JP6159563B2 - 少なくとも１つのパワー半導体コンポーネント用の基板を製造するための方法 - Google Patents

少なくとも１つのパワー半導体コンポーネント用の基板を製造するための方法 Download PDF

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JP6159563B2
JP6159563B2 JP2013088232A JP2013088232A JP6159563B2 JP 6159563 B2 JP6159563 B2 JP 6159563B2 JP 2013088232 A JP2013088232 A JP 2013088232A JP 2013088232 A JP2013088232 A JP 2013088232A JP 6159563 B2 JP6159563 B2 JP 6159563B2
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conductor track
metal layer
layer
power semiconductor
metallization layer
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JP2013229603A (ja
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ベーゼンデルファー クルト・ゲオルク
ベーゼンデルファー クルト・ゲオルク
ブラムル ハイコ
ブラムル ハイコ
エルトナー ナトヤ
エルトナー ナトヤ
ゲープル クリスティアン
ゲープル クリスティアン
コボラ ハラルト
コボラ ハラルト
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Semikron Elektronik GmbH and Co KG
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Semikron Elektronik GmbH and Co KG
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    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

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US9397017B2 (en) * 2014-11-06 2016-07-19 Semiconductor Components Industries, Llc Substrate structures and methods of manufacture
US11437304B2 (en) 2014-11-06 2022-09-06 Semiconductor Components Industries, Llc Substrate structures and methods of manufacture
US9408301B2 (en) 2014-11-06 2016-08-02 Semiconductor Components Industries, Llc Substrate structures and methods of manufacture
WO2023234590A1 (ko) * 2022-05-31 2023-12-07 주식회사 아모그린텍 세라믹 기판 및 그 제조방법
KR20230173334A (ko) * 2022-06-17 2023-12-27 주식회사 아모그린텍 세라믹 기판 및 그 제조방법
DE102022206295B3 (de) 2022-06-23 2023-11-09 Zf Friedrichshafen Ag Verfahren zum bilden eines halbleitermoduls und halbleitermodul
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JP4765110B2 (ja) * 2005-03-31 2011-09-07 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
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