JP2014518591A - 基板に半導体材料を蒸着させる熱線方法及びその方法を実施するための装置 - Google Patents
基板に半導体材料を蒸着させる熱線方法及びその方法を実施するための装置 Download PDFInfo
- Publication number
- JP2014518591A JP2014518591A JP2014505509A JP2014505509A JP2014518591A JP 2014518591 A JP2014518591 A JP 2014518591A JP 2014505509 A JP2014505509 A JP 2014505509A JP 2014505509 A JP2014505509 A JP 2014505509A JP 2014518591 A JP2014518591 A JP 2014518591A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- support
- line
- wires
- different
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
μc−SiC:Hの蒸着のために、以下のプロセス条件を設定した。
以下の表に蒸着シーケンス及び時間を図示する。
Claims (11)
- 少なくとも二本の線の終端を線支持部で挟持して、電流を供給することにより加熱する、蒸着チェンバー内で基板上に半導体材料を蒸着させる熱線方法において、
異なる材料から成る線に、電流を発生させるための電圧を時間的に相前後して加え、それにより、チェンバーを開くこと無く、順番に加熱する線材料の数に対応する数の異なる半導体を順番に基板上に蒸着できることを特徴とする方法。 - 異なる線材料用の電気的に互いに絶縁された電流供給部を備えた線支持部を選定することを特徴とする請求項1に記載の方法。
- 電流を分配して供給することによって、同じ材料から成る複数本の線を同時に加熱することを特徴とする請求項1又は2に記載の方法。
- 少なくとも二本の異なる線の材料として、レニウムとタンタルを選定することを特徴とする請求項1から3までのいずれか一つに記載の方法。
- タンタル線によるμc−Si:Hの蒸着とレニウム線によるμc−SiC:Hの蒸着を交互に行なうことを特徴とする請求項4に記載の方法。
- 請求項1から5までのいずれか一つに記載の熱線方法を実施するための装置であって、
少なくとも二本の異なる線を収容する線支持部が配備され、これらの異なる材料から成る複数本の線が、それぞれ異なる電気回路と接続される装置。 - 当該の線支持部が、互いに平行な方向を向いた線の終端を収容する二つの支持ブロックを備えていることを特徴とする請求項6に記載の装置。
- 当該の支持ブロックがセラミック、特に、MACOR(登録商標)又はAl2O3から構成されていることを特徴とする請求項6又は7に記載の装置。
- 当該の線支持部の各支持ブロックには、電源及び当該の線と電気的に接続された少なくとも二つの導電性のバーが配置されていることを特徴とする請求項6から8までのいずれか一つに記載の装置。
- 当該の導電性のバーが、支持ブロックの同じ材料から成る複数本の線と接続されていることを特徴とする請求項9に記載の装置。
- 当該の線支持部が、当該の線に沿って、ガス供給部を有し、そのガス供給部を通して、本熱線(HWCVD)装置の動作中に前駆化合物を線に供給することを特徴とする請求項9又は10に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011018324A DE102011018324A1 (de) | 2011-04-20 | 2011-04-20 | Heißdrahtverfahren zur Abscheidung von Halbleiter-Material auf einem Substrat und Vorrichtung zur Durchführung des Verfahrens |
DE102011018324.8 | 2011-04-20 | ||
PCT/DE2012/000346 WO2012142992A1 (de) | 2011-04-20 | 2012-03-30 | Heissdrahtverfahren zur abscheidung von halbleiter-material auf einem substrat und vorrichtung zur durchfuhrung des verfahrens |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014518591A true JP2014518591A (ja) | 2014-07-31 |
Family
ID=46177190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014505509A Pending JP2014518591A (ja) | 2011-04-20 | 2012-03-30 | 基板に半導体材料を蒸着させる熱線方法及びその方法を実施するための装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9589794B2 (ja) |
EP (1) | EP2699711B1 (ja) |
JP (1) | JP2014518591A (ja) |
CN (1) | CN103687978B (ja) |
DE (1) | DE102011018324A1 (ja) |
WO (1) | WO2012142992A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014149962A1 (en) * | 2013-03-14 | 2014-09-25 | Applied Materials, Inc. | Apparatus for coupling a hot wire source to a process chamber |
CN108070903A (zh) * | 2016-11-16 | 2018-05-25 | 北京大学 | 一种对衬底加电调控薄膜材料生长的装置 |
CN110079786A (zh) * | 2019-06-03 | 2019-08-02 | 杭州睿清环保科技有限公司 | 用于制备大面积金刚石薄膜的热壁热丝cvd的装置 |
JP7440347B2 (ja) * | 2020-06-01 | 2024-02-28 | 株式会社アルバック | 通電加熱線の製造方法および製造装置 |
CN111501022A (zh) * | 2020-06-20 | 2020-08-07 | 西南石油大学 | 一种多组热丝反应设备 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915552B1 (ja) * | 1970-04-30 | 1974-04-16 | ||
JPH0225575A (ja) * | 1988-07-14 | 1990-01-29 | Canon Inc | 堆積膜形成装置 |
JP2002261020A (ja) * | 2001-02-28 | 2002-09-13 | Kyocera Corp | 多結晶Si膜の形成方法 |
JP2004091821A (ja) * | 2002-08-29 | 2004-03-25 | Kyocera Corp | 薄膜デバイス用製造装置および薄膜デバイスの製造方法 |
JP2009108416A (ja) * | 2008-12-03 | 2009-05-21 | Canon Anelva Corp | 化学蒸着装置 |
JP2009287065A (ja) * | 2008-05-28 | 2009-12-10 | Canon Inc | 触媒cvd装置及び堆積膜形成方法 |
JP2010159450A (ja) * | 2009-01-07 | 2010-07-22 | Ishikawa Seisakusho Ltd | 触媒化学気相成長装置の触媒体支持構造 |
JP2010171263A (ja) * | 2009-01-23 | 2010-08-05 | Mitsubishi Electric Corp | 光起電力装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5146481A (en) * | 1991-06-25 | 1992-09-08 | Diwakar Garg | Diamond membranes for X-ray lithography |
US5479025A (en) * | 1994-11-18 | 1995-12-26 | Hughes Aircraft Company | Boresight thermal reference source |
US20030164225A1 (en) * | 1998-04-20 | 2003-09-04 | Tadashi Sawayama | Processing apparatus, exhaust processing process and plasma processing |
JP2008270572A (ja) * | 2007-04-20 | 2008-11-06 | Sanyo Electric Co Ltd | 光起電力素子の製造方法 |
US20090197014A1 (en) * | 2008-02-04 | 2009-08-06 | Atomic Energy Council - Institute Of Nuclear Energy Research | Apparatus and method for coating diamond on work pieces via hot filament chemical vapor deposition |
US20110033638A1 (en) * | 2009-08-10 | 2011-02-10 | Applied Materials, Inc. | Method and apparatus for deposition on large area substrates having reduced gas usage |
US8117987B2 (en) * | 2009-09-18 | 2012-02-21 | Applied Materials, Inc. | Hot wire chemical vapor deposition (CVD) inline coating tool |
US8900663B2 (en) * | 2009-12-28 | 2014-12-02 | Gvd Corporation | Methods for coating articles |
-
2011
- 2011-04-20 DE DE102011018324A patent/DE102011018324A1/de not_active Withdrawn
-
2012
- 2012-03-30 JP JP2014505509A patent/JP2014518591A/ja active Pending
- 2012-03-30 US US14/004,734 patent/US9589794B2/en not_active Expired - Fee Related
- 2012-03-30 EP EP12724070.3A patent/EP2699711B1/de not_active Not-in-force
- 2012-03-30 WO PCT/DE2012/000346 patent/WO2012142992A1/de active Application Filing
- 2012-03-30 CN CN201280019387.4A patent/CN103687978B/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915552B1 (ja) * | 1970-04-30 | 1974-04-16 | ||
JPH0225575A (ja) * | 1988-07-14 | 1990-01-29 | Canon Inc | 堆積膜形成装置 |
JP2002261020A (ja) * | 2001-02-28 | 2002-09-13 | Kyocera Corp | 多結晶Si膜の形成方法 |
JP2004091821A (ja) * | 2002-08-29 | 2004-03-25 | Kyocera Corp | 薄膜デバイス用製造装置および薄膜デバイスの製造方法 |
JP2009287065A (ja) * | 2008-05-28 | 2009-12-10 | Canon Inc | 触媒cvd装置及び堆積膜形成方法 |
JP2009108416A (ja) * | 2008-12-03 | 2009-05-21 | Canon Anelva Corp | 化学蒸着装置 |
JP2010159450A (ja) * | 2009-01-07 | 2010-07-22 | Ishikawa Seisakusho Ltd | 触媒化学気相成長装置の触媒体支持構造 |
JP2010171263A (ja) * | 2009-01-23 | 2010-08-05 | Mitsubishi Electric Corp | 光起電力装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20140235036A1 (en) | 2014-08-21 |
CN103687978B (zh) | 2016-01-06 |
WO2012142992A1 (de) | 2012-10-26 |
US9589794B2 (en) | 2017-03-07 |
CN103687978A (zh) | 2014-03-26 |
DE102011018324A1 (de) | 2012-10-25 |
EP2699711B1 (de) | 2015-03-04 |
EP2699711A1 (de) | 2014-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20120222616A1 (en) | Shower head assembly and thin film deposition apparatus comprising same | |
KR100440632B1 (ko) | Cvd 장치의 클리닝 방법 | |
JP5974030B2 (ja) | Cvdリアクタ、大面積シリコンフィラメント、及び、ポリシリコンの生産方法 | |
JP2014518591A (ja) | 基板に半導体材料を蒸着させる熱線方法及びその方法を実施するための装置 | |
US9416450B2 (en) | Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber | |
KR100803445B1 (ko) | 박막 균일성을 제어하기 위한 방법 및 그 방법으로 제조된제품 | |
TWI599671B (zh) | 使用熱線化學氣相沉積腔室清潔基材表面之方法 | |
JP2006196677A (ja) | プラズマ処理装置および同装置により製造された半導体素子 | |
CN103988286A (zh) | 自给自足式加热元件 | |
JP2015503841A5 (ja) | ||
JPS63187619A (ja) | プラズマcvd装置 | |
JP4185483B2 (ja) | プラズマ処理装置 | |
KR20130007589A (ko) | 카바이드 필라멘트에 의한 열선 화학적 기상 증착법 | |
CN102245803B (zh) | 催化剂辅助化学气相生长装置 | |
TW201540663A (zh) | 製造由碳構成之奈米結構之裝置及方法 | |
WO2007060876A1 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
JPH0712024B2 (ja) | 堆積膜の形成方法 | |
JPS60241222A (ja) | 堆積膜の形成方法 | |
JP4890313B2 (ja) | プラズマcvd装置 | |
JP2013187314A (ja) | インライン型プラズマcvd装置 | |
US20130068164A1 (en) | Heating unit and film-forming apparatus | |
JP4387330B2 (ja) | 材料供給装置 | |
JP4982577B2 (ja) | プラズマ処理装置および同装置により製造された半導体素子 | |
TW202342806A (zh) | 具有加熱噴頭的噴頭組件 | |
KR20070071506A (ko) | Pecvd 장치의 전극봉 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150205 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150910 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151007 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151218 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160706 |