WO2015029511A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2015029511A1
WO2015029511A1 PCT/JP2014/063466 JP2014063466W WO2015029511A1 WO 2015029511 A1 WO2015029511 A1 WO 2015029511A1 JP 2014063466 W JP2014063466 W JP 2014063466W WO 2015029511 A1 WO2015029511 A1 WO 2015029511A1
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Prior art keywords
insulating substrate
aluminum
semiconductor device
stress absorbing
thermal stress
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PCT/JP2014/063466
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English (en)
French (fr)
Japanese (ja)
Inventor
小林　浩
洋平 大本
真之介 曽田
昌樹 田屋
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三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2015534025A priority Critical patent/JP6199397B2/ja
Priority to CN201490000999.3U priority patent/CN205752150U/zh
Publication of WO2015029511A1 publication Critical patent/WO2015029511A1/ja

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Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device that requires heat dissipation and a method for manufacturing the semiconductor device.
  • a semiconductor device using a semiconductor chip such as an IGBT (Insulated Gate Bipolar Transistor)
  • IGBT Insulated Gate Bipolar Transistor
  • a conductive plate made of a highly thermally conductive insulating ceramic plate such as silicon nitride, aluminum nitride, or alumina, and a highly thermally conductive metal such as aluminum or copper (including the same alloy, hereinafter the same) provided on both surfaces thereof.
  • the semiconductor chip is bonded to one surface of a so-called insulating substrate integrated with solder via a bonding material such as solder, and the cooler is directly or indirectly connected to the other surface of the insulating substrate via a bonding material such as solder.
  • a power module that is joined.
  • thermal stress is generated due to the difference in thermal expansion coefficient between the insulating substrate and the cooler, and a crack is generated in the bonding material that joins the insulating substrate and the cooler. In some cases, sufficient heat dissipation performance could not be maintained during the lifetime.
  • Patent Document 1 a proposal has been made to arrange a stress relaxation member between an insulating substrate and a cooler.
  • the stress relaxation member in Patent Document 1 is made of an aluminum plate having a thickness of 0.3 to 3 mm in which a plurality of through holes are formed. Each through hole of the stress relaxation member is a stress absorbing space.
  • the stress relaxation member is brazed to the insulating substrate and the heat sink.
  • the stress relieving member is deformed by the action of the stress absorbing space, thereby relieving the thermal stress.
  • the semiconductor device including the stress relaxation member having the stress absorption space as in Patent Document 1 has two major problems.
  • the first is a heat transfer problem.
  • the average heat transfer coefficient of the stress relaxation member is lower than the average heat transfer coefficient of the base material. This is because the stress absorption space of the stress relaxation member is air, and its heat transfer coefficient is extremely low, so that, on average, the heat transfer coefficient of the base material is lowered by the volume ratio of the stress absorption space. .
  • the heat flow spreads poorly in the stress relaxation member desirably having a thickness of 1 to 4 mm. This is because the heat flow is disturbed by the stress absorption space.
  • a brazing material having a heat transfer coefficient lower than that of the base material is used for the connection portion between the insulating substrate and the heat sink. However, since the number of the connection portions is large, the overall thermal resistance is increased.
  • the second problem is workability.
  • the stress relaxation member and the insulating substrate cannot be brazed in a state where the semiconductor chip is mounted on the insulating substrate because of the processing temperature. That is, it is necessary to perform die bonding and further wire bonding of the semiconductor chip in the state of the substrate ASSY product (collective component) in which the cooler, the stress relaxation member, and the insulating substrate are integrated.
  • ASSY product collective component
  • the insulating substrate is completely fixed, but it is difficult to obtain sufficient rigidity between the cooler and the stress relaxation member because of its structure. Therefore, for example, in a process that requires pressurization, the insulating substrate or chip is cracked and broken. For example, in a processing process using ultrasonic waves, problems such as non-adherence due to ultrasonic loss occur.
  • the present invention has been made to solve the above-described problems, and an object thereof is to provide a semiconductor device having high heat transfer and excellent workability, and a method for manufacturing the same.
  • a semiconductor device includes an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate, a semiconductor chip provided on the insulating substrate, and a back surface of the insulating substrate.
  • a cooling member joined through a material, and the cooling member is a composite member in which a thermal stress absorbing member made of aluminum and a heat conductive metal member are stacked, and the thermal stress absorbing member is the insulating member It is arrange
  • a semiconductor device includes an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate, a semiconductor chip provided on the insulating substrate, and a back surface of the insulating substrate.
  • the cooling member is a composite member in which a thermal stress absorbing member made of aluminum and a heat conductive metal member are integrated, and the thermal stress absorbing member is formed on the back surface of the insulating substrate. It is arrange
  • a method of manufacturing a semiconductor device includes: (a) preparing an insulating substrate including an insulating plate and conductive plates provided on both surfaces of the insulating plate; and (b) a semiconductor on the insulating substrate.
  • a step of disposing a chip (c) a step of forming a cooling member which is a composite member by integrating a thermal stress absorbing member and a heat conducting metal member made of aluminum by hot rolling, and (d) And a step of bonding the thermal stress absorbing member side of the cooling member to the back surface of the insulating substrate via a bonding material, wherein the yield stress of the thermal stress absorbing member is smaller than the yield stress of the bonding material.
  • a method of manufacturing a semiconductor device includes: (a) preparing an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate; and (b) on the insulating substrate.
  • a step of disposing a semiconductor chip includes: (c) a step of forming a cooling member which is a composite member from a heat stress absorbing member and a heat conductive metal member made of aluminum; and (d) the thermal stress of the cooling member.
  • the thermal stress due to the difference from the thermal expansion coefficient can be relaxed by using the thermal stress absorbing member. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
  • FIG. 1 It is sectional drawing which shows the structure of the semiconductor device regarding embodiment. It is a circuit diagram of a general IGBT module for a three-phase inverter. It is sectional drawing at the time of comprising the semiconductor device regarding embodiment with the module of 1 in 1.
  • FIG. It is a top view at the time of comprising the semiconductor device concerning embodiment with a module of 1 in 1.
  • FIG. It is the figure which showed the temperature cycle number dependence of the crack length of a joining material. It is the figure which showed the relationship between the curvature or the wave
  • FIG. 1 is a cross-sectional view showing the structure of a semiconductor device according to this embodiment.
  • FIG. 2 is a circuit diagram of a general IGBT module for a three-phase inverter.
  • FIG. 3 is a cross-sectional view of the semiconductor device according to the present embodiment configured with a 1 in 1 module, and
  • FIG. 4 shows a top view of the module.
  • a plurality of insulating substrates 13 (six here) mounted with a semiconductor chip 11 (here, an IGBT chip, but no diode is shown) are cooled via a bonding material 23. Joined to the member 12. This module is sealed with an epoxy resin 8. Each module is electrically connected by a lead frame 9 via a bonding material 24.
  • the cooling member 12 is a composite member in which a thermal stress absorbing member 1 composed of pure aluminum having a purity of at least 99.5% or more, desirably 99.9% or more, and a heat conductive metal member 2 such as copper or aluminum are stacked. It is.
  • FIG. 5 is a diagram showing the temperature cycle number dependency of the crack length of the joining member in the thermal cycle test ( ⁇ 40 ° C. to 175 ° C.), that is, the crack length of the joining material.
  • the bonding material 23 is high-strength solder
  • the insulating substrate 13 is DBC.
  • the cooling member 12 is a composite material of an aluminum alloy (alloy name A6063) having a thickness of 6 mm and an aluminum having a thickness of 0.5 mm and a purity of 4N (in the figure, “thermal stress absorbing member 0.5t In the bonding material 23 is not substantially cracked.
  • the cooling member 12 is made of only an aluminum alloy (A6063) having a thickness of 6.5 mm (described as “no thermal stress absorbing member” in the figure), a crack develops in the bonding material 23.
  • the thickness 101 of the thermal stress absorbing member 1 shown in FIG. 1 differs in the optimum value depending on the purity of aluminum because the cost relationship with the effect differs depending on the purity of aluminum.
  • an aluminum alloy having a purity of less than 99.0% for example, an aluminum alloy such as alloy designation A6063 (JIS symbol) is used for the heat conductive metal member 2. preferable.
  • the heat conductive metal member 2 also serves as a structural material.
  • the heat conducting metal member 2 needs to have a certain thickness.
  • the thickness 102 of the heat conductive metal member 2 is preferably about 2 mm or more, and preferably 1 mm or more even in the case of fixed use.
  • the thickness is too thick, the increase in thermal resistance becomes remarkable, so it is desirable to set the thickness to 10 mm or less, preferably 4 mm or less.
  • the thermal stress absorbing member 1 is made of high-purity aluminum, deformation such as wrinkles may be seen in a temperature cycle or the like, and the deformation has a great influence on the heat conductive metal member 2 that also serves as a structural material. It is also important not to give
  • FIG. 6 is a diagram showing the maximum swell or warpage of the cooling member 12 after 1000 cycles of the thermal cycle test ( ⁇ 40 ° C. to 175 ° C.).
  • the bonding material 23 is high-strength solder
  • the insulating substrate 13 is DBC. It can be seen that when the thermal conductive metal member 2 (here, aluminum alloy) is 8 times or more than the thermal stress absorbing member 1 (here, pure aluminum having a purity of 4N), there is almost no warpage or undulation. Further, it can be seen that when the heat conductive metal member 2 (here, an aluminum alloy) is thinner than the thermal stress absorbing member 1 (here, pure aluminum having a purity of 4N), deformation such as undulation or warpage is likely to occur.
  • the thermal stress absorbing member 1 when the thermal stress absorbing member 1 is thicker (when the thickness 102 of the heat conducting metal member 2 is less than 1 times the thickness 101 of the thermal stress absorbing member 1), the mechanical characteristics of the cooling member 12 are Since it is governed by the thermal stress absorbing member 1, the swell or warpage is not a controlled value. Therefore, in the ratio of the thickness 101 of the thermal stress absorbing member 1 and the thickness 102 of the heat conducting metal member 2, it is preferable that the heat conducting metal member 2 is thick at least 1 time or more, desirably 8 times or more.
  • thermal stress absorbing member 1 and the heat conducting metal member 2 made in advance is preferably performed by hot rolling from the viewpoint of stability of bonding strength and cost.
  • a thermal stress absorbing member is formed as an aluminum film on the heat conducting metal member 2 by a cold spray method (a method in which a powder material is collided with a base material in a solid state at a melting temperature or lower to form a film) or a thermal spraying method. It is also possible to form 1.
  • the thermal stress absorbing member 1 made of aluminum is the weakest layer, and gradually cracks due to fatigue failure due to temperature cycling.
  • the joining interface between the heat conductive metal member 2 which is also a structural material and the thermal stress absorbing member 1 is formed of a brazing material or the like, it is not in the base material of the thermal stress absorbing member 1 but at the interface part at once, such as interface peeling. Cracks may develop. Therefore, it is desirable that the heat conductive metal member 2 and the thermal stress absorbing member 1 be joined directly without a joining material.
  • the surface of the thermal stress absorbing member 1 in the cooling member 12 formed in this way may be surface-treated with, for example, Ni plating. Further, in order to increase the heat transfer coefficient of the cooling member 12, it is preferable that the heat conducting metal member 2 has a surface area enlarged by forming fins or grooves.
  • a water jacket 21 for liquid cooling type cooling can be provided below the heat conducting metal member 2.
  • the water jacket 21 is made of, for example, an aluminum alloy and is connected to the heat conducting metal member 2.
  • the semiconductor chip 11 is bonded onto the insulating substrate 13 via the die bonding material 22.
  • the die bond material 22 for example, a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material such as Cu—Sn or Ag—Sn, or a bonding material that is a good electrical and thermal conductor such as solder is used. Can do.
  • the semiconductor chip 11 and the insulating substrate 13 may be bonded by direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding.
  • the insulating substrate 13 includes a conductive plate 5 in contact with the die bond material 22, a conductive plate 7 facing the cooling member 12, and the insulating ceramic 6 disposed between the conductive plate 5 and the conductive plate 7. These are integrated in advance using a brazing material or the like.
  • a good electrical and thermal conductor such as copper or aluminum can be used.
  • a ceramic that is an electrically insulating material and is a good conductor of heat such as silicon nitride, aluminum nitride, or alumina, can be used.
  • the conductive plate 7 of the insulating substrate 13 and the thermal stress absorbing member 1 of the cooling member 12 are bonded via a bonding material 23.
  • the bonding material 23 for example, a low-temperature sintered material of silver nanoparticles, a silver paste material, a liquid phase diffusion bonding material such as Cu-Sn or Ag-Sn, or a bonding material that is a good conductor of heat, such as solder, is used. be able to.
  • the yield stress (or proof stress) of the bonding material 23 needs to be larger than that of the thermal stress absorbing member 1 in the temperature range to be used.
  • the yield stress of the solder material is also a point to be noted, and for example, high-strength solder such as Sn—Cu—Sb is preferable.
  • the conducting plate 7 and the thermal stress absorbing member 1 may be joined by direct joining such as Cu solid phase diffusion joining or ultrasonic joining without using the joining material 23.
  • the thermal resistance from the semiconductor chip 11 which is a thermal heating element to the cooling member 12 is extremely small, and excellent heat transfer properties can be obtained. Further, most of the thermal stress caused by the difference in thermal expansion coefficient between the insulating substrate 13 and the cooling member 12 is absorbed by plastic deformation of the thermal stress absorbing member 1 (pure aluminum plate), and therefore the insulating substrate 13 and the cooling member 12 are cooled. The connection reliability with the member 12 is sufficiently ensured.
  • FIG. 7 is a diagram showing the relationship between the purity and yield strength of aluminum.
  • the vertical axis represents the yield strength (arb. Unit) of aluminum
  • the horizontal axis represents the purity of aluminum.
  • the strength (yield stress) of aluminum having a purity of 99.5% is higher than the strength of the solder material (yield stress) in the case of high-strength solder such as the aforementioned Sn—Cu—Sb.
  • the strength (yield stress) of aluminum having a purity of 99.5% is higher than the strength of the solder material (yield stress) in the case of high-strength solder such as the aforementioned Sn—Cu—Sb.
  • the thermal stress caused by the difference in thermal expansion coefficient between the insulating substrate 13 and the cooling member 12 can be relaxed with a simple structure, the thermal conductivity, workability, reliability, and cost are satisfied. Can be made.
  • a water-cooled type in which a water jacket 21 made of an aluminum alloy and a cooling member 12 are sealed by electron beam welding or FSW (friction stir welding) or the like at the outer peripheral portion of the cooling member 12.
  • FSW frequency stir welding
  • the cooler may be an air-cooled type.
  • the seal between the water jacket 21 and the cooling member 12 is not limited to welding, and it is also possible to seal with a highly elastic material such as an O-ring or a gasket interposed therebetween.
  • the material of the water jacket 21 is not limited to an aluminum alloy, but an aluminum alloy such as ADC12 is suitable, for example. If it is ADC12, it can manufacture using the aluminum die-casting method which is an inexpensive manufacturing method. Further, as described above, welding with the cooling member 12 is possible. Furthermore, since the linear expansion coefficient of the ADC 12 is the same as the linear expansion coefficient of the cooling member 12, no thermal stress is generated at the joint between the water jacket 21 and the cooling member 12.
  • the ADC 12 is lightweight and inexpensive.
  • the number of semiconductor chips 11 mounted on the insulating substrate is one (see FIG. 1).
  • semiconductor chips of the same type or different functions such as a combination of an IGBT and a diode may be used. It may be a case where a plurality of devices are mounted on the same insulating substrate. Various combinations are possible, such as when a plurality of insulating substrates are mounted on the same cooler (see FIG. 4).
  • the material of the semiconductor chip 11 not only Si but also a so-called wide band gap semiconductor such as SiC or GaN, or mixed mounting of them can be used, and there is no particular limitation.
  • the wide band gap semiconductor generally refers to a semiconductor having a forbidden band width of about 2 eV or more, and is represented by a group 3 nitride represented by GaN, a group 2 nitride represented by ZnO, and ZnSe. Group 2 chalcogenides and SiC are known.
  • a SiC chip that can be used at a higher current density than the Si chip and that can reduce the chip area and the overall size of the device has a small chip area. Influence. Therefore, the present invention having good heat spread without disturbing the heat spread is suitable for a semiconductor device mounted with a SiC chip.
  • the semiconductor device includes the insulating substrate 13, the semiconductor chip 11 provided on the insulating substrate 13, and the cooling member 12 bonded to the back surface of the insulating substrate 13 via the bonding material 23. .
  • the insulating substrate 13 includes an insulating ceramic 6 as an insulating plate, and a conductive plate 5 and a conductive plate 7 provided on both surfaces of the insulating ceramic 6.
  • the cooling member 12 is a composite member in which the thermal stress absorbing member 1 made of aluminum and the heat conducting metal member 2 are integrated.
  • the thermal stress absorbing member 1 is disposed on the side to be bonded to the back surface of the insulating substrate 13, and the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23.
  • the thermal stress caused by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the thermal expansion coefficient of the cooling member 12 is reduced by using the thermal stress absorbing member 1 having a simple structure. can do. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
  • a plurality of insulating substrates 13 on which the semiconductor chip 11 is mounted are bonded to the thermal stress absorbing member 1 that is a part of the cooling member 12 via the bonding material 23, so that each insulating substrate Therefore, it is possible to provide a semiconductor device at a lower cost than when the thermal stress absorbing member 1 is provided.
  • the inverter may be configured with high quality and low cost.
  • the thermal stress absorbing member 1 is made of aluminum having a purity of 99.5% or more.
  • the thermal stress generated by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the linear expansion coefficient of the cooling member 12 is caused by plastic deformation of the (pure aluminum material) of the thermal stress absorbing member 1.
  • the yield stress (or proof stress) of the bonding material 23 is determined from the yield stress of the thermal stress absorbing member 1. It is possible to set a large value, and it is possible to ensure sufficient reliability with respect to the temperature cycle while employing relatively inexpensive solder for the bonding material 23.
  • the heat conducting metal member 2 is made of an aluminum alloy having a purity of less than 99.0%.
  • the thermal stress absorbing member 1 and the heat conductive metal member 2 which are pure aluminum, which is desirable from the viewpoint of cost, weight, mechanical strength and corrosion resistance. Furthermore, it is common to use an aluminum alloy (aluminum die-cast) from the viewpoint of light weight, high corrosion resistance, and cost for the water jacket 21, but according to this structure, welding is possible and a seal structure is unnecessary. Therefore, it can be manufactured at low cost. Moreover, the mismatch of a mechanical characteristic can be suppressed by using the same raw material.
  • the semiconductor device includes the water jacket 21 as a jacket member made of an aluminum alloy connected to the heat conducting metal member 2 in the cooling member 12.
  • the cooling member 12 can be fixed and sealed by welding, and a special sealing structure is not required. Therefore, it can be manufactured at low cost. Moreover, the mismatch of a mechanical characteristic can be suppressed by using the same raw material.
  • the method for manufacturing a semiconductor device includes a step of preparing the insulating substrate 13, a step of disposing the semiconductor chip 11 on the insulating substrate 13, a step of forming the cooling member 12, and the insulating substrate. And a step of bonding the thermal stress absorbing member 1 side of the cooling member 12 to the back surface via the bonding material 23.
  • the step of preparing the insulating substrate 13 is a step of preparing the insulating substrate 13 including the insulating ceramic 6 as an insulating plate and the conductive plate 5 and the conductive plate 7 provided on both surfaces of the insulating ceramic 6.
  • the step of forming the cooling member 12 is a step of forming the cooling member 12 which is a composite member by integrating the thermal stress absorbing member 1 and the heat conducting metal member 2 made of aluminum by hot rolling. is there.
  • the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23.
  • the thermal stress caused by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the thermal expansion coefficient of the cooling member 12 is reduced by using the thermal stress absorbing member 1 having a simple structure. can do. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
  • FIG. 8 is a cross-sectional view showing the structure of the semiconductor device according to this embodiment.
  • DBC substrate direct bonded copper substrate, copper-clad substrate
  • the conductive plate 5a and the conductive plate 7a of the insulating substrate 13a are formed of copper or a copper alloy, as shown in FIG.
  • the linear expansion coefficient adjusting layer 31 is preferably formed from the same copper or copper alloy as the conductive plates (conductive plate 5a and conductive plate 7a) of the DBC substrate. Moreover, as the formation method, the method of joining by integrating the thermal stress absorption member 1 side of the cooling member 12 and the copper plate (linear expansion coefficient adjusting layer 31) by brazing or the like may be used. A method of forming the linear expansion coefficient adjustment layer 31 as a copper film on the thermal stress absorbing member 1 side of the member 12 by a cold spray method or a thermal spraying method may be used. In particular, the cold spray method is preferable because it is relatively inexpensive and can form a thick copper film over a large area.
  • the linear expansion coefficient adjusting layer 31 is bonded to the back surface of the insulating substrate 13a through the bonding material 23.
  • both the upper and lower surfaces of the bonding material 23 are members made of the same material, the thermal stress applied to the bonding material 23 is equalized, and the bonding reliability between the insulating substrate 13a and the cooling member 12 is ensured.
  • the property is further improved. In particular, when the bonding material 23 is solder, the effect is remarkable.
  • FIG. 9 is a cross-sectional view showing another example of the structure of the semiconductor device according to this embodiment.
  • the conductive plate 5 b of the insulating substrate 13 b is composed of a copper plate 51 and an aluminum plate 52.
  • the conductive plate 7 b of the insulating substrate 13 b is composed of an aluminum plate 72 and a copper plate 71.
  • the copper plate 51 and the copper plate 71 are made of copper or a copper alloy.
  • Aluminum plate 52 and aluminum plate 72 are made of aluminum or an aluminum alloy.
  • the thermal stress is absorbed.
  • the linear expansion coefficient adjusting layer 31 integrally formed on the member 1 the same effect as described above can be obtained.
  • the aluminum plate 72 (and also the aluminum plate 52) is pure aluminum having a purity of at least 99.5% or more, preferably 99.9% or more, the thermal stress of the insulating ceramic main cause of the insulating substrate 13b is relieved. Therefore, the bonding reliability between the insulating substrate 13b and the cooling member 12 is further improved.
  • the copper plate 71 which is a part which contacts the joining material 23 of the conducting plate 7a or the conducting plate 7b is made of copper or a copper alloy.
  • the semiconductor device includes a linear expansion coefficient adjustment layer 31 made of copper or a copper alloy bonded to the back surface of the insulating substrate via the bonding material 23.
  • the cooling member 12 is further joined to the linear expansion coefficient adjustment layer 31.
  • the linear expansion coefficient adjusting layer 31 made of a copper alloy is bonded to the back surface of the insulating substrate via the bonding material 23, so that the thermal stress is equalized on the members on both sides of the bonding material 23, and the insulating substrate and the cooling layer are cooled.
  • the joint reliability with the member 12 is improved.
  • the bonding material 23 is made of solder, the effect is remarkable.
  • the conductive plate 5b and the conductive plate 7b are constituted by a laminated structure of copper or a copper alloy and aluminum or an aluminum alloy.
  • the conducting plate when a laminated structure in which copper having high thermal conductivity and aluminum that is easily plastically deformed is used as the conducting plate, a portion of the conducting plate (copper plate 71) that contacts the bonding material 23 is used.
  • the thermal expansion is equalized on the members on both sides of the bonding material 23 by bonding the linear expansion coefficient adjustment layer 31 made of the same copper or copper alloy to the back surface of the insulating substrate 13b via the bonding material 23. Further, the bonding reliability between the insulating substrate 13b and the cooling member 12 is improved. In particular, when the bonding material 23 is made of solder, the effect is remarkable.
  • the conductive plate 5b and the conductive plate 7b include a layer made of aluminum having a purity of 99.5% or more.
  • the thermal stress due to the insulating ceramic 6 of the insulating substrate 13b is relieved, so that the bonding reliability between the insulating substrate 13b and the cooling member 12 is improved.
  • the method for manufacturing a semiconductor device includes a step of preparing an insulating substrate, a step of disposing the semiconductor chip 11 on the insulating substrate, a step of forming the cooling member 12, and a linear expansion coefficient adjustment.
  • the step of forming the layer 31 and the step of bonding the linear expansion coefficient adjusting layer 31 to the back surface of the insulating substrate via the bonding material 23 are provided.
  • the step of preparing an insulating substrate is a step of preparing an insulating substrate including an insulating ceramic 6 as an insulating plate and a conductive plate provided on both surfaces of the insulating ceramic 6.
  • the step of forming the cooling member 12 is a step of forming the cooling member 12 which is a composite member from the thermal stress absorbing member 1 and the heat conductive metal member 2 made of aluminum.
  • the step of forming the linear expansion coefficient adjustment layer 31 is a step of forming the linear expansion coefficient adjustment layer 31 made of copper or a copper alloy on the thermal stress absorbing member 1 side of the cooling member 12 using a cold spray method. It is.
  • the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23, and at least a portion of the conductive plate 7a or the conductive plate 7b that contacts the bonding material 23 is made of copper or a copper alloy.
  • the linear expansion coefficient adjusting layer 31 made of a copper alloy is bonded to the back surface of the insulating substrate via the bonding material 23, so that the thermal stress is equalized on the members on both sides of the bonding material 23, and the insulating substrate and the cooling layer are cooled.
  • the joint reliability with the member 12 is improved.
  • the cold spray method for forming the linear expansion coefficient adjustment layer 31 is a method of forming the linear expansion coefficient adjustment layer 31 as a copper film, and is preferable because a thick copper film can be formed over a large area at a relatively low cost.
  • thermal stress absorbing member 1 thermal stress absorbing member, 2 heat conducting metal member, 5, 5a, 5b, 7, 7a, 7b conductive plate, 6 insulating ceramics, 8 epoxy resin, 9 lead frame, 11 semiconductor chip, 12 cooling member, 13, 13a, 13b insulating substrate, 21 water jacket, 22 die bond material, 23, 24 bonding material, 31 linear expansion coefficient adjustment layer, 51, 71 copper plate, 52, 72 aluminum plate, 101, 102 thickness.

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