CN107204317B - 电力用半导体模块 - Google Patents

电力用半导体模块 Download PDF

Info

Publication number
CN107204317B
CN107204317B CN201710111257.8A CN201710111257A CN107204317B CN 107204317 B CN107204317 B CN 107204317B CN 201710111257 A CN201710111257 A CN 201710111257A CN 107204317 B CN107204317 B CN 107204317B
Authority
CN
China
Prior art keywords
solder
semiconductor element
lead terminal
power semiconductor
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710111257.8A
Other languages
English (en)
Other versions
CN107204317A (zh
Inventor
稻叶祐树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of CN107204317A publication Critical patent/CN107204317A/zh
Application granted granted Critical
Publication of CN107204317B publication Critical patent/CN107204317B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04034—Bonding areas specifically adapted for strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37012—Cross-sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/37298—Fillers
    • H01L2224/37399—Coating material
    • H01L2224/374—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/37298—Fillers
    • H01L2224/37399—Coating material
    • H01L2224/374—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/37298—Fillers
    • H01L2224/37399—Coating material
    • H01L2224/374—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/37298—Fillers
    • H01L2224/37399—Coating material
    • H01L2224/374—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37463—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/37464—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/37664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/40227—Connecting the strap to a bond pad of the item
    • H01L2224/40229—Connecting the strap to a bond pad of the item the bond pad protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/404—Connecting portions
    • H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
    • H01L2224/40499—Material of the auxiliary connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84399—Material
    • H01L2224/844—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/84401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/84411—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

本发明在利用焊料将引线端子接合至半导体元件的一个面的电力用半导体模块中，提高半导体元件的表面电极的可靠性。将引线端子(15)与半导体元件(14)进行接合的引线端子下焊料(18)的0.2％耐力低于将半导体元件(14)与绝缘基板(13)进行接合的半导体元件下焊料(17)的0.2％耐力。因此，虽然半导体元件(14)会因通电产生自热使引线端子(15)延伸，并经由引线端子下焊料(18)对半导体元件(14)施加应力，但会减轻0.2％耐力较低的引线端子下焊料(18)对半导体元件(14)施加的应力。由此，可提高与引线端子下焊料(18)接合的半导体元件(14)的表面电极的可靠性。

Description

电力用半导体模块
技术领域
本发明涉及一种使用了电力用半导体元件控制大电流、高电压的电力用半导体元件的电力用半导体模块。
背景技术
电力用半导体模块含有多个电力用半导体元件，例如可用作逆变器装置的功率转换元件。作为电力用半导体元件，可列举MOSFET(Metal Oxide Semiconductor FieldEffect Transistor，金属氧化物半导体场效应晶体管)、IGBT(Insulated Gate BipolarTransistor，绝缘栅双极晶体管)以及FWD(Free Wheeling Diode，续流二极管)等。此外，作为电力用半导体元件，可列举将IGBT与FWD形成一体的RC(Reverse Conducting，反向导通)-IGBT、对于反向偏压也具有充分耐压性的RB(Reverse Blocking，反向阻断)-IGBT等。
这种电力用半导体模块中，半导体元件利用焊料将其背面的电极与绝缘基板进行接合，并利用焊料将正面的流过主电流的电极与布线用的导体进行接合。此处，众所周知用于半导体元件的背面的焊料和用于正面的焊料使用不同物性的焊料(例如参照专利文献1、2)。
专利文献1的半导体装置的目的在于，实现耐热性和热疲劳性优异的接合部。为了实现此目的，作为用来将半导体元件与绝缘基板的导体进行接合的糊料，使用了“Sn(锡)3.5Ag(银)0.5Cu(铜)(熔融温度：220℃)”。此外，作为将布线用导体与半导体元件进行接合的乳剂焊料，使用了“Sn20Ag5Cu(固相线的温度：220℃、液相线的温度：345℃)”。此外，也考虑到向半导体元件的表面侧的散热，与半导体元件接合的布线用导体中，与半导体元件接合的部分由通过壁厚增加了与半导体元件的接合面积的铜材构成，布线部从其上端向半导体元件的面方向延伸。
专利文献2公开了一种利用两个导体构件包夹半导体元件的装置，在焊料回流时位于半导体元件的下侧的焊料的凝固点低于位于半导体元件的上侧的焊料的凝固点。
现有技术文献
专利文献
专利文献1：日本专利特开2006-287064号公报
专利文献2：日本专利第4730181号公报
发明内容
发明所要解决的技术问题
用于电力用半导体模块的半导体元件的芯片实现了薄型化，利用硅基板出现了厚度为100微米(μm)以下的芯片。此外，半导体元件构成为，分别利用焊料将作为其支承体的绝缘基板以及布线用导体的引线端子进行接合。并且，利用例如环氧树脂将如此构成的半导体元件、绝缘基板以及引线端子进行密封。
引线端子因半导体元件的发热而出现热膨胀。此时，由于引线端子因树脂的密封而被按入，所以其会向厚度较薄的半导体元件膨胀。因此，半导体元件受到来自引线端子的较大应力，有时会因此导致半导体元件的表面电极出现裂纹，甚至发生破损。
本发明鉴于上述问题开发而成，其目的在于，提供一种电力用半导体模块，利用焊料将半导体元件的背面接合至绝缘基板，并利用焊料将引线端子接合至半导体元件的正面，提高半导体元件的表面电极的可靠性。
解决技术问题所采用的技术方案
根据本发明的一个观点，提供一种电力用半导体模块，包括：半导体元件，该半导体元件具有一个面以及位于所述一个面的相反侧的另一面；引线端子，该引线端子被电连接和热连接至所述半导体元件；第1焊料，该第1焊料将所述引线端子与所述半导体元件的一个面进行接合；绝缘基板，该绝缘基板具有绝缘板、电路层以及金属箔，该绝缘板具有一个面以及位于所述一个面的相反侧的另一面，该电路层配置在所述绝缘板的一个面上，该金属箔配置在所述绝缘板的另一面上；第2焊料，该第2焊料将所述半导体元件的另一面与所述绝缘基板的所述电路层进行接合；以及树脂，该树脂至少将所述半导体元件、所述引线端子、所述第1焊料以及所述绝缘基板进行密封。。该电力用半导体模块中，将所述第1焊料的0.2％耐力设为A，所述第2焊料的0.2％耐力设为B时，满足A＜B的关系。
发明效果
所上述结构的电力用半导体模块中，通过降低从引线端子直接接受应力的一侧的第1焊料的0.2％耐力，施加至半导体元件的表面电极的应力会因第1焊料而降低。因此，具有能够提高半导体元件的表面电极的可靠性的效果。
附图说明
图1是表示第1实施方式所涉及的电力用半导体模块的一例的图。
图2是表示半导体元件的一例的图，图2(A)是作为半导体元件的RC-IGBT的电路图，图2(B)是作为半导体元件的RC-IGBT的平面图。
图3是表示半导体元件与引线端子的接合状态的平面图。
图4是半导体元件与引线端子的接合部的局部放大剖视图。
图5是表示半导体元件的保护环和表面电极附近的局部放大剖视。
图6是表示实施例1、2以及比较例1、2的可靠性试验的结果的图。
图7是表示比较例1的电力用半导体模块到达寿命时半导体元件的状态的局部剖视图。
图8是表示比较例1的电力用半导体模块到达寿命时比较例2的电力用半导体模块发生劣化的中途的经过状态的局部剖视图。
图9是表示比较例1的电力用半导体模块到达寿命时实施例1、2的电力用半导体模块的状态的局部剖视图。
图10是表示第2实施方式所涉及的电力用半导体模块的一例的局部放大剖视图。
具体实施方式
以下参照附图，详细说明本发明的实施例。另外，以下说明中，对于相同或等同的结构要素标注相同的标号，并省略其详细说明。此外，本发明并不限定于下述实施方式，可在不超出其主旨的范围内适当进行变形并实施。
[第1实施方式]
图1是表示第1实施方式所涉及的电力用半导体模块的一例的图。图2是表示半导体元件的一例的图，图2(A)是作为半导体元件的RC-IGBT的电路图，图2(B)是作为半导体元件的RC-IGBT的平面图。图3是表示半导体元件与引线端子的接合状态的平面图。图4是半导体元件与引线端子的接合部的局部放大剖视图。图5是表示半导体元件的保护环和表面电极附近的局部放大剖视图。另外，图1所示的第1实施方式所涉及的电力用半导体模块中，示意性地表示了作为其一例的主要部分截面。
如图1所示，电力用半导体模块10具备绝缘基板13、半导体元件14以及引线端子15。电力用半导体模块10具备冷却器11以及壳体12，该壳体12放置在冷却器11上，并且收容绝缘基板13、半导体元件14以及引线端子15。
冷却器11由导热性优异的例如Al(铝)等构成，其内部设有空洞，在该空洞中具备多个叶片。叶片与叶片之间形成制冷剂的通路。作为此种制冷剂，例如可使用乙二醇水溶液、水等液体介质。作为制冷剂，除了液体介质以外，例如也可使用空气等气体介质。并且还可使用如氟利昂等通过利用冷却器11使其蒸发并气化来进行冷却的可相变的制冷剂。
绝缘基板13可采用DCB(Direct Copper Bonding，铜直接键合)基板。也就是说，绝缘基板13由陶瓷绝缘板13a、形成在该陶瓷绝缘板13a的正面(上表面)上的电路层13b、13c以及形成在陶瓷绝缘板13a的背面(下表面)的金属箔13d构成。金属箔13d通过绝缘基板下焊料16与冷却器11接合。电路层13b通过半导体元件下焊料17与半导体元件14的下表面接合。由于陶瓷绝缘板13a具有绝缘性，所以在电路层13b与金属箔13d之间不导电。绝缘基板13与冷却器11还可利用金属箔13d与冷却器11之间的油脂进行热连接，替代利用焊料进行接合。
绝缘基板下焊料16将绝缘基板13与冷却器11热连接并且机械连接。为获得高可靠性，此种绝缘基板下焊料16期望为高强度焊料，例如使用Sn-Sb(锑)类、Sn-Sb-Ag类。
本实施方式中，半导体元件14采用RC-IGBT。如图2(A)所示，RC-IGBT将IGBT14a与FWD(续流二极管)14b形成一体。也就是说，RC-IGBT具有IGBT14a与FWD14b反向并联连接来构成。IGBT14a的集电极端子与FWD14b的阴极端子连接，构成半导体元件14的背面的表面电极。该半导体元件14的背面的表面电极是通过半导体元件下焊料17与电路层13b接合的电极。
半导体元件下焊料17将半导体元件14与电路层13b电连接并且热连接。为了较牢固地接合半导体元件14与电路层13b，半导体元件下焊料17优选为Sn-Sb类焊料或Sn-Ag-Cu类焊料。
作为Sn-Sb类焊料，优选含有Sb0.1wt％以上15wt％以下，且剩余部分由Sn及不可避免的杂质构成的焊料。Sb的含量小于0.1wt％时，焊料容易产生裂纹，因此很可能无法确保必要的可靠性，超过15wt％时，则焊接的温度会超过300℃，可能会伴随着周边的镍膜出现结晶化而增加故障率。Sb的含量进一步优选为2.8wt％以上15wt％以下的范围。若Sb的含量为2.8wt％以上，则容易提高电力用半导体模块10的可靠性。
作为Sn-Ag-Cu类焊料，优选Ag含量为3.5wt％、Cu含量为0.5wt％，且剩余部分由Sn以及不可避免的杂质构成的焊料。
此外，RC-IGBT的IGBT14a的发射极端子与FWD14b的阳极端子连接，构成半导体元件14的正面的表面电极。如图2(B)所示，RC-IGBT具有将多个IGBT区域14c与多个FWD区域14d以条纹状交互配置的结构。图2(B)中虽未图示，但RC-IGBT具有表面电极，该表面电极与位于多个IGBT区域14c的IGBT14a的发射极端子以及位于多个FWD区域14d的FWD14b的阳极端子连接。半导体元件14的正面还具有与IGBT14a的栅极端子连接的控制用表面电极。半导体元件14还在其中央部及周边部使热敏传感器14e、14f形成一体。
引线端子15的一端通过引线端子下焊料18接合至位于半导体元件14的正面的发射极端子的表面电极。引线端子15的另一端通过引线端子下焊料19接合至绝缘基板13的电路层13c。
引线端子下焊料18将引线端子15的下表面与半导体元件14的表面电极电连接并且热连接。引线端子下焊料18用于半导体元件14的表面电极受到来自引线端子15的较强应力的部位，因此使用与半导体元件下焊料17相比0.2％耐力低的焊料。例如，引线端子下焊料18优选为Sn-Cu类焊料。因此，当引线端子15因热而伸缩，半导体元件14受到来自引线端子15的应力时，引线端子下焊料18发挥作用以吸收该应力。因此，对半导体元件14的正面的表面电极施加的应力降低，能够提高半导体元件14的表面电极的可靠性。作为Sn-Cu类焊料，优选Cu含量为0.1wt％以上1.0wt％以下，且剩余部分由Sn及不可避免的杂质构成的焊料。Cu的含量小于0.1wt％时，焊料容易发生裂纹，因此很可能无法确保必要的可靠性，超过1.0wt％时，焊料的0.2％耐力大于半导体元件14的表面电极的铝，万一发生故障时，很可能发生单元短路。另外，作为引线端子下焊料19，也可使用与半导体元件下焊料17相同的物质。另外，0.2％耐力是例如50℃时的数值。
引线端子15适宜使用电阻小且热导率高的材质的金属。具体地说，引线端子15优选为Cu和Al。本实施方式中，使用了热膨胀系数小于Al的Cu。
如图3所示，引线端子15利用引线端子下焊料18接合至半导体元件14，以覆盖位于半导体元件14的至少中央部的热敏传感器14e。
此外，引线端子15通过将带状铜板弯折来制成。如图4所示，引线端子15具有：通过引线端子下焊料18接合的接合部15a；从该接合部15a的端部向图中上方弯折的竖立部15b；以及从该竖立部15b的端部向与半导体元件14的面平行的方向弯折的水平部15c。此处，引线端子15的竖立部15b是因半导体元件14的热量而纵向伸缩，向与引线端子下焊料18及半导体元件14的主面垂直的方向施加应力的部分，因此形成得尽量短。但是，半导体元件14的保护环14g与引线端子15的水平部15c之间的距离H应考虑到使用环境的气压、温度、湿度以及介电常数等，设为不会因低于该电力用半导体模块的规定耐压的电压而发生空间放电的距离。当然，即使在使引线端子15与半导体元件14进行焊料接合的位置，接合部15a及竖立部15b的弯曲部与保护环14g的最短距离d也为不会在其间发生空间放电的距离。
此外，通过模拟可知，引线端子15中接合部15a与竖立部15b的弯折部分相对于引线端子下焊料18及半导体元件14作用在倾斜方向上的应力会增大。当接合部15a及竖立部15b因半导体元件14的发热而在横向及纵向延伸时，接合部15a与竖立部15b连接的弯折部分会向图示的箭头的倾斜方向，对引线端子下焊料18及半导体元件14的表面电极施加应力。引线端子15受到密封树脂20的限制时，该应力会变得明显。考虑到不想增大该应力的限制以及弯曲加工时制造方面的限制，引线端子15的厚度期望为0.5毫米(mm)～1.0mm左右。图示的例子中，引线端子15被配置为接合部15a的主面沿着半导体元件14的正面。接合部15a的主面优选地配置为与半导体元件14的正面大致平行。引线端子15中，接合部15a与竖立部15b所成的角α即它们之间的夹角α例如约为90°，可从10°～180°的范围中选择。α小于10°时，难以高精度地弯折引线端子，超过180°时，会发生空间放电。
收纳在壳体12内的要素中，至少利用密封树脂20将引线端子15、引线端子下焊料18、半导体元件14、半导体元件下焊料17、电路层13b以及陶瓷绝缘板13a进行密封。如果利用密封树脂20将引线端子15等进行密封，则电力用半导体模块10可不具备壳体12。
密封树脂20优选为具有规定的绝缘性能且成型性优异的树脂，适宜使用环氧树脂、马来酰亚胺树脂等。此外，作为密封树脂20也可使用聚酰亚胺树脂、异氰酸酯树脂、氨基树脂、酚醛树脂和硅类树脂、或者其他热固化性树脂。密封树脂20还可含有无机填料等添加物。密封树脂20还具有能够缩短因该介电常数而在保护环14g与引线端子15之间发生空间放电的距离的功能。例如，假设在放电条件较差的海拔4500米的高地使用的耐压为1200伏特(V)的半导体元件14时，半导体元件14的保护环14g与引线端子15的水平部15c之间的距离H可为1.1mm左右。
半导体元件14中，如图5所示，保护环14g的正面由有机类膜覆盖，表面电极由三层金属形成。保护环14g上的膜为聚酰亚胺21，表面电极的金属从下向上依次为Al、Ni(镍)、Au(金)。各金属层的厚度例如Al为2μm～6μm、Ni为3μm～6μm、Au为0.02μm～0.1μm。聚酰亚胺(第1聚酰亚胺)21与三层金属之间填充有其他聚酰亚胺(第2聚酰亚胺)22。该第2聚酰亚胺22是用来对聚酰亚胺21与三层金属之间因制造工艺方面的原因而不可避免产生的微少间隙进行填埋的物质。因此，能够防止由于引线端子下焊料18流入该间隙，并因热产生伸缩，从而导致三层金属发生剥离。
此外，电力用半导体模块10在回流炉中以300℃以下的温度将绝缘基板下焊料16、半导体元件下焊料17以及引线端子下焊料18、19熔融，实施焊料接合。回流炉的温度优选为260℃左右。这是为了防止使焊料熔融温度(熔点)为构成半导体元件14的表面电极的Ni从无定形态变质为结晶状态的结晶化温度以下，Ni变硬变脆。因此，即使导体元件14的表面电极受到来自引线端子15的应力，也能够降低因Ni产生裂纹而导致的电力用半导体模块10的故障率。
另外，此种电力用半导体模块10中，半导体元件14及引线端子15并不限定为一组，也可以设置多组。并联配置多个半导体元件14时，能够增加电力用半导体模块10的额定输出。此外，串联配置两个半导体元件14时，能够构成半桥逆变器电路的电力用半导体模块10。并且，在配置多个半导体元件14时，还能够根据需要设置不同种类的半导体元件14。
以下，对电力用半导体模块10的半导体元件下焊料17及引线端子下焊料18的实施例进行说明。另外，半导体元件14使用了在硅基板上形成RC-IGBT的物质。硅基板的厚度约为60μm以上120μm以下，优选地约为80μm。此外，回流炉的温度设为表面电极的Ni不会结晶化的260℃。并且，在动力循环试验中，通过将半导体元件14因通电而产生的自热(175℃)和因断电而产生的冷却动作重复规定次数后，切断试料，观测劣化的进行情况。
[实施例1]
引线端子下焊料18为Sn0.7Cu，也就是说以Sn为主成分，并按照0.7wt％的比例添加了Cu。半导体元件下焊料17为Sn5Sb，也就是说以Sn为主成分，并按照5wt％的比例添加了Sb。此时，Sn0.7Cu的0.2％耐力在50℃时为18.5兆帕(MPa)，Sn5Sb的0.2％耐力在50℃时为24.8MPa。因此，将引线端子下焊料18的0.2％耐力设为“A”且将半导体元件下焊料17的0.2％耐力设为“B”时，满足A＜B的关系。
[实施例2]
引线端子下焊料18为Sn0.7Cu，也就是说以Sn为主成分，并按照0.7wt％的比例添加了Cu。半导体元件下焊料17为Sn3.5Ag0.5Cu，也就是说以Sn为主成分，按照3.5wt％的比例添加了Ag，按照0.5wt％的比例添加了Cu。此时，Sn0.7Cu的0.2％耐力在50℃时为18.5MPa，Sn3.5Ag0.5Cu的0.2％耐力在50℃时为20.0MPa。因此，将引线端子下焊料18的0.2％耐力设为“A”且将半导体元件下焊料17的0.2％耐力设为“B”时，满足A＜B的关系。
[比较例1]
引线端子下焊料18为Sn3.5Ag0.5Cu，也就是说以Sn为主成分，按照3.5wt％的比例添加了Ag，按照0.5wt％的比例添加了Cu。半导体元件下焊料17为Sn0.7Cu，也就是说以Sn为主成分，按照0.7wt％的比例添加了Cu。此时，Sn3.5Ag0.5Cu的0.2％耐力在50℃时为20.0MPa，Sn0.7Cu的0.2％耐力在50℃时为18.5MPa。因此，将引线端子下焊料18的0.2％耐力设为“A”且将半导体元件下焊料17的0.2％耐力设为“B”时，满足A＞B的关系。
[比较例2]
引线端子下焊料18以Sn为主成分，按照0.7wt％的比例添加了Cu，半导体元件下焊料17以Sn为主成分，按照0.7wt％的比例添加了Cu。此时，引线端子下焊料18和半导体元件下焊料17的0.2％耐力在50℃时都为18.5MPa，因此将引线端子下焊料18的0.2％耐力设为“A”且将半导体元件下焊料17的0.2％耐力设为“B”时，满足A＝B的关系。
图6是表示实施例1、2以及比较例1、2的可靠性试验的结果的图。
图6中表示将引线端子下焊料18的0.2％耐力设为“A”且将半导体元件下焊料17的0.2％耐力设为“B”时，“A”与“B”的大小关系与使半导体元件的温度重复变化时的寿命的关系。
也就是说，满足A＞B的关系的比较例1中，电力用半导体模块10在动力循环试验实施100000(100kcyc.)次时，到达了使用寿命。满足A＝B的关系的比较例2中，电力用半导体模块10在使动力循环试验实施200000(200kcyc.)次时，到达了使用寿命。相对于此，满足A＜B的关系的实施例1、2中，即使电力用半导体模块10使电力循环试验实施1000000(1000kcyc.)次以上时，仍未达到使用寿命。
图7是表示比较例1的电力用半导体模块到达寿命时半导体元件的状态的局部剖视图。
该图7中表示比较例1的电力用半导体模块10到达寿命时会出现何种损坏，尤其示出了引线端子15的接合部15a竖立弯折部分(图中左端)附近的状态。引线端子15的弯折部分是对引线端子下焊料18及半导体元件14施加较大应力的部分，在该弯折部分的正下方产生了若干个局部劣化部25。由于引线端子下焊料18重复受到来自引线端子15的应力而在半导体元件14的表面电极的Al产生裂纹，损伤构成Al正下方的RC-IGBT的晶体管的单元，从而产生这些劣化部25。也就是说，如果单元发生短路，则会在该处流动大电流，该通道的引线端子下焊料18及半导体元件14会因瞬间高温而熔化并形成孔，形成劣化部25。但是，即使实施动力循环试验100000(100kcyc.)次后，除了引线端子15的弯折部分的正下方以外的部分并未发现明显变化。
图8是表示比较例1的电力用半导体模块到达寿命的时期中比较例2的电力用半导体模块为发生劣化的中途的经过状态的局部剖视图。
在将引线端子下焊料18的0.2％耐力设为与半导体元件下焊料17的0.2％耐力相同的比较例2中，经过相当于寿命一半的动力循环试验时的劣化状态与比较例1的情况大不相同。也就是说，以密封树脂20、引线端子15以及引线端子下焊料18相交的部位附近为裂纹起点26，裂纹27进入了引线端子下焊料18。通过该裂纹27，从半导体元件14经由引线端子下焊料18流入引线端子15的电流流路部分导通。也就是说，电力用半导体模块10中裂纹27进入引线端子下焊料18，并且该裂纹27向产生故障的方向发展。这与比较例1中因电力用半导体模块10的瞬间短路而发生的故障不同，此处裂纹27的发展缓慢，但仍会切实地发展成故障。
图9是表示比较例1的电力用半导体模块到达寿命时实施例1、2的电力用半导体模块的状态的局部剖视图。
根据在实施与比较例1、2相同的动力循环次数后得到的实施例1、2的电力用半导体模块10的试料，引线端子下焊料18上未发现裂纹或劣化等现象。因此，引线端子下焊料18的0.2％耐力低于半导体元件下焊料17的0.2％耐力时，引线端子下焊料18未发现劣化，电力用半导体模块10的可靠性得到了改善。在引线端子15具有接合部15a与竖立部15b连接的弯折部分的电力用半导体模块10中，此种引线端子下焊料18与半导体元件下焊料17的组合是有用的。引线端子15受到环氧树脂等密封树脂20的限制时，会更有用。
另外，本实施例1、2的电力用半导体模块10中仍发生故障时，考虑是由于引线端子下焊料18的裂纹进一步发展的原因。因此，这样的现象通过对引线端子下焊料18的电阻值的变化进行定期监控，能够预测寿命。此外，实施例1、2的电力用半导体模块10在实施100000(100kcyc.)次左右的动力循环试验后仍未发现引线端子下焊料18的劣化，因此可知，尤其对于使用厚度为100μm以下的较薄的半导体元件14的装置有用。
[第2实施方式]
图10是表示第2实施方式所涉及的电力用半导体模块的一例的局部放大剖视图。该图10中，对于与第1实施方式的对应的结构要素相同或等同的结构要素标注相同的标号，并省略其详细说明。
第2实施方式中，使用电力用半导体模块10的引线端子15替换了第1实施方式的引线端子。也就是说，引线端子15的正面利用导电性材料实施了覆盖处理，形成覆盖层30。覆盖层30的材料可使用Ni、Ag、Au、Pd(钯)等异种金属，本实施方式中使用了Ni，并且覆盖层30的厚度为10μm以下。
若考虑到量产性，则覆盖层30的形成方法优选采用镀覆，可使用无电解镀覆、电解镀覆等。为了避免使Ni的结晶化温度低至回流炉的温度(260℃)以下，作为无电解镀Ni中含有的磷浓度，优选为50％以下，更优选为20％以下。
通过利用镀Ni来对引线端子15的表面实施覆盖处理，即使被施加由动力循环试验产生的热应力，也能够阻止构成引线端子15的Cu元素向引线端子下焊料18扩散的现象。因此，虽然引线端子下焊料18使用了Sn0.7Cu，但能防止构成引线端子15的Cu发生扩散，从初始的物性发生改变。
也就是说，引线端子下焊料18的主成分的Sn，众所周知在增加添入其中的Cu时焊料强度会增加。其结果是，引线端子下焊料18相对于相同的变形量部分进入塑性形变区域，可以推测由于该变形的累计使半导体元件14发生了变形。
相对于此，第2实施方式中，覆盖层30作为扩散屏障发挥作用，不会发生Cu向引线端子下焊料18扩散的现象，因此对半导体元件14施加的应力实质上不随时间变化。
顺带一提，使用未形成覆盖层30的引线端子15并使动力循环试验实施450000(450kcyc.)次后，发现较薄的半导体元件14出现波动起伏般的变形的现象。这被认为是由于在引线端子下焊料18中，确认有电流密度越大的区域Cu的扩散越大，引线端子下焊料18的焊料强度并不均匀，伸缩也不均匀。
因此，第2实施方式的电力用半导体模块10除了第1实施方式的电力用半导体模块10具有的效果以外，还由于引线端子下焊料18不会固化而具有对半导体元件14的表面电极的保护效果。
以上实施方式中，使用Sn5Sb或Sn3.5Ag0.5Cu作为半导体元件下焊料17，但只要是其0.2％耐力高于引线端子下焊料18，则不限定于此。例如，作为半导体元件下焊料17，可列举Sn8Sb3Ag等。此外，与电力用半导体模块10利用焊料16将绝缘基板13与冷却器11进行直接接合时同样地，在绝缘基板13与冷却器11之间夹入油脂进行连接时也产生效果。
标号说明
10 电力用半导体模块
11 冷却器
12 壳体
13 绝缘基板
13a 陶瓷绝缘板
13b、13c 电路层
13d 金属箔
14 半导体元件
14a IGBT
14b FWD
14c IGBT区域
14d FWD区域
14e、14f 热敏传感器
14g 保护环
15 引线端子
15a 接合部
15b 竖立部
15c 水平部
16 绝缘基板下焊料
17 半导体元件下焊料
18、19 引线端子下焊料
20 密封树脂
21 聚酰亚胺(第1聚酰亚胺)
22 聚酰亚胺(第2聚酰亚胺)
25 劣化部
26 裂纹起点
27 裂纹
30 覆盖层

Claims (17)

1.一种电力用半导体模块，其特征在于，包括：
半导体元件，该半导体元件具有一个面以及位于所述一个面的相反侧的另一面；
引线端子，该引线端子被电连接和热连接至所述半导体元件；
第1焊料，该第1焊料将所述引线端子与所述半导体元件的一个面进行接合；
绝缘基板，该绝缘基板具有绝缘板、电路层以及金属箔，该绝缘板具有一个面以及位于所述一个面的相反侧的另一面，该电路层配置在所述绝缘板的一个面上，该金属箔配置在所述绝缘板的另一面上；
第2焊料，该第2焊料将所述半导体元件的另一面与所述绝缘基板的所述电路层进行接合；以及
树脂，该树脂至少将所述半导体元件、所述引线端子、所述第1焊料以及所述绝缘基板进行密封，
所述引线端子具有：通过所述第1焊料来接合的接合部；从所述接合部的端部向上方弯折的竖立部；以及从所述竖立部的端部向与所述半导体元件的面平行的方向弯折的水平部，
在将所述第1焊料的0.2％耐力设为A、将所述第2焊料的0.2％耐力设为B时，满足A＜B的关系。
2.如权利要求1所述的电力用半导体模块，其特征在于，所述半导体元件的厚度为100微米以下。
3.如权利要求1所述的电力用半导体模块，其特征在于，所述半导体元件具备通过所述第1焊料与所述引线端子接合的表面电极，所述表面电极由铝、镍以及金这三层构成。
4.如权利要求3所述的电力用半导体模块，其特征在于，所述第1焊料及所述第2焊料的熔点低于所述镍的结晶化温度。
5.如权利要求3所述的电力用半导体模块，其特征在于，所述半导体元件的保护环的表面由第1聚酰亚胺膜所覆盖，所述第1聚酰亚胺与所述表面电极的间隙由第2聚酰亚胺所填充。
6.如权利要求1所述的电力用半导体模块，其特征在于，所述引线端子的表面由异种金属所覆盖。
7.如权利要求6所述的电力用半导体模块，其特征在于，所述覆盖的方法为镀覆。
8.如权利要求6所述的电力用半导体模块，其特征在于，所述引线端子的覆盖厚度为10微米以下。
9.如权利要求6所述的电力用半导体模块，其特征在于，所述引线端子的覆盖材料为镍。
10.如权利要求9所述的电力用半导体模块，其特征在于，所述镍中所含的磷浓度为50％以下。
11.如权利要求9所述的电力用半导体模块，其特征在于，所述镍中所含的磷浓度为20％以下。
12.如权利要求1所述的电力用半导体模块，其特征在于，所述引线端子的材料为铜。
13.如权利要求12所述的电力用半导体模块，其特征在于，所述引线端子的厚度为0.5～1.0毫米。
14.如权利要求1所述的电力用半导体模块，其特征在于，所述第1焊料以锡为主成分，并且含有铜的比例为0.1wt％以上1.0wt％以下。
15.如权利要求14所述的电力用半导体模块，其特征在于，所述第2焊料以锡为主成分，并且含有锑的比例为0.1wt％以上15wt％以下。
16.如权利要求14所述的电力用半导体模块，其特征在于，所述第2焊料以锡为主成分，并且含有银的比例为3.5wt％，含有铜的比例为0.5wt％。
17.如权利要求1所述的电力用半导体模块，其特征在于，所述半导体元件为RC-IGBT。
CN201710111257.8A 2016-03-18 2017-02-28 电力用半导体模块 Active CN107204317B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016055485A JP6750263B2 (ja) 2016-03-18 2016-03-18 電力用半導体モジュール
JP2016-055485 2016-03-18

Publications (2)

Publication Number Publication Date
CN107204317A CN107204317A (zh) 2017-09-26
CN107204317B true CN107204317B (zh) 2022-03-01

Family

ID=59751981

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710111257.8A Active CN107204317B (zh) 2016-03-18 2017-02-28 电力用半导体模块

Country Status (4)

Country Link
US (1) US9881879B2 (zh)
JP (1) JP6750263B2 (zh)
CN (1) CN107204317B (zh)
DE (1) DE102017203024B4 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6269573B2 (ja) 2015-05-18 2018-01-31 株式会社デンソー 半導体装置
JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
JP2019140285A (ja) * 2018-02-13 2019-08-22 トヨタ自動車株式会社 半導体モジュール
CN108364940B (zh) * 2018-02-24 2020-07-07 江西源能电气技术有限公司 一种电力用逆变电路装置
JP7106981B2 (ja) * 2018-05-18 2022-07-27 富士電機株式会社 逆導通型半導体装置
US11688722B2 (en) 2018-09-20 2023-06-27 Fuji Electric Co., Ltd. Semiconductor device
WO2020059285A1 (ja) * 2018-09-20 2020-03-26 富士電機株式会社 半導体装置
EP3832705A4 (en) * 2018-11-30 2021-09-15 Hitachi Metals, Ltd. ELECTRICAL CONNECTION ELEMENT, ELECTRICAL CONNECTION STRUCTURE AND ELECTRICAL CONNECTION ELEMENT PRODUCTION PROCESS
DE112020001005T5 (de) * 2019-10-15 2021-11-11 Fuji Electric Co., Ltd. Halbleitermodul
DE102021214247A1 (de) * 2021-12-13 2023-06-15 Robert Bosch Gesellschaft mit beschränkter Haftung Leistungsmodul mit Hochvolt-Isolierung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101061580A (zh) * 2005-09-15 2007-10-24 三菱麻铁里亚尔株式会社 绝缘电路基板及带冷却槽部的绝缘电路基板
JP2009070863A (ja) * 2007-09-11 2009-04-02 Hitachi Ltd 半導体パワーモジュール
CN201681829U (zh) * 2010-04-07 2010-12-22 袁毅 一种通过镀镍键合铜丝连接的半导体封装件
WO2015029511A1 (ja) * 2013-08-28 2015-03-05 三菱電機株式会社 半導体装置およびその製造方法
CN104756250A (zh) * 2012-11-20 2015-07-01 丰田自动车株式会社 半导体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3627591B2 (ja) 1999-10-07 2005-03-09 富士電機機器制御株式会社 パワー半導体モジュールの製造方法
JP4228926B2 (ja) 2003-10-03 2009-02-25 富士電機デバイステクノロジー株式会社 半導体装置
JP4499577B2 (ja) 2005-01-19 2010-07-07 三菱電機株式会社 半導体装置
JP2006287064A (ja) 2005-04-01 2006-10-19 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
JP4479577B2 (ja) * 2005-04-28 2010-06-09 株式会社日立製作所 半導体装置
JP4730181B2 (ja) 2006-04-10 2011-07-20 株式会社デンソー 半導体装置
DE102009045181B4 (de) * 2009-09-30 2020-07-09 Infineon Technologies Ag Leistungshalbleitermodul
JP5367752B2 (ja) * 2010-06-11 2013-12-11 古河電気工業株式会社 半田メッキ線の製造方法及び製造装置
JP5857464B2 (ja) 2011-06-16 2016-02-10 富士電機株式会社 パワー半導体モジュールおよびその製造方法
JP5808295B2 (ja) * 2012-06-07 2015-11-10 株式会社豊田中央研究所 モジュール
JP5686128B2 (ja) * 2012-11-29 2015-03-18 トヨタ自動車株式会社 半導体装置
JP6488917B2 (ja) * 2014-07-04 2019-03-27 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101061580A (zh) * 2005-09-15 2007-10-24 三菱麻铁里亚尔株式会社 绝缘电路基板及带冷却槽部的绝缘电路基板
JP2009070863A (ja) * 2007-09-11 2009-04-02 Hitachi Ltd 半導体パワーモジュール
CN201681829U (zh) * 2010-04-07 2010-12-22 袁毅 一种通过镀镍键合铜丝连接的半导体封装件
CN104756250A (zh) * 2012-11-20 2015-07-01 丰田自动车株式会社 半导体装置
WO2015029511A1 (ja) * 2013-08-28 2015-03-05 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP6750263B2 (ja) 2020-09-02
US20170271275A1 (en) 2017-09-21
CN107204317A (zh) 2017-09-26
JP2017168792A (ja) 2017-09-21
DE102017203024A1 (de) 2017-09-21
US9881879B2 (en) 2018-01-30
DE102017203024B4 (de) 2023-07-06

Similar Documents

Publication Publication Date Title
CN107204317B (zh) 电力用半导体模块
JP6602480B2 (ja) 半導体装置
US20170309544A1 (en) Semiconductor device and method for manufacturing semiconductor device
JP5214936B2 (ja) 半導体装置
US9991220B2 (en) Semiconductor device
JP6429208B2 (ja) 半導体装置および移動体
JP4557804B2 (ja) 半導体装置及びその製造方法
US10283430B2 (en) Power semiconductor device and method for manufacturing same
JP2005340268A (ja) トランジスタパッケージ
US20190157235A1 (en) Semiconductor device
EP3933914A1 (en) Packaging structure, electric vehicle and electronic device
CN111433910B (zh) 半导体装置以及半导体装置的制造方法
US10916491B2 (en) Semiconductor module
JP7183722B2 (ja) 板はんだおよび半導体装置の製造方法
WO2019207996A1 (ja) 半導体装置およびその製造方法
EP2840607A1 (en) Semiconductor module
US20170323801A1 (en) Method of generating a power semiconductor module
JP2006041363A (ja) 樹脂封止型半導体装置
JP2015115349A (ja) 半導体装置
JP2005259918A (ja) 電力変換装置
WO2024029258A1 (ja) 半導体モジュールおよび半導体モジュールの製造方法
JP2011176087A (ja) 半導体モジュール、及び電力変換装置
JP2001358244A (ja) パワー半導体モジュール
CN115552576A (zh) 半导体装置
JP5151837B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant