JP6181075B2 - 原子水素を用いて基板表面を洗浄するための方法及び装置 - Google Patents

原子水素を用いて基板表面を洗浄するための方法及び装置 Download PDF

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JP6181075B2
JP6181075B2 JP2014548941A JP2014548941A JP6181075B2 JP 6181075 B2 JP6181075 B2 JP 6181075B2 JP 2014548941 A JP2014548941 A JP 2014548941A JP 2014548941 A JP2014548941 A JP 2014548941A JP 6181075 B2 JP6181075 B2 JP 6181075B2
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Prior art keywords
substrate
chamber
hydrogen
filaments
gas
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Expired - Fee Related
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Japanese (ja)
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JP2015503841A5 (enExample
JP2015503841A (ja
Inventor
クルーズ， ジョー グリフィス
クルーズ， ジョー グリフィス
チョンウォン パク，
チョンウォン パク，
プラビン ケー． ナーワンカー，
プラビン ケー． ナーワンカー，
ネイト シー グエン，
ネイト シー グエン，
ハン グエン，
ハン グエン，
トゥー チャン，
トゥー チャン，
チンチン シュウ，
チンチン シュウ，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014548941A 2011-12-23 2012-12-21 原子水素を用いて基板表面を洗浄するための方法及び装置 Expired - Fee Related JP6181075B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161579830P 2011-12-23 2011-12-23
US61/579,830 2011-12-23
US13/723,409 US20130160794A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
US13/723,409 2012-12-21
PCT/US2012/071202 WO2013096748A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Publications (3)

Publication Number Publication Date
JP2015503841A JP2015503841A (ja) 2015-02-02
JP2015503841A5 JP2015503841A5 (enExample) 2016-02-12
JP6181075B2 true JP6181075B2 (ja) 2017-08-16

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JP2014548941A Expired - Fee Related JP6181075B2 (ja) 2011-12-23 2012-12-21 原子水素を用いて基板表面を洗浄するための方法及び装置

Country Status (6)

Country Link
US (2) US20130160794A1 (enExample)
JP (1) JP6181075B2 (enExample)
KR (1) KR20140107580A (enExample)
CN (1) CN104025264B (enExample)
SG (2) SG11201403005TA (enExample)
WO (1) WO2013096748A1 (enExample)

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US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
WO2014149962A1 (en) 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus for coupling a hot wire source to a process chamber
CN110098138B (zh) 2013-09-25 2023-07-18 Ev 集团 E·索尔纳有限责任公司 用于结合基板的装置及方法
DE112014006932T5 (de) * 2014-09-08 2017-06-01 Mitsubishi Electric Corporation Halbleitertempervorrichtung
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
JP6690915B2 (ja) 2014-10-06 2020-04-28 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 極低温流体混合物で基板を処理するシステムおよび方法
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
US20160138161A1 (en) * 2014-11-19 2016-05-19 Applied Materials, Inc. Radical assisted cure of dielectric films
CN104865700B (zh) * 2015-04-29 2017-07-14 中国科学院长春光学精密机械与物理研究所 光学元件表面碳污染的ArH清洗方法
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
CN107026100A (zh) * 2016-02-01 2017-08-08 中芯国际集成电路制造(上海)有限公司 半导体制造设备以及制造方法
US10116255B2 (en) 2016-06-22 2018-10-30 Solar Maid Of Northern Arizona Llc Cleaning system for solar panels
US10513778B2 (en) 2017-09-22 2019-12-24 Applied Materials, Inc. Native or uncontrolled oxide reduction by HWCVD H* using specific metal chamber liner
WO2019199681A1 (en) 2018-04-09 2019-10-17 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto
US11430661B2 (en) * 2018-12-28 2022-08-30 Applied Materials, Inc. Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition
CN114220721B (zh) * 2021-12-14 2025-02-11 深圳市荣者光电科技发展有限公司 一种GaAs光电阴极原子级洁净度的获得方法

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Also Published As

Publication number Publication date
KR20140107580A (ko) 2014-09-04
WO2013096748A1 (en) 2013-06-27
SG11201403005TA (en) 2014-09-26
US20130160794A1 (en) 2013-06-27
CN104025264A (zh) 2014-09-03
JP2015503841A (ja) 2015-02-02
US20150311061A1 (en) 2015-10-29
SG10201605000PA (en) 2016-08-30
CN104025264B (zh) 2017-09-12

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