JP6177117B2 - 固体撮像装置、撮像装置、固体撮像装置の製造方法 - Google Patents

固体撮像装置、撮像装置、固体撮像装置の製造方法 Download PDF

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JP6177117B2
JP6177117B2 JP2013255423A JP2013255423A JP6177117B2 JP 6177117 B2 JP6177117 B2 JP 6177117B2 JP 2013255423 A JP2013255423 A JP 2013255423A JP 2013255423 A JP2013255423 A JP 2013255423A JP 6177117 B2 JP6177117 B2 JP 6177117B2
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substrate
wiring
imaging device
solid
semiconductor layer
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JP2015115420A5 (https=
JP2015115420A (ja
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祐一 五味
祐一 五味
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Olympus Corp
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Olympus Corp
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Priority to PCT/JP2014/082696 priority patent/WO2015087918A1/ja
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Priority to US15/149,955 priority patent/US20160254299A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013255423A 2013-12-10 2013-12-10 固体撮像装置、撮像装置、固体撮像装置の製造方法 Expired - Fee Related JP6177117B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013255423A JP6177117B2 (ja) 2013-12-10 2013-12-10 固体撮像装置、撮像装置、固体撮像装置の製造方法
PCT/JP2014/082696 WO2015087918A1 (ja) 2013-12-10 2014-12-10 固体撮像装置、撮像装置、固体撮像装置の製造方法
US15/149,955 US20160254299A1 (en) 2013-12-10 2016-05-09 Solid-state imaging device, imaging device, solid-state imaging device manufacturing method

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Application Number Priority Date Filing Date Title
JP2013255423A JP6177117B2 (ja) 2013-12-10 2013-12-10 固体撮像装置、撮像装置、固体撮像装置の製造方法

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JP2015115420A JP2015115420A (ja) 2015-06-22
JP2015115420A5 JP2015115420A5 (https=) 2017-01-12
JP6177117B2 true JP6177117B2 (ja) 2017-08-09

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US (1) US20160254299A1 (https=)
JP (1) JP6177117B2 (https=)
WO (1) WO2015087918A1 (https=)

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CN108886043B (zh) 2016-04-25 2023-06-30 奥林巴斯株式会社 摄像元件、内窥镜以及内窥镜系统
JP2018081946A (ja) * 2016-11-14 2018-05-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
WO2018154644A1 (ja) * 2017-02-22 2018-08-30 オリンパス株式会社 固体撮像装置、蛍光観察内視鏡装置、および固体撮像装置の製造方法
JP6779825B2 (ja) 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
WO2018180576A1 (ja) * 2017-03-31 2018-10-04 ソニーセミコンダクタソリューションズ株式会社 半導体装置、固体撮像装置、および電子機器
CN110476228B (zh) * 2017-04-04 2024-01-16 索尼半导体解决方案公司 半导体装置、制造半导体装置的方法和电子设备
WO2018186196A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
CN110494962B (zh) * 2017-04-04 2024-01-12 索尼半导体解决方案公司 半导体器件、制造半导体器件的方法和电子设备
WO2018186191A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
US11276676B2 (en) * 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
WO2020010265A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Microelectronic assemblies
CN112771671B (zh) * 2018-10-16 2024-12-17 索尼半导体解决方案公司 半导体元件及其制造方法
CN113330557A (zh) 2019-01-14 2021-08-31 伊文萨思粘合技术公司 键合结构
JP2022040579A (ja) * 2020-08-31 2022-03-11 ソニーセミコンダクタソリューションズ株式会社 半導体装置、および、半導体装置の製造方法
CN119497906A (zh) * 2022-07-06 2025-02-21 三井化学株式会社 基板层叠体的制造方法和基板层叠体

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JPH05267394A (ja) * 1992-03-19 1993-10-15 Sumitomo Electric Ind Ltd 半導体素子の実装方法
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US7214999B2 (en) * 2003-10-31 2007-05-08 Motorola, Inc. Integrated photoserver for CMOS imagers
JP2007228460A (ja) * 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
US8471939B2 (en) * 2008-08-01 2013-06-25 Omnivision Technologies, Inc. Image sensor having multiple sensing layers
JP2011249562A (ja) * 2010-05-27 2011-12-08 Panasonic Corp 半導体装置及びその製造方法
JP2012033894A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置
JP5561190B2 (ja) * 2011-01-31 2014-07-30 富士通株式会社 半導体装置、半導体装置の製造方法及び電子装置
US20130075607A1 (en) * 2011-09-22 2013-03-28 Manoj Bikumandla Image sensors having stacked photodetector arrays
TWI577001B (zh) * 2011-10-04 2017-04-01 新力股份有限公司 固體攝像裝置、固體攝像裝置之製造方法及電子機器
JP2013187475A (ja) * 2012-03-09 2013-09-19 Olympus Corp 固体撮像装置およびカメラシステム

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WO2015087918A1 (ja) 2015-06-18
US20160254299A1 (en) 2016-09-01

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