JP2015503841A5 - - Google Patents
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- Publication number
- JP2015503841A5 JP2015503841A5 JP2014548941A JP2014548941A JP2015503841A5 JP 2015503841 A5 JP2015503841 A5 JP 2015503841A5 JP 2014548941 A JP2014548941 A JP 2014548941A JP 2014548941 A JP2014548941 A JP 2014548941A JP 2015503841 A5 JP2015503841 A5 JP 2015503841A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- hydrogen
- filaments
- chamber
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 22
- 238000000034 method Methods 0.000 claims 19
- 238000004140 cleaning Methods 0.000 claims 17
- 239000007789 gas Substances 0.000 claims 13
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 11
- 239000001257 hydrogen Substances 0.000 claims 11
- 229910052739 hydrogen Inorganic materials 0.000 claims 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- 150000002431 hydrogen Chemical class 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161579830P | 2011-12-23 | 2011-12-23 | |
| US61/579,830 | 2011-12-23 | ||
| US13/723,409 US20130160794A1 (en) | 2011-12-23 | 2012-12-21 | Methods and apparatus for cleaning substrate surfaces with atomic hydrogen |
| US13/723,409 | 2012-12-21 | ||
| PCT/US2012/071202 WO2013096748A1 (en) | 2011-12-23 | 2012-12-21 | Methods and apparatus for cleaning substrate surfaces with atomic hydrogen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015503841A JP2015503841A (ja) | 2015-02-02 |
| JP2015503841A5 true JP2015503841A5 (enExample) | 2016-02-12 |
| JP6181075B2 JP6181075B2 (ja) | 2017-08-16 |
Family
ID=48653348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014548941A Expired - Fee Related JP6181075B2 (ja) | 2011-12-23 | 2012-12-21 | 原子水素を用いて基板表面を洗浄するための方法及び装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20130160794A1 (enExample) |
| JP (1) | JP6181075B2 (enExample) |
| KR (1) | KR20140107580A (enExample) |
| CN (1) | CN104025264B (enExample) |
| SG (2) | SG11201403005TA (enExample) |
| WO (1) | WO2013096748A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120312326A1 (en) * | 2011-06-10 | 2012-12-13 | Applied Materials, Inc. | Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber |
| US9416450B2 (en) * | 2012-10-24 | 2016-08-16 | Applied Materials, Inc. | Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber |
| WO2014149962A1 (en) | 2013-03-14 | 2014-09-25 | Applied Materials, Inc. | Apparatus for coupling a hot wire source to a process chamber |
| CN110098138B (zh) | 2013-09-25 | 2023-07-18 | Ev 集团 E·索尔纳有限责任公司 | 用于结合基板的装置及方法 |
| DE112014006932T5 (de) * | 2014-09-08 | 2017-06-01 | Mitsubishi Electric Corporation | Halbleitertempervorrichtung |
| US10014191B2 (en) | 2014-10-06 | 2018-07-03 | Tel Fsi, Inc. | Systems and methods for treating substrates with cryogenic fluid mixtures |
| JP6690915B2 (ja) | 2014-10-06 | 2020-04-28 | ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ,インコーポレイテッド | 極低温流体混合物で基板を処理するシステムおよび方法 |
| US10625280B2 (en) | 2014-10-06 | 2020-04-21 | Tel Fsi, Inc. | Apparatus for spraying cryogenic fluids |
| US20160138161A1 (en) * | 2014-11-19 | 2016-05-19 | Applied Materials, Inc. | Radical assisted cure of dielectric films |
| CN104865700B (zh) * | 2015-04-29 | 2017-07-14 | 中国科学院长春光学精密机械与物理研究所 | 光学元件表面碳污染的ArH清洗方法 |
| US9673042B2 (en) | 2015-09-01 | 2017-06-06 | Applied Materials, Inc. | Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers |
| CN107026100A (zh) * | 2016-02-01 | 2017-08-08 | 中芯国际集成电路制造(上海)有限公司 | 半导体制造设备以及制造方法 |
| US10116255B2 (en) | 2016-06-22 | 2018-10-30 | Solar Maid Of Northern Arizona Llc | Cleaning system for solar panels |
| US10513778B2 (en) | 2017-09-22 | 2019-12-24 | Applied Materials, Inc. | Native or uncontrolled oxide reduction by HWCVD H* using specific metal chamber liner |
| WO2019199681A1 (en) | 2018-04-09 | 2019-10-17 | Applied Materials, Inc. | Carbon hard masks for patterning applications and methods related thereto |
| US11430661B2 (en) * | 2018-12-28 | 2022-08-30 | Applied Materials, Inc. | Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition |
| CN114220721B (zh) * | 2021-12-14 | 2025-02-11 | 深圳市荣者光电科技发展有限公司 | 一种GaAs光电阴极原子级洁净度的获得方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5409543A (en) * | 1992-12-22 | 1995-04-25 | Sandia Corporation | Dry soldering with hot filament produced atomic hydrogen |
| US5350480A (en) * | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
| JPH09190979A (ja) * | 1996-01-10 | 1997-07-22 | Nec Corp | 選択シリコンエピタキシャル成長方法及び成長装置 |
| US6395099B1 (en) * | 1999-02-08 | 2002-05-28 | Micron Technology | Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces |
| JP4459329B2 (ja) * | 1999-08-05 | 2010-04-28 | キヤノンアネルバ株式会社 | 付着膜の除去方法及び除去装置 |
| US20020104481A1 (en) * | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
| KR20020083767A (ko) * | 2001-04-30 | 2002-11-04 | 주식회사 하이닉스반도체 | 선택적 에피택셜 성장 공정에서의 기판 세정 방법 |
| US6529686B2 (en) * | 2001-06-06 | 2003-03-04 | Fsi International, Inc. | Heating member for combination heating and chilling apparatus, and methods |
| KR101352995B1 (ko) * | 2003-02-14 | 2014-01-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 수소-함유 라디칼을 이용한 자연 산화물 세정 |
| JP4652841B2 (ja) * | 2005-02-21 | 2011-03-16 | キヤノンアネルバ株式会社 | 真空処理装置における水素原子発生源及び水素原子輸送方法 |
| JP2006279008A (ja) * | 2005-03-02 | 2006-10-12 | Ushio Inc | ヒータ及びヒータを備えた加熱装置 |
| US20080078325A1 (en) * | 2006-09-29 | 2008-04-03 | Tokyo Electron Limited | Processing system containing a hot filament hydrogen radical source for integrated substrate processing |
| JP5024765B2 (ja) * | 2007-01-30 | 2012-09-12 | 株式会社フジクラ | 酸化物基板の清浄化方法及び酸化物半導体薄膜の製造方法 |
| US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
| US7942969B2 (en) * | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| KR101456320B1 (ko) * | 2007-11-06 | 2014-11-03 | 칼 짜이스 에스엠티 게엠베하 | 광학면으로부터 오염층을 제거하는 방법, 세정 가스를 생성하는 방법 및 대응하는 세정 및 세정 가스 생성 장치들 |
| JP2009177088A (ja) * | 2008-01-28 | 2009-08-06 | Tokyo Electron Ltd | 基板処理装置 |
| JP4406666B2 (ja) * | 2008-02-20 | 2010-02-03 | シャープ株式会社 | 真空処理装置および真空処理工場 |
| US8291856B2 (en) * | 2008-03-07 | 2012-10-23 | Tokyo Electron Limited | Gas heating device for a vapor deposition system |
| US8454850B2 (en) * | 2009-09-02 | 2013-06-04 | Air Products And Chemicals, Inc. | Method for the removal of surface oxides by electron attachment |
| US9139910B2 (en) * | 2010-06-11 | 2015-09-22 | Tokyo Electron Limited | Method for chemical vapor deposition control |
-
2012
- 2012-12-21 SG SG11201403005TA patent/SG11201403005TA/en unknown
- 2012-12-21 JP JP2014548941A patent/JP6181075B2/ja not_active Expired - Fee Related
- 2012-12-21 WO PCT/US2012/071202 patent/WO2013096748A1/en not_active Ceased
- 2012-12-21 KR KR1020147020558A patent/KR20140107580A/ko not_active Ceased
- 2012-12-21 US US13/723,409 patent/US20130160794A1/en not_active Abandoned
- 2012-12-21 CN CN201280065767.1A patent/CN104025264B/zh not_active Expired - Fee Related
- 2012-12-21 SG SG10201605000PA patent/SG10201605000PA/en unknown
-
2015
- 2015-07-07 US US14/793,346 patent/US20150311061A1/en not_active Abandoned
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