WO2013096748A1 - Methods and apparatus for cleaning substrate surfaces with atomic hydrogen - Google Patents

Methods and apparatus for cleaning substrate surfaces with atomic hydrogen Download PDF

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Publication number
WO2013096748A1
WO2013096748A1 PCT/US2012/071202 US2012071202W WO2013096748A1 WO 2013096748 A1 WO2013096748 A1 WO 2013096748A1 US 2012071202 W US2012071202 W US 2012071202W WO 2013096748 A1 WO2013096748 A1 WO 2013096748A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
chamber
filaments
hydrogen
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/071202
Other languages
English (en)
French (fr)
Inventor
Joe Griffith Cruz
Jeongwon Park
Pravin K. Narwankar
Nate Si NGUYEN
Hanh Nguyen
To CHAN
Jingjing Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201280065767.1A priority Critical patent/CN104025264B/zh
Priority to KR1020147020558A priority patent/KR20140107580A/ko
Priority to SG11201403005TA priority patent/SG11201403005TA/en
Priority to JP2014548941A priority patent/JP6181075B2/ja
Publication of WO2013096748A1 publication Critical patent/WO2013096748A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Definitions

  • an appropriately configured chamber to produce atomic hydrogen e.g., a chamber having a hot wire source, such as a hot wire processing chamber, a hot wire chemical vapor deposition (HWCVD) chamber or similar chamber as described below
  • a higher density population of atomic hydrogen e.g., such as 1 .3 to about 3 times higher
  • atomic hydrogen e.g., such as 1 .3 to about 3 times higher
  • the process chamber 301 generally comprises a chamber body 302 having an internal volume 304 with an atomic hydrogen source 348 disposed therein.
  • the atomic hydrogen source 348 is configured to provide atomic hydrogen to the surface of a substrate 330 ⁇ e.g., the device described above) during operation.
  • the atomic hydrogen source includes a plurality of filaments 310 coupled to a power source 313 for providing current to heat the plurality of filaments to a temperature sufficient to produce atomic hydrogen from a hydrogen gas, provided for example, from a hydrogen gas source 346.
  • the gas distribution apparatus 341 may prevent a broken or failed wire 310 from contacting the substrate 330.
  • a distance from the gas distribution apparatus 341 , or plate 342, to the substrate 330 may be any distance suitable to provide a desired density of atomic hydrogen to the substrate 330.
  • the gas distribution apparatus 341 to substrate distance 331 may be about 10 to about 200 mm.
  • one or more shields 320 may be provided to minimize unwanted deposition of materials on interior surfaces of the chamber body 302.
  • the shields 320 and chamber liners 322 generally protect the interior surfaces of the chamber body 302 from undesirably collecting deposited materials due to the cleaning process and/or process gases flowing in the chamber.
  • the shields 320 and chamber liners 322 may be removable, replaceable, and/or cleanable.
  • the shields 320 and chamber liners 322 may be configured to cover every area of the chamber body 302 that could become coated, including but not limited to, around the wires 310 and on all walls of the coating compartment.
  • a controller 306 may be coupled to various components of the process chamber 300, and optionally to the chamber 301 and/or the preheat chamber 350, to control the operation thereof. Although schematically shown coupled to the process chamber 300, the controller may be operably connected to any component that may be controlled by the controller, such as the power supply 313, the gas supply 346 coupled to the inlet 332, a vacuum pump and or throttle valve (not shown) coupled to the outlet 334, the substrate support 328, and the like, in order to control the cleaning process in accordance with the methods disclosed herein.
  • the controller 306 generally comprises a central processing unit (CPU) 308, a memory 312, and support circuits 310 for the CPU 308.
  • CPU central processing unit

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/US2012/071202 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen Ceased WO2013096748A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201280065767.1A CN104025264B (zh) 2011-12-23 2012-12-21 用原子氢清洁基板表面的方法和设备
KR1020147020558A KR20140107580A (ko) 2011-12-23 2012-12-21 원자 수소로 기판 표면들을 세정하기 위한 방법들 및 장치
SG11201403005TA SG11201403005TA (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
JP2014548941A JP6181075B2 (ja) 2011-12-23 2012-12-21 原子水素を用いて基板表面を洗浄するための方法及び装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161579830P 2011-12-23 2011-12-23
US61/579,830 2011-12-23
US13/723,409 US20130160794A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
US13/723,409 2012-12-21

Publications (1)

Publication Number Publication Date
WO2013096748A1 true WO2013096748A1 (en) 2013-06-27

Family

ID=48653348

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/071202 Ceased WO2013096748A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Country Status (6)

Country Link
US (2) US20130160794A1 (enExample)
JP (1) JP6181075B2 (enExample)
KR (1) KR20140107580A (enExample)
CN (1) CN104025264B (enExample)
SG (2) SG11201403005TA (enExample)
WO (1) WO2013096748A1 (enExample)

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US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
WO2014149962A1 (en) 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus for coupling a hot wire source to a process chamber
CN110098138B (zh) 2013-09-25 2023-07-18 Ev 集团 E·索尔纳有限责任公司 用于结合基板的装置及方法
DE112014006932T5 (de) * 2014-09-08 2017-06-01 Mitsubishi Electric Corporation Halbleitertempervorrichtung
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
JP6690915B2 (ja) 2014-10-06 2020-04-28 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 極低温流体混合物で基板を処理するシステムおよび方法
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
US20160138161A1 (en) * 2014-11-19 2016-05-19 Applied Materials, Inc. Radical assisted cure of dielectric films
CN104865700B (zh) * 2015-04-29 2017-07-14 中国科学院长春光学精密机械与物理研究所 光学元件表面碳污染的ArH清洗方法
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
CN107026100A (zh) * 2016-02-01 2017-08-08 中芯国际集成电路制造(上海)有限公司 半导体制造设备以及制造方法
US10116255B2 (en) 2016-06-22 2018-10-30 Solar Maid Of Northern Arizona Llc Cleaning system for solar panels
US10513778B2 (en) 2017-09-22 2019-12-24 Applied Materials, Inc. Native or uncontrolled oxide reduction by HWCVD H* using specific metal chamber liner
WO2019199681A1 (en) 2018-04-09 2019-10-17 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto
US11430661B2 (en) * 2018-12-28 2022-08-30 Applied Materials, Inc. Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition
CN114220721B (zh) * 2021-12-14 2025-02-11 深圳市荣者光电科技发展有限公司 一种GaAs光电阴极原子级洁净度的获得方法

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US20020157688A1 (en) * 2001-04-30 2002-10-31 Joo Sung Jae Method for cleaning a substrate in selective epitaxial growth process
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Also Published As

Publication number Publication date
KR20140107580A (ko) 2014-09-04
JP6181075B2 (ja) 2017-08-16
SG11201403005TA (en) 2014-09-26
US20130160794A1 (en) 2013-06-27
CN104025264A (zh) 2014-09-03
JP2015503841A (ja) 2015-02-02
US20150311061A1 (en) 2015-10-29
SG10201605000PA (en) 2016-08-30
CN104025264B (zh) 2017-09-12

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