JP2015503841A - 原子水素を用いて基板表面を洗浄するための方法及び装置 - Google Patents
原子水素を用いて基板表面を洗浄するための方法及び装置 Download PDFInfo
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- JP2015503841A JP2015503841A JP2014548941A JP2014548941A JP2015503841A JP 2015503841 A JP2015503841 A JP 2015503841A JP 2014548941 A JP2014548941 A JP 2014548941A JP 2014548941 A JP2014548941 A JP 2014548941A JP 2015503841 A JP2015503841 A JP 2015503841A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 基板の表面を洗浄する方法であって、
その中に配置された複数のフィラメントを有する第1のチャンバに水素含有ガスを供給することと、
前記複数のフィラメントの中に電流を流し、前記複数のフィラメントの温度を前記水素含有ガスの少なくとも一部を分解するのに十分なプロセス温度まで上昇させることと、
分解された前記水素含有ガスから形成された水素原子に前記基板を暴露することによって前記基板の前記表面を洗浄することとを含む、方法。 - 前記水素含有ガスは、水素(H2)、水素(H2)及び窒素(N2)、又はアンモニア(NH3)を含む、請求項1に記載の方法。
- 予熱チャンバとは異なる洗浄チャンバ内で前記基板の前記表面を洗浄する前に、前記予熱チャンバ内で前記基板を予熱すること、又は
洗浄チャンバ内で前記基板の前記表面を洗浄する前に、前記洗浄チャンバ内で前記基板を予熱することのうちの1つを更に含む、請求項1に記載の方法。 - 前記第1のチャンバは、前記基板表面が洗浄されるのと同じチャンバであるか、又は前記第1のチャンバは、前記基板表面が洗浄されるのとは異なるチャンバであり、前記第1のチャンバ内で形成される前記水素原子は、前記基板表面が洗浄される前記チャンバに供給される、請求項1から3のいずれか一項に記載の方法。
- 前記水素含有ガスを前記第1のチャンバに供給する前に、
水素含有予備処理ガスを前記第1のチャンバに供給し、
前記複数のフィラメントを第1の予備処理温度まで加熱し、
前記複数のフィラメントを第2の予備処理温度まで冷却することによって、前記複数のフィラメントを予備処理することを更に含む、請求項1から3のいずれか一項に記載の方法。 - 前記水素含有予備処理ガスは、水素(H2)ガス、水素(H2)及び窒素(N2)、又はアンモニア(NH3)を含む、請求項5に記載の方法。
- 前記複数のフィラメントを前記第1の予備処理温度まで加熱することと、前記複数のフィラメントを前記第2の予備処理温度まで冷却することとを繰り返すことを更に含む、請求項5に記載の方法。
- 基板洗浄システムであって、
内部容積空間を有するプロセスチャンバと、
前記プロセスチャンバの前記内部容積空間内に配置され、前記プロセスチャンバ内で洗浄される基板を支持する基板支持体と、
動作中に前記基板の表面に原子水素を供給するように構成される原子水素源であって、複数のフィラメントと、前記複数のフィラメントを水素ガスから原子水素を生成するのに十分な温度まで加熱するために、前記複数のフィラメントを電源に結合する端子とを備える、原子水素源と、
前記原子水素源に結合され、前記原子水素源に水素ガスを供給する水素ガス源とを備える、基板洗浄システム。 - 前記原子水素源によって供給される原子水素がガス分配プレートを通り抜け、前記プロセスチャンバの前記内部容積空間に達するように、前記原子水素源と前記プロセスチャンバの前記内部容積空間との間に配置される前記ガス分配プレートを更に備える、請求項8に記載の基板洗浄システム。
- 前記原子水素源は前記プロセスチャンバから離れている、請求項8に記載の基板洗浄システム。
- 前記原子水素源は前記プロセスチャンバ内に配置される、請求項8に記載の基板洗浄システム。
- 前記原子水素源は前記プロセスチャンバに取外し可能に結合可能であるプロセスチャンバ蓋内に組み込まれる、請求項8に記載の基板洗浄システム。
- 前記プロセスチャンバ蓋は、
本体であって、前記本体の下面内に形成された凹部を有し、前記凹部内に前記複数のフィラメントが配置される、本体と、
前記複数のフィラメントの上方に配置され、前記複数のフィラメントに前記水素ガスを供給するガス注入口と、
前記複数のフィラメントの下で前記本体に結合されるガス分配プレートであって、前記ガス分配プレートは前記凹部を前記内部容積空間に流体結合するための複数の穴を有する、ガス分配プレートとを備える、請求項12に記載の基板洗浄システム。 - 前記プロセスチャンバ蓋は、前記凹部の内面上に配置されるライナを更に備える、請求項13に記載の基板洗浄システム。
- 前記複数のフィラメントは、タンタル(Ta)、タングステン(W)又はイリジウム(Ir)、及び任意でシリコン(Si)ドーパントを含む、請求項8に記載の基板洗浄システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161579830P | 2011-12-23 | 2011-12-23 | |
US61/579,830 | 2011-12-23 | ||
PCT/US2012/071202 WO2013096748A1 (en) | 2011-12-23 | 2012-12-21 | Methods and apparatus for cleaning substrate surfaces with atomic hydrogen |
US13/723,409 US20130160794A1 (en) | 2011-12-23 | 2012-12-21 | Methods and apparatus for cleaning substrate surfaces with atomic hydrogen |
US13/723,409 | 2012-12-21 |
Publications (3)
Publication Number | Publication Date |
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JP2015503841A true JP2015503841A (ja) | 2015-02-02 |
JP2015503841A5 JP2015503841A5 (ja) | 2016-02-12 |
JP6181075B2 JP6181075B2 (ja) | 2017-08-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014548941A Expired - Fee Related JP6181075B2 (ja) | 2011-12-23 | 2012-12-21 | 原子水素を用いて基板表面を洗浄するための方法及び装置 |
Country Status (6)
Country | Link |
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US (2) | US20130160794A1 (ja) |
JP (1) | JP6181075B2 (ja) |
KR (1) | KR20140107580A (ja) |
CN (1) | CN104025264B (ja) |
SG (2) | SG11201403005TA (ja) |
WO (1) | WO2013096748A1 (ja) |
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CN104865700B (zh) * | 2015-04-29 | 2017-07-14 | 中国科学院长春光学精密机械与物理研究所 | 光学元件表面碳污染的ArH清洗方法 |
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CN114220721A (zh) * | 2021-12-14 | 2022-03-22 | 深圳市荣者光电科技发展有限公司 | 一种GaAs光电阴极原子级洁净度的获得方法 |
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Also Published As
Publication number | Publication date |
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SG11201403005TA (en) | 2014-09-26 |
CN104025264B (zh) | 2017-09-12 |
JP6181075B2 (ja) | 2017-08-16 |
CN104025264A (zh) | 2014-09-03 |
WO2013096748A1 (en) | 2013-06-27 |
US20130160794A1 (en) | 2013-06-27 |
SG10201605000PA (en) | 2016-08-30 |
US20150311061A1 (en) | 2015-10-29 |
KR20140107580A (ko) | 2014-09-04 |
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