JP2007013028A - Ceramic circuit board and power control component using same - Google Patents
Ceramic circuit board and power control component using same Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 53
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 61
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910000679 solder Inorganic materials 0.000 claims abstract description 32
- 238000005304 joining Methods 0.000 claims abstract description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract 4
- 238000007747 plating Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 11
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- 238000005219 brazing Methods 0.000 description 7
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- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229960003280 cupric chloride Drugs 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000003673 groundwater Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 235000008853 Zanthoxylum piperitum Nutrition 0.000 description 1
- 244000131415 Zanthoxylum piperitum Species 0.000 description 1
- 238000003916 acid precipitation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 ammonium halide Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000003651 drinking water Substances 0.000 description 1
- 235000020188 drinking water Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005502 peroxidation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
Description
本発明は、セラミック回路基板およびそれを用いた電力制御部品に関する。 The present invention relates to a ceramic circuit board and a power control component using the same.
パワーモジュール等に利用される回路用基板として、熱伝導率やコスト、安全性等の点から、アルミナ、ベリリア、窒化ケイ素、窒化アルミニウム等のセラミック基板が利用されている。これらのセラミック基板は、ＣｕやＡｌ等の金属回路や放熱板を接合し回路基板として用いられる。これらは、樹脂基板や樹脂層を絶縁材とする金属基板に対し、高い信頼性が得られる点が特長である。 Ceramic substrates such as alumina, beryllia, silicon nitride, and aluminum nitride are used as circuit substrates used in power modules and the like from the viewpoint of thermal conductivity, cost, safety, and the like. These ceramic substrates are used as a circuit board by joining a metal circuit such as Cu or Al or a heat sink. These are characterized in that high reliability is obtained with respect to a metal substrate using a resin substrate or a resin layer as an insulating material.
パワーモジュールに関して、これまでスズ−鉛系共晶はんだが主に使用されてきた。しかしながら、最近米国において、電子部品廃棄物が屋外に放置されると、基板上のはんだに含まれる鉛が酸性雨と容易に反応して地下水に溶出し、この地下水が飲料水として使用されると人体に悪影響を及ぼすことが公表されているように、環境問題が課題となっている。そのため環境への配慮として、例えば回路基板と放熱板との接合において、鉛フリーはんだを用いて接合することが行われるようになってきた。しかしながら、鉛フリーはんだを用いて接合した場合、鉛フリーはんだ自体が硬く脆いため、繰り返し使用するとはんだそのものにクラックが発生するなど、信頼性に欠けるという課題があった。 Conventionally, tin-lead eutectic solder has been mainly used for power modules. However, recently, in the United States, when electronic component waste is left outdoors, the lead contained in the solder on the board reacts easily with acid rain and elutes into groundwater, and this groundwater is used as drinking water. As it has been announced that it has a negative impact on the human body, environmental issues have become an issue. Therefore, as a consideration for the environment, for example, in joining the circuit board and the heat sink, joining using lead-free solder has been performed. However, when the lead-free solder is used for joining, the lead-free solder itself is hard and brittle, so that there is a problem of lack of reliability, such as cracks occurring in the solder itself when used repeatedly.
鉛フリーはんだを用いて接合する場合の信頼性を上げるため、回路パターン及び放熱金属板の材質を銅より柔らかいアルミニウムにすることで、回路基板の信頼性を向上させる方法が提案されている。（特許文献１）しかしながら、この方法でも鉛フリーはんだで接合した場合の信頼性は十分ではなく、新しい技術の提案が待たれていた。
本発明の目的は、上記課題に鑑み、鉛フリーはんだで接合しても優れた信頼性を有するセラミック回路基板およびそれを用いた電力制御部品を提供することである。 In view of the above problems, an object of the present invention is to provide a ceramic circuit board having excellent reliability even when joined with lead-free solder, and a power control component using the same.
即ち、本発明は、セラミック基板にアルミニウム回路及び放熱アルミニウム板を接合してなるセラミック回路基板であって、放熱アルミニウム板が純度の異なる２層のアルミニウム板からなることを特徴とするセラミック回路基板であり、セラミック基板と接合する放熱アルミニウム板の純度が９９．５質量％以上であり、セラミックス基板と接合しない放熱アルミ板の純度が９９．５質量％未満であることを特徴とするセラミック回路基板であり、セラミック基板が窒化アルミニウム基板であり、その厚みが０．５ｍｍ以上であることを特徴とするセラミック回路基板である。 That is, the present invention is a ceramic circuit board obtained by joining an aluminum circuit and a heat radiating aluminum plate to a ceramic substrate, wherein the heat radiating aluminum plate is composed of two layers of aluminum plates having different purity. A ceramic circuit board characterized in that the purity of the heat-dissipating aluminum plate bonded to the ceramic substrate is 99.5% by mass or more, and the purity of the heat-dissipating aluminum plate not bonded to the ceramic substrate is less than 99.5% by mass. The ceramic substrate is an aluminum nitride substrate, and the thickness is 0.5 mm or more.
さらに、前記セラミック回路基板を用いることを特徴とするモジュールであり、鉛フリーはんだを用いて、前記セラミック回路基板の放熱アルミニウム板と放熱板を接合することを特徴とする電力制御部品である。 Furthermore, it is a module characterized by using the ceramic circuit board, and is a power control component characterized by joining the heat radiating aluminum plate and the heat radiating plate of the ceramic circuit board using lead-free solder.
本発明によれば、耐ヒートサイクル性に優れた高い信頼性を有するセラミック回路基板およびそれを用いた電力制御部品が提供される。 ADVANTAGE OF THE INVENTION According to this invention, the ceramic circuit board which is excellent in heat cycle resistance, and has high reliability, and a power control component using the same are provided.
本発明者は、鋭意検討を行った結果、セラミック基板にアルミニウム回路及び放熱アルミニウム板を接合してなるセラミック回路基板において、放熱アルミニウム板を純度の異なる２層のアルミニウム板とすることによって、セラミック基板と接合する放熱アルミニウム板の層がヒートサイクルによる鉛フリーはんだ層の変形を吸収して、応力を緩和することを見いだした。これによって、鉛フリーはんだを用いて接合しても、セラミック基板の信頼性を低下させないことを見いだした。 As a result of diligent study, the present inventor has found that a ceramic circuit board obtained by joining an aluminum circuit and a heat radiating aluminum plate to a ceramic substrate, and the heat radiating aluminum plate is a two-layer aluminum plate having different purity. We found that the layer of heat-dissipating aluminum plate to be bonded with the metal absorbs deformation of the lead-free solder layer due to heat cycle and relieves stress. As a result, it has been found that the reliability of the ceramic substrate is not lowered even when the lead-free solder is used for the bonding.
セラミック回路基板は、エッチング等の処理を行い、回路を形成した後、はんだ付けやワイヤーボンディングが可能なように、アルミニウム板上に、めっき処理が施される。このセラミック回路基板に、半導体素子や、電子部品、放熱板等が取り付けられるか、あるいは鉛フリーはんだを用いて接合され、電力制御部品として使用される。 The ceramic circuit board is subjected to a process such as etching to form a circuit, and then a plating process is performed on the aluminum plate so that soldering and wire bonding are possible. A semiconductor element, an electronic component, a heat sink, or the like is attached to the ceramic circuit board, or is joined using lead-free solder and used as a power control component.
本発明に係るセラミック基板は特に限定されないが、熱伝導性、強度等の観点より、窒化アルミニウム基板の使用が好ましい。また、その厚みは使用目的により異なるが、０．５ｍｍ以上のものが好ましく、０．６〜１ｍｍがより好ましい。 The ceramic substrate according to the present invention is not particularly limited, but an aluminum nitride substrate is preferably used from the viewpoint of thermal conductivity, strength, and the like. Moreover, although the thickness changes with purposes of use, 0.5 mm or more is preferable and 0.6-1 mm is more preferable.
本発明に係るアルミニウム板の厚みは特に限定されず、流れる電流に応じて適宜決められる。一般に、０．１〜０．５ｍｍのものが用いられることが多い。放熱アルミニウム板の純度は、セラミック基板に接合する側が９９．５質量％以上、また、セラミック基板と接合しない側の純度が９９．５質量％未満であること好ましい。
セラミック基板に接合する放熱アルミニウム板の純度が９９．５質量％未満であると鉛フリーはんだ層で発生する応力を十分に吸収することができず、鉛フリーはんだ層でクラックが発生する場合がある。一方、セラミック基板と接合しない放熱アルミニウム板の純度が９９．５質量％以上であると、放熱アルミニウム板の変形に対して、鉛フリーはんだ層が追従できず、クラックが発生してしまう場合がある。さらに回路パターンに用いられるアルミニウム板の純度は、９９質量％以上であることが望ましい。純度が９９質量％より低いと、アルミニウム板とろう材との反応が不十分であったり、アルミニウム板が硬くなりセラミック回路基板の信頼性が低下する場合がある。本発明において、アルミニウムと共存する元素は特に限定されないが、Ｓｉ、Ｆｅ、Ｃｕ、Ｍｎ、Ｍｇ、Ｚｎ、Ｔｉ、のうち一種以上が共存する場合が多い。
The thickness of the aluminum plate according to the present invention is not particularly limited, and is appropriately determined according to the flowing current. In general, a thickness of 0.1 to 0.5 mm is often used. The purity of the heat-dissipating aluminum plate is preferably 99.5% by mass or more on the side bonded to the ceramic substrate, and the purity on the side not bonded to the ceramic substrate is less than 99.5% by mass.
When the purity of the heat-dissipating aluminum plate bonded to the ceramic substrate is less than 99.5% by mass, the stress generated in the lead-free solder layer cannot be sufficiently absorbed, and cracks may occur in the lead-free solder layer. . On the other hand, if the purity of the heat-dissipating aluminum plate not bonded to the ceramic substrate is 99.5% by mass or more, the lead-free solder layer may not follow the deformation of the heat-dissipating aluminum plate, and cracks may occur. . Furthermore, the purity of the aluminum plate used for the circuit pattern is desirably 99% by mass or more. If the purity is lower than 99% by mass, the reaction between the aluminum plate and the brazing material may be insufficient, or the aluminum plate may become hard and the reliability of the ceramic circuit board may be reduced. In the present invention, the element coexisting with aluminum is not particularly limited, but at least one of Si, Fe, Cu, Mn, Mg, Zn, and Ti often coexists.
本発明において、セラミック基板とアルミニウム板の接合は、活性金属ろう付け法が好ましい。
Ｓｉ、Ｍｇ、Ｃｕ、Ａｌ、Ｇｅ、Ａｇ、Ｔｉなどの金属合金がろう材として用いられるが、本発明ではＡｌ−Ｃｕ系合金、Ａｌ合金、Ｃｕ合金、Ｍｇ合金が好ましい。ろう材は、ペースト又は箔として用いられる。
ろう材は、セラミック基板、又は、アルミニウム板もしくは金属回路のどちらに塗布、或いは配置してもよく、合金箔を用いる場合は、予めアルミニウム板と合金箔をクラッド化しておくこともできる。
In the present invention, the active metal brazing method is preferable for joining the ceramic substrate and the aluminum plate.
A metal alloy such as Si, Mg, Cu, Al, Ge, Ag, and Ti is used as the brazing material. In the present invention, an Al—Cu alloy, an Al alloy, a Cu alloy, and an Mg alloy are preferable. The brazing material is used as a paste or foil.
The brazing material may be applied or arranged on either a ceramic substrate, an aluminum plate or a metal circuit. When an alloy foil is used, the aluminum plate and the alloy foil may be clad in advance.
ろう材の塗布量は、乾燥基準で５〜２０ｍｇ／ｃｍ２ が好ましい。塗布量が５ｍｇ／ｃｍ２ 未満では未反応の部分が生じる場合があり、一方、２０ｍｇ／ｃｍ２を超えると、接合層を除去する時間が長くなり生産性が低下する場合がある。塗布方法は特に限定されず、スクリーン印刷法、ロールコーター法等の公知の塗布方法を採用できる。 The coating amount of the brazing material is preferably 5 to 20 mg / cm 2 on a dry basis. If the coating amount is less than 5 mg / cm 2 , an unreacted portion may be generated. On the other hand, if it exceeds 20 mg / cm 2 , the time for removing the bonding layer may become long and productivity may be lowered. The coating method is not particularly limited, and a known coating method such as a screen printing method or a roll coater method can be employed.
本発明において、めっきレジストは特に限定されず、溶剤乾燥タイプインク、ＵＶ硬化タイプインク等が使用できる。塗布方法は特に限定されず、スクリーン印刷法、ロールコーター法等の公知の塗布方法を採用できる。塗布厚は、乾燥後で0.005〜0.07ｍｍの厚みとなるように塗布することが望ましい。厚みが0.005ｍｍより薄いと、部分的にアルミニウムが表出してしまう場合があり、一方、0.07ｍｍより厚いと、めっきレジストの除去に時間がかかり、生産性が低下する場合がある。 In the present invention, the plating resist is not particularly limited, and solvent dry type ink, UV curable type ink, and the like can be used. The coating method is not particularly limited, and a known coating method such as a screen printing method or a roll coater method can be employed. It is desirable that the coating thickness is 0.005 to 0.07 mm after drying. When the thickness is less than 0.005 mm, aluminum may be partially exposed. On the other hand, when the thickness is more than 0.07 mm, it takes time to remove the plating resist, and productivity may be lowered.
めっきレジストの除去方法は特に限定されず、例えば、エタノールやトルエンのような有機溶剤を用いて除去する方法や、アルカリ水溶液に浸浸させる方法が挙げられる。 The method for removing the plating resist is not particularly limited, and examples thereof include a method of removing using an organic solvent such as ethanol and toluene, and a method of immersing in an alkaline aqueous solution.
本発明に係るめっき処理は、特に限定されず、作業性、コスト等の面から、無電解ニッケルめっき、無電解ニッケル金めっき、はんだめっきが好ましい。なお、めっき層の厚みは特に限定されないが、２〜８μｍが望ましい。めっき厚が、２μｍ未満であると、はんだ濡れ性、ワイヤーボンディング特性等の実装特性に悪影響を与える場合がある。一方、めっき厚みが８μｍを超えると、めっき被膜の剥がれ等により基板特性に悪影響を及ぼす場合がある。 The plating treatment according to the present invention is not particularly limited, and electroless nickel plating, electroless nickel gold plating, and solder plating are preferable from the viewpoints of workability and cost. The thickness of the plating layer is not particularly limited, but is preferably 2 to 8 μm. If the plating thickness is less than 2 μm, it may adversely affect mounting characteristics such as solder wettability and wire bonding characteristics. On the other hand, if the plating thickness exceeds 8 μm, the substrate characteristics may be adversely affected due to peeling of the plating film or the like.
セラミック回路基板を製造は、アルミニウム板にエッチングレジストを塗布しエッチングする。エッチングレジストとしては、紫外線硬化型や熱硬化型のものが挙げられる。また、エッチング液としては、塩化第２鉄溶液、塩化第２銅液、硫酸、過酸化水素水等の溶液が使用できるが、好ましいものとして、塩化第２鉄溶液、或いは塩化第２銅溶液が挙げられる。 In manufacturing a ceramic circuit board, an etching resist is applied to an aluminum plate and etched. Examples of the etching resist include an ultraviolet curing type and a thermosetting type. Moreover, as an etching solution, a solution such as a ferric chloride solution, a cupric chloride solution, sulfuric acid, hydrogen peroxide solution, or the like can be used, but preferably a ferric chloride solution or a cupric chloride solution is used. Can be mentioned.
エッチングによって不要な金属部分が除去されたセラミック回路基板には、塗布したろう材、その合金層および窒化物層等が残っているので、ハロゲン化アンモニウム水溶液、硫酸、硝酸等の無機酸、過酸化水素水を含む溶液を用いて、それらを除去するのが一般的である。 Since the applied brazing material, its alloy layer and nitride layer remain on the ceramic circuit board from which unnecessary metal parts have been removed by etching, an aqueous solution of ammonium halide, inorganic acid such as sulfuric acid and nitric acid, peroxidation It is common to remove them using a solution containing hydrogen water.
作製されたセラミック回路基板は、はんだによりベース板や半導体素子等の電子部品と接合される。はんだの種類は特に限定されず、鉛フリーはんだに加えて、通常のスズ−鉛系共晶はんだを用いることも可能である。はんだ付け方法は特に限定されないが、例えば、はんだペーストをスクリーン印刷法等で所定の部分に塗布し、部品等を搭載し、はんだが溶融する所定の温度の炉内にいれることではんだ付けされる。はんだ層は、セラミック回路基板のアルミニウム板側面に接触しない方が、セラミック回路基板の信頼性の点で好ましい。 The produced ceramic circuit board is joined to electronic components such as a base plate and a semiconductor element by soldering. The kind of solder is not particularly limited, and in addition to lead-free solder, a normal tin-lead eutectic solder can also be used. The soldering method is not particularly limited. For example, the solder paste is applied to a predetermined portion by a screen printing method or the like, the component is mounted, and soldered by being placed in a furnace having a predetermined temperature at which the solder melts. . It is preferable in terms of reliability of the ceramic circuit board that the solder layer does not contact the side surface of the aluminum plate of the ceramic circuit board.
本発明に係る鉛フリーはんだは、特に限定されるものではなく、Ｓｎ−Ａｇ−Ｃｕ系、Ｓｎ−Ｃｕ系、Ｓｎ−Ｚｎ系、Ｓｎ−Ｂｉ系、Ｓｎ−Ａｇ系、Ｓｎ−Ａｇ−Ｃｕ−Ｂｉ系、Ｓｎ−Ａｇ−Ｉｎ−Ｂｉ系、Ｓｎ−Ｓｂ系等、公知の組成のものが使用できる。
使用方法は、フラックスを添加してペースト状にした鉛フリーはんだペーストを塗布後、リフローして使用する方法が一般的である。
The lead-free solder according to the present invention is not particularly limited, and is Sn—Ag—Cu, Sn—Cu, Sn—Zn, Sn—Bi, Sn—Ag, Sn—Ag—Cu—. Known compositions such as Bi, Sn-Ag-In-Bi, and Sn-Sb can be used.
The method of use is generally a method of reflowing and applying a lead-free solder paste made into a paste by adding flux.
（実施例１〜６）
厚み０．６３５ｍｍの窒化アルミニウム基板の一主面に回路形成用のアルミニウム板を、反対側の主面には放熱板用の純度の異なる２枚のアルミニウム板を、接合材を介してセットし、クッション材としてカーボンコンポジット板(厚さ２mm)に挟んで、ホットプレス装置により、窒化アルミニウム基板に垂直方向に均等に５ＭＰａで加圧しながら、Ｎ2中で５５０〜６２０℃に加熱し所定温度に達した時点で１５分保持して接合した。この接合体のアルミニウム板上に、めっきレジストをスクリーン印刷法でめっき保護箇所に塗布した後、めっき厚みが５μｍとなるように無電解ニッケルめっきを行った。その後、めっきレジストをエタノールで洗浄して除去し、回路面側の主面に、めっき面と同等かそれより広い所定のエッチングレジストパターンを印刷して、塩化鉄水溶液を用いてエッチングを行い、アルミニウム回路を形成した。放熱板側のアルミニウム板に銅ベース板をはんだ付けし、耐ヒートショック性の評価を行った。結果を表１に示す。
(Examples 1-6)
An aluminum plate for circuit formation is set on one main surface of an aluminum nitride substrate having a thickness of 0.635 mm, and two aluminum plates having different purities for heat sinks are set on the opposite main surface via a bonding material, A carbon composite plate (thickness: 2 mm) was sandwiched as a cushioning material and heated to 550 to 620 ° C. in
〈使用材料〉
窒化アルミニウム基板：電気化学工業社製 商品名「デンカＡＮプレート」
アルミニウム板（回路形成用）： １Ｎ９９（純度：９９．９９質量％）
アルミニウム板（放熱板用）： １Ｎ３０（純度：９９．３質量％）
１０５０（純度：９９．５質量％）
１０８５（純度：９９．８５質量％）
１Ｎ９９（純度：９９．９９質量％）
はんだ：千住金属工業 ソルダーペースト Ｍ７０５−ＰＬＧ−３２−１１
Ｓｎ−３．０Ａｇ−０．５Ｃｕ
接合材：Ａｌ／９．５質量％Ｓｉ／１質量％Ｍｇ合金箔。
めっきレジスト：太陽インキ製造社製 商品名「ＭＡ−８３０」
エッチングレジスト：太陽インキ製造社製 商品名「ＰＥＲ−２７Ｂ−６」
銅ベース板：三昌製作所 材質：Ｃ１０２０Ｒ−１／２Ｈ
〈耐ヒートショック性試験方法〉
ヒートショック試験：−４０゜Ｃ（１０分間）→＋１２５゜Ｃ（１０分間）を１サイクルとして、５００サイクル分実行した、アルミニウム回路基板を各１００枚ずつ試験に供してアルミニウム板の剥離状態を評価した。
Ａ：０〜１０枚剥離 Ｂ：１１〜４０枚剥離 Ｃ：４１枚以上剥離
セラミック基板の割れ：超音波探査装置（日立建機社製商品名「ＡＴ−７０００」を用いてセラミック基板に割れがあるかどうか観察した。
Ａ：０〜１０枚割れ Ｂ：１１〜４０枚割れ Ｂ：４１枚以上割れ
<Materials used>
Aluminum nitride substrate: Denka AN plate, manufactured by Denki Kagaku Kogyo Co., Ltd.
Aluminum plate (for circuit formation): 1N99 (purity: 99.99% by mass)
Aluminum plate (for heat sink): 1N30 (Purity: 99.3% by mass)
1050 (Purity: 99.5% by mass)
1085 (purity: 99.85% by mass)
1N99 (Purity: 99.99% by mass)
Solder: Senju Metal Industry Solder Paste M705-PLG-32-11
Sn-3.0Ag-0.5Cu
Bonding material: Al / 9.5 mass% Si / 1 mass% Mg alloy foil.
Plating resist: Product name “MA-830” manufactured by Taiyo Ink Manufacturing Co., Ltd.
Etching resist: Trade name “PER-27B-6” manufactured by Taiyo Ink Manufacturing Co., Ltd.
Copper base plate: Sansho Seisakusho Material: C1020R-1 / 2H
<Test method for heat shock resistance>
Heat shock test: -40 ° C (10 minutes) → + 125 ° C (10 minutes) as one cycle, executed for 500 cycles, 100 aluminum circuit boards were used for each test, and the peeling state of the aluminum plate was evaluated. did.
A: 0 to 10 sheets peeled B: 11 to 40 sheets peeled C: 41 sheets or more peeled ceramic substrate cracking: Ultrasonic probe (trade name “AT-7000” manufactured by Hitachi Construction Machinery Co., Ltd.) used to crack the ceramic substrate Observed whether there was.
A: 0-10 breaks B: 11-40 breaks B: 41 breaks or more
（実施例７〜９）
セラミック基板の厚みを０．４ｍｍにしたこと（実施例７）、セラミック基板の厚みを０．５ｍｍにしたこと（実施例８）、セラミック基板の厚みを１．０ｍｍにしたこと（実施例９）以外は実施例１と同様にアルミニウム回路基板を作製し評価を行った。結果を表１に示す。
(Examples 7 to 9)
The thickness of the ceramic substrate was 0.4 mm (Example 7), the thickness of the ceramic substrate was 0.5 mm (Example 8), and the thickness of the ceramic substrate was 1.0 mm (Example 9). Except for the above, an aluminum circuit board was prepared and evaluated in the same manner as in Example 1. The results are shown in Table 1.
（実施例１０）
セラミック基板を窒化珪素製基板（電気化学工業社製 商品名「デンカＳＮプレート」）に変えたこと以外は、実施例１と同様にアルミニウム回路基板を作製し評価を行った。結果を表１に示す。
(Example 10)
An aluminum circuit board was produced and evaluated in the same manner as in Example 1 except that the ceramic substrate was changed to a silicon nitride substrate (trade name “DENKA SN plate” manufactured by Denki Kagaku Kogyo Co., Ltd.). The results are shown in Table 1.
（比較例１，２）
放熱板を一層のアルミニウム板にしたこと以外は実施例１と同様にアルミニウム回路基板を作製し評価を行った。結果を表１に示す。
(Comparative Examples 1 and 2)
An aluminum circuit board was produced and evaluated in the same manner as in Example 1 except that the heat radiating plate was a single aluminum plate. The results are shown in Table 1.
１ セラミック基板
２ 銅ベース板
３ はんだ層（鉛フリーはんだ層）
４ 回路アルミニウム板
５ 放熱アルミニウム板（１層）
６ 放熱アルミニウム板（２層）
1
4
6 Heat dissipation aluminum plate (2 layers)
Claims (5)
A power control component, wherein the heat dissipation aluminum plate and the heat dissipation plate of the ceramic circuit board according to any one of claims 1 to 3 are joined using lead-free solder.
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