JP6199397B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP6199397B2
JP6199397B2 JP2015534025A JP2015534025A JP6199397B2 JP 6199397 B2 JP6199397 B2 JP 6199397B2 JP 2015534025 A JP2015534025 A JP 2015534025A JP 2015534025 A JP2015534025 A JP 2015534025A JP 6199397 B2 JP6199397 B2 JP 6199397B2
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thermal stress
insulating substrate
stress absorbing
aluminum
absorbing member
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Expired - Fee Related
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Japanese (ja)
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JPWO2015029511A1 (ja
Inventor
小林　浩
浩 小林
洋平 大本
洋平 大本
真之介 曽田
真之介 曽田
昌樹 田屋
昌樹 田屋
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2015534025A 2013-08-28 2014-05-21 半導体装置およびその製造方法 Expired - Fee Related JP6199397B2 (ja)

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JP2013176218 2013-08-28
JP2013176218 2013-08-28
PCT/JP2014/063466 WO2015029511A1 (ja) 2013-08-28 2014-05-21 半導体装置およびその製造方法

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JP6199397B2 true JP6199397B2 (ja) 2017-09-20

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JP6460921B2 (ja) * 2015-06-15 2019-01-30 三菱電機株式会社 電力半導体装置用冷却装置及びその製造方法
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JP6750263B2 (ja) * 2016-03-18 2020-09-02 富士電機株式会社 電力用半導体モジュール
JP6407216B2 (ja) * 2016-08-10 2018-10-17 株式会社東芝 半導体モジュールおよびその生産方法
JP2018182198A (ja) * 2017-04-19 2018-11-15 株式会社東芝 半導体装置
JP7043794B2 (ja) * 2017-11-06 2022-03-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板およびヒートシンク付パワーモジュール用基板の製造方法
JP2021082617A (ja) * 2018-03-12 2021-05-27 株式会社東芝 半導体装置
JP7259303B2 (ja) * 2018-12-10 2023-04-18 三菱マテリアル株式会社 ヒートシンク付絶縁回路基板及び電子部品モジュール
JP7088224B2 (ja) * 2019-03-19 2022-06-21 株式会社デンソー 半導体モジュールおよびこれに用いられる半導体装置
JP7069082B2 (ja) * 2019-05-08 2022-05-17 三菱電機株式会社 電力用半導体装置およびその製造方法
DE112019007396T5 (de) 2019-06-06 2022-02-17 Mitsubishi Electric Corporation Struktur zur Steuerung einer Wölbung für eine Metallbasisplatte, Halbleitermodul und Inverter-Vorrichtung
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP7484156B2 (ja) 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
TWI755087B (zh) * 2020-10-07 2022-02-11 艾姆勒車電股份有限公司 Igbt模組封裝結構
US11508642B2 (en) 2020-12-30 2022-11-22 Amulaire Thermal Technology, Inc. Power module package structure
DE102022209698A1 (de) * 2022-09-15 2024-03-21 Robert Bosch Gesellschaft mit beschränkter Haftung Fluiddurchströmbarer Kühler zum Kühlen eines Leistungsmoduls

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2523162B2 (ja) * 1987-06-30 1996-08-07 住友電気工業株式会社 半導体装置用部材
JP4407858B2 (ja) * 2000-07-17 2010-02-03 電気化学工業株式会社 モジュール構造体
JP2003007939A (ja) * 2001-06-19 2003-01-10 Mitsubishi Materials Corp ヒートシンク付セラミック回路基板及びその製造方法
JP4387658B2 (ja) * 2002-10-30 2009-12-16 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板及びその製造方法
JP2004152972A (ja) * 2002-10-30 2004-05-27 Mitsubishi Materials Corp ヒートシンク付セラミック回路基板及びその製造方法
JP4055596B2 (ja) * 2003-02-05 2008-03-05 日本発条株式会社 複合材
JP4037425B2 (ja) * 2005-07-04 2008-01-23 電気化学工業株式会社 セラミック回路基板およびそれを用いた電力制御部品。
JP5224430B2 (ja) * 2006-03-17 2013-07-03 株式会社豊田中央研究所 パワー半導体モジュール
JP2008226916A (ja) * 2007-03-08 2008-09-25 Sumitomo Electric Ind Ltd 放熱部品、その製造方法および放熱構造体
JP5261214B2 (ja) * 2009-01-29 2013-08-14 住友軽金属工業株式会社 発熱部品冷却装置用アルミニウム・クラッド材の製造方法
JP2011035308A (ja) * 2009-08-05 2011-02-17 Mitsubishi Materials Corp 放熱板、半導体装置及び放熱板の製造方法
JP2013153116A (ja) * 2012-01-25 2013-08-08 Nakamura Mfg Co Ltd 発熱体冷却装置
JP5608787B2 (ja) * 2013-05-17 2014-10-15 株式会社豊田自動織機 液冷式冷却装置

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