WO2015029511A1 - Semiconductor device and production method therefor - Google Patents

Semiconductor device and production method therefor Download PDF

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Publication number
WO2015029511A1
WO2015029511A1 PCT/JP2014/063466 JP2014063466W WO2015029511A1 WO 2015029511 A1 WO2015029511 A1 WO 2015029511A1 JP 2014063466 W JP2014063466 W JP 2014063466W WO 2015029511 A1 WO2015029511 A1 WO 2015029511A1
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WIPO (PCT)
Prior art keywords
insulating substrate
aluminum
semiconductor device
stress absorbing
thermal stress
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PCT/JP2014/063466
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French (fr)
Japanese (ja)
Inventor
小林　浩
洋平 大本
真之介 曽田
昌樹 田屋
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三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2015534025A priority Critical patent/JP6199397B2/en
Priority to CN201490000999.3U priority patent/CN205752150U/en
Publication of WO2015029511A1 publication Critical patent/WO2015029511A1/en

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Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device that requires heat dissipation and a method for manufacturing the semiconductor device.
  • a semiconductor device using a semiconductor chip such as an IGBT (Insulated Gate Bipolar Transistor)
  • IGBT Insulated Gate Bipolar Transistor
  • a conductive plate made of a highly thermally conductive insulating ceramic plate such as silicon nitride, aluminum nitride, or alumina, and a highly thermally conductive metal such as aluminum or copper (including the same alloy, hereinafter the same) provided on both surfaces thereof.
  • the semiconductor chip is bonded to one surface of a so-called insulating substrate integrated with solder via a bonding material such as solder, and the cooler is directly or indirectly connected to the other surface of the insulating substrate via a bonding material such as solder.
  • a power module that is joined.
  • thermal stress is generated due to the difference in thermal expansion coefficient between the insulating substrate and the cooler, and a crack is generated in the bonding material that joins the insulating substrate and the cooler. In some cases, sufficient heat dissipation performance could not be maintained during the lifetime.
  • Patent Document 1 a proposal has been made to arrange a stress relaxation member between an insulating substrate and a cooler.
  • the stress relaxation member in Patent Document 1 is made of an aluminum plate having a thickness of 0.3 to 3 mm in which a plurality of through holes are formed. Each through hole of the stress relaxation member is a stress absorbing space.
  • the stress relaxation member is brazed to the insulating substrate and the heat sink.
  • the stress relieving member is deformed by the action of the stress absorbing space, thereby relieving the thermal stress.
  • the semiconductor device including the stress relaxation member having the stress absorption space as in Patent Document 1 has two major problems.
  • the first is a heat transfer problem.
  • the average heat transfer coefficient of the stress relaxation member is lower than the average heat transfer coefficient of the base material. This is because the stress absorption space of the stress relaxation member is air, and its heat transfer coefficient is extremely low, so that, on average, the heat transfer coefficient of the base material is lowered by the volume ratio of the stress absorption space. .
  • the heat flow spreads poorly in the stress relaxation member desirably having a thickness of 1 to 4 mm. This is because the heat flow is disturbed by the stress absorption space.
  • a brazing material having a heat transfer coefficient lower than that of the base material is used for the connection portion between the insulating substrate and the heat sink. However, since the number of the connection portions is large, the overall thermal resistance is increased.
  • the second problem is workability.
  • the stress relaxation member and the insulating substrate cannot be brazed in a state where the semiconductor chip is mounted on the insulating substrate because of the processing temperature. That is, it is necessary to perform die bonding and further wire bonding of the semiconductor chip in the state of the substrate ASSY product (collective component) in which the cooler, the stress relaxation member, and the insulating substrate are integrated.
  • ASSY product collective component
  • the insulating substrate is completely fixed, but it is difficult to obtain sufficient rigidity between the cooler and the stress relaxation member because of its structure. Therefore, for example, in a process that requires pressurization, the insulating substrate or chip is cracked and broken. For example, in a processing process using ultrasonic waves, problems such as non-adherence due to ultrasonic loss occur.
  • the present invention has been made to solve the above-described problems, and an object thereof is to provide a semiconductor device having high heat transfer and excellent workability, and a method for manufacturing the same.
  • a semiconductor device includes an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate, a semiconductor chip provided on the insulating substrate, and a back surface of the insulating substrate.
  • a cooling member joined through a material, and the cooling member is a composite member in which a thermal stress absorbing member made of aluminum and a heat conductive metal member are stacked, and the thermal stress absorbing member is the insulating member It is arrange
  • a semiconductor device includes an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate, a semiconductor chip provided on the insulating substrate, and a back surface of the insulating substrate.
  • the cooling member is a composite member in which a thermal stress absorbing member made of aluminum and a heat conductive metal member are integrated, and the thermal stress absorbing member is formed on the back surface of the insulating substrate. It is arrange
  • a method of manufacturing a semiconductor device includes: (a) preparing an insulating substrate including an insulating plate and conductive plates provided on both surfaces of the insulating plate; and (b) a semiconductor on the insulating substrate.
  • a step of disposing a chip (c) a step of forming a cooling member which is a composite member by integrating a thermal stress absorbing member and a heat conducting metal member made of aluminum by hot rolling, and (d) And a step of bonding the thermal stress absorbing member side of the cooling member to the back surface of the insulating substrate via a bonding material, wherein the yield stress of the thermal stress absorbing member is smaller than the yield stress of the bonding material.
  • a method of manufacturing a semiconductor device includes: (a) preparing an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate; and (b) on the insulating substrate.
  • a step of disposing a semiconductor chip includes: (c) a step of forming a cooling member which is a composite member from a heat stress absorbing member and a heat conductive metal member made of aluminum; and (d) the thermal stress of the cooling member.
  • the thermal stress due to the difference from the thermal expansion coefficient can be relaxed by using the thermal stress absorbing member. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
  • FIG. 1 It is sectional drawing which shows the structure of the semiconductor device regarding embodiment. It is a circuit diagram of a general IGBT module for a three-phase inverter. It is sectional drawing at the time of comprising the semiconductor device regarding embodiment with the module of 1 in 1.
  • FIG. It is a top view at the time of comprising the semiconductor device concerning embodiment with a module of 1 in 1.
  • FIG. It is the figure which showed the temperature cycle number dependence of the crack length of a joining material. It is the figure which showed the relationship between the curvature or the wave
  • FIG. 1 is a cross-sectional view showing the structure of a semiconductor device according to this embodiment.
  • FIG. 2 is a circuit diagram of a general IGBT module for a three-phase inverter.
  • FIG. 3 is a cross-sectional view of the semiconductor device according to the present embodiment configured with a 1 in 1 module, and
  • FIG. 4 shows a top view of the module.
  • a plurality of insulating substrates 13 (six here) mounted with a semiconductor chip 11 (here, an IGBT chip, but no diode is shown) are cooled via a bonding material 23. Joined to the member 12. This module is sealed with an epoxy resin 8. Each module is electrically connected by a lead frame 9 via a bonding material 24.
  • the cooling member 12 is a composite member in which a thermal stress absorbing member 1 composed of pure aluminum having a purity of at least 99.5% or more, desirably 99.9% or more, and a heat conductive metal member 2 such as copper or aluminum are stacked. It is.
  • FIG. 5 is a diagram showing the temperature cycle number dependency of the crack length of the joining member in the thermal cycle test ( ⁇ 40 ° C. to 175 ° C.), that is, the crack length of the joining material.
  • the bonding material 23 is high-strength solder
  • the insulating substrate 13 is DBC.
  • the cooling member 12 is a composite material of an aluminum alloy (alloy name A6063) having a thickness of 6 mm and an aluminum having a thickness of 0.5 mm and a purity of 4N (in the figure, “thermal stress absorbing member 0.5t In the bonding material 23 is not substantially cracked.
  • the cooling member 12 is made of only an aluminum alloy (A6063) having a thickness of 6.5 mm (described as “no thermal stress absorbing member” in the figure), a crack develops in the bonding material 23.
  • the thickness 101 of the thermal stress absorbing member 1 shown in FIG. 1 differs in the optimum value depending on the purity of aluminum because the cost relationship with the effect differs depending on the purity of aluminum.
  • an aluminum alloy having a purity of less than 99.0% for example, an aluminum alloy such as alloy designation A6063 (JIS symbol) is used for the heat conductive metal member 2. preferable.
  • the heat conductive metal member 2 also serves as a structural material.
  • the heat conducting metal member 2 needs to have a certain thickness.
  • the thickness 102 of the heat conductive metal member 2 is preferably about 2 mm or more, and preferably 1 mm or more even in the case of fixed use.
  • the thickness is too thick, the increase in thermal resistance becomes remarkable, so it is desirable to set the thickness to 10 mm or less, preferably 4 mm or less.
  • the thermal stress absorbing member 1 is made of high-purity aluminum, deformation such as wrinkles may be seen in a temperature cycle or the like, and the deformation has a great influence on the heat conductive metal member 2 that also serves as a structural material. It is also important not to give
  • FIG. 6 is a diagram showing the maximum swell or warpage of the cooling member 12 after 1000 cycles of the thermal cycle test ( ⁇ 40 ° C. to 175 ° C.).
  • the bonding material 23 is high-strength solder
  • the insulating substrate 13 is DBC. It can be seen that when the thermal conductive metal member 2 (here, aluminum alloy) is 8 times or more than the thermal stress absorbing member 1 (here, pure aluminum having a purity of 4N), there is almost no warpage or undulation. Further, it can be seen that when the heat conductive metal member 2 (here, an aluminum alloy) is thinner than the thermal stress absorbing member 1 (here, pure aluminum having a purity of 4N), deformation such as undulation or warpage is likely to occur.
  • the thermal stress absorbing member 1 when the thermal stress absorbing member 1 is thicker (when the thickness 102 of the heat conducting metal member 2 is less than 1 times the thickness 101 of the thermal stress absorbing member 1), the mechanical characteristics of the cooling member 12 are Since it is governed by the thermal stress absorbing member 1, the swell or warpage is not a controlled value. Therefore, in the ratio of the thickness 101 of the thermal stress absorbing member 1 and the thickness 102 of the heat conducting metal member 2, it is preferable that the heat conducting metal member 2 is thick at least 1 time or more, desirably 8 times or more.
  • thermal stress absorbing member 1 and the heat conducting metal member 2 made in advance is preferably performed by hot rolling from the viewpoint of stability of bonding strength and cost.
  • a thermal stress absorbing member is formed as an aluminum film on the heat conducting metal member 2 by a cold spray method (a method in which a powder material is collided with a base material in a solid state at a melting temperature or lower to form a film) or a thermal spraying method. It is also possible to form 1.
  • the thermal stress absorbing member 1 made of aluminum is the weakest layer, and gradually cracks due to fatigue failure due to temperature cycling.
  • the joining interface between the heat conductive metal member 2 which is also a structural material and the thermal stress absorbing member 1 is formed of a brazing material or the like, it is not in the base material of the thermal stress absorbing member 1 but at the interface part at once, such as interface peeling. Cracks may develop. Therefore, it is desirable that the heat conductive metal member 2 and the thermal stress absorbing member 1 be joined directly without a joining material.
  • the surface of the thermal stress absorbing member 1 in the cooling member 12 formed in this way may be surface-treated with, for example, Ni plating. Further, in order to increase the heat transfer coefficient of the cooling member 12, it is preferable that the heat conducting metal member 2 has a surface area enlarged by forming fins or grooves.
  • a water jacket 21 for liquid cooling type cooling can be provided below the heat conducting metal member 2.
  • the water jacket 21 is made of, for example, an aluminum alloy and is connected to the heat conducting metal member 2.
  • the semiconductor chip 11 is bonded onto the insulating substrate 13 via the die bonding material 22.
  • the die bond material 22 for example, a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material such as Cu—Sn or Ag—Sn, or a bonding material that is a good electrical and thermal conductor such as solder is used. Can do.
  • the semiconductor chip 11 and the insulating substrate 13 may be bonded by direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding.
  • the insulating substrate 13 includes a conductive plate 5 in contact with the die bond material 22, a conductive plate 7 facing the cooling member 12, and the insulating ceramic 6 disposed between the conductive plate 5 and the conductive plate 7. These are integrated in advance using a brazing material or the like.
  • a good electrical and thermal conductor such as copper or aluminum can be used.
  • a ceramic that is an electrically insulating material and is a good conductor of heat such as silicon nitride, aluminum nitride, or alumina, can be used.
  • the conductive plate 7 of the insulating substrate 13 and the thermal stress absorbing member 1 of the cooling member 12 are bonded via a bonding material 23.
  • the bonding material 23 for example, a low-temperature sintered material of silver nanoparticles, a silver paste material, a liquid phase diffusion bonding material such as Cu-Sn or Ag-Sn, or a bonding material that is a good conductor of heat, such as solder, is used. be able to.
  • the yield stress (or proof stress) of the bonding material 23 needs to be larger than that of the thermal stress absorbing member 1 in the temperature range to be used.
  • the yield stress of the solder material is also a point to be noted, and for example, high-strength solder such as Sn—Cu—Sb is preferable.
  • the conducting plate 7 and the thermal stress absorbing member 1 may be joined by direct joining such as Cu solid phase diffusion joining or ultrasonic joining without using the joining material 23.
  • the thermal resistance from the semiconductor chip 11 which is a thermal heating element to the cooling member 12 is extremely small, and excellent heat transfer properties can be obtained. Further, most of the thermal stress caused by the difference in thermal expansion coefficient between the insulating substrate 13 and the cooling member 12 is absorbed by plastic deformation of the thermal stress absorbing member 1 (pure aluminum plate), and therefore the insulating substrate 13 and the cooling member 12 are cooled. The connection reliability with the member 12 is sufficiently ensured.
  • FIG. 7 is a diagram showing the relationship between the purity and yield strength of aluminum.
  • the vertical axis represents the yield strength (arb. Unit) of aluminum
  • the horizontal axis represents the purity of aluminum.
  • the strength (yield stress) of aluminum having a purity of 99.5% is higher than the strength of the solder material (yield stress) in the case of high-strength solder such as the aforementioned Sn—Cu—Sb.
  • the strength (yield stress) of aluminum having a purity of 99.5% is higher than the strength of the solder material (yield stress) in the case of high-strength solder such as the aforementioned Sn—Cu—Sb.
  • the thermal stress caused by the difference in thermal expansion coefficient between the insulating substrate 13 and the cooling member 12 can be relaxed with a simple structure, the thermal conductivity, workability, reliability, and cost are satisfied. Can be made.
  • a water-cooled type in which a water jacket 21 made of an aluminum alloy and a cooling member 12 are sealed by electron beam welding or FSW (friction stir welding) or the like at the outer peripheral portion of the cooling member 12.
  • FSW frequency stir welding
  • the cooler may be an air-cooled type.
  • the seal between the water jacket 21 and the cooling member 12 is not limited to welding, and it is also possible to seal with a highly elastic material such as an O-ring or a gasket interposed therebetween.
  • the material of the water jacket 21 is not limited to an aluminum alloy, but an aluminum alloy such as ADC12 is suitable, for example. If it is ADC12, it can manufacture using the aluminum die-casting method which is an inexpensive manufacturing method. Further, as described above, welding with the cooling member 12 is possible. Furthermore, since the linear expansion coefficient of the ADC 12 is the same as the linear expansion coefficient of the cooling member 12, no thermal stress is generated at the joint between the water jacket 21 and the cooling member 12.
  • the ADC 12 is lightweight and inexpensive.
  • the number of semiconductor chips 11 mounted on the insulating substrate is one (see FIG. 1).
  • semiconductor chips of the same type or different functions such as a combination of an IGBT and a diode may be used. It may be a case where a plurality of devices are mounted on the same insulating substrate. Various combinations are possible, such as when a plurality of insulating substrates are mounted on the same cooler (see FIG. 4).
  • the material of the semiconductor chip 11 not only Si but also a so-called wide band gap semiconductor such as SiC or GaN, or mixed mounting of them can be used, and there is no particular limitation.
  • the wide band gap semiconductor generally refers to a semiconductor having a forbidden band width of about 2 eV or more, and is represented by a group 3 nitride represented by GaN, a group 2 nitride represented by ZnO, and ZnSe. Group 2 chalcogenides and SiC are known.
  • a SiC chip that can be used at a higher current density than the Si chip and that can reduce the chip area and the overall size of the device has a small chip area. Influence. Therefore, the present invention having good heat spread without disturbing the heat spread is suitable for a semiconductor device mounted with a SiC chip.
  • the semiconductor device includes the insulating substrate 13, the semiconductor chip 11 provided on the insulating substrate 13, and the cooling member 12 bonded to the back surface of the insulating substrate 13 via the bonding material 23. .
  • the insulating substrate 13 includes an insulating ceramic 6 as an insulating plate, and a conductive plate 5 and a conductive plate 7 provided on both surfaces of the insulating ceramic 6.
  • the cooling member 12 is a composite member in which the thermal stress absorbing member 1 made of aluminum and the heat conducting metal member 2 are integrated.
  • the thermal stress absorbing member 1 is disposed on the side to be bonded to the back surface of the insulating substrate 13, and the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23.
  • the thermal stress caused by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the thermal expansion coefficient of the cooling member 12 is reduced by using the thermal stress absorbing member 1 having a simple structure. can do. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
  • a plurality of insulating substrates 13 on which the semiconductor chip 11 is mounted are bonded to the thermal stress absorbing member 1 that is a part of the cooling member 12 via the bonding material 23, so that each insulating substrate Therefore, it is possible to provide a semiconductor device at a lower cost than when the thermal stress absorbing member 1 is provided.
  • the inverter may be configured with high quality and low cost.
  • the thermal stress absorbing member 1 is made of aluminum having a purity of 99.5% or more.
  • the thermal stress generated by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the linear expansion coefficient of the cooling member 12 is caused by plastic deformation of the (pure aluminum material) of the thermal stress absorbing member 1.
  • the yield stress (or proof stress) of the bonding material 23 is determined from the yield stress of the thermal stress absorbing member 1. It is possible to set a large value, and it is possible to ensure sufficient reliability with respect to the temperature cycle while employing relatively inexpensive solder for the bonding material 23.
  • the heat conducting metal member 2 is made of an aluminum alloy having a purity of less than 99.0%.
  • the thermal stress absorbing member 1 and the heat conductive metal member 2 which are pure aluminum, which is desirable from the viewpoint of cost, weight, mechanical strength and corrosion resistance. Furthermore, it is common to use an aluminum alloy (aluminum die-cast) from the viewpoint of light weight, high corrosion resistance, and cost for the water jacket 21, but according to this structure, welding is possible and a seal structure is unnecessary. Therefore, it can be manufactured at low cost. Moreover, the mismatch of a mechanical characteristic can be suppressed by using the same raw material.
  • the semiconductor device includes the water jacket 21 as a jacket member made of an aluminum alloy connected to the heat conducting metal member 2 in the cooling member 12.
  • the cooling member 12 can be fixed and sealed by welding, and a special sealing structure is not required. Therefore, it can be manufactured at low cost. Moreover, the mismatch of a mechanical characteristic can be suppressed by using the same raw material.
  • the method for manufacturing a semiconductor device includes a step of preparing the insulating substrate 13, a step of disposing the semiconductor chip 11 on the insulating substrate 13, a step of forming the cooling member 12, and the insulating substrate. And a step of bonding the thermal stress absorbing member 1 side of the cooling member 12 to the back surface via the bonding material 23.
  • the step of preparing the insulating substrate 13 is a step of preparing the insulating substrate 13 including the insulating ceramic 6 as an insulating plate and the conductive plate 5 and the conductive plate 7 provided on both surfaces of the insulating ceramic 6.
  • the step of forming the cooling member 12 is a step of forming the cooling member 12 which is a composite member by integrating the thermal stress absorbing member 1 and the heat conducting metal member 2 made of aluminum by hot rolling. is there.
  • the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23.
  • the thermal stress caused by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the thermal expansion coefficient of the cooling member 12 is reduced by using the thermal stress absorbing member 1 having a simple structure. can do. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
  • FIG. 8 is a cross-sectional view showing the structure of the semiconductor device according to this embodiment.
  • DBC substrate direct bonded copper substrate, copper-clad substrate
  • the conductive plate 5a and the conductive plate 7a of the insulating substrate 13a are formed of copper or a copper alloy, as shown in FIG.
  • the linear expansion coefficient adjusting layer 31 is preferably formed from the same copper or copper alloy as the conductive plates (conductive plate 5a and conductive plate 7a) of the DBC substrate. Moreover, as the formation method, the method of joining by integrating the thermal stress absorption member 1 side of the cooling member 12 and the copper plate (linear expansion coefficient adjusting layer 31) by brazing or the like may be used. A method of forming the linear expansion coefficient adjustment layer 31 as a copper film on the thermal stress absorbing member 1 side of the member 12 by a cold spray method or a thermal spraying method may be used. In particular, the cold spray method is preferable because it is relatively inexpensive and can form a thick copper film over a large area.
  • the linear expansion coefficient adjusting layer 31 is bonded to the back surface of the insulating substrate 13a through the bonding material 23.
  • both the upper and lower surfaces of the bonding material 23 are members made of the same material, the thermal stress applied to the bonding material 23 is equalized, and the bonding reliability between the insulating substrate 13a and the cooling member 12 is ensured.
  • the property is further improved. In particular, when the bonding material 23 is solder, the effect is remarkable.
  • FIG. 9 is a cross-sectional view showing another example of the structure of the semiconductor device according to this embodiment.
  • the conductive plate 5 b of the insulating substrate 13 b is composed of a copper plate 51 and an aluminum plate 52.
  • the conductive plate 7 b of the insulating substrate 13 b is composed of an aluminum plate 72 and a copper plate 71.
  • the copper plate 51 and the copper plate 71 are made of copper or a copper alloy.
  • Aluminum plate 52 and aluminum plate 72 are made of aluminum or an aluminum alloy.
  • the thermal stress is absorbed.
  • the linear expansion coefficient adjusting layer 31 integrally formed on the member 1 the same effect as described above can be obtained.
  • the aluminum plate 72 (and also the aluminum plate 52) is pure aluminum having a purity of at least 99.5% or more, preferably 99.9% or more, the thermal stress of the insulating ceramic main cause of the insulating substrate 13b is relieved. Therefore, the bonding reliability between the insulating substrate 13b and the cooling member 12 is further improved.
  • the copper plate 71 which is a part which contacts the joining material 23 of the conducting plate 7a or the conducting plate 7b is made of copper or a copper alloy.
  • the semiconductor device includes a linear expansion coefficient adjustment layer 31 made of copper or a copper alloy bonded to the back surface of the insulating substrate via the bonding material 23.
  • the cooling member 12 is further joined to the linear expansion coefficient adjustment layer 31.
  • the linear expansion coefficient adjusting layer 31 made of a copper alloy is bonded to the back surface of the insulating substrate via the bonding material 23, so that the thermal stress is equalized on the members on both sides of the bonding material 23, and the insulating substrate and the cooling layer are cooled.
  • the joint reliability with the member 12 is improved.
  • the bonding material 23 is made of solder, the effect is remarkable.
  • the conductive plate 5b and the conductive plate 7b are constituted by a laminated structure of copper or a copper alloy and aluminum or an aluminum alloy.
  • the conducting plate when a laminated structure in which copper having high thermal conductivity and aluminum that is easily plastically deformed is used as the conducting plate, a portion of the conducting plate (copper plate 71) that contacts the bonding material 23 is used.
  • the thermal expansion is equalized on the members on both sides of the bonding material 23 by bonding the linear expansion coefficient adjustment layer 31 made of the same copper or copper alloy to the back surface of the insulating substrate 13b via the bonding material 23. Further, the bonding reliability between the insulating substrate 13b and the cooling member 12 is improved. In particular, when the bonding material 23 is made of solder, the effect is remarkable.
  • the conductive plate 5b and the conductive plate 7b include a layer made of aluminum having a purity of 99.5% or more.
  • the thermal stress due to the insulating ceramic 6 of the insulating substrate 13b is relieved, so that the bonding reliability between the insulating substrate 13b and the cooling member 12 is improved.
  • the method for manufacturing a semiconductor device includes a step of preparing an insulating substrate, a step of disposing the semiconductor chip 11 on the insulating substrate, a step of forming the cooling member 12, and a linear expansion coefficient adjustment.
  • the step of forming the layer 31 and the step of bonding the linear expansion coefficient adjusting layer 31 to the back surface of the insulating substrate via the bonding material 23 are provided.
  • the step of preparing an insulating substrate is a step of preparing an insulating substrate including an insulating ceramic 6 as an insulating plate and a conductive plate provided on both surfaces of the insulating ceramic 6.
  • the step of forming the cooling member 12 is a step of forming the cooling member 12 which is a composite member from the thermal stress absorbing member 1 and the heat conductive metal member 2 made of aluminum.
  • the step of forming the linear expansion coefficient adjustment layer 31 is a step of forming the linear expansion coefficient adjustment layer 31 made of copper or a copper alloy on the thermal stress absorbing member 1 side of the cooling member 12 using a cold spray method. It is.
  • the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23, and at least a portion of the conductive plate 7a or the conductive plate 7b that contacts the bonding material 23 is made of copper or a copper alloy.
  • the linear expansion coefficient adjusting layer 31 made of a copper alloy is bonded to the back surface of the insulating substrate via the bonding material 23, so that the thermal stress is equalized on the members on both sides of the bonding material 23, and the insulating substrate and the cooling layer are cooled.
  • the joint reliability with the member 12 is improved.
  • the cold spray method for forming the linear expansion coefficient adjustment layer 31 is a method of forming the linear expansion coefficient adjustment layer 31 as a copper film, and is preferable because a thick copper film can be formed over a large area at a relatively low cost.
  • thermal stress absorbing member 1 thermal stress absorbing member, 2 heat conducting metal member, 5, 5a, 5b, 7, 7a, 7b conductive plate, 6 insulating ceramics, 8 epoxy resin, 9 lead frame, 11 semiconductor chip, 12 cooling member, 13, 13a, 13b insulating substrate, 21 water jacket, 22 die bond material, 23, 24 bonding material, 31 linear expansion coefficient adjustment layer, 51, 71 copper plate, 52, 72 aluminum plate, 101, 102 thickness.

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Abstract

The present invention provides a semiconductor device having high heat transferability and excellent machinability, and a production method therefor. The present invention is provided with the following: an insulating substrate (13); a semiconductor chip (11) provided on the insulating substrate; and a cooling member (12) bonded to the rear surface of the insulating substrate via a bonding material (23). The insulating substrate has an insulating plate (6), and a conductive plate (5) and a conductive plate (7) provided on both surfaces of the insulating plate. The cooling member is a composite member in which a thermal stress absorbing member (1) made of aluminum and a heat transferring metal member (2) are integrally formed. The thermal stress absorbing member is provided on the side of the cooling member that bonds with the insulating substrate rear surface, and the yield stress of the thermal stress absorbing member is lower than that of the bonding material.

Description

半導体装置およびその製造方法Semiconductor device and manufacturing method thereof
　本発明は、半導体装置および半導体装置の製造方法に関し、特に、放熱性が要求される半導体装置および当該半導体装置の製造方法に関するものである。 The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device that requires heat dissipation and a method for manufacturing the semiconductor device.
　ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ　Ｇａｔｅ　Ｂｉｐｏｌａｒ　Ｔｒａｎｓｉｓｔｏｒ）等の半導体チップを使用した半導体装置（パワーモジュール）においては、半導体チップから発せられる熱を効率良く放熱して、半導体チップの温度を所定温度以下に保つ必要がある。 In a semiconductor device (power module) using a semiconductor chip such as an IGBT (Insulated Gate Bipolar Transistor), it is necessary to efficiently dissipate heat generated from the semiconductor chip to keep the temperature of the semiconductor chip below a predetermined temperature.
　従来から、窒化珪素、窒化アルミニウムまたはアルミナ等の高熱伝導性の絶縁セラミックス板と、その両面に設けられたアルミニウムまたは銅（同合金を含む。以下、同じ）等の高熱伝導性金属からなる導板とが一体となった所謂絶縁基板の一面に、半田等の接合材を介して半導体チップが接合され、絶縁基板の他面に、半田等の接合材を介して直接的ないし間接的に冷却器が接合されたパワーモジュールがある。 Conventionally, a conductive plate made of a highly thermally conductive insulating ceramic plate such as silicon nitride, aluminum nitride, or alumina, and a highly thermally conductive metal such as aluminum or copper (including the same alloy, hereinafter the same) provided on both surfaces thereof. The semiconductor chip is bonded to one surface of a so-called insulating substrate integrated with solder via a bonding material such as solder, and the cooler is directly or indirectly connected to the other surface of the insulating substrate via a bonding material such as solder. There is a power module that is joined.
　ところが、使用条件によっては、絶縁基板と冷却器との間の熱膨張係数の相違に起因して熱応力が発生し、絶縁基板と冷却器とを接合する接合材にクラックが生じて、要求される寿命期間に十分な放熱性能を維持できない場合があった。 However, depending on the use conditions, thermal stress is generated due to the difference in thermal expansion coefficient between the insulating substrate and the cooler, and a crack is generated in the bonding material that joins the insulating substrate and the cooler. In some cases, sufficient heat dissipation performance could not be maintained during the lifetime.
　そこで、このような問題を解決するため、応力緩和部材を絶縁基板と冷却器の間に配置する提案が為されている（例えば特許文献１）。 Therefore, in order to solve such a problem, a proposal has been made to arrange a stress relaxation member between an insulating substrate and a cooler (for example, Patent Document 1).
　特許文献１における応力緩和部材は、複数の貫通穴が形成された肉厚０．３～３ｍｍのアルミニウム板からなる。応力緩和部材の各貫通穴が応力吸収空間となっている。応力緩和部材は、絶縁基板およびヒートシンクにろう付されている。応力吸収空間の働きにより応力緩和部材が変形し、これにより熱応力が緩和される。 The stress relaxation member in Patent Document 1 is made of an aluminum plate having a thickness of 0.3 to 3 mm in which a plurality of through holes are formed. Each through hole of the stress relaxation member is a stress absorbing space. The stress relaxation member is brazed to the insulating substrate and the heat sink. The stress relieving member is deformed by the action of the stress absorbing space, thereby relieving the thermal stress.
特開２００６－２９４６９９号公報JP 2006-294699 A
　しかしながら、特許文献１のような応力吸収空間を有する応力緩和部材を備える半導体装置にあっては、２つの大きな問題がある。 However, the semiconductor device including the stress relaxation member having the stress absorption space as in Patent Document 1 has two major problems.
　１つ目は、熱伝達性の問題である。応力緩和部材の平均的熱伝達率は、母材の平均的熱伝達率に比べて低い。これは、応力緩和部材の応力吸収空間は空気であり、その熱伝達率は極めて低いため、平均的には、応力吸収空間の体積割合分だけ母材の持つ熱伝達率から低下するためである。また、望ましくは厚さ１～４ｍｍである応力緩和部材での、熱流の広がりが良くない。熱の流れが応力吸収空間に邪魔されてしまうためである。さらに、絶縁基板およびヒートシンクとの接続部には母材よりも熱伝達率が低いろう材を用いるが、この接続部の数が多いため、全体の熱抵抗を増加させてしまう。 The first is a heat transfer problem. The average heat transfer coefficient of the stress relaxation member is lower than the average heat transfer coefficient of the base material. This is because the stress absorption space of the stress relaxation member is air, and its heat transfer coefficient is extremely low, so that, on average, the heat transfer coefficient of the base material is lowered by the volume ratio of the stress absorption space. . In addition, the heat flow spreads poorly in the stress relaxation member desirably having a thickness of 1 to 4 mm. This is because the heat flow is disturbed by the stress absorption space. Further, a brazing material having a heat transfer coefficient lower than that of the base material is used for the connection portion between the insulating substrate and the heat sink. However, since the number of the connection portions is large, the overall thermal resistance is increased.
　２つ目は、工作性の問題である。応力緩和部材と絶縁基板とのろう付は、処理温度の関係で絶縁基板に半導体チップを搭載した状態ではできない。すなわち、冷却器、応力緩和部材および絶縁基板が一体となった基板ＡＳＳＹ品（集合部品）の状態で、半導体チップのダイボンド、さらにはワイヤボンドをする必要がある。ダイボンド時およびワイヤボンド時には、絶縁基板は完全に固定されていることが望ましいが、冷却器と応力緩和部材との間では、その構造上十分な剛性を得にくい。よって、例えば加圧を必要とする工程では、絶縁基板またはチップの割れおよび破損、例えば超音波を用いた加工工程では、超音波抜けによる不着等の問題が生じる。 The second problem is workability. The stress relaxation member and the insulating substrate cannot be brazed in a state where the semiconductor chip is mounted on the insulating substrate because of the processing temperature. That is, it is necessary to perform die bonding and further wire bonding of the semiconductor chip in the state of the substrate ASSY product (collective component) in which the cooler, the stress relaxation member, and the insulating substrate are integrated. At the time of die bonding and wire bonding, it is desirable that the insulating substrate is completely fixed, but it is difficult to obtain sufficient rigidity between the cooler and the stress relaxation member because of its structure. Therefore, for example, in a process that requires pressurization, the insulating substrate or chip is cracked and broken. For example, in a processing process using ultrasonic waves, problems such as non-adherence due to ultrasonic loss occur.
　本発明は、上記のような問題を解決するためになされたものであり、高熱伝達であり、かつ、工作性に優れた半導体装置およびその製造方法を提供することを目的とする。 The present invention has been made to solve the above-described problems, and an object thereof is to provide a semiconductor device having high heat transfer and excellent workability, and a method for manufacturing the same.
　本発明の一態様に関する半導体装置は、絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板と、前記絶縁基板上に設けられた半導体チップと、前記絶縁基板裏面に、接合材を介して接合された冷却部材とを備え、前記冷却部材は、アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とが積み重なった複合部材であり、前記熱応力吸収部材は、前記絶縁基板裏面と接合する側に配置され、前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さいことを特徴とする。 A semiconductor device according to one embodiment of the present invention includes an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate, a semiconductor chip provided on the insulating substrate, and a back surface of the insulating substrate. A cooling member joined through a material, and the cooling member is a composite member in which a thermal stress absorbing member made of aluminum and a heat conductive metal member are stacked, and the thermal stress absorbing member is the insulating member It is arrange | positioned at the side joined with a board | substrate back surface, The yield stress of the said thermal-stress absorption member is smaller than the yield stress of the said joining material, It is characterized by the above-mentioned.
　本発明の別の態様に関する半導体装置は、絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板と、前記絶縁基板上に設けられた半導体チップと、前記絶縁基板裏面に接合された冷却部材とを備え、前記冷却部材は、アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とが一体となった複合部材であり、前記熱応力吸収部材は、前記絶縁基板裏面と接合する側に配置され、前記熱応力吸収部材が、純度９９．５％以上のアルミニウムで構成されていることを特徴とする。 A semiconductor device according to another aspect of the present invention includes an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate, a semiconductor chip provided on the insulating substrate, and a back surface of the insulating substrate. The cooling member is a composite member in which a thermal stress absorbing member made of aluminum and a heat conductive metal member are integrated, and the thermal stress absorbing member is formed on the back surface of the insulating substrate. It is arrange | positioned at the side to join and the said thermal-stress absorption member is comprised with the aluminum of purity 99.5% or more, It is characterized by the above-mentioned.
　本発明の一態様に関する半導体装置の製造方法は、（ａ）絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板を用意する工程と、（ｂ）前記絶縁基板上に半導体チップを配置する工程と、（ｃ）アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とを熱間圧延することで一体化させ、複合部材である冷却部材を形成する工程と、（ｄ）前記絶縁基板裏面に、接合材を介して前記冷却部材の前記熱応力吸収部材側を接合させる工程とを備え、前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さいことを特徴とする。 A method of manufacturing a semiconductor device according to an aspect of the present invention includes: (a) preparing an insulating substrate including an insulating plate and conductive plates provided on both surfaces of the insulating plate; and (b) a semiconductor on the insulating substrate. A step of disposing a chip, (c) a step of forming a cooling member which is a composite member by integrating a thermal stress absorbing member and a heat conducting metal member made of aluminum by hot rolling, and (d) And a step of bonding the thermal stress absorbing member side of the cooling member to the back surface of the insulating substrate via a bonding material, wherein the yield stress of the thermal stress absorbing member is smaller than the yield stress of the bonding material. Features.
　本発明の別の態様に関する半導体装置の製造方法は、（ａ）絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板を用意する工程と、（ｂ）前記絶縁基板上に半導体チップを配置する工程と、（ｃ）アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とから、複合部材である冷却部材を形成する工程と、（ｄ）前記冷却部材の前記熱応力吸収部材側に、コールドスプレー法を用いて、銅または銅合金で構成される線膨張係数調整層を形成する工程と、（ｅ）前記絶縁基板裏面に、接合材を介して、前記線膨張係数調整層を接合させる工程とを備え、前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さく、前記導板の少なくとも前記接合材と接触する部分は、銅または銅合金で構成されていることを特徴とする。 A method of manufacturing a semiconductor device according to another aspect of the present invention includes: (a) preparing an insulating substrate including an insulating plate and a conductive plate provided on both surfaces of the insulating plate; and (b) on the insulating substrate. A step of disposing a semiconductor chip; (c) a step of forming a cooling member which is a composite member from a heat stress absorbing member and a heat conductive metal member made of aluminum; and (d) the thermal stress of the cooling member. Forming a linear expansion coefficient adjusting layer made of copper or a copper alloy on the absorbing member side using a cold spray method; and (e) the linear expansion coefficient on the back surface of the insulating substrate via a bonding material. A step of bonding the adjustment layer, wherein the yield stress of the thermal stress absorbing member is smaller than the yield stress of the bonding material, and at least a portion of the conductive plate that contacts the bonding material is made of copper or a copper alloy. It is characterized by That.
　本発明の上記態様によれば、熱膨張係数との差に起因する熱応力を熱応力吸収部材を用いることで緩和することができる。よって、熱伝達性、工作性、信頼性およびコストを満足させることができる。 According to the above aspect of the present invention, the thermal stress due to the difference from the thermal expansion coefficient can be relaxed by using the thermal stress absorbing member. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
　本発明の目的、特徴、局面、および利点は、以下の詳細な説明と添付図面とによって、より明白となる。 The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.
実施形態に関する半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the semiconductor device regarding embodiment. 一般的な３相インバーター用ＩＧＢＴモジュールの回路図である。It is a circuit diagram of a general IGBT module for a three-phase inverter. 実施形態に関する半導体装置を１ｉｎ１のモジュールで構成した場合の断面図である。It is sectional drawing at the time of comprising the semiconductor device regarding embodiment with the module of 1 in 1. FIG. 実施形態に関する半導体装置を１ｉｎ１のモジュールで構成した場合の上面図である。It is a top view at the time of comprising the semiconductor device concerning embodiment with a module of 1 in 1. FIG. 接合材のき裂長さの温度サイクル数依存性を示した図である。It is the figure which showed the temperature cycle number dependence of the crack length of a joining material. 温度サイクル後の冷却部材の反りまたはうねりと、熱伝導金属部材厚／熱応力吸収部材厚との関係を示した図である。It is the figure which showed the relationship between the curvature or the wave | undulation of the cooling member after a temperature cycle, and a heat conductive metal member thickness / thermal stress absorption member thickness. アルミニウムの純度と耐力との関係を示した図である。It is the figure which showed the relationship between the purity and yield strength of aluminum. 実施形態に関する半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the semiconductor device regarding embodiment. 実施形態に関する半導体装置の構造の他の例を示す断面図である。It is sectional drawing which shows the other example of the structure of the semiconductor device regarding embodiment.
　以下、添付の図面を参照しながら実施形態について説明する。 Hereinafter, embodiments will be described with reference to the accompanying drawings.
　＜第１実施形態＞
　＜構成＞
　以下、特に指定なく銅またはアルミニウム等の材料名を記載した場合は、他の添加物を含んだ例えば銅合金またはアルミニウム合金も包含するものとする。 <First Embodiment>
<Configuration>
Hereinafter, when a material name such as copper or aluminum is described without any special designation, it includes, for example, a copper alloy or an aluminum alloy containing other additives.
　図１は、本実施形態に関する半導体装置の構造を示す断面図である。図２は、一般的な３相インバーター用ＩＧＢＴモジュールの回路図であり、本実施形態に関する半導体装置を１ｉｎ１のモジュールで構成した場合の断面図を図３に、本実施形態に関する半導体装置を１ｉｎ１のモジュールで構成した場合の上面図を図４にそれぞれ示す。 FIG. 1 is a cross-sectional view showing the structure of a semiconductor device according to this embodiment. FIG. 2 is a circuit diagram of a general IGBT module for a three-phase inverter. FIG. 3 is a cross-sectional view of the semiconductor device according to the present embodiment configured with a 1 in 1 module, and FIG. FIG. 4 shows a top view of the module.
　図３および図４に示されるように、半導体チップ１１（ここではＩＧＢＴチップ、但しダイオードは図示せず）を搭載した絶縁基板１３が複数個（ここでは６個）、接合材２３を介して冷却部材１２に接合される。このモジュールは、エポキシ樹脂８で封止される。各モジュール間は、接合材２４を介してリードフレーム９で電気的に接続される。 As shown in FIGS. 3 and 4, a plurality of insulating substrates 13 (six here) mounted with a semiconductor chip 11 (here, an IGBT chip, but no diode is shown) are cooled via a bonding material 23. Joined to the member 12. This module is sealed with an epoxy resin 8. Each module is electrically connected by a lead frame 9 via a bonding material 24.
　冷却部材１２は、少なくとも純度９９．５％以上、望ましくは９９．９％以上の純アルミニウムで構成される熱応力吸収部材１と、銅またはアルミニウム等の熱伝導金属部材２とが積み重なった複合部材である。 The cooling member 12 is a composite member in which a thermal stress absorbing member 1 composed of pure aluminum having a purity of at least 99.5% or more, desirably 99.9% or more, and a heat conductive metal member 2 such as copper or aluminum are stacked. It is.
　図５は、熱サイクル試験（－４０℃～１７５℃）における接合部材のき裂長さ、すなわち、接合材のき裂長さの温度サイクル数依存性を示す図である。但し、接合材２３は高強度はんだであり、絶縁基板１３はＤＢＣである。冷却部材１２が厚さが６ｍｍであるアルミ合金（合金呼称Ａ６０６３）と、厚さが０．５ｍｍである純度４Ｎのアルミニウムとの複合材である場合（図中、「熱応力吸収部材０．５ｔ」と記載）は、接合材２３にはほぼき裂が発生していない。冷却部材１２が、厚さが６．５ｍｍであるアルミ合金（Ａ６０６３）のみからなる場合（図中、「熱応力吸収部材なし」と記載）は、接合材２３にき裂が進展する。 FIG. 5 is a diagram showing the temperature cycle number dependency of the crack length of the joining member in the thermal cycle test (−40 ° C. to 175 ° C.), that is, the crack length of the joining material. However, the bonding material 23 is high-strength solder, and the insulating substrate 13 is DBC. When the cooling member 12 is a composite material of an aluminum alloy (alloy name A6063) having a thickness of 6 mm and an aluminum having a thickness of 0.5 mm and a purity of 4N (in the figure, “thermal stress absorbing member 0.5t In the bonding material 23 is not substantially cracked. When the cooling member 12 is made of only an aluminum alloy (A6063) having a thickness of 6.5 mm (described as “no thermal stress absorbing member” in the figure), a crack develops in the bonding material 23.
　図１に示される熱応力吸収部材１の厚み１０１は、アルミニウムの純度によって効果に対するコストの関係が異なるため、アルミニウムの純度によってその最適値が異なる。アルミニウムが高純度であるほど厚みは薄くできるが、およそ０．０５～０．５ｍｍに設定すればよい。 The thickness 101 of the thermal stress absorbing member 1 shown in FIG. 1 differs in the optimum value depending on the purity of aluminum because the cost relationship with the effect differs depending on the purity of aluminum. The higher the purity of aluminum, the thinner the thickness, but the thickness may be set to about 0.05 to 0.5 mm.
　熱伝導金属部材２には、コスト、重量、機械強度および耐腐食性の観点から、純度９９．０％未満のアルミニウム合金、例えば合金呼称Ａ６０６３（ＪＩＳ記号）のようなアルミニウム合金が用いられることが好ましい。 From the viewpoint of cost, weight, mechanical strength, and corrosion resistance, an aluminum alloy having a purity of less than 99.0%, for example, an aluminum alloy such as alloy designation A6063 (JIS symbol) is used for the heat conductive metal member 2. preferable.
　熱伝導金属部材２は、構造材を兼ねている。特に車載用途等においては、共振周波数を高く設定して、実使用時に共振しないよう配慮する必要があるため、熱伝導金属部材２には一定の厚さが必要である。車載用途等では、熱伝導金属部材２の厚さ１０２は、およそ２ｍｍ以上、固定使用の場合でも１ｍｍ以上の厚さを有していることが好ましい。逆に厚すぎると熱抵抗の増加が顕著になるため、１０ｍｍ以下、好ましくは４ｍｍ以下の厚さとしておくことが望ましい。 The heat conductive metal member 2 also serves as a structural material. In particular, in in-vehicle applications and the like, it is necessary to set the resonance frequency to be high so as not to resonate during actual use. Therefore, the heat conducting metal member 2 needs to have a certain thickness. For in-vehicle applications and the like, the thickness 102 of the heat conductive metal member 2 is preferably about 2 mm or more, and preferably 1 mm or more even in the case of fixed use. On the other hand, if the thickness is too thick, the increase in thermal resistance becomes remarkable, so it is desirable to set the thickness to 10 mm or less, preferably 4 mm or less.
　熱応力吸収部材１が高純度のアルミニウムで構成されている場合は、温度サイクル等で皺のような変形が見られることがあるため、その変形が構造材を兼ねる熱伝導金属部材２に大きな影響を与えないことも重要である。 When the thermal stress absorbing member 1 is made of high-purity aluminum, deformation such as wrinkles may be seen in a temperature cycle or the like, and the deformation has a great influence on the heat conductive metal member 2 that also serves as a structural material. It is also important not to give
　図６は、熱サイクル試験（－４０℃～１７５℃）１０００回終了後における冷却部材１２の最大のうねりまたは反りを示す図である。但し、接合材２３は高強度はんだであり、絶縁基板１３はＤＢＣである。熱応力吸収部材１（ここでは純度４Ｎの純アルミ）に対して熱伝導金属部材２（ここではアルミ合金）が８倍以上である場合には、ほぼ反りまたはうねりがないことがわかる。また、熱応力吸収部材１（ここでは純度４Ｎの純アルミ）に対して熱伝導金属部材２（ここではアルミ合金）が薄い場合には、うねりまたは反り等の変形が生じやすいことがわかる。特に、熱応力吸収部材１の方が厚い場合（熱応力吸収部材１の厚さ１０１に対し熱伝導金属部材２の厚さ１０２が１倍未満である場合）は、冷却部材１２の機械特性が熱応力吸収部材１に支配されるため、うねりまたは反りは制御された値にならない。よって、熱応力吸収部材１の厚さ１０１と熱伝導金属部材２の厚さ１０２との比においては、少なくとも１倍以上望ましくは８倍以上熱伝導金属部材２が厚いことが好ましい。 FIG. 6 is a diagram showing the maximum swell or warpage of the cooling member 12 after 1000 cycles of the thermal cycle test (−40 ° C. to 175 ° C.). However, the bonding material 23 is high-strength solder, and the insulating substrate 13 is DBC. It can be seen that when the thermal conductive metal member 2 (here, aluminum alloy) is 8 times or more than the thermal stress absorbing member 1 (here, pure aluminum having a purity of 4N), there is almost no warpage or undulation. Further, it can be seen that when the heat conductive metal member 2 (here, an aluminum alloy) is thinner than the thermal stress absorbing member 1 (here, pure aluminum having a purity of 4N), deformation such as undulation or warpage is likely to occur. In particular, when the thermal stress absorbing member 1 is thicker (when the thickness 102 of the heat conducting metal member 2 is less than 1 times the thickness 101 of the thermal stress absorbing member 1), the mechanical characteristics of the cooling member 12 are Since it is governed by the thermal stress absorbing member 1, the swell or warpage is not a controlled value. Therefore, in the ratio of the thickness 101 of the thermal stress absorbing member 1 and the thickness 102 of the heat conducting metal member 2, it is preferable that the heat conducting metal member 2 is thick at least 1 time or more, desirably 8 times or more.
　あらかじめなされる熱応力吸収部材１と熱伝導金属部材２との一体化は、接合強度の安定性およびコストの観点で、熱間圧延で行われることが好ましい。あるいは、熱伝導金属部材２上に、コールドスプレー法（粉末材料を溶融温度以下の固相状態で基材へ衝突させ、成膜する方法）または溶射法等で、アルミニウムの膜として熱応力吸収部材１を形成することも可能である。 The integration of the thermal stress absorbing member 1 and the heat conducting metal member 2 made in advance is preferably performed by hot rolling from the viewpoint of stability of bonding strength and cost. Alternatively, a thermal stress absorbing member is formed as an aluminum film on the heat conducting metal member 2 by a cold spray method (a method in which a powder material is collided with a base material in a solid state at a melting temperature or lower to form a film) or a thermal spraying method. It is also possible to form 1.
　このアルミニウムで構成された熱応力吸収部材１は最弱層であり、温度サイクルにより疲労破壊で徐々に亀裂進展する。構造材でもある熱伝導金属部材２と熱応力吸収部材１との接合界面がろう材等で形成される場合、熱応力吸収部材１の母材中ではなく、界面剥離のように界面部分で一気にクラックが進展する場合がある。そのため、熱伝導金属部材２と熱応力吸収部材１との接合は、接合材なしの直接接合であることが望ましい。 The thermal stress absorbing member 1 made of aluminum is the weakest layer, and gradually cracks due to fatigue failure due to temperature cycling. When the joining interface between the heat conductive metal member 2 which is also a structural material and the thermal stress absorbing member 1 is formed of a brazing material or the like, it is not in the base material of the thermal stress absorbing member 1 but at the interface part at once, such as interface peeling. Cracks may develop. Therefore, it is desirable that the heat conductive metal member 2 and the thermal stress absorbing member 1 be joined directly without a joining material.
　このように形成された、冷却部材１２における熱応力吸収部材１表面は、例えばＮｉめっき等で表面処理されていてもよい。また、冷却部材１２の熱伝達率を高めるため、熱伝導金属部材２には、フィンまたは溝等が形成される等により表面積が拡大されていることが好ましい。 The surface of the thermal stress absorbing member 1 in the cooling member 12 formed in this way may be surface-treated with, for example, Ni plating. Further, in order to increase the heat transfer coefficient of the cooling member 12, it is preferable that the heat conducting metal member 2 has a surface area enlarged by forming fins or grooves.
　さらに、熱伝導金属部材２の下方には、液冷タイプ冷却のためのウォータージャケット２１を備えることができる。ウォータージャケット２１は例えばアルミニウム合金で構成されており、熱伝導金属部材２に接続されている。 Furthermore, a water jacket 21 for liquid cooling type cooling can be provided below the heat conducting metal member 2. The water jacket 21 is made of, for example, an aluminum alloy and is connected to the heat conducting metal member 2.
　一方、半導体チップ１１は、ダイボンド材２２を介して絶縁基板１３上に接合されている。ダイボンド材２２には、例えば銀ナノ粒子の低温焼結材、Ｃｕ－ＳｎまたはＡｇ－Ｓｎのような液相拡散接合材、または、半田等の、電気および熱の良導体である接合材料を用いることができる。さらに、半導体チップ１１と絶縁基板１３とは、Ｃｕ固相拡散接合または超音波接合等の直接接合で接合されていてもよい。 On the other hand, the semiconductor chip 11 is bonded onto the insulating substrate 13 via the die bonding material 22. For the die bond material 22, for example, a low-temperature sintered material of silver nanoparticles, a liquid phase diffusion bonding material such as Cu—Sn or Ag—Sn, or a bonding material that is a good electrical and thermal conductor such as solder is used. Can do. Furthermore, the semiconductor chip 11 and the insulating substrate 13 may be bonded by direct bonding such as Cu solid phase diffusion bonding or ultrasonic bonding.
　絶縁基板１３は、ダイボンド材２２に接する導板５と、冷却部材１２に向かい合う導板７と、導板５および導板７に挟まれて配置された絶縁セラミックス６とを備える。これらはろう材等を用いてあらかじめ一体化されている。 The insulating substrate 13 includes a conductive plate 5 in contact with the die bond material 22, a conductive plate 7 facing the cooling member 12, and the insulating ceramic 6 disposed between the conductive plate 5 and the conductive plate 7. These are integrated in advance using a brazing material or the like.
　導板５および導板７には、例えば銅またはアルミニウム等の電気および熱の良導体を用いることができる。絶縁セラミックス６には、窒化珪素、窒化アルミニウムまたはアルミナ等の、電気的に絶縁体であり、かつ、熱の良導体であるセラミックを用いることができる。 For the conductive plate 5 and the conductive plate 7, for example, a good electrical and thermal conductor such as copper or aluminum can be used. As the insulating ceramic 6, a ceramic that is an electrically insulating material and is a good conductor of heat, such as silicon nitride, aluminum nitride, or alumina, can be used.
　さらに、絶縁基板１３の導板７と冷却部材１２の熱応力吸収部材１とが、接合材２３を介して接合されている。接合材２３は、例えば銀ナノ粒子の低温焼結材、銀ペースト材、Ｃｕ－ＳｎまたはＡｇ－Ｓｎのような液相拡散接合材、または、半田等の、熱の良導体である接合材料を用いることができる。ただし、接合材２３の降伏応力（または耐力）は、使用する温度範囲で熱応力吸収部材１のそれよりも大きい必要がある。半田で接合する場合は、半田材の降伏応力も留意点であり、例えばＳｎ－Ｃｕ－Ｓｂのような高強度半田が好ましい。 Furthermore, the conductive plate 7 of the insulating substrate 13 and the thermal stress absorbing member 1 of the cooling member 12 are bonded via a bonding material 23. As the bonding material 23, for example, a low-temperature sintered material of silver nanoparticles, a silver paste material, a liquid phase diffusion bonding material such as Cu-Sn or Ag-Sn, or a bonding material that is a good conductor of heat, such as solder, is used. be able to. However, the yield stress (or proof stress) of the bonding material 23 needs to be larger than that of the thermal stress absorbing member 1 in the temperature range to be used. When joining with solder, the yield stress of the solder material is also a point to be noted, and for example, high-strength solder such as Sn—Cu—Sb is preferable.
　なお、導板７と熱応力吸収部材１とは、接合材２３を介さずに、Ｃｕ固相拡散接合または超音波接合等の直接接合で接合されていてもよい。 In addition, the conducting plate 7 and the thermal stress absorbing member 1 may be joined by direct joining such as Cu solid phase diffusion joining or ultrasonic joining without using the joining material 23.
　このような構成によれば、熱発熱体である半導体チップ１１から冷却部材１２までの熱抵抗は極めて小さく、優れた熱伝達性を得ることができる。また、絶縁基板１３と冷却部材１２との熱膨張係数の相違に起因する熱応力は、熱応力吸収部材１（純アルミニウム板）の塑性変形によって大部分が吸収されるため、絶縁基板１３と冷却部材１２との間の接続信頼性が十分確保される。 According to such a configuration, the thermal resistance from the semiconductor chip 11 which is a thermal heating element to the cooling member 12 is extremely small, and excellent heat transfer properties can be obtained. Further, most of the thermal stress caused by the difference in thermal expansion coefficient between the insulating substrate 13 and the cooling member 12 is absorbed by plastic deformation of the thermal stress absorbing member 1 (pure aluminum plate), and therefore the insulating substrate 13 and the cooling member 12 are cooled. The connection reliability with the member 12 is sufficiently ensured.
　図７は、アルミニウムの純度と耐力との関係を示した図である。図において、縦軸にアルミニウムの耐力（ａｒｂ．ｕｎｉｔ）、横軸にアルミニウムの純度をそれぞれ示している。 FIG. 7 is a diagram showing the relationship between the purity and yield strength of aluminum. In the figure, the vertical axis represents the yield strength (arb. Unit) of aluminum, and the horizontal axis represents the purity of aluminum.
　一般に純アルミニウムと称される純度９９％以上のアルミニウムであっても、耐力（降伏応力）は異なる。３Ｎ（９９．９％）以上の純度であれば、加工硬化はほとんど起らない。よって、この観点からのみ見れば、純度３Ｎ（９９．９％）以上が望ましい。 Even in the case of aluminum having a purity of 99% or more generally called pure aluminum, the proof stress (yield stress) is different. If the purity is 3N (99.9%) or higher, work hardening hardly occurs. Therefore, if it sees only from this viewpoint, purity 3N (99.9%) or more is desirable.
　しかし、純度９９．５％程度であっても、耐力（降伏応力）は純度４Ｎとの差異は小さい（２倍弱）。よって、比較的安価な接合材であるはんだの中でも、前述のＳｎ－Ｃｕ－Ｓｂのような高強度半田であれば、純度９９．５％のアルミニウムの耐力（降伏応力）が半田材の耐力（降伏応力）以下となる温度範囲が存在し、使用環境によっては実用上問題ない。 However, even if the purity is about 99.5%, the difference in yield strength (yield stress) from purity 4N is small (a little less than 2 times). Therefore, among solders that are relatively inexpensive bonding materials, the strength (yield stress) of aluminum having a purity of 99.5% is higher than the strength of the solder material (yield stress) in the case of high-strength solder such as the aforementioned Sn—Cu—Sb. There is a temperature range that is less than or equal to the yield stress, and there is no practical problem depending on the usage environment.
　アルミニウム材のコストは高純度の方が高くなるため、設計にあたっては、使用環境に合わせて実用上問題のない範囲で好適な純度を選択すればよい。 Since the cost of the aluminum material is higher when the purity is higher, a suitable purity may be selected within the range where there is no practical problem according to the use environment.
　以上のように、絶縁基板１３と冷却部材１２との熱膨張係数の相違に起因する熱応力を、簡易な構造で緩和することができるため、熱伝達性、工作性、信頼性およびコストを満足させることができる。 As described above, since the thermal stress caused by the difference in thermal expansion coefficient between the insulating substrate 13 and the cooling member 12 can be relaxed with a simple structure, the thermal conductivity, workability, reliability, and cost are satisfied. Can be made.
　なお、本実施形態では、アルミニウム合金から構成されるウォータージャケット２１と冷却部材１２とが、冷却部材１２の外周部分で電子ビーム溶接またはＦＳＷ（摩擦攪拌溶接）等によりシールされている液冷タイプの冷却器を開示しているが、冷却器は空冷タイプであってもよい。また、液冷タイプであっても、ウォータージャケット２１と冷却部材１２とのシールは溶接に限られるものではなく、Ｏリング等の高弾性材料またはガスケット等を挟んでシールすることも可能である。 In this embodiment, a water-cooled type in which a water jacket 21 made of an aluminum alloy and a cooling member 12 are sealed by electron beam welding or FSW (friction stir welding) or the like at the outer peripheral portion of the cooling member 12. Although a cooler is disclosed, the cooler may be an air-cooled type. Even in the liquid cooling type, the seal between the water jacket 21 and the cooling member 12 is not limited to welding, and it is also possible to seal with a highly elastic material such as an O-ring or a gasket interposed therebetween.
　また、ウォータージャケット２１の材質はアルミニウム合金に限られるものではないが、例えば、ＡＤＣ１２のようなアルミニウム合金は好適である。ＡＤＣ１２であれば、安価な製造方法であるアルミダイキャスト法を用いて製造することができる。また、前述したように、冷却部材１２との溶接が可能である。さらに、ＡＤＣ１２の線膨張係数は冷却部材１２の線膨張係数と同様であるため、ウォータージャケット２１と冷却部材１２との間の接合部に熱応力が発生しない。そして、ＡＤＣ１２は、軽量かつ安価である。 Further, the material of the water jacket 21 is not limited to an aluminum alloy, but an aluminum alloy such as ADC12 is suitable, for example. If it is ADC12, it can manufacture using the aluminum die-casting method which is an inexpensive manufacturing method. Further, as described above, welding with the cooling member 12 is possible. Furthermore, since the linear expansion coefficient of the ADC 12 is the same as the linear expansion coefficient of the cooling member 12, no thermal stress is generated at the joint between the water jacket 21 and the cooling member 12. The ADC 12 is lightweight and inexpensive.
　また、本実施形態では、絶縁基板への半導体チップ１１の搭載数は１つとなっているが（図１参照）、同種、若しくは、ＩＧＢＴとダイオードとの組み合わせのような機能の異なる半導体チップが、同一の絶縁基板に複数搭載されている場合であってもよい。また、複数の絶縁基板が同一の冷却器に搭載されている場合（図４参照）等の様々な組み合わせが可能である。 In this embodiment, the number of semiconductor chips 11 mounted on the insulating substrate is one (see FIG. 1). However, semiconductor chips of the same type or different functions such as a combination of an IGBT and a diode may be used. It may be a case where a plurality of devices are mounted on the same insulating substrate. Various combinations are possible, such as when a plurality of insulating substrates are mounted on the same cooler (see FIG. 4).
　また、半導体チップ１１の材質に関しては、Ｓｉのみならず、ＳｉＣまたはＧａＮ等のような所謂ワイドバンドギャップ半導体、あるいはそれらの混載等が可能であり、特に制約はない。ここで、ワイドバンドギャップ半導体とは、一般に、およそ２ｅＶ以上の禁制帯幅をもつ半導体を指し、ＧａＮに代表される３族窒化物、ＺｎＯに代表される２族窒化物、ＺｎＳｅに代表される２族カルコゲナイドおよびＳｉＣ等が知られている。 Further, regarding the material of the semiconductor chip 11, not only Si but also a so-called wide band gap semiconductor such as SiC or GaN, or mixed mounting of them can be used, and there is no particular limitation. Here, the wide band gap semiconductor generally refers to a semiconductor having a forbidden band width of about 2 eV or more, and is represented by a group 3 nitride represented by GaN, a group 2 nitride represented by ZnO, and ZnSe. Group 2 chalcogenides and SiC are known.
　特に、Ｓｉチップに比べ大電流密度で使用可能で、チップ面積さらには装置全体の小型化が可能なＳｉＣチップは、チップ面積が小さいために冷却器に至る熱流の広がり方が熱抵抗に顕著に影響を与える。よって、熱の広がりを妨害するものがなく熱広がりの良好な本発明は、ＳｉＣチップ搭載の半導体装置に対して好適である。 In particular, a SiC chip that can be used at a higher current density than the Si chip and that can reduce the chip area and the overall size of the device has a small chip area. Influence. Therefore, the present invention having good heat spread without disturbing the heat spread is suitable for a semiconductor device mounted with a SiC chip.
　＜効果＞
　本実施形態によれば、半導体装置が、絶縁基板１３と、絶縁基板１３上に設けられた半導体チップ１１と、絶縁基板１３裏面に、接合材２３を介して接合された冷却部材１２とを備える。 <Effect>
According to the present embodiment, the semiconductor device includes the insulating substrate 13, the semiconductor chip 11 provided on the insulating substrate 13, and the cooling member 12 bonded to the back surface of the insulating substrate 13 via the bonding material 23. .
　絶縁基板１３は、絶縁板としての絶縁セラミックス６と、絶縁セラミックス６両面に設けられた導板５および導板７とを備える。 The insulating substrate 13 includes an insulating ceramic 6 as an insulating plate, and a conductive plate 5 and a conductive plate 7 provided on both surfaces of the insulating ceramic 6.
　冷却部材１２は、アルミニウムで構成される熱応力吸収部材１と熱伝導金属部材２とが一体となった複合部材である。 The cooling member 12 is a composite member in which the thermal stress absorbing member 1 made of aluminum and the heat conducting metal member 2 are integrated.
　熱応力吸収部材１は、絶縁基板１３裏面と接合する側に配置され、熱応力吸収部材１の降伏応力は、接合材２３の降伏応力より小さい。 The thermal stress absorbing member 1 is disposed on the side to be bonded to the back surface of the insulating substrate 13, and the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23.
　このような構成によれば、絶縁基板１３の実効線膨張係数と、冷却部材１２の熱膨張係数との差に起因する熱応力を、シンプルな構造である熱応力吸収部材１を用いることで緩和することができる。よって、熱伝達性、工作性、信頼性およびコストを満足させることができる。 According to such a configuration, the thermal stress caused by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the thermal expansion coefficient of the cooling member 12 is reduced by using the thermal stress absorbing member 1 having a simple structure. can do. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
　また、本実施形態によれば、半導体チップ１１を搭載した絶縁基板１３が複数個、接合材２３を介して冷却部材１２の一部である熱応力吸収部材１に接合されるため、各絶縁基板ごとに熱応力吸収部材１を配するよりも安価に半導体装置を提供することができる。 In addition, according to the present embodiment, a plurality of insulating substrates 13 on which the semiconductor chip 11 is mounted are bonded to the thermal stress absorbing member 1 that is a part of the cooling member 12 via the bonding material 23, so that each insulating substrate Therefore, it is possible to provide a semiconductor device at a lower cost than when the thermal stress absorbing member 1 is provided.
　また、このモジュールをエポキシ樹脂８で封止した場合の独特の効果として、取り扱いが容易であり、冷却板に接合する前に半導体チップの特性を検査し、良品のみ冷却板に搭載することができること、さらに、それにより、高品質かつ安価にインバーターを構成することができることがある。 In addition, as a unique effect when this module is sealed with epoxy resin 8, it is easy to handle, and the characteristics of the semiconductor chip can be inspected before joining to the cooling plate, and only good products can be mounted on the cooling plate. In addition, the inverter may be configured with high quality and low cost.
　なお、いわゆるケース型と呼ばれる、ゲル状の材料で封止する場合においても、上記、エポキシ封止独特の効果以外の効果を得ることができる。 In addition, even when sealing with a gel-like material called a so-called case type, effects other than the above-described effects unique to epoxy sealing can be obtained.
　また、本実施形態によれば、熱応力吸収部材１が、純度９９．５％以上のアルミニウムで構成されている。 Moreover, according to this embodiment, the thermal stress absorbing member 1 is made of aluminum having a purity of 99.5% or more.
　このような構成によれば、絶縁基板１３の実効線膨張係数と、冷却部材１２の線膨張係数との差により発生する熱応力を、熱応力吸収部材１の（純アルミニウム材）の塑性変形により低減することができる。純度９９．５％以上のアルミニウムを採用することにより、接合材２３をはんだ（高強度はんだ）で構成する場合でも、接合材２３の降伏応力（または耐力）を熱応力吸収部材１の降伏応力より大きく設定することが可能であり、接合材２３に比較的安価なはんだを採用しつつ、温度サイクルに対して十分な信頼性を確保することができる。 According to such a configuration, the thermal stress generated by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the linear expansion coefficient of the cooling member 12 is caused by plastic deformation of the (pure aluminum material) of the thermal stress absorbing member 1. Can be reduced. By adopting aluminum having a purity of 99.5% or more, even when the bonding material 23 is made of solder (high strength solder), the yield stress (or proof stress) of the bonding material 23 is determined from the yield stress of the thermal stress absorbing member 1. It is possible to set a large value, and it is possible to ensure sufficient reliability with respect to the temperature cycle while employing relatively inexpensive solder for the bonding material 23.
　また、本実施形態によれば、熱伝導金属部材２が、純度９９．０％未満のアルミニウム合金で構成されている。 Further, according to the present embodiment, the heat conducting metal member 2 is made of an aluminum alloy having a purity of less than 99.0%.
　このような構成によれば、純アルミニウムである熱応力吸収部材１と熱伝導金属部材２との接合が容易であり、コスト、重量、機械強度および耐腐食性の観点で望ましい。さらに、ウォータージャケット２１にも軽量、高耐食性およびコストの観点からアルミニウム合金（アルミダイキャスト）を用いることが一般的であるが、この構造によれば、溶接ができ、かつ、シール構造が不要となるため、安価に製造できる。また、同様の素材を用いることで機械特性のミスマッチを抑制することができる。 According to such a configuration, it is easy to join the thermal stress absorbing member 1 and the heat conductive metal member 2 which are pure aluminum, which is desirable from the viewpoint of cost, weight, mechanical strength and corrosion resistance. Furthermore, it is common to use an aluminum alloy (aluminum die-cast) from the viewpoint of light weight, high corrosion resistance, and cost for the water jacket 21, but according to this structure, welding is possible and a seal structure is unnecessary. Therefore, it can be manufactured at low cost. Moreover, the mismatch of a mechanical characteristic can be suppressed by using the same raw material.
　また、本実施形態によれば、半導体装置が、冷却部材１２における熱伝導金属部材２に接続された、アルミニウム合金で構成されるジャケット部材としてのウォータージャケット２１を備える。 Further, according to the present embodiment, the semiconductor device includes the water jacket 21 as a jacket member made of an aluminum alloy connected to the heat conducting metal member 2 in the cooling member 12.
　このような構成によれば、ウォータージャケット２１がアルミニウム合金（アルミダイキャスト）で構成されるため、冷却部材１２との固定およびシールが溶接ででき、特別なシール構造が不要となる。よって、安価に製造できる。また、同様の素材を用いることで機械特性のミスマッチを抑制することができる。 According to such a configuration, since the water jacket 21 is made of an aluminum alloy (aluminum die-cast), the cooling member 12 can be fixed and sealed by welding, and a special sealing structure is not required. Therefore, it can be manufactured at low cost. Moreover, the mismatch of a mechanical characteristic can be suppressed by using the same raw material.
　また、本実施形態によれば、半導体装置の製造方法が、絶縁基板１３を用意する工程と、絶縁基板１３上に半導体チップ１１を配置する工程と、冷却部材１２を形成する工程と、絶縁基板１３裏面に、接合材２３を介して冷却部材１２の熱応力吸収部材１側を接合させる工程とを備える。 Further, according to the present embodiment, the method for manufacturing a semiconductor device includes a step of preparing the insulating substrate 13, a step of disposing the semiconductor chip 11 on the insulating substrate 13, a step of forming the cooling member 12, and the insulating substrate. And a step of bonding the thermal stress absorbing member 1 side of the cooling member 12 to the back surface via the bonding material 23.
　絶縁基板１３を用意する工程とは、絶縁板としての絶縁セラミックス６と、絶縁セラミックス６両面に設けられた導板５および導板７とを備える絶縁基板１３を用意する工程である。 The step of preparing the insulating substrate 13 is a step of preparing the insulating substrate 13 including the insulating ceramic 6 as an insulating plate and the conductive plate 5 and the conductive plate 7 provided on both surfaces of the insulating ceramic 6.
　冷却部材１２を形成する工程とは、アルミニウムで構成される熱応力吸収部材１と熱伝導金属部材２とを熱間圧延することで一体化させ、複合部材である冷却部材１２を形成する工程である。 The step of forming the cooling member 12 is a step of forming the cooling member 12 which is a composite member by integrating the thermal stress absorbing member 1 and the heat conducting metal member 2 made of aluminum by hot rolling. is there.
　なお、熱応力吸収部材１の降伏応力は、接合材２３の降伏応力より小さい。 Note that the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23.
　このような構成によれば、絶縁基板１３の実効線膨張係数と、冷却部材１２の熱膨張係数との差に起因する熱応力を、シンプルな構造である熱応力吸収部材１を用いることで緩和することができる。よって、熱伝達性、工作性、信頼性およびコストを満足させることができる。 According to such a configuration, the thermal stress caused by the difference between the effective linear expansion coefficient of the insulating substrate 13 and the thermal expansion coefficient of the cooling member 12 is reduced by using the thermal stress absorbing member 1 having a simple structure. can do. Therefore, heat transferability, workability, reliability, and cost can be satisfied.
　＜第２実施形態＞
　＜構成＞
　図８は、本実施形態に関する半導体装置の構造を示す断面図である。絶縁基板１３ａの導板５ａおよび導板７ａが銅または銅合金で形成されている所謂ＤＢＣ基板（ダイレクトボンデッドカッパー基板、銅貼り基板）のような場合、図８に示されるように、冷却部材１２の熱応力吸収部材１（純アルミニウム板）上に接合され、一体化している線膨張係数調整層３１を設けてもよい。 Second Embodiment
<Configuration>
FIG. 8 is a cross-sectional view showing the structure of the semiconductor device according to this embodiment. In the case of a so-called DBC substrate (direct bonded copper substrate, copper-clad substrate) in which the conductive plate 5a and the conductive plate 7a of the insulating substrate 13a are formed of copper or a copper alloy, as shown in FIG. It is also possible to provide a linear expansion coefficient adjusting layer 31 that is joined to and integrated with 12 thermal stress absorbing members 1 (pure aluminum plate).
　この線膨張係数調整層３１は、ＤＢＣ基板の導板（導板５ａおよび導板７ａ）と同様の銅または銅合金から形成されていることが好ましい。また、その形成方法としては、冷却部材１２の熱応力吸収部材１側と銅板（線膨張係数調整層３１）とを、ろう付け等で接合して一体化する方法であってもよいし、冷却部材１２の熱応力吸収部材１側に、コールドスプレー法または溶射法等で、銅の膜として線膨張係数調整層３１を形成する方法であってもよい。特にコールドスプレー法は、比較的安価で大面積に銅の厚膜を形成できるので好ましい。 The linear expansion coefficient adjusting layer 31 is preferably formed from the same copper or copper alloy as the conductive plates (conductive plate 5a and conductive plate 7a) of the DBC substrate. Moreover, as the formation method, the method of joining by integrating the thermal stress absorption member 1 side of the cooling member 12 and the copper plate (linear expansion coefficient adjusting layer 31) by brazing or the like may be used. A method of forming the linear expansion coefficient adjustment layer 31 as a copper film on the thermal stress absorbing member 1 side of the member 12 by a cold spray method or a thermal spraying method may be used. In particular, the cold spray method is preferable because it is relatively inexpensive and can form a thick copper film over a large area.
　そして、絶縁基板１３ａ裏面に、接合材２３を介して、線膨張係数調整層３１を接合させる。 Then, the linear expansion coefficient adjusting layer 31 is bonded to the back surface of the insulating substrate 13a through the bonding material 23.
　このような構成によれば、接合材２３の上下面両側が同じ材料からなる部材となるため、接合材２３に加わる熱応力が均等化され、絶縁基板１３ａと冷却部材１２との間の接合信頼性がより一層向上する。特に、接合材２３が半田の場合、効果は顕著である。 According to such a configuration, since both the upper and lower surfaces of the bonding material 23 are members made of the same material, the thermal stress applied to the bonding material 23 is equalized, and the bonding reliability between the insulating substrate 13a and the cooling member 12 is ensured. The property is further improved. In particular, when the bonding material 23 is solder, the effect is remarkable.
　＜変形例＞
　図９は、本実施形態に関する半導体装置の構造の他の例を示す断面図である。図９に示されるように、絶縁基板１３ｂの導板５ｂは、銅板５１とアルミニウム板５２とから構成される。また、絶縁基板１３ｂの導板７ｂは、アルミニウム板７２と銅板７１とから構成される。銅板５１および銅板７１は、銅または銅合金で構成される。アルミニウム板５２およびアルミニウム板７２は、アルミニウムまたはアルミニウム合金で構成される。 <Modification>
FIG. 9 is a cross-sectional view showing another example of the structure of the semiconductor device according to this embodiment. As shown in FIG. 9, the conductive plate 5 b of the insulating substrate 13 b is composed of a copper plate 51 and an aluminum plate 52. The conductive plate 7 b of the insulating substrate 13 b is composed of an aluminum plate 72 and a copper plate 71. The copper plate 51 and the copper plate 71 are made of copper or a copper alloy. Aluminum plate 52 and aluminum plate 72 are made of aluminum or an aluminum alloy.
　導板５ｂ、絶縁セラミックス６および導板７ｂがすべて一体となった絶縁基板１３ｂのように、導板７ｂの表面側が銅（銅板７１）である場合は、上記の場合と同様に、熱応力吸収部材１の上に一体化してなる線膨張係数調整層３１を設けることにより、上記と同様の効果を得ることができる。 When the surface side of the conductive plate 7b is copper (copper plate 71) as in the case of the insulating substrate 13b in which the conductive plate 5b, the insulating ceramic 6 and the conductive plate 7b are all integrated, as in the above case, the thermal stress is absorbed. By providing the linear expansion coefficient adjusting layer 31 integrally formed on the member 1, the same effect as described above can be obtained.
　さらに、アルミニウム板７２（さらにはアルミニウム板５２）が、少なくとも純度９９．５％以上、望ましくは９９．９％以上の純アルミニウムである場合、絶縁基板１３ｂの絶縁セラミックス主因の熱応力が緩和されるため、絶縁基板１３ｂと冷却部材１２との間の接合信頼性はさらに向上する。 Furthermore, when the aluminum plate 72 (and also the aluminum plate 52) is pure aluminum having a purity of at least 99.5% or more, preferably 99.9% or more, the thermal stress of the insulating ceramic main cause of the insulating substrate 13b is relieved. Therefore, the bonding reliability between the insulating substrate 13b and the cooling member 12 is further improved.
　＜効果＞
　本実施形態によれば、導板７ａ、または導板７ｂの接合材２３と接触する部分である銅板７１は、銅または銅合金で構成されている。そして半導体装置は、絶縁基板裏面に、接合材２３を介して接合された、銅または銅合金で構成される線膨張係数調整層３１を備えている。冷却部材１２は、線膨張係数調整層３１にさらに接合されている。 <Effect>
According to this embodiment, the copper plate 71 which is a part which contacts the joining material 23 of the conducting plate 7a or the conducting plate 7b is made of copper or a copper alloy. The semiconductor device includes a linear expansion coefficient adjustment layer 31 made of copper or a copper alloy bonded to the back surface of the insulating substrate via the bonding material 23. The cooling member 12 is further joined to the linear expansion coefficient adjustment layer 31.
　このような構成によれば、絶縁基板の導板に熱伝導率の高い銅を用いる所謂ＤＢＣ基板の場合、接合材２３に接触する部分の導板（導板７ａまたは銅板７１）と同様の銅または銅合金で構成される線膨張係数調整層３１を、絶縁基板裏面に接合材２３を介して接合させることで、接合材２３を挟む両側の部材に熱応力が均等化され、絶縁基板と冷却部材１２との間の接合信頼性が向上する。特に、接合材２３が半田で構成される場合、その効果は顕著である。 According to such a configuration, in the case of a so-called DBC substrate using copper having high thermal conductivity for the conductive plate of the insulating substrate, the same copper as the conductive plate (conductive plate 7a or copper plate 71) of the portion in contact with the bonding material 23. Alternatively, the linear expansion coefficient adjusting layer 31 made of a copper alloy is bonded to the back surface of the insulating substrate via the bonding material 23, so that the thermal stress is equalized on the members on both sides of the bonding material 23, and the insulating substrate and the cooling layer are cooled. The joint reliability with the member 12 is improved. In particular, when the bonding material 23 is made of solder, the effect is remarkable.
　また、本実施形態によれば、導板５ｂおよび導板７ｂが、銅または銅合金と、アルミニウムまたはアルミニウム合金との積層構造で構成されている。 Further, according to the present embodiment, the conductive plate 5b and the conductive plate 7b are constituted by a laminated structure of copper or a copper alloy and aluminum or an aluminum alloy.
　このような構成によれば、導板として、熱伝導率の高い銅と塑性変形しやすいアルミニウムとが積層された積層構造を用いる場合に、接合材２３に接触する部分の導板（銅板７１）と同様の銅または銅合金で構成される線膨張係数調整層３１を、絶縁基板１３ｂ裏面に接合材２３を介して接合させることで、接合材２３を挟む両側の部材に熱応力が均等化され、絶縁基板１３ｂと冷却部材１２との間の接合信頼性が向上する。特に、接合材２３が半田で構成される場合、その効果は顕著である。 According to such a configuration, when a laminated structure in which copper having high thermal conductivity and aluminum that is easily plastically deformed is used as the conducting plate, a portion of the conducting plate (copper plate 71) that contacts the bonding material 23 is used. The thermal expansion is equalized on the members on both sides of the bonding material 23 by bonding the linear expansion coefficient adjustment layer 31 made of the same copper or copper alloy to the back surface of the insulating substrate 13b via the bonding material 23. Further, the bonding reliability between the insulating substrate 13b and the cooling member 12 is improved. In particular, when the bonding material 23 is made of solder, the effect is remarkable.
　また、本実施形態によれば、導板５ｂおよび導板７ｂが、純度９９．５％以上のアルミニウムで構成される層を含む。 Further, according to the present embodiment, the conductive plate 5b and the conductive plate 7b include a layer made of aluminum having a purity of 99.5% or more.
　このような構成によれば、絶縁基板１３ｂの絶縁セラミックス６主因の熱応力が緩和されるので、絶縁基板１３ｂと冷却部材１２との間の接合信頼性が向上する。 According to such a configuration, the thermal stress due to the insulating ceramic 6 of the insulating substrate 13b is relieved, so that the bonding reliability between the insulating substrate 13b and the cooling member 12 is improved.
　また、本実施形態によれば、半導体装置の製造方法が、絶縁基板を用意する工程と、絶縁基板上に半導体チップ１１を配置する工程と、冷却部材１２を形成する工程と、線膨張係数調整層３１を形成する工程と、絶縁基板裏面に、接合材２３を介して、線膨張係数調整層３１を接合させる工程とを備える。 Further, according to the present embodiment, the method for manufacturing a semiconductor device includes a step of preparing an insulating substrate, a step of disposing the semiconductor chip 11 on the insulating substrate, a step of forming the cooling member 12, and a linear expansion coefficient adjustment. The step of forming the layer 31 and the step of bonding the linear expansion coefficient adjusting layer 31 to the back surface of the insulating substrate via the bonding material 23 are provided.
　絶縁基板を用意する工程とは、絶縁板としての絶縁セラミックス６と、絶縁セラミックス６両面に設けられた導板とを備える絶縁基板を用意する工程である。 The step of preparing an insulating substrate is a step of preparing an insulating substrate including an insulating ceramic 6 as an insulating plate and a conductive plate provided on both surfaces of the insulating ceramic 6.
　冷却部材１２を形成する工程とは、アルミニウムで構成される熱応力吸収部材１と熱伝導金属部材２とから、複合部材である冷却部材１２を形成する工程である。 The step of forming the cooling member 12 is a step of forming the cooling member 12 which is a composite member from the thermal stress absorbing member 1 and the heat conductive metal member 2 made of aluminum.
　線膨張係数調整層３１を形成する工程とは、冷却部材１２の熱応力吸収部材１側に、コールドスプレー法を用いて、銅または銅合金で構成される線膨張係数調整層３１を形成する工程である。 The step of forming the linear expansion coefficient adjustment layer 31 is a step of forming the linear expansion coefficient adjustment layer 31 made of copper or a copper alloy on the thermal stress absorbing member 1 side of the cooling member 12 using a cold spray method. It is.
　なお、熱応力吸収部材１の降伏応力は、接合材２３の降伏応力より小さく、導板７ａまたは導板７ｂの少なくとも接合材２３と接触する部分は、銅または銅合金で構成されている。 It should be noted that the yield stress of the thermal stress absorbing member 1 is smaller than the yield stress of the bonding material 23, and at least a portion of the conductive plate 7a or the conductive plate 7b that contacts the bonding material 23 is made of copper or a copper alloy.
　このような構成によれば、絶縁基板の導板に熱伝導率の高い銅を用いる所謂ＤＢＣ基板の場合、接合材２３に接触する部分の導板（導板７ａまたは銅板７１）と同様の銅または銅合金で構成される線膨張係数調整層３１を、絶縁基板裏面に接合材２３を介して接合させることで、接合材２３を挟む両側の部材に熱応力が均等化され、絶縁基板と冷却部材１２との間の接合信頼性が向上する。特に、線膨張係数調整層３１を形成するコールドスプレー法は、銅の膜として線膨張係数調整層３１を形成する方法であり、比較的安価で大面積に銅の厚膜を形成できるので好ましい。 According to such a configuration, in the case of a so-called DBC substrate using copper having high thermal conductivity for the conductive plate of the insulating substrate, the same copper as the conductive plate (conductive plate 7a or copper plate 71) of the portion in contact with the bonding material 23. Alternatively, the linear expansion coefficient adjusting layer 31 made of a copper alloy is bonded to the back surface of the insulating substrate via the bonding material 23, so that the thermal stress is equalized on the members on both sides of the bonding material 23, and the insulating substrate and the cooling layer are cooled. The joint reliability with the member 12 is improved. In particular, the cold spray method for forming the linear expansion coefficient adjustment layer 31 is a method of forming the linear expansion coefficient adjustment layer 31 as a copper film, and is preferable because a thick copper film can be formed over a large area at a relatively low cost.
　上記各実施形態では、各構成要素の材質、材料、寸法、形状、相対的配置関係または実施の条件等についても記載している場合があるが、これらはすべての局面において例示であって、本発明が記載されたものに限られることはない。よって、例示されていない無数の変形例が、本発明の範囲内において想定される。例えば、任意の構成要素を変形する場合または省略する場合、さらには、少なくとも１つの実施形態における少なくとも１つの構成要素を抽出し、他の実施形態の構成要素と組み合わせる場合が含まれる。 In each of the above embodiments, the material, material, size, shape, relative arrangement relationship, or implementation condition of each component may be described, but these are examples in all aspects, and The invention is not limited to that described. Thus, countless variations not illustrated are envisaged within the scope of the present invention. For example, a case where an arbitrary component is modified or omitted, and a case where at least one component in at least one embodiment is extracted and combined with a component in another embodiment are included.
　１　熱応力吸収部材、２　熱伝導金属部材、５，５ａ，５ｂ，７，７ａ，７ｂ　導板、６　絶縁セラミックス、８　エポキシ樹脂、９　リードフレーム、１１　半導体チップ、１２　冷却部材、１３，１３ａ，１３ｂ　絶縁基板、２１　ウォータージャケット、２２　ダイボンド材、２３，２４　接合材、３１　線膨張係数調整層、５１，７１　銅板、５２，７２　アルミニウム板、１０１，１０２　厚み。 1 thermal stress absorbing member, 2 heat conducting metal member, 5, 5a, 5b, 7, 7a, 7b conductive plate, 6 insulating ceramics, 8 epoxy resin, 9 lead frame, 11 semiconductor chip, 12 cooling member, 13, 13a, 13b insulating substrate, 21 water jacket, 22 die bond material, 23, 24 bonding material, 31 linear expansion coefficient adjustment layer, 51, 71 copper plate, 52, 72 aluminum plate, 101, 102 thickness.

Claims (14)

  1. 　絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板と、
    　前記絶縁基板上に設けられた半導体チップと、
    　前記絶縁基板裏面に、接合材を介して接合された冷却部材とを備え、
    　前記冷却部材は、アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とが一体となった複合部材であり、
    　前記熱応力吸収部材は、前記絶縁基板裏面と接合する側に配置され、
    　前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さいことを特徴とする、
    半導体装置。     An insulating substrate comprising an insulating plate and conductive plates provided on both sides of the insulating plate;
    A semiconductor chip provided on the insulating substrate;
    A cooling member bonded to the rear surface of the insulating substrate via a bonding material;
    The cooling member is a composite member in which a thermal stress absorbing member made of aluminum and a heat conductive metal member are integrated,
    The thermal stress absorbing member is disposed on the side to be bonded to the back surface of the insulating substrate,
    The yield stress of the thermal stress absorbing member is smaller than the yield stress of the bonding material,
    Semiconductor device.
  2. 　前記冷却部材に複数の絶縁基板を配置してなる、
    請求項１に記載の半導体装置。     A plurality of insulating substrates are arranged on the cooling member.
    The semiconductor device according to claim 1.
  3. 　前記熱応力吸収部材が、純度９９．５％以上のアルミニウムで構成されていることを特徴とする、
    請求項１または２に記載の半導体装置。     The thermal stress absorbing member is made of aluminum having a purity of 99.5% or more,
    The semiconductor device according to claim 1.
  4. 　前記導板の少なくとも前記接合材と接触する部分は、銅または銅合金で構成され、
    　前記冷却部材と一体としてなる銅または銅合金で構成される線膨張係数調整層を備える部材が、前記絶縁基板裏面に、前記接合材を介して接合されていることを特徴とする、
    請求項１から３のうちのいずれか１項に記載の半導体装置。     At least a portion of the conductive plate that comes into contact with the bonding material is made of copper or a copper alloy,
    A member including a linear expansion coefficient adjustment layer made of copper or a copper alloy integrated with the cooling member is bonded to the back surface of the insulating substrate via the bonding material.
    The semiconductor device according to claim 1.
  5. 　前記導板が、銅または銅合金と、アルミニウムまたはアルミニウム合金との積層構造で構成されていることを特徴とする、
    請求項４に記載の半導体装置。     The conductive plate is composed of a laminated structure of copper or a copper alloy and aluminum or an aluminum alloy,
    The semiconductor device according to claim 4.
  6. 　前記導板が、純度９９．５％以上のアルミニウムで構成される層を含むことを特徴とする、
    請求項５に記載の半導体装置。     The conductive plate includes a layer composed of aluminum having a purity of 99.5% or more,
    The semiconductor device according to claim 5.
  7. 　前記熱伝導金属部材が、純度９９．０％未満のアルミニウム合金で構成されていることを特徴とする、
    請求項１から６のうちのいずれか１項に記載の半導体装置。     The heat conductive metal member is made of an aluminum alloy having a purity of less than 99.0%,
    The semiconductor device according to claim 1.
  8. 　前記冷却部材における前記熱伝導金属部材に接続された、アルミニウム合金で構成されるジャケット部材をさらに備えることを特徴とする、
    請求項１から７のうちのいずれか１項に記載の半導体装置。     Further comprising a jacket member made of an aluminum alloy connected to the heat conducting metal member in the cooling member,
    The semiconductor device according to claim 1.
  9. 　前記半導体チップがＳｉＣで構成されていることを特徴とする、
    請求項１から８のうちのいずれか１項に記載の半導体装置。     The semiconductor chip is made of SiC,
    The semiconductor device according to claim 1.
  10. 　前記冷却部材は、アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とが一体となった複合部材であり、熱伝導金属部材の厚みが１ｍｍ以上１０ｍｍ以下であり、熱応力吸収部材の厚みは、該熱伝導金属部材の厚み以下であることを特徴とする、
    請求項１から９のうちのいずれか１項に記載の半導体装置。     The cooling member is a composite member in which a heat stress absorbing member made of aluminum and a heat conducting metal member are integrated, and the thickness of the heat conducting metal member is not less than 1 mm and not more than 10 mm, and the thickness of the heat stress absorbing member is Is less than or equal to the thickness of the thermally conductive metal member,
    The semiconductor device according to claim 1.
  11. 　絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板と、
    　前記絶縁基板上に設けられた半導体チップと、
    　前記絶縁基板裏面に接合された冷却部材とを備え、
    　前記冷却部材は、アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とが積み重なった複合部材であり、
    　前記熱応力吸収部材は、前記絶縁基板裏面と接合する側に配置され、
    　前記熱応力吸収部材が、純度９９．５％以上のアルミニウムで構成されていることを特徴とする、
    半導体装置。     An insulating substrate comprising an insulating plate and conductive plates provided on both sides of the insulating plate;
    A semiconductor chip provided on the insulating substrate;
    A cooling member bonded to the back surface of the insulating substrate,
    The cooling member is a composite member in which a heat stress absorbing member made of aluminum and a heat conductive metal member are stacked,
    The thermal stress absorbing member is disposed on the side to be bonded to the back surface of the insulating substrate,
    The thermal stress absorbing member is made of aluminum having a purity of 99.5% or more,
    Semiconductor device.
  12. 　前記冷却部材は、アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とが一体となった複合部材であり、熱伝導金属部材の厚みが１ｍｍ以上１０ｍｍ以下であり、熱応力吸収部材の厚みは、該熱伝導金属部材の厚み以下であることを特徴とする、
    請求項１１に記載の半導体装置。     The cooling member is a composite member in which a heat stress absorbing member made of aluminum and a heat conducting metal member are integrated, and the thickness of the heat conducting metal member is not less than 1 mm and not more than 10 mm, and the thickness of the heat stress absorbing member is Is less than or equal to the thickness of the thermally conductive metal member,
    The semiconductor device according to claim 11.
  13. 　（ａ）絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板を用意する工程と、
    　（ｂ）前記絶縁基板上に半導体チップを配置する工程と、
    　（ｃ）アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とを熱間圧延することで一体化させ、複合部材である冷却部材を形成する工程と、
    　（ｄ）前記絶縁基板裏面に、接合材を介して前記冷却部材の前記熱応力吸収部材側を接合させる工程とを備え、
    　前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さいことを特徴とする、
    半導体装置の製造方法。     (A) preparing an insulating substrate comprising an insulating plate and a conductive plate provided on both surfaces of the insulating plate;
    (B) disposing a semiconductor chip on the insulating substrate;
    (C) a step of forming a cooling member which is a composite member by integrating the thermal stress absorbing member and the heat conductive metal member made of aluminum by hot rolling;
    (D) a step of bonding the thermal stress absorbing member side of the cooling member to the back surface of the insulating substrate via a bonding material;
    The yield stress of the thermal stress absorbing member is smaller than the yield stress of the bonding material,
    A method for manufacturing a semiconductor device.
  14. 　（ａ）絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板を用意する工程と、
    　（ｂ）前記絶縁基板上に半導体チップを配置する工程と、
    　（ｃ）アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とから、複合部材である冷却部材を形成する工程と、
    　（ｄ）前記冷却部材の前記熱応力吸収部材側に、コールドスプレー法を用いて、銅または銅合金で構成される線膨張係数調整層を形成する工程と、
    　（ｅ）前記絶縁基板裏面に、接合材を介して、前記線膨張係数調整層を接合させる工程とを備え、
    　前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さく、
    　前記導板の少なくとも前記接合材と接触する部分は、銅または銅合金で構成されていることを特徴とする、
    半導体装置の製造方法。     (A) preparing an insulating substrate comprising an insulating plate and a conductive plate provided on both surfaces of the insulating plate;
    (B) disposing a semiconductor chip on the insulating substrate;
    (C) forming a cooling member which is a composite member from a thermal stress absorbing member made of aluminum and a heat conductive metal member;
    (D) forming a linear expansion coefficient adjustment layer made of copper or a copper alloy on the thermal stress absorbing member side of the cooling member using a cold spray method;
    (E) a step of bonding the linear expansion coefficient adjustment layer to the back surface of the insulating substrate via a bonding material;
    The yield stress of the thermal stress absorbing member is smaller than the yield stress of the bonding material,
    At least a portion of the conductive plate that contacts the bonding material is made of copper or a copper alloy,
    A method for manufacturing a semiconductor device.
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