SG11201403005TA - Methods and apparatus for cleaning substrate surfaces with atomic hydrogen - Google Patents

Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Info

Publication number
SG11201403005TA
SG11201403005TA SG11201403005TA SG11201403005TA SG11201403005TA SG 11201403005T A SG11201403005T A SG 11201403005TA SG 11201403005T A SG11201403005T A SG 11201403005TA SG 11201403005T A SG11201403005T A SG 11201403005TA SG 11201403005T A SG11201403005T A SG 11201403005TA
Authority
SG
Singapore
Prior art keywords
methods
substrate surfaces
atomic hydrogen
cleaning substrate
cleaning
Prior art date
Application number
SG11201403005TA
Inventor
Cruz Joe Griffith
Jeongwon Park
Pravin K Narwankar
Nate Si Nguyen
Hanh Nguyen
To Chan
Jingjing Xu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201403005TA publication Critical patent/SG11201403005TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201403005TA 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen SG11201403005TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161579830P 2011-12-23 2011-12-23
PCT/US2012/071202 WO2013096748A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
US13/723,409 US20130160794A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Publications (1)

Publication Number Publication Date
SG11201403005TA true SG11201403005TA (en) 2014-09-26

Family

ID=48653348

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201403005TA SG11201403005TA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
SG10201605000PA SG10201605000PA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201605000PA SG10201605000PA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Country Status (6)

Country Link
US (2) US20130160794A1 (en)
JP (1) JP6181075B2 (en)
KR (1) KR20140107580A (en)
CN (1) CN104025264B (en)
SG (2) SG11201403005TA (en)
WO (1) WO2013096748A1 (en)

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US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
CN205177785U (en) 2013-03-14 2016-04-20 应用材料公司 Handle cavity and be used for being coupled to hot line source device of this processing cavity
KR102420245B1 (en) 2013-09-25 2022-07-13 에베 그룹 에. 탈너 게엠베하 Apparatus and method for bonding substrates
JPWO2016038664A1 (en) * 2014-09-08 2017-04-27 三菱電機株式会社 Semiconductor annealing equipment
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
TWI685876B (en) 2014-10-06 2020-02-21 美商東京威力科創Ｆｓｉ股份有限公司 Systems and methods for treating substrates with cryogenic fluid mixtures
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
US20160138161A1 (en) * 2014-11-19 2016-05-19 Applied Materials, Inc. Radical assisted cure of dielectric films
CN104865700B (en) * 2015-04-29 2017-07-14 中国科学院长春光学精密机械与物理研究所 The ArH cleaning methods of optical element surface carbon pollution
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
CN107026100A (en) * 2016-02-01 2017-08-08 中芯国际集成电路制造(上海)有限公司 Semiconductor manufacturing facility and manufacture method
US10116255B2 (en) 2016-06-22 2018-10-30 Solar Maid Of Northern Arizona Llc Cleaning system for solar panels
US10513778B2 (en) 2017-09-22 2019-12-24 Applied Materials, Inc. Native or uncontrolled oxide reduction by HWCVD H* using specific metal chamber liner
CN111954921B (en) 2018-04-09 2024-05-31 应用材料公司 Carbon hard mask for patterning applications and related methods
CN114220721A (en) * 2021-12-14 2022-03-22 深圳市荣者光电科技发展有限公司 Method for obtaining atomic-level cleanliness of GaAs photocathode

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US5409543A (en) * 1992-12-22 1995-04-25 Sandia Corporation Dry soldering with hot filament produced atomic hydrogen
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
JPH09190979A (en) * 1996-01-10 1997-07-22 Nec Corp Selective silicon epitaxial growth method, and growth device
US6395099B1 (en) * 1999-02-08 2002-05-28 Micron Technology Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
JP4459329B2 (en) * 1999-08-05 2010-04-28 キヤノンアネルバ株式会社 Method and apparatus for removing attached film
US20020104481A1 (en) * 2000-12-06 2002-08-08 Chiang Tony P. System and method for modulated ion-induced atomic layer deposition (MII-ALD)
KR20020083767A (en) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 Method for cleaning substrate in selective epitaxial growth process
US6529686B2 (en) * 2001-06-06 2003-03-04 Fsi International, Inc. Heating member for combination heating and chilling apparatus, and methods
KR101276694B1 (en) * 2003-02-14 2013-06-19 어플라이드 머티어리얼스, 인코포레이티드 Cleaning of native oxide with hydrogen-containing radicals
JP4652841B2 (en) * 2005-02-21 2011-03-16 キヤノンアネルバ株式会社 Hydrogen atom generation source and hydrogen atom transport method in vacuum processing apparatus
JP2006279008A (en) * 2005-03-02 2006-10-12 Ushio Inc Heater and heating apparatus having the same
US20080078325A1 (en) * 2006-09-29 2008-04-03 Tokyo Electron Limited Processing system containing a hot filament hydrogen radical source for integrated substrate processing
JP5024765B2 (en) * 2007-01-30 2012-09-12 株式会社フジクラ Method for cleaning oxide substrate and method for manufacturing oxide semiconductor thin film
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
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KR20140097574A (en) * 2007-11-06 2014-08-06 칼 짜이스 에스엠티 게엠베하 Method for removing a contamination layer from an optical surface, method for generating a cleaning gas, and corresponding cleaning and cleaning gas generation arrangements
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US9139910B2 (en) * 2010-06-11 2015-09-22 Tokyo Electron Limited Method for chemical vapor deposition control

Also Published As

Publication number Publication date
CN104025264B (en) 2017-09-12
US20130160794A1 (en) 2013-06-27
KR20140107580A (en) 2014-09-04
CN104025264A (en) 2014-09-03
US20150311061A1 (en) 2015-10-29
JP2015503841A (en) 2015-02-02
JP6181075B2 (en) 2017-08-16
SG10201605000PA (en) 2016-08-30
WO2013096748A1 (en) 2013-06-27

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