped oxide semiconductor layer, an island-shaped second conductive layer, And a method for manufacturing a semiconductor device, wherein an island-shaped third conductive layer is formed.
  2. Forming a gate electrode layer embedded in an insulating layer;
    Forming a gate insulating layer on the insulating layer and the gate electrode layer;
    Forming an oxide semiconductor film over the gate insulating layer;
    Wherein the oxide semiconductor film, forming a first conductive film,
    Forming a resist on the first conductive film and performing exposure using an electron beam to form a first resist overlapping with the oxide semiconductor film other than a portion to be a channel region;
    Selectively etching the first conductive film using the first resist, and forming the first conductive film or we second conductive film and the third conductive film,
    A resist is formed on the oxide semiconductor film, the second conductive film, and the third conductive film , and exposure is performed using a photomask to form a second resist.
    The oxide semiconductor film, the second conductive film, and the third conductive film are etched using the second resist to form an island-shaped oxide semiconductor layer, an island-shaped second conductive layer, And a method for manufacturing a semiconductor device, wherein an island-shaped third conductive layer is formed.
JP2016198316A 2011-12-02 2016-10-06 Method for manufacturing semiconductor device Active JP6200054B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011265158 2011-12-02
JP2011265036 2011-12-02
JP2011265158 2011-12-02
JP2011264973 2011-12-02
JP2011264973 2011-12-02
JP2011265036 2011-12-02
JP2011283789 2011-12-26
JP2011283789 2011-12-26

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2012262983 Division 2012-11-30

Publications (2)

Publication Number Publication Date
JP2017005279A JP2017005279A (en) 2017-01-05
JP6200054B2 true JP6200054B2 (en) 2017-09-20

Family

ID=48523358

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012262983A Active JP6022913B2 (en) 2011-12-02 2012-11-30 Method for manufacturing semiconductor device
JP2016198316A Active JP6200054B2 (en) 2011-12-02 2016-10-06 Method for manufacturing semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2012262983A Active JP6022913B2 (en) 2011-12-02 2012-11-30 Method for manufacturing semiconductor device

Country Status (6)

Country Link
US (2) US9142679B2 (en)
EP (1) EP2786404A4 (en)
JP (2) JP6022913B2 (en)
KR (1) KR20140101817A (en)
TW (1) TWI570924B (en)
WO (1) WO2013080900A1 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471946B (en) * 2010-11-17 2015-02-01 Innolux Corp Thin film transistors
US8829528B2 (en) * 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6053490B2 (en) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI584383B (en) 2011-12-27 2017-05-21 Semiconductor Energy Lab Semiconductor device and manufacturing method
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6059501B2 (en) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6283191B2 (en) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
JP2014082388A (en) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6021586B2 (en) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device
JP6204145B2 (en) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 Semiconductor device
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (en) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
JP6329762B2 (en) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 Semiconductor device
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR20140113354A (en) 2013-03-14 2014-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP6355374B2 (en) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI631711B (en) * 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 Semiconductor device
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20150014808A (en) * 2013-07-30 2015-02-09 엘지디스플레이 주식회사 Organic Light Emitting Diode Display Having Thin Film Transistor Substrate Using Oxide Semiconductor And Method For Manufacturing The Same
KR20160098497A (en) * 2013-12-25 2016-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US10290908B2 (en) * 2014-02-14 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6120794B2 (en) * 2014-03-26 2017-04-26 三菱電機株式会社 Thin film transistor substrate and manufacturing method thereof
KR20170051449A (en) 2014-09-19 2017-05-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
TWI570931B (en) * 2014-09-24 2017-02-11 世界先進積體電路股份有限公司 High-voltage semiconductor device and manufacturing method thereof
CN107430461A (en) * 2015-03-17 2017-12-01 株式会社半导体能源研究所 Touch panel
CN105226071B (en) * 2015-10-30 2018-06-05 京东方科技集团股份有限公司 Kinds of display substrate and manufacturing method, a display device
JP2017130655A (en) * 2016-01-15 2017-07-27 株式会社半導体エネルギー研究所 Semiconductor device
CN109478514A (en) * 2016-07-26 2019-03-15 株式会社半导体能源研究所 Semiconductor device
JP2018049920A (en) * 2016-09-21 2018-03-29 ルネサスエレクトロニクス株式会社 Method for manufacturing semiconductor device
KR20190088492A (en) * 2016-12-02 2019-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device

Family Cites Families (133)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (en) 1984-03-23 1985-10-08 Fujitsu Ltd Thin film transistor
JPH0244256B2 (en) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244259B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho
JPH0244258B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (en) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (en) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05216069A (en) * 1991-12-09 1993-08-27 Oki Electric Ind Co Ltd Production of lower substrate of active matrix liquid crystal display
JPH05251705A (en) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP3479375B2 (en) 1995-03-27 2003-12-15 科学技術振興事業団 Nitrous metal oxide to form a thin film transistor and a pn junction by the metal oxide semiconductor of copper oxide such as a semiconductor device and a method for their preparation
DE69635107D1 (en) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv A semiconductor device with a transparent switching element
JP3625598B2 (en) 1995-12-30 2005-03-02 三星電子株式会社 A method of manufacturing a liquid crystal display device
JP4170454B2 (en) 1998-07-24 2008-10-22 Hoya株式会社 Article and manufacturing method thereof having a transparent conductive oxide thin film
JP2000150861A (en) 1998-11-16 2000-05-30 Hiroshi Kawazoe Oxide thin film
JP3276930B2 (en) 1998-11-17 2002-04-22 科学技術振興事業団 Transistor and semiconductor device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (en) 2000-09-01 2008-05-28 国立大学法人東北大学 Semiconductor device
KR20020038482A (en) 2000-11-15 2002-05-23 모리시타 요이찌 Thin film transistor array, method for producing the same, and display panel using the same
JP3997731B2 (en) 2001-03-19 2007-10-24 富士ゼロックス株式会社 A method of forming a crystalline semiconductor thin film on a substrate
JP2002289859A (en) 2001-03-23 2002-10-04 Minolta Co Ltd Thin-film transistor
JP3925839B2 (en) 2001-09-10 2007-06-06 シャープ株式会社 The semiconductor memory device and its testing method
JP4090716B2 (en) 2001-09-10 2008-05-28 シャープ株式会社 Thin film transistor and a matrix display device
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (en) 2002-02-21 2008-04-30 裕道 太田 LnCuO (S, Se, Te) The method of producing single crystal thin film
CN1445821A (en) 2002-03-15 2003-10-01 三洋电机株式会社 Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
JP3933591B2 (en) 2002-03-26 2007-06-20 三菱重工業株式会社 The organic electroluminescent element
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (en) 2002-06-13 2004-01-22 Murata Mfg Co Ltd Manufacturing method of semiconductor device and its manufacturing method
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP2004087682A (en) * 2002-08-26 2004-03-18 Chi Mei Electronics Corp Thin-film transistor, image display element, and image display device
JP4164562B2 (en) 2002-09-11 2008-10-15 Hoya株式会社 Transparent thin film field effect transistor using homologous film as an active layer
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (en) 2003-03-06 2008-10-15 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2004273732A (en) 2003-03-07 2004-09-30 Masashi Kawasaki Active matrix substrate and its producing process
JP4342826B2 (en) * 2003-04-23 2009-10-14 株式会社半導体エネルギー研究所 A method for manufacturing a semiconductor element
JP4108633B2 (en) 2003-06-20 2008-06-25 シャープ株式会社 Thin film transistor and its manufacturing method, and electronic device
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
KR100980020B1 (en) * 2003-08-28 2010-09-03 삼성전자주식회사 Thin film transistor array panel and manufacturing method thereof
WO2005071756A1 (en) 2004-01-26 2005-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, television set, and method for manufacturing the same
CN100499170C (en) 2004-01-26 2009-06-10 株式会社半导体能源研究所 Semiconductor device, TV set, and manufacturing methods thereof
JP4939756B2 (en) * 2004-01-26 2012-05-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7371625B2 (en) * 2004-02-13 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, liquid crystal television system, and EL television system
JP4754841B2 (en) * 2004-02-13 2011-08-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
CN102354658B (en) 2004-03-12 2015-04-01 独立行政法人科学技术振兴机构 Method of manufacturing thin film transistor
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (en) * 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
BRPI0517560B8 (en) 2004-11-10 2018-12-11 Canon Kk field effect transistor
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7601984B2 (en) 2004-11-10 2009-10-13 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CN101057333B (en) 2004-11-10 2011-11-16 佳能株式会社 Light emitting device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7405129B2 (en) * 2004-11-18 2008-07-29 International Business Machines Corporation Device comprising doped nano-component and method of forming the device
JP4339232B2 (en) * 2004-11-26 2009-10-07 Nec液晶テクノロジー株式会社 Photomask and a manufacturing method thereof for Akuteibu matrix display device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI390735B (en) 2005-01-28 2013-03-21 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI472037B (en) 2005-01-28 2015-02-01 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
JP4887646B2 (en) * 2005-03-31 2012-02-29 凸版印刷株式会社 Thin film transistor device and its manufacturing method, thin film transistor array and thin film transistor display
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (en) 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (en) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 Organic Light Emitting Display and Fabrication Method for the same
JP2007059128A (en) 2005-08-23 2007-03-08 Canon Inc Organic electroluminescent display device and manufacturing method thereof
JP4280736B2 (en) 2005-09-06 2009-06-17 キヤノン株式会社 Semiconductor element
JP2007073705A (en) 2005-09-06 2007-03-22 Canon Inc Oxide-semiconductor channel film transistor and its method of manufacturing same
JP4850457B2 (en) 2005-09-06 2012-01-11 キヤノン株式会社 Thin film transistor and thin film diode
JP5116225B2 (en) 2005-09-06 2013-01-09 キヤノン株式会社 Manufacturing method of oxide semiconductor device
EP1995787A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method therof
JP5037808B2 (en) 2005-10-20 2012-10-03 キヤノン株式会社 Field effect transistor using amorphous oxide, and display device using the transistor
JP5023465B2 (en) * 2005-10-20 2012-09-12 カシオ計算機株式会社 Thin film transistor panel
CN101707212B (en) 2005-11-15 2012-07-11 株式会社半导体能源研究所 Semiconductor device and method of manufacturing the
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (en) 2006-01-21 2012-07-18 三星電子株式会社Samsung Electronics Co.,Ltd. ZnO film and method of manufacturing TFT using the same
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (en) 2006-04-11 2007-10-17 삼성전자주식회사 Zno thin film transistor
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (en) 2006-06-13 2012-09-19 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4609797B2 (en) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 Thin film device and manufacturing method thereof
JP4999400B2 (en) 2006-08-09 2012-08-15 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4565573B2 (en) 2006-09-07 2010-10-20 株式会社フューチャービジョン A method of manufacturing a liquid crystal display panel
JP4332545B2 (en) 2006-09-15 2009-09-16 キヤノン株式会社 Field effect transistor and manufacturing method thereof
JP4274219B2 (en) 2006-09-27 2009-06-03 セイコーエプソン株式会社 Electronic devices, organic electroluminescent devices, organic thin-film semiconductor device
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
JP5116290B2 (en) * 2006-11-21 2013-01-09 キヤノン株式会社 Thin film transistor manufacturing method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (en) 2006-12-04 2008-06-19 Toppan Printing Co Ltd Color el display, and its manufacturing method
KR101303578B1 (en) 2007-01-05 2013-09-09 삼성전자주식회사 Etching method of thin film
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP2008185970A (en) * 2007-01-31 2008-08-14 Renesas Technology Corp Pattern forming method, manufacturing method of electronic device, and electronic device
KR100851215B1 (en) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light-emitting dislplay device having the thin film transistor
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (en) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 Thin film transistor substrate and manufacturing method thereof
KR20080094300A (en) 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistor and method of manufacturing the same and flat panel display comprising the same
KR101334181B1 (en) 2007-04-20 2013-11-28 삼성전자주식회사 Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (en) 2007-05-29 2013-12-24 삼성전자주식회사 Fabrication method of ZnO family Thin film transistor
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
TWI495108B (en) * 2008-07-31 2015-08-01 Semiconductor Energy Lab Method for manufacturing semiconductor devices
JP4623179B2 (en) 2008-09-18 2011-02-02 ソニー株式会社 Thin film transistor and a manufacturing method thereof
JP5451280B2 (en) 2008-10-09 2014-03-26 キヤノン株式会社 Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP2010182929A (en) * 2009-02-06 2010-08-19 Fujifilm Corp Manufacturing method of field effect transistor
JP2010192660A (en) * 2009-02-18 2010-09-02 Mitsubishi Electric Corp Thin-film transistor, and method of manufacturing the same
US8115511B2 (en) * 2009-04-14 2012-02-14 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
JP2010262006A (en) * 2009-04-30 2010-11-18 Sony Corp Display device, method of manufacturing the same, semiconductor device, and electronic apparatus
KR101218090B1 (en) * 2009-05-27 2013-01-18 엘지디스플레이 주식회사 Oxide thin film transistor and method of fabricating the same
KR101812683B1 (en) 2009-10-21 2017-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
EP2494596A4 (en) 2009-10-29 2016-05-11 Semiconductor Energy Lab Semiconductor device
KR101752518B1 (en) * 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20170072965A (en) * 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Sputtering target and manufacturing method thereof, and transistor
JP5445590B2 (en) * 2009-11-13 2014-03-19 株式会社島津製作所 Thin film transistor manufacturing method
KR101708607B1 (en) * 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20170142998A (en) 2009-12-25 2017-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101844085B1 (en) 2010-01-22 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
CN102918650B (en) * 2010-04-07 2017-03-22 株式会社半导体能源研究所 Transistor

Also Published As

Publication number Publication date
EP2786404A4 (en) 2015-07-15
TW201330273A (en) 2013-07-16
TWI570924B (en) 2017-02-11
US20150372123A1 (en) 2015-12-24
KR20140101817A (en) 2014-08-20
JP6022913B2 (en) 2016-11-09
US9472656B2 (en) 2016-10-18
EP2786404A1 (en) 2014-10-08
JP2017005279A (en) 2017-01-05
WO2013080900A1 (en) 2013-06-06
JP2013153140A (en) 2013-08-08
US20130140554A1 (en) 2013-06-06
US9142679B2 (en) 2015-09-22

Similar Documents

Publication Publication Date Title
JP6431150B2 (en) Semiconductor device
JP5651458B2 (en) Semiconductor device
JP5975639B2 (en) Semiconductor device
JP6109977B2 (en) Semiconductor device
JP6438999B2 (en) Semiconductor device
TWI644437B (en) Semiconductor device and method for fabricating the same
KR101637664B1 (en) Storage element, storage device, signal processing circuit and semiconductor device
JP6211847B2 (en) Semiconductor device
JP5934566B2 (en) Semiconductor device
US9559213B2 (en) Semiconductor device
KR20130025871A (en) Method for manufacturing semiconductor device
US8787084B2 (en) Semiconductor device and driving method thereof
US9202567B2 (en) Memory circuit
JP6340405B2 (en) Semiconductor device
JP6463434B2 (en) Semiconductor device
US8796681B2 (en) Semiconductor device and method for manufacturing the same
JP6254347B2 (en) Semiconductor device
JP2013009285A (en) Signal processing circuit and method of driving the same
TWI611585B (en) Semiconductor device
US9112037B2 (en) Semiconductor device
US9006803B2 (en) Semiconductor device and method for manufacturing thereof
US8446171B2 (en) Signal processing unit
US9653614B2 (en) Semiconductor device and method for manufacturing the same
JP6184698B2 (en) Method for manufacturing semiconductor device
US9099560B2 (en) Semiconductor device and manufacturing method thereof

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161007

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161007

TRDD Decision of grant or rejection written
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170725

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170801

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170824

R150 Certificate of patent or registration of utility model

Ref document number: 6200054

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150