SG11201404576TA - Methods of providing thin layers of crystalline semiconductor material, and related structures and devices - Google Patents
Methods of providing thin layers of crystalline semiconductor material, and related structures and devicesInfo
- Publication number
- SG11201404576TA SG11201404576TA SG11201404576TA SG11201404576TA SG11201404576TA SG 11201404576T A SG11201404576T A SG 11201404576TA SG 11201404576T A SG11201404576T A SG 11201404576TA SG 11201404576T A SG11201404576T A SG 11201404576TA SG 11201404576T A SG11201404576T A SG 11201404576TA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- devices
- semiconductor material
- crystalline semiconductor
- thin layers
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/402,464 US9136134B2 (en) | 2012-02-22 | 2012-02-22 | Methods of providing thin layers of crystalline semiconductor material, and related structures and devices |
FR1252148A FR2987936B1 (fr) | 2012-03-09 | 2012-03-09 | Procedes de fabrication de fines couches de materiau semi-conducteur cristallin, et structures et dispositifs connexes |
PCT/IB2013/000139 WO2013124719A1 (en) | 2012-02-22 | 2013-02-01 | Methods of providing thin layers of crystalline semiconductor material, and related structures and devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201404576TA true SG11201404576TA (en) | 2014-10-30 |
Family
ID=47901230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404576TA SG11201404576TA (en) | 2012-02-22 | 2013-02-01 | Methods of providing thin layers of crystalline semiconductor material, and related structures and devices |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP6193271B2 (ja) |
KR (1) | KR102031725B1 (ja) |
CN (1) | CN104115259B (ja) |
SG (1) | SG11201404576TA (ja) |
TW (1) | TWI588886B (ja) |
WO (1) | WO2013124719A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112382555B (zh) * | 2020-11-12 | 2024-07-19 | 广东先导微电子科技有限公司 | 一种磷化铟衬底的清洗方法 |
WO2023234368A1 (ja) * | 2022-06-02 | 2023-12-07 | セントラル硝子株式会社 | 基材の処理方法、および基材の製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5223081A (en) * | 1991-07-03 | 1993-06-29 | Doan Trung T | Method for roughening a silicon or polysilicon surface for a semiconductor substrate |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP3187498B2 (ja) * | 1992-01-27 | 2001-07-11 | 株式会社東芝 | 半導体装置 |
JPH07254574A (ja) * | 1994-03-16 | 1995-10-03 | Sony Corp | 電極形成方法 |
KR100199064B1 (ko) * | 1995-10-17 | 1999-07-01 | 구자홍 | 박막 트랜지스터 제조방법 |
FR2755537B1 (fr) | 1996-11-05 | 1999-03-05 | Commissariat Energie Atomique | Procede de fabrication d'un film mince sur un support et structure ainsi obtenue |
FR2767416B1 (fr) | 1997-08-12 | 1999-10-01 | Commissariat Energie Atomique | Procede de fabrication d'un film mince de materiau solide |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
FR2795865B1 (fr) | 1999-06-30 | 2001-08-17 | Commissariat Energie Atomique | Procede de realisation d'un film mince utilisant une mise sous pression |
FR2818010B1 (fr) | 2000-12-08 | 2003-09-05 | Commissariat Energie Atomique | Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses |
US7256104B2 (en) * | 2003-05-21 | 2007-08-14 | Canon Kabushiki Kaisha | Substrate manufacturing method and substrate processing apparatus |
FR2855908B1 (fr) * | 2003-06-06 | 2005-08-26 | Soitec Silicon On Insulator | Procede d'obtention d'une structure comprenant au moins un substrat et une couche ultramince |
WO2006117900A1 (ja) * | 2005-04-26 | 2006-11-09 | Sharp Kabushiki Kaisha | 半導体装置の製造方法及び半導体装置 |
TW200733386A (en) * | 2005-11-29 | 2007-09-01 | Sharp Kk | Semiconductor device |
JP4380709B2 (ja) * | 2007-01-31 | 2009-12-09 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
KR100875432B1 (ko) * | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
-
2013
- 2013-02-01 SG SG11201404576TA patent/SG11201404576TA/en unknown
- 2013-02-01 WO PCT/IB2013/000139 patent/WO2013124719A1/en active Application Filing
- 2013-02-01 CN CN201380009416.3A patent/CN104115259B/zh active Active
- 2013-02-01 JP JP2014558222A patent/JP6193271B2/ja active Active
- 2013-02-01 KR KR1020147024957A patent/KR102031725B1/ko active IP Right Grant
- 2013-02-22 TW TW102106329A patent/TWI588886B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2015515122A (ja) | 2015-05-21 |
JP6193271B2 (ja) | 2017-09-06 |
KR20140129116A (ko) | 2014-11-06 |
TW201347033A (zh) | 2013-11-16 |
WO2013124719A1 (en) | 2013-08-29 |
KR102031725B1 (ko) | 2019-10-14 |
TWI588886B (zh) | 2017-06-21 |
CN104115259A (zh) | 2014-10-22 |
CN104115259B (zh) | 2017-03-22 |
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