JP6193271B2 - 結晶半導体材料の薄層を設ける方法、ならびに関連する構造体およびデバイス - Google Patents
結晶半導体材料の薄層を設ける方法、ならびに関連する構造体およびデバイス Download PDFInfo
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- JP6193271B2 JP6193271B2 JP2014558222A JP2014558222A JP6193271B2 JP 6193271 B2 JP6193271 B2 JP 6193271B2 JP 2014558222 A JP2014558222 A JP 2014558222A JP 2014558222 A JP2014558222 A JP 2014558222A JP 6193271 B2 JP6193271 B2 JP 6193271B2
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- 238000000034 method Methods 0.000 title claims description 143
- 239000004065 semiconductor Substances 0.000 title claims description 53
- 239000000463 material Substances 0.000 title description 35
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 212
- 229910052751 metal Inorganic materials 0.000 claims description 144
- 239000002184 metal Substances 0.000 claims description 144
- 229910021332 silicide Inorganic materials 0.000 claims description 126
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 125
- 238000005530 etching Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 48
- 229910021645 metal ion Inorganic materials 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000007517 polishing process Methods 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 238000009499 grossing Methods 0.000 claims description 5
- 238000009966 trimming Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- 239000012212 insulator Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- -1 etc.) Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001429 cobalt ion Inorganic materials 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
Claims (14)
- 半導体デバイスを製作する方法であって、
結晶シリコンの層を受容構造体上に設けるステップと、
前記結晶シリコンの層の露出した主表面に隣接する前記結晶シリコンの一部分に金属シリサイドを形成するステップと、
前記結晶シリコンと比べて前記金属シリサイドに対して選択的であるエッチング液を使用して前記金属シリサイドをエッチングするステップと
を含み、
前記金属シリサイドをエッチングするステップは、前記金属シリサイドを少なくとも実質的に除去し、前記結晶シリコンの表面を露出させるステップを含み、
前記方法は、
湿式洗浄プロセス、化学機械研磨プロセス、プラズマ洗浄プロセスおよびイオントリミングプロセスのうちの1つまたは複数を使用して前記結晶シリコンの表面を平滑化するステップをさらに含むことを特徴とする方法。 - 半導体デバイスを製作する方法であって、
結晶シリコンの層を受容構造体上に設けるステップと、
前記結晶シリコンの層の露出した主表面に隣接する前記結晶シリコンの一部分に金属シリサイドを形成するステップと、
前記結晶シリコンと比べて前記金属シリサイドに対して選択的であるエッチング液を使用して前記金属シリサイドをエッチングするステップと、
前記金属シリサイドをエッチングした後に約2.0nm以下の平均表面粗さRaを前記結晶シリコンの層の前記露出した主表面に与えるステップと、
を含むことを特徴とする方法。 - 前記結晶シリコンの層を前記受容構造体上に設けるステップは、前記結晶シリコンの層をドナー構造体から前記受容構造体に転写するステップを含むことを特徴とする請求項1又は2に記載の方法。
- 能動デバイス構造体を含むように前記結晶シリコンの層を選択するステップをさらに含むことを特徴とする請求項3に記載の方法。
- 前記結晶シリコンの層の前記露出した主表面に隣接する前記結晶シリコンの前記一部分に前記金属シリサイドを形成するステップは、
前記結晶シリコンの層の前記露出した主表面の上に金属を堆積させるステップと、
前記堆積された金属および前記結晶シリコンの層をアニールして、前記金属シリサイドを形成するステップと
を含むことを特徴とする請求項1又は2に記載の方法。 - 前記結晶シリコンの層の前記露出した主表面に隣接する前記結晶シリコンの前記一部分に前記金属シリサイドを形成するステップは、金属イオンを前記結晶シリコンに注入して、前記金属シリサイドを形成するステップを含むことを特徴とする請求項1又は2に記載の方法。
- チタン、ニッケル、コバルトおよびタングステンのうちの少なくとも1つを含むように前記金属イオンを選択するステップをさらに含むことを特徴とする請求項6に記載の方法。
- 前記結晶シリコンの前記一部分に前記金属シリサイドを形成するステップは、約700℃以下の温度で前記結晶シリコンの前記一部分に前記金属シリサイドを形成するステップを含むことを特徴とする請求項1又は2に記載の方法。
- 前記金属シリサイドをエッチングするステップは、湿式エッチングプロセス、乾式エッチングプロセスおよび電気化学エッチングプロセスのうちの1つまたは複数を使用して前記金属シリサイドをエッチングするステップを含むことを特徴とする請求項1又は2に記載の方法。
- 前記金属シリサイドをエッチングするステップは、摂氏約100度(100℃)以下の温度で前記金属シリサイドをエッチングするステップを含むことを特徴とする請求項1又は2に記載の方法。
- 前記結晶シリコンと比べて前記金属シリサイドに対して選択的である前記エッチング液を使用して前記金属シリサイドをエッチングするステップは、前記金属シリサイドをHFでエッチングするステップを含むことを特徴とする請求項1又は2に記載の方法。
- 前記結晶シリコン、前記受容構造体およびそれらの間の誘電体層を含むSOI型基板を形成するステップをさらに含むことを特徴とする請求項1又は2に記載の方法。
- 前記結晶シリコンを含む電子信号プロセッサ、メモリデバイス、発光ダイオード、レーザダイオードおよびフォトセルのうちの1つまたは複数を形成するステップをさらに含むことを特徴とする請求項1又は2に記載の方法。
- 前記金属シリサイドをエッチングした後に約100nm以下の平均層厚を有するように前記結晶シリコンの層を形成するステップをさらに含むことを特徴とする請求項1又は2に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US13/402,464 US9136134B2 (en) | 2012-02-22 | 2012-02-22 | Methods of providing thin layers of crystalline semiconductor material, and related structures and devices |
US13/402,464 | 2012-02-22 | ||
FR1252148 | 2012-03-09 | ||
FR1252148A FR2987936B1 (fr) | 2012-03-09 | 2012-03-09 | Procedes de fabrication de fines couches de materiau semi-conducteur cristallin, et structures et dispositifs connexes |
PCT/IB2013/000139 WO2013124719A1 (en) | 2012-02-22 | 2013-02-01 | Methods of providing thin layers of crystalline semiconductor material, and related structures and devices |
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JP2015515122A JP2015515122A (ja) | 2015-05-21 |
JP6193271B2 true JP6193271B2 (ja) | 2017-09-06 |
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JP (1) | JP6193271B2 (ja) |
KR (1) | KR102031725B1 (ja) |
CN (1) | CN104115259B (ja) |
SG (1) | SG11201404576TA (ja) |
TW (1) | TWI588886B (ja) |
WO (1) | WO2013124719A1 (ja) |
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WO2023234368A1 (ja) * | 2022-06-02 | 2023-12-07 | セントラル硝子株式会社 | 基材の処理方法、および基材の製造方法 |
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US5223081A (en) * | 1991-07-03 | 1993-06-29 | Doan Trung T | Method for roughening a silicon or polysilicon surface for a semiconductor substrate |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP3187498B2 (ja) * | 1992-01-27 | 2001-07-11 | 株式会社東芝 | 半導体装置 |
JPH07254574A (ja) * | 1994-03-16 | 1995-10-03 | Sony Corp | 電極形成方法 |
KR100199064B1 (ko) * | 1995-10-17 | 1999-07-01 | 구자홍 | 박막 트랜지스터 제조방법 |
FR2755537B1 (fr) | 1996-11-05 | 1999-03-05 | Commissariat Energie Atomique | Procede de fabrication d'un film mince sur un support et structure ainsi obtenue |
FR2767416B1 (fr) | 1997-08-12 | 1999-10-01 | Commissariat Energie Atomique | Procede de fabrication d'un film mince de materiau solide |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
FR2795865B1 (fr) | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | Procede de realisation d'un film mince utilisant une mise sous pression |
FR2818010B1 (fr) | 2000-12-08 | 2003-09-05 | Commissariat Energie Atomique | Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses |
US7256104B2 (en) * | 2003-05-21 | 2007-08-14 | Canon Kabushiki Kaisha | Substrate manufacturing method and substrate processing apparatus |
FR2855908B1 (fr) * | 2003-06-06 | 2005-08-26 | Soitec Silicon On Insulator | Procede d'obtention d'une structure comprenant au moins un substrat et une couche ultramince |
WO2006117900A1 (ja) * | 2005-04-26 | 2006-11-09 | Sharp Kabushiki Kaisha | 半導体装置の製造方法及び半導体装置 |
CN101351892B (zh) * | 2005-11-29 | 2012-06-27 | 夏普株式会社 | 半导体器件和制造该半导体器件的方法 |
JP4380709B2 (ja) * | 2007-01-31 | 2009-12-09 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
KR100875432B1 (ko) * | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
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2013
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- 2013-02-01 CN CN201380009416.3A patent/CN104115259B/zh active Active
- 2013-02-01 WO PCT/IB2013/000139 patent/WO2013124719A1/en active Application Filing
- 2013-02-01 JP JP2014558222A patent/JP6193271B2/ja active Active
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KR20140129116A (ko) | 2014-11-06 |
CN104115259B (zh) | 2017-03-22 |
TW201347033A (zh) | 2013-11-16 |
KR102031725B1 (ko) | 2019-10-14 |
JP2015515122A (ja) | 2015-05-21 |
SG11201404576TA (en) | 2014-10-30 |
TWI588886B (zh) | 2017-06-21 |
WO2013124719A1 (en) | 2013-08-29 |
CN104115259A (zh) | 2014-10-22 |
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