CN104025264B - 用原子氢清洁基板表面的方法和设备 - Google Patents

用原子氢清洁基板表面的方法和设备 Download PDF

Info

Publication number
CN104025264B
CN104025264B CN201280065767.1A CN201280065767A CN104025264B CN 104025264 B CN104025264 B CN 104025264B CN 201280065767 A CN201280065767 A CN 201280065767A CN 104025264 B CN104025264 B CN 104025264B
Authority
CN
China
Prior art keywords
substrate
chamber
hydrogen
cleaning
heated filament
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280065767.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN104025264A (zh
Inventor
乔·格里菲思·克鲁兹
朴廷元
普拉文·K·纳万克尔
内特斯·阮
哈恩·阮
陈图
徐晶晶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN104025264A publication Critical patent/CN104025264A/zh
Application granted granted Critical
Publication of CN104025264B publication Critical patent/CN104025264B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN201280065767.1A 2011-12-23 2012-12-21 用原子氢清洁基板表面的方法和设备 Expired - Fee Related CN104025264B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161579830P 2011-12-23 2011-12-23
US61/579,830 2011-12-23
US13/723,409 US20130160794A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen
US13/723,409 2012-12-21
PCT/US2012/071202 WO2013096748A1 (en) 2011-12-23 2012-12-21 Methods and apparatus for cleaning substrate surfaces with atomic hydrogen

Publications (2)

Publication Number Publication Date
CN104025264A CN104025264A (zh) 2014-09-03
CN104025264B true CN104025264B (zh) 2017-09-12

Family

ID=48653348

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280065767.1A Expired - Fee Related CN104025264B (zh) 2011-12-23 2012-12-21 用原子氢清洁基板表面的方法和设备

Country Status (6)

Country Link
US (2) US20130160794A1 (enExample)
JP (1) JP6181075B2 (enExample)
KR (1) KR20140107580A (enExample)
CN (1) CN104025264B (enExample)
SG (2) SG11201403005TA (enExample)
WO (1) WO2013096748A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
WO2014149962A1 (en) 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus for coupling a hot wire source to a process chamber
CN110098138B (zh) 2013-09-25 2023-07-18 Ev 集团 E·索尔纳有限责任公司 用于结合基板的装置及方法
DE112014006932T5 (de) * 2014-09-08 2017-06-01 Mitsubishi Electric Corporation Halbleitertempervorrichtung
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
JP6690915B2 (ja) 2014-10-06 2020-04-28 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 極低温流体混合物で基板を処理するシステムおよび方法
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
US20160138161A1 (en) * 2014-11-19 2016-05-19 Applied Materials, Inc. Radical assisted cure of dielectric films
CN104865700B (zh) * 2015-04-29 2017-07-14 中国科学院长春光学精密机械与物理研究所 光学元件表面碳污染的ArH清洗方法
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
CN107026100A (zh) * 2016-02-01 2017-08-08 中芯国际集成电路制造(上海)有限公司 半导体制造设备以及制造方法
US10116255B2 (en) 2016-06-22 2018-10-30 Solar Maid Of Northern Arizona Llc Cleaning system for solar panels
US10513778B2 (en) 2017-09-22 2019-12-24 Applied Materials, Inc. Native or uncontrolled oxide reduction by HWCVD H* using specific metal chamber liner
WO2019199681A1 (en) 2018-04-09 2019-10-17 Applied Materials, Inc. Carbon hard masks for patterning applications and methods related thereto
US11430661B2 (en) * 2018-12-28 2022-08-30 Applied Materials, Inc. Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition
CN114220721B (zh) * 2021-12-14 2025-02-11 深圳市荣者光电科技发展有限公司 一种GaAs光电阴极原子级洁净度的获得方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US6107197A (en) * 1996-01-10 2000-08-22 Nec Corporation Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth
US6375756B1 (en) * 1999-08-05 2002-04-23 Anelva Corporation Method for removing a deposited film
CN1762039A (zh) * 2003-02-14 2006-04-19 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
TW200922703A (en) * 2007-11-06 2009-06-01 Zeiss Carl Smt Ag Method for removing a contamination layer from an optical surface, method for generating a cleaning gas, and corresponding cleaning and cleaning gas generation arrangements

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5409543A (en) * 1992-12-22 1995-04-25 Sandia Corporation Dry soldering with hot filament produced atomic hydrogen
US6395099B1 (en) * 1999-02-08 2002-05-28 Micron Technology Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
US20020104481A1 (en) * 2000-12-06 2002-08-08 Chiang Tony P. System and method for modulated ion-induced atomic layer deposition (MII-ALD)
KR20020083767A (ko) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정에서의 기판 세정 방법
US6529686B2 (en) * 2001-06-06 2003-03-04 Fsi International, Inc. Heating member for combination heating and chilling apparatus, and methods
JP4652841B2 (ja) * 2005-02-21 2011-03-16 キヤノンアネルバ株式会社 真空処理装置における水素原子発生源及び水素原子輸送方法
JP2006279008A (ja) * 2005-03-02 2006-10-12 Ushio Inc ヒータ及びヒータを備えた加熱装置
US20080078325A1 (en) * 2006-09-29 2008-04-03 Tokyo Electron Limited Processing system containing a hot filament hydrogen radical source for integrated substrate processing
JP5024765B2 (ja) * 2007-01-30 2012-09-12 株式会社フジクラ 酸化物基板の清浄化方法及び酸化物半導体薄膜の製造方法
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP2009177088A (ja) * 2008-01-28 2009-08-06 Tokyo Electron Ltd 基板処理装置
JP4406666B2 (ja) * 2008-02-20 2010-02-03 シャープ株式会社 真空処理装置および真空処理工場
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
US8454850B2 (en) * 2009-09-02 2013-06-04 Air Products And Chemicals, Inc. Method for the removal of surface oxides by electron attachment
US9139910B2 (en) * 2010-06-11 2015-09-22 Tokyo Electron Limited Method for chemical vapor deposition control

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US6107197A (en) * 1996-01-10 2000-08-22 Nec Corporation Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth
US6375756B1 (en) * 1999-08-05 2002-04-23 Anelva Corporation Method for removing a deposited film
CN1762039A (zh) * 2003-02-14 2006-04-19 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
TW200922703A (en) * 2007-11-06 2009-06-01 Zeiss Carl Smt Ag Method for removing a contamination layer from an optical surface, method for generating a cleaning gas, and corresponding cleaning and cleaning gas generation arrangements

Also Published As

Publication number Publication date
KR20140107580A (ko) 2014-09-04
WO2013096748A1 (en) 2013-06-27
JP6181075B2 (ja) 2017-08-16
SG11201403005TA (en) 2014-09-26
US20130160794A1 (en) 2013-06-27
CN104025264A (zh) 2014-09-03
JP2015503841A (ja) 2015-02-02
US20150311061A1 (en) 2015-10-29
SG10201605000PA (en) 2016-08-30

Similar Documents

Publication Publication Date Title
CN104025264B (zh) 用原子氢清洁基板表面的方法和设备
US20240301584A1 (en) Method and apparatus for precleaning a substrate surface prior to epitaxial growth
CN103597581B (zh) 使用热丝化学气相沉积(hwcvd)腔室清洁基板表面的方法
TWI508181B (zh) 高遷移率單塊ｐ-ｉ-ｎ二極體
KR102419980B1 (ko) 금속 실리사이드 배선 나노와이어 구조를 형성하기 위한 방법들
US10438796B2 (en) Method for removing native oxide and residue from a III-V group containing surface
CN110622283B (zh) 减少或消除钨膜中缺陷的方法
TWI608524B (zh) 使用熱線源來處理置於基材上之含鍺材料、含ｉｉｉ－ｖ族化合物材料、或含ｉｉ－ｖｉ族化合物材料的方法及設備
TW202027198A (zh) 用於形成過渡金屬材料的群集處理系統
WO2015038270A1 (en) Surface treatment to improve cctba based cvd co nucleation on dielectric substrate
US11031241B2 (en) Method of growing doped group IV materials
WO2014100047A1 (en) Methods and apparatus for cleaning substrate structures with atomic hydrogen
TW201443978A (zh) 用氫原子自基板移除光阻之方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170912

Termination date: 20191221